Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2002
09/17/2002US6452231 Semiconductor device
09/17/2002US6452230 High voltage mosgated device with trenches to reduce on-resistance
09/17/2002US6452229 Ultra-thin fully depleted SOI device with T-shaped gate and method of fabrication
09/17/2002US6452228 Silicon carbide semiconductor device
09/17/2002US6452227 Semiconductor memory device and manufacturing method thereof
09/17/2002US6452226 Non-volatile semiconductor memory device and manufacturing method thereof
09/17/2002US6452224 Method for manufacture of improved deep trench eDRAM capacitor and structure produced thereby
09/17/2002US6452222 MIS type semiconductor device and method for manufacturing the same
09/17/2002US6452221 Enhancement mode device
09/17/2002US6452219 Insulated gate bipolar transistor and method of fabricating the same
09/17/2002US6452213 Semiconductor device having first, second and third non-crystalline films sequentially formed on insulating base with second film having thermal conductivity not lower than that of first film and not higher than that of third film, and method of manufacturing the same
09/17/2002US6452211 Semiconductor thin film and semiconductor device
09/17/2002US6452210 Thin film transistor substrate and fabricating method thereof
09/17/2002US6452207 Thin film transistor with fluorene oligomer layer deposited by simple evaporation; high mobility
09/17/2002US6452205 Sparse-carrier devices and method of fabrication
09/17/2002US6452086 Solar cell comprising a bypass diode
09/17/2002US6451713 Semiconductors
09/17/2002US6451711 Semiconductors, gadolinium oxide
09/17/2002US6451690 Method of forming electrode structure and method of fabricating semiconductor device
09/17/2002US6451676 Method for setting the threshold voltage of a MOS transistor
09/17/2002US6451675 Semiconductor device having varied dopant density regions
09/17/2002US6451660 Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water
09/17/2002US6451659 In semiconductors
09/17/2002US6451658 Graded layer for use in semiconductor circuits and method for making same
09/17/2002US6451652 Method for forming an EEPROM cell together with transistor for peripheral circuits
09/17/2002US6451647 Semiconductors
09/17/2002US6451645 Method for manufacturing semiconductor device with power semiconductor element and diode
09/17/2002US6451644 Method of providing a gate conductor with high dopant activation
09/17/2002US6451643 Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs
09/17/2002US6451642 Method to implant NMOS polycrystalline silicon in embedded FLASH memory applications
09/17/2002US6451641 Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
09/17/2002US6451640 Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
09/17/2002US6451638 Semiconductor and process for fabricating the same
09/17/2002US6451636 Semiconductor device and display device having laser-annealed semiconductor element
09/17/2002US6451635 Photolithography system and a method for fabricating a thin film transistor array substrate using the same
09/17/2002US6451633 Method for manufacturing semiconductor integrated circuit
09/17/2002US6451632 Method for manufacturing thin-film transistor substrate, liquid crystal display unit
09/17/2002US6451631 Thin film crystal growth by laser annealing
09/17/2002US6451630 Source and drain electrodes, and the gate electrode are simultaneously formed, so the number of photolithography processes can be reduced, improving productivity and yield
09/17/2002US6450038 High-precision pressure sensor
09/12/2002WO2002071562A2 Quantum dot vertical cavity surface emitting laser
09/12/2002WO2002071495A1 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
09/12/2002WO2002071493A2 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog
09/12/2002WO2002071492A1 Bipolar transistor
09/12/2002WO2002071491A1 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
09/12/2002WO2002071490A1 A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
09/12/2002WO2002071488A1 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
09/12/2002WO2002071478A1 Thin film transistors and method of manufacture
09/12/2002WO2002071477A1 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
09/12/2002WO2002071475A1 Method for producing thin layers on a specific support and an application thereof
09/12/2002WO2002071449A2 COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (> 2eV) BANDGAP SEMICONDUCTORS
09/12/2002WO2002071448A2 Single transistor ferroelectric memory cell
09/12/2002WO2002071410A2 Higher program threshold voltage and faster programming rates based on improved erase methods
09/12/2002WO2002071137A1 Display device
09/12/2002WO2002061821A9 Method of preparing indium phosphide heterojunction bipolar transistors
09/12/2002WO2002027390A3 A method of forming electrodes or pixel electrodes and a liquid crystal display device
09/12/2002WO2002013268A3 Module, especially a wafer module
09/12/2002WO2001067570A3 Buried mesa semiconductor device
09/12/2002WO2001016581A9 Efficient radiation coupling to quantum-well radiation-sensing array via evanescent waves
09/12/2002WO2001015171A3 Flash memory architecture employing three layer metal interconnect
09/12/2002US20020128515 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus
09/12/2002US20020127890 Semiconductor devices and the manufacturing method of the same
09/12/2002US20020127888 Method of forming a metal gate
09/12/2002US20020127885 High-pressure anneal process for integrated circuits
09/12/2002US20020127872 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
09/12/2002US20020127868 Integrated circuits and methods for their fabrication
09/12/2002US20020127857 Active matrix substrate and method for producing the same
09/12/2002US20020127856 Nitride-based semiconductor element and method of forming nitride-based semiconductor
09/12/2002US20020127841 Method of manufacturing semiconductor device
09/12/2002US20020127833 Method for fabricating metal interconnections
09/12/2002US20020127832 Manufacturing method of semiconductor device
09/12/2002US20020127831 Semiconductor component and method of manufacturing
09/12/2002US20020127830 Heating treatment device, heating treatment method and fabrication method of semiconductor device
09/12/2002US20020127819 Semiconductor device and fabrication process therefor
09/12/2002US20020127814 Semiconductor device and manufacturing method thereof
09/12/2002US20020127813 Method for using thin spacers and oxidation in gate oxides
09/12/2002US20020127805 Method of manufacturing semiconductor integrated circuit device including nonvolatile semiconductor memory devices
09/12/2002US20020127804 Method of making non-volatile memory with sharp corner
09/12/2002US20020127802 Nonvolatile semiconductor memory device and method for manufacturing the same
09/12/2002US20020127798 2F2 memory device system and method
09/12/2002US20020127795 Semiconductor device having trench capacitor and method for manufacturing the same
09/12/2002US20020127794 Semiconductor memory device and manufacturing method thereof
09/12/2002US20020127791 Semiconductor device and its manufacture method
09/12/2002US20020127788 Method of manufacturing semiconductor device and semiconductor device
09/12/2002US20020127787 Single supply hfet with temperature compensation
09/12/2002US20020127785 Method of manufacturing a semiconductor device
09/12/2002US20020127784 Method of manufacturing SOI element having body contact
09/12/2002US20020127765 Minitab rectifier for alternators
09/12/2002US20020127753 Method of manufacturing organic EL display
09/12/2002US20020127752 Providing a quantum well structure comprising an Indium Gallium Arsenide Phosphide (InGaAsP); providing Indium Phosphide layers with vacancy type defects; Rapid Thermal Annealing (RTA) controlled diffusion
09/12/2002US20020127749 Characteristic evaluation apparatus for insulated gate type transistors
09/12/2002US20020127405 Diamond semiconductor and method for the fabrication thereof
09/12/2002US20020126536 Deaprom and transistor with gallium nitride or gallium aluminum nitride gate
09/12/2002US20020126532 Non-volatile semiconductor memory device
09/12/2002US20020126250 Active-matrix substrate, electro-optical device, method for manufacturing active-matrix substrate, and electronic equipment
09/12/2002US20020126243 Liquid crystal device and method of manufacturing the same
09/12/2002US20020126241 Liquid crystal display device
09/12/2002US20020126235 Liquid crystal displays
09/12/2002US20020126231 Electro-optical device and manufacturing method thereof
09/12/2002US20020125820 Pixel structure of an organic light-emitting diode display device and its fabrication method