Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2002
09/12/2002US20020125565 Semiconductor device
09/12/2002US20020125557 Package of a chip with beveled edges
09/12/2002US20020125549 Low k dielectric materials with inherent copper ion migration barrier
09/12/2002US20020125548 Semiconductor circuit, method of driving the same and semiconductor device
09/12/2002US20020125545 Spherical semiconductor device containing two or more spherical semiconductors combined together
09/12/2002US20020125544 Semiconductor memory device with sidewalls
09/12/2002US20020125542 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure and method of manufacturing the same
09/12/2002US20020125541 Method of fabricating trench junction barrier rectifier
09/12/2002US20020125540 Semiconductor device, method for manufacturing the same, and liquid jet apparatus
09/12/2002US20020125539 Semiconductor device having contact electrode to semiconductor substrate
09/12/2002US20020125536 Semiconductor device and a method of manufacturing the same
09/12/2002US20020125535 Thin-film transistor, method for fabricating the same, and liquid crystal display device
09/12/2002US20020125534 Semiconductor device having silicon-on-insulator structure and method of fabricating the same
09/12/2002US20020125533 Thin film transistor substrate and process for producing the same
09/12/2002US20020125532 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component
09/12/2002US20020125531 Semiconductor device and method of manufacturing the same
09/12/2002US20020125530 High voltage metal oxide device with multiple p-regions
09/12/2002US20020125529 Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
09/12/2002US20020125528 Vertical-type power MOSFET with a gate formed in a trench
09/12/2002US20020125527 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
09/12/2002US20020125526 Semiconductor devices and processes for making them
09/12/2002US20020125525 Nonvolatile semiconductor memory cell and method for fabricating the memory cell
09/12/2002US20020125520 High gate coupling non-volatile memory structure
09/12/2002US20020125519 Capacitor of semiconductor device and manufacturing method for the same
09/12/2002US20020125518 Ferroelectric transistor
09/12/2002US20020125515 Field effect transistor using zirconiumtitanate thin film
09/12/2002US20020125511 Semiconductor device, method of manufacturing the same and liquid jet apparatus
09/12/2002US20020125510 Field effect transistor and semiconductor device manufacturing method
09/12/2002US20020125509 Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
09/12/2002US20020125507 Interruptable high-voltage current limiter suitable for monolithic integration
09/12/2002US20020125506 Semiconductor device and GaN-based field effect transistor for use in the same
09/12/2002US20020125503 Gate oxide stabilization by means of germanium components in gate conductor
09/12/2002US20020125502 Semiconductor device
09/12/2002US20020125498 Method of preparing indium phosphide heterojunction bipolar transistors
09/12/2002US20020125497 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
09/12/2002US20020125496 Compound semiconductor rectifier device structure
09/12/2002US20020125493 Optical detector and method of producing an arrangement of multiple semiconductor layers
09/12/2002US20020125483 Insulated base semiconductor component
09/12/2002US20020125482 Semiconductor device made from silicon carbide with a schottky contact and an ohmic contact made from a nickel-aluminum material and process for producing the semiconductor device
09/12/2002US20020125481 Semiconductor device, circuit board, electro-optical device, and electronic apparatus
09/12/2002US20020125480 Semiconductor device and method for manufacturing the same
09/12/2002US20020125477 Thin film transistors with dual layered source/drain electrodes and manufacturing method thereof, and active matrix display device and manufacturing method thereof
09/12/2002US20020125476 Novel CMOS circuit of GaAs/Ge on Si substrate
09/12/2002US20020125475 High speed composite p-channel Si/SiGe heterostructure for field effect devices
09/12/2002US20020125474 Semiconductor device and pattern layout method thereof
09/12/2002US20020125473 Semiconductor device and method of analyzing same
09/12/2002US20020125471 CMOS inverter circuits utilizing strained silicon surface channel MOSFETS
09/12/2002US20020125437 Uneven pattern sensing device
09/12/2002US20020125410 Active matrix display device and method of manufacturing the same
09/12/2002US20020125213 Dry etching apparatus, etching method, and method of forming a wiring
09/12/2002US20020124646 Method and apparatus for detecting liquid level
09/12/2002DE10208577A1 Flash-Speicher mit geteilter Gate-Elektrode und Verfahren zu seiner Herstellung Flash memory split-gate electrode and method for its preparation
09/12/2002DE10207522A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
09/12/2002DE10160501A1 Festkörper-Bildverarbeitungseinrichtung Solid-state imaging device
09/12/2002DE10143256A1 Integrierter SOI-Halbleiterschaltkreis und Herstellungsverfahren hierfür SOI semiconductor integrated circuit, and manufacturing method thereof
09/12/2002DE10137343C1 Semiconductor structure used as lateral diffused metal oxide semiconductor transistor comprises substrate with source and drain regions, channel region between source and drain regions, and field plate over transition between drain sections
09/12/2002DE10108913A1 Zeiterfassungsvorrichtung und Zeiterfassungsverfahren unter Verwendung eines Halbleiterelements Time detecting means and time recording method using a semiconductor element
09/12/2002DE10108046A1 Semiconductor device e.g. compensation FET has compensation regions connected to active zone via resistance
09/12/2002DE10107149A1 Semiconductor chip processing method for mounting in miniature package by melting edges of separated chips to make smooth
09/12/2002DE10103052C1 Schaltkreis zum Erzeugen eines asynchronen Signalpulses Circuit for generating an asynchronous signal pulse
09/11/2002EP1239523A2 Power accumulation-mode MOSFET having a trench gate electrode
09/11/2002EP1239522A2 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure and method of manufacturing the same
09/11/2002EP1239521A1 Method for forming ordered structure of fine metal particles
09/11/2002EP1239513A2 Manufacturing method of semiconductor device
09/11/2002EP1239323A1 Active matrix display device
09/11/2002EP1238460A2 Magnetic logic device having magnetic quantum dots
09/11/2002EP1238433A2 Semiconductor circuit arrangement and a method for producing same
09/11/2002EP1238432A2 Receiver comprising a variable capacitance diode
09/11/2002EP1238424A1 Bipolar transistor structure
09/11/2002EP1238420A1 Mosfet device system and method
09/11/2002EP1238416A1 Boron diffusion barrier layer and its use in semiconductor device fabrication
09/11/2002EP0990266B1 Hyperfrequency transistor with quasi-aligned structure and method for making same
09/11/2002EP0865671B1 Normally conducting dual thyristor
09/11/2002CN1369113A Method for providing dopant level for polysilicon for flash memory devices
09/11/2002CN1368763A Once programmable semiconductor nonvolatile memory device and making method thereof
09/11/2002CN1368762A Metal-insulator-metal field effect-transistor
09/11/2002CN1368756A Near-loop grid and technology for preparing silicon semiconductor device with it
09/11/2002CN1368718A Liquid crystal display and its making method
09/11/2002CN1368655A Liquid crystal display device and its manufacturing method
09/11/2002CN1090823C Semicondctor composition sensor and differential pressure sender
09/11/2002CN1090821C 绝缘栅场效应晶体管 Insulated gate field effect transistor
09/11/2002CN1090813C Method for producing semiconductor devices
09/10/2002US6449026 Fringe field switching liquid crystal display and method for manufacturing the same
09/10/2002US6449022 Liquid crystal display
09/10/2002US6448859 High frequency power amplifier having a bipolar transistor
09/10/2002US6448852 Battery polarity insensitive integrated circuit amplifier
09/10/2002US6448648 Metalization of electronic semiconductor devices
09/10/2002US6448625 High voltage metal oxide device with enhanced well region
09/10/2002US6448620 Semiconductor device and process for producing the same
09/10/2002US6448619 Semiconductor device
09/10/2002US6448614 Germanium silicide; high speed transistors
09/10/2002US6448613 Fabrication of a field effect transistor with minimized parasitic Miller capacitance
09/10/2002US6448612 Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor
09/10/2002US6448611 High power semiconductor device and fabrication method thereof
09/10/2002US6448607 Nonvolatile memory having embedded word lines
09/10/2002US6448606 Semiconductor with increased gate coupling coefficient
09/10/2002US6448601 Memory address and decode circuits with ultra thin body transistors
09/10/2002US6448593 Type-1 polysilicon electrostatic discharge transistors
09/10/2002US6448592 Charge coupled device, and method of manufacturing such a device
09/10/2002US6448589 Single side contacts for a semiconductor device