| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/04/2002 | EP1237196A1 Semiconductor device |
| 09/04/2002 | EP1237195A2 Semiconductor device and manufacturing method thereof |
| 09/04/2002 | EP1237193A2 Semiconductor memory device |
| 09/04/2002 | EP1237192A2 Twin monos memory cell and corresponding fabrication method |
| 09/04/2002 | EP1237191A2 High-Density Electronic Circuit Modules |
| 09/04/2002 | EP1237186A2 By-pass rectifier element and terminal housing for solar battery modules using said element |
| 09/04/2002 | EP1237183A1 Method for stabilizing oxide-semiconductor interface by using group 5 element and stabilized semiconductor |
| 09/04/2002 | EP1236225A1 Method for establishing ultra-thin gate insulator using anneal in ammonia |
| 09/04/2002 | EP1236224A1 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide |
| 09/04/2002 | EP1012879B1 Fabrication method for reduced-dimension integrated circuits |
| 09/04/2002 | EP0992069B1 Semiconductor current limiter |
| 09/04/2002 | EP0795201B1 Method of formation of a capacitor for an integrated circuit and a method of adding on-chip capacitors to an integrated circuit |
| 09/04/2002 | CN1367937A Misfet |
| 09/04/2002 | CN1367636A Mask, its making method, method for making organic electroluminescent device and organic electroluminescent device thereof |
| 09/04/2002 | CN1367537A 半导体器件以及显示装置 A semiconductor device and a display device |
| 09/04/2002 | CN1367535A Complete depletion type collector silicon insulator bipolar transistor |
| 09/04/2002 | CN1367532A Press-contacting type semiconductor device |
| 09/04/2002 | CN1367528A Improvement method for changing working parameters to making power rectifier device and obtained device |
| 09/04/2002 | CN1367490A Utilization of block voltage to help double MONOS unit to implement writing-in and erasing program |
| 09/04/2002 | CN1367478A Plate display high voltage device structure for driving chip and its preparing method |
| 09/04/2002 | CN1367476A Active matrix display equipment |
| 09/04/2002 | CN1090383C Semiconductor device and method for fabricating same |
| 09/04/2002 | CN1090382C Group III-V compound semiconductor wafer |
| 09/04/2002 | CN1090335C Quantum trap infra-red infra-focus planar chip without discrete image element optical read-out |
| 09/04/2002 | CN1090334C Foldable portable spectacles |
| 09/03/2002 | US6445622 Voltage level shifter circuit and nonvolatile semiconductor storage device using the circuit |
| 09/03/2002 | US6445617 Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memory |
| 09/03/2002 | US6445428 Thin film transistor for a liquid crystal display device and a fabrication process thereof |
| 09/03/2002 | US6445059 Semiconductor device |
| 09/03/2002 | US6445058 Bipolar junction transistor incorporating integral field plate |
| 09/03/2002 | US6445057 Semiconductor device having a trimming circuit for suppressing leakage current |
| 09/03/2002 | US6445054 Semiconductor device |
| 09/03/2002 | US6445053 Micro-machined absolute pressure sensor |
| 09/03/2002 | US6445052 Power lateral diffused MOS transistor |
| 09/03/2002 | US6445050 Symmetric device with contacts self aligned to gate |
| 09/03/2002 | US6445048 Semiconductor configuration having trenches for isolating doped regions |
| 09/03/2002 | US6445047 Semiconductor device and method for fabricating the same |
| 09/03/2002 | US6445046 Memory cell arrangement and process for manufacturing the same |
| 09/03/2002 | US6445042 Method and apparatus for making MOSFETs with elevated source/drain extensions |
| 09/03/2002 | US6445040 Lateral bipolar type input/output protection device |
| 09/03/2002 | US6445038 Silicon on insulator high-voltage switch |
| 09/03/2002 | US6445037 Trench DMOS transistor having lightly doped source structure |
| 09/03/2002 | US6445036 Semiconductor device having trench-structured rectangular unit cells |
| 09/03/2002 | US6445035 Power MOS device with buried gate and groove |
| 09/03/2002 | US6445034 MOS transistor having first and second channel segments with different widths and lengths |
| 09/03/2002 | US6445033 Gate-insulating film including oxide film |
| 09/03/2002 | US6445032 Floating back gate electrically erasable programmable read-only memory(EEPROM) |
| 09/03/2002 | US6445030 Flash memory erase speed by fluorine implant or fluorination |
| 09/03/2002 | US6445029 NVRAM array device with enhanced write and erase |
| 09/03/2002 | US6445019 Lateral semiconductor device for withstanding high reverse biasing voltages |
| 09/03/2002 | US6445016 Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation |
| 09/03/2002 | US6445015 Metal sulfide semiconductor transistor devices |
| 09/03/2002 | US6445013 Gate commutated turn-off semiconductor device |
| 09/03/2002 | US6445012 Semiconductor device and manufacturing method thereof |
| 09/03/2002 | US6445004 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
| 09/03/2002 | US6445003 Thin film transistor (TFT) type optical detecting sensor |
| 09/03/2002 | US6445000 Photodetecting device |
| 09/03/2002 | US6444999 Quantum circuit |
| 09/03/2002 | US6444896 Quantum dot thermoelectric materials and devices |
| 09/03/2002 | US6444555 Establishing oxide base film having specified thickness on semiconductor substrate, annealing film in ammonia environment to form nitrided oxide film as ultra-thin insulator, forming polysilicon-based field effect transistor on film |
| 09/03/2002 | US6444554 Variation in threshold level of selective transistors is reduced when a shallow structure buried with an insulating film for element isolation is used |
| 09/03/2002 | US6444550 Laser tailoring retrograde channel profile in surfaces |
| 09/03/2002 | US6444548 Bitline diffusion with halo for improved array threshold voltage control |
| 09/03/2002 | US6444546 Single electron device using ultra-thin metal film and method for fabricating the same |
| 09/03/2002 | US6444545 Including plurality of nanoclusters in trapping layer of traditional silicon-oxide-nitride-oxide-silicon structure improves charge retention, reliability characteristics and write/erase times |
| 09/03/2002 | US6444543 Forming semiconductor chips surrounded by peripheral grooves for separating into individual pieces on substrate surface, pasting protecting sheet on surface so sheet is bent along and adheres to bottom walls of grooves, dicing along grooves |
| 09/03/2002 | US6444535 Method to reduce emitter to base capacitance and related structure |
| 09/03/2002 | US6444534 SOI semiconductor device opening implantation gettering method |
| 09/03/2002 | US6444533 Semiconductor devices and methods for same |
| 09/03/2002 | US6444532 Process for fabricating MOS semiconductor transistor |
| 09/03/2002 | US6444529 Methods of forming integrated circuitry and methods of forming elevated source/drain regions of a field effect transistor |
| 09/03/2002 | US6444528 Selective oxide deposition in the bottom of a trench |
| 09/03/2002 | US6444527 Method of operation of punch-through field effect transistor |
| 09/03/2002 | US6444525 Vertical, has two trenches to minimize size |
| 09/03/2002 | US6444522 Forming photoresist pattern exposing portion of semiconductor substrate in which well region will be formed, doping to form well, removing pattern, forming second pattern, doping to form antidiffusion region and second well, thermally activating |
| 09/03/2002 | US6444521 Replacing silicon nitride of nitride read only memory floating gate with silicon oxynitride improves endurance and reliability of device and extends data retention times |
| 09/03/2002 | US6444516 Semiconductor having gate structure employing gate conductor that has relatively low resistivity yet remains thermally stable at processing temperatures, thus exhibiting low gate propagation delay |
| 09/03/2002 | US6444514 Semiconductor integrated circuit device and manufacturing method thereof |
| 09/03/2002 | US6444513 Forming first metal layer on gate oxide on substrate, increasing etch selectivity in surface region of metal layer, forming second metal layer, etching to form metal gate, with etching stopping on surface region of first metal layer |
| 09/03/2002 | US6444512 Dual metal gate transistors for CMOS process |
| 09/03/2002 | US6444509 High performance poly-si1−xgex thin film transistor and a method of fabricating such a thin film transistor |
| 09/03/2002 | US6444507 Fabrication process for thin film transistors in a display or electronic device |
| 09/03/2002 | US6444506 It with a laser beam in a hydrogen-inclusive atmosphere. further, the above laser annealing step and a step of forming an insulating film to become a gate insulating film are performed consecutively. as a result, hydrogen is effectively |
| 09/03/2002 | US6444505 Thin film transistor (TFT) structure with planarized gate electrode |
| 09/03/2002 | US6444504 Protects against electrostatic discharges, over-current, and voltage surges overcoming the aforementioned drawbacks is provided. |
| 09/03/2002 | US6444487 Flexible substrate supporting the strain sensing element. the strain sensing element is made of single crystal or polycrystalline semiconducting material. |
| 09/03/2002 | US6444390 Under the conditions in that a germanium film is formed on an amorphous silicon film, a first heat treatment (crystallization step) no defect in its crystal grain. |
| 09/03/2002 | US6444296 Electrical resistance, electrodes |
| 09/03/2002 | US6444277 Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates |
| 09/03/2002 | US6443720 Apparatus for filling a gap between spaced layers of a semiconductor |
| 09/03/2002 | CA2067578C Epitaxially grown compound-semiconductor crystal |
| 08/29/2002 | WO2002067426A1 Semiconductor devices |
| 08/29/2002 | WO2002067336A1 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment |
| 08/29/2002 | WO2002067335A1 Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure |
| 08/29/2002 | WO2002067334A1 Multiple quantum well broad spectrum gain medium and method for forming same |
| 08/29/2002 | WO2002067333A1 Semiconductor device and method of manufacturing the same |
| 08/29/2002 | WO2002067332A2 Semiconductor devices having field shaping regions |
| 08/29/2002 | WO2002067331A1 Thyristor switch for microwave signals |
| 08/29/2002 | WO2002067329A1 Flexible display device |
| 08/29/2002 | WO2002067328A2 Organic light emitting diode display having shield electrodes |