| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/10/2002 | US6448588 Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode |
| 09/10/2002 | US6448587 Circuit incorporated IGBT and power conversion device using the same |
| 09/10/2002 | US6448586 Semiconductor current-switching device having operational enhancer and method therefor |
| 09/10/2002 | US6448580 Self-light-emitting apparatus and semiconductor device used in the apparatus |
| 09/10/2002 | US6448579 Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
| 09/10/2002 | US6448578 Multilayer; layers of titanium, aluminum, titanium nitride and silicon nitride |
| 09/10/2002 | US6448577 Semiconductor device with grain boundaries |
| 09/10/2002 | US6448192 Method for forming a high dielectric constant material |
| 09/10/2002 | US6448189 Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer |
| 09/10/2002 | US6448178 Heating in an oxidizing atmosphere prevents dopants such as the phosphorous atoms from escaping from the thin film and increasing the resistance of the film |
| 09/10/2002 | US6448166 Forming one of a silicon oxide and a sillicon oxynitride film on semiconductor substrate, covering it with amorphous tantalum oxynitride layer, performing low temperature annealing, crystallizing the amorphous tantalum oxynitride |
| 09/10/2002 | US6448162 Method for producing schottky diodes |
| 09/10/2002 | US6448161 Silicon based vertical tunneling memory cell |
| 09/10/2002 | US6448160 Method of fabricating power rectifier device to vary operating parameters and resulting device |
| 09/10/2002 | US6448157 Fabrication process for a semiconductor device |
| 09/10/2002 | US6448153 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
| 09/10/2002 | US6448143 Method for using thin spacers and oxidation in gate oxides |
| 09/10/2002 | US6448141 Graded LDD implant process for sub-half-micron MOS devices |
| 09/10/2002 | US6448140 Laterally recessed tungsten silicide gate structure used with a self-aligned contact structure including a straight walled sidewall spacer while filling recess |
| 09/10/2002 | US6448139 Manufacturing method of semiconductor device |
| 09/10/2002 | US6448138 Nonvolatile floating-gate memory devices, and process of fabrication |
| 09/10/2002 | US6448127 Deep submicron complementary metal oxide semiconductor (cmos) integrated circuit; removing initial oxide layer on silicon wafer by hydrogen baking; forming new oxide or oxynitride layer; removing a portion oxide layer by hydrogen annealing |
| 09/10/2002 | US6448125 Electronic power device integrated on a semiconductor material and related manufacturing process |
| 09/10/2002 | US6448120 Totally self-aligned transistor with tungsten gate |
| 09/10/2002 | US6448119 Field effect transistor and method of fabricating the same |
| 09/10/2002 | US6448118 Semiconductor film manufacturing with selective introduction of crystallization promoting material |
| 09/10/2002 | US6448117 Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix |
| 09/10/2002 | US6448115 Semiconductor device having quasi-SOI structure and manufacturing method thereof |
| 09/10/2002 | US6447613 Substrate dechucking device and substrate dechucking method |
| 09/10/2002 | US6447604 Depositing nitride homoepitaxial layer by vapor phase epitaxy (vpe) |
| 09/10/2002 | US6446641 Method of manufacturing semiconductor device, and semiconductor device manufactured thereby |
| 09/06/2002 | WO2002069681A1 A method of soldering |
| 09/06/2002 | WO2002069410A2 Gallium nitride material devices including backside vias and methods of fabrication |
| 09/06/2002 | WO2002069408A2 Soi ldmos transistor having a field plate and method of making the same |
| 09/06/2002 | WO2002069406A2 Am/pm non-linearity compensation in fets |
| 09/06/2002 | WO2002069394A1 Process for depositing and planarizing bpsg for dense trench mosfet application |
| 09/06/2002 | WO2002069373A2 Gallium nitride material based semiconductor devices including thermally conductive regions |
| 09/06/2002 | WO2002069284A1 Time-detection device and time- detection method by using a semi-conductor element |
| 09/06/2002 | WO2002049081A3 Rf power bipolar junction transistor having performance-enhancing emitter structure |
| 09/06/2002 | WO2001047045A9 Solution processing |
| 09/05/2002 | US20020123241 Process for forming pattern and method for producing liquid crystal display apparatus employing process for forming pattern |
| 09/05/2002 | US20020123216 Method of manufacturing semiconductor device |
| 09/05/2002 | US20020123212 Semiconductor device manufacturing method |
| 09/05/2002 | US20020123205 Semiconductor device and method of manufacturing the same |
| 09/05/2002 | US20020123202 Semiconductor device and method for manufacturing the same |
| 09/05/2002 | US20020123201 Method of manufacturing CMOS thin film transistor |
| 09/05/2002 | US20020123199 Method of manufacturing a bipolar transistor semiconductor device |
| 09/05/2002 | US20020123197 Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel mosfets |
| 09/05/2002 | US20020123196 Method of making trench-gated MOSFET having cesium gate oxide layer |
| 09/05/2002 | US20020123195 MOS technology power device with low output resistance and low capacity, and related manufacturing process |
| 09/05/2002 | US20020123189 Method of manufacturing a transistor in a semiconductor device |
| 09/05/2002 | US20020123188 Compensation component and method for fabricating the compensation component |
| 09/05/2002 | US20020123185 Semiconductor device having a voltage-regulator device |
| 09/05/2002 | US20020123183 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| 09/05/2002 | US20020123182 Transistor with ulta-short gate feature and method of fabricating the same |
| 09/05/2002 | US20020123180 Transistor and memory cell with ultra-short gate feature and method of fabricating the same |
| 09/05/2002 | US20020123179 MIS semiconductor device and method of fabricating the same |
| 09/05/2002 | US20020123176 Method for fabricating electric interconnections and interconnection substrate having electric interconnections fabricated by the same method |
| 09/05/2002 | US20020123175 Reflective liquid crystal display panel and device using same |
| 09/05/2002 | US20020123174 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors |
| 09/05/2002 | US20020123167 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| 09/05/2002 | US20020123163 Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
| 09/05/2002 | US20020123161 Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device |
| 09/05/2002 | US20020123160 Integrated semiconductor device including high-voltage interconnections passing through low-voltage regions |
| 09/05/2002 | US20020122280 SCR devices with deep-N-well structure for on-chip ESD protection circuits |
| 09/05/2002 | US20020121678 Bipolar diode |
| 09/05/2002 | US20020121676 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
| 09/05/2002 | US20020121675 Semiconductor device and method of producing the same |
| 09/05/2002 | US20020121674 Biopolar transistor with lattice matched base layer |
| 09/05/2002 | US20020121672 Receiver comprising a variable capacitance diode |
| 09/05/2002 | US20020121669 Organic superconductive field-effect switching device |
| 09/05/2002 | US20020121667 Thin film transistor and fabricating method thereof |
| 09/05/2002 | US20020121665 Semiconductor device and method of manufacturing the same |
| 09/05/2002 | US20020121664 Lateral semiconductor component in thin-film SOI technology |
| 09/05/2002 | US20020121663 Semiconductor device and method |
| 09/05/2002 | US20020121662 Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component |
| 09/05/2002 | US20020121661 Semiconductor device having a stacked gate insulation film and a gate electrode and manufacturing method thereof |
| 09/05/2002 | US20020121660 Semiconductor device |
| 09/05/2002 | US20020121658 DRAM having a guard ring and process of fabricating the same |
| 09/05/2002 | US20020121654 Semiconductor device and manufacturing method thereof |
| 09/05/2002 | US20020121649 Structure of protection against noise |
| 09/05/2002 | US20020121648 An in0.34assb0.15/inp hfet utilizing inp channels |
| 09/05/2002 | US20020121647 Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
| 09/05/2002 | US20020121641 Passivated silicon carbide devices with low leakage current and method of fabricating |
| 09/05/2002 | US20020121640 Active matrix electro-luminescent display with an organic leveling layer |
| 09/05/2002 | US20020121639 Thin film transistor and manufacturing method thereof, and active matrix display device and manufacturing method thereof |
| 09/05/2002 | US20020121088 Gas specie electron-jump chemical energy converter |
| 09/05/2002 | DE10201864A1 CMOS-Halbleitervorrichtung und -verfahren zur Herstellung derselben CMOS semiconductor device and method of manufacturing the same |
| 09/05/2002 | DE10162569A1 Halbleitervorrichtung Semiconductor device |
| 09/05/2002 | DE10151700A1 Feldeffekt-Halbleiterbauelement Field effect semiconductor device |
| 09/05/2002 | DE10134665C1 Operating method for semiconductor element has differential resistance switched to lesser value above given current limit |
| 09/05/2002 | DE10106836A1 Integrierte Schaltungsanordnung aus einem flächigen Substrat Integrated circuit arrangement of a planar substrate |
| 09/05/2002 | DE10106606A1 Negative resistance in VLSI circuitry, is formed by transistor with floating gate which varies in width along transistor channel |
| 09/05/2002 | DE10106359C1 Laterales Halbleiterbauelement in Dünnfilm-SOI-Technik Lateral semiconductor component in thin film SOI technology |
| 09/05/2002 | DE10105872A1 Arrangement used in the manufacture of matrix displays comprises a substrate having a recess, and a chip provided in the recess with a layer formed on the peripheral surface of the recess and/or chip |
| 09/05/2002 | DE10105871A1 Switching circuit arrangement used in microelectronics comprises a switching circuit with molecular electronic molecules having an output, and a single electron transistor with an input |
| 09/05/2002 | DE10102721A1 Transistor structure used as a lateral VMOS transistor comprises an n-doped substrate layer, a p+-doped layer, an epitaxially grown n-doped layer, a p-doped p-sink, p+-doped pockets and a polysilicon layer |
| 09/04/2002 | EP1237201A2 Insulated gate semiconductor device and method of manufacturing the same |
| 09/04/2002 | EP1237200A2 High voltage semiconductor device and method for manufacturing the same |
| 09/04/2002 | EP1237199A2 Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain |