| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/19/2002 | US20020132383 Method of manufacturing a semiconductor device |
| 09/19/2002 | US20020131304 Twin monos memory cell usage for wide program |
| 09/19/2002 | US20020131003 Active matrix type liquid crystal display device and method of manufacturing the same |
| 09/19/2002 | US20020131002 Electrode substrate for liquid crystal display panel, method of fabricating the electrode substrate, and liquid crystal display panel |
| 09/19/2002 | US20020130983 Liquid crystal display |
| 09/19/2002 | US20020130679 Characteristic evaluation apparatus for insulated gate type transistors |
| 09/19/2002 | US20020130614 Display device |
| 09/19/2002 | US20020130426 Semiconductor device, memory system, and electronic instrument |
| 09/19/2002 | US20020130409 Semiconductor device and drive circuit using the semiconductor devices |
| 09/19/2002 | US20020130394 Semiconductor device and manufacturing method thereof |
| 09/19/2002 | US20020130393 Semiconductor device and method of fabricating the same |
| 09/19/2002 | US20020130392 Internally ballasted silicon germanium transistor |
| 09/19/2002 | US20020130391 Method for manufacturing a package structure of integrated circuits |
| 09/19/2002 | US20020130390 ESD protection circuit with very low input capacitance for high-frequency I/O ports |
| 09/19/2002 | US20020130378 Technique to mitigate short channel effects with vertical gate transistor with different gate materials |
| 09/19/2002 | US20020130377 Method for improved plasma nitridation of ultra thin gate dielectrics |
| 09/19/2002 | US20020130376 Method to reduce transistor channel length using SDOX |
| 09/19/2002 | US20020130374 Semiconductor device and method of manufacturing the same |
| 09/19/2002 | US20020130373 Semiconductor device and manufacturing method thereof |
| 09/19/2002 | US20020130372 Semiconductor device having silicide thin film and method of forming the same |
| 09/19/2002 | US20020130370 Bipolar/bicmos semiconductor device |
| 09/19/2002 | US20020130368 Method for protecting MOS components form antenna effect and the apparatus thereof |
| 09/19/2002 | US20020130365 Novel UMOS-like gate-controlled thyristor structure for ESD protection |
| 09/19/2002 | US20020130363 Semiconductor device and fabrication method thereof |
| 09/19/2002 | US20020130362 High voltage semiconductor device having high breakdown voltage and method of fabricating the same |
| 09/19/2002 | US20020130361 Semiconductor device with laterally varying p-top layers |
| 09/19/2002 | US20020130360 High voltage MOS device with no field oxide over the p-top region |
| 09/19/2002 | US20020130359 Semiconductor device and method of manufacturing the same |
| 09/19/2002 | US20020130358 Semiconductor devices |
| 09/19/2002 | US20020130356 Novel split gate flash cell for multiple storage |
| 09/19/2002 | US20020130355 Semiconductor device and method of manufacturing the same |
| 09/19/2002 | US20020130354 Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same |
| 09/19/2002 | US20020130353 Nanoscopic wire-based devices, arrays, and methods of their manufacture |
| 09/19/2002 | US20020130352 Semiconductor device comprising an EEPROM memory and a FLASH-EPROM memory, and method of manufacturing such a semiconductor device |
| 09/19/2002 | US20020130351 One-sided floating-gate memory cell |
| 09/19/2002 | US20020130350 Flash memory device and a method for fabricating the same |
| 09/19/2002 | US20020130349 Semiconductor structures formed using redeposition of an etchable layer |
| 09/19/2002 | US20020130344 Semiconductor device |
| 09/19/2002 | US20020130340 Method of forming a multilayer dielectric stack |
| 09/19/2002 | US20020130338 Structures, methods, and systems for ferroelectric memory transistors |
| 09/19/2002 | US20020130333 Transistor |
| 09/19/2002 | US20020130332 Layout method of latch-up prevention circuit of a semiconductor device |
| 09/19/2002 | US20020130331 Semiconductor device and method of manufacturing the same |
| 09/19/2002 | US20020130330 High voltage semiconductor device using sipos and methods for fabricating the same |
| 09/19/2002 | US20020130325 Method of achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
| 09/19/2002 | US20020130324 Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same |
| 09/19/2002 | US20020130323 Semiconductor device and method of manufacturing the same |
| 09/19/2002 | US20020130322 Semiconductor device having a thin film transistor |
| 09/19/2002 | US20020130321 Solid-state imaging device |
| 09/19/2002 | US20020130318 Ceramic electronic component |
| 09/19/2002 | US20020130314 Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure and fabrication method thereof |
| 09/19/2002 | US20020130312 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 09/19/2002 | US20020130311 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 09/19/2002 | DE10211688A1 Semiconducting component has breakdown inhibition zone enclosing vertical drain drift zone between active zone and low electrical resistance layer on main surfaces |
| 09/19/2002 | DE10210662A1 Power semiconducting component has length of gate electrode layer on first isolation film and total isolation film thickness directly beneath gate electrode tip that exceed/equal lower limits |
| 09/19/2002 | DE10203479A1 Halbleitereinrichtung Semiconductor device |
| 09/19/2002 | DE10123818A1 Arrangement with protection function for semiconducting component has device that implements protection function controlled by floating region of semiconducting component |
| 09/19/2002 | DE10111462A1 Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur And thyristor surge protection device with such a thyristor |
| 09/19/2002 | DE10110150A1 Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray A method of manufacturing of metallic bit lines for memory cell arrays, methods of making arrays of memory cells and memory cell array |
| 09/19/2002 | CA2451882A1 Nanofabrication |
| 09/18/2002 | EP1241745A2 Laser apparatus |
| 09/18/2002 | EP1241711A2 Semiconductor element, and method of forming silicon-based film |
| 09/18/2002 | EP1241708A2 Semiconductor memory device with floating body |
| 09/18/2002 | EP1241707A2 SOI substrate, annealing method therefor, semiconductor device having the SOI substrate, and method of manufacturing the same |
| 09/18/2002 | EP1241704A1 Fabrication method of a double polysilicon bipolar transistor with heterojunction base and corresponding transistor |
| 09/18/2002 | EP1240691A2 Field effect transistor (fet) and fet circuitry |
| 09/18/2002 | EP1240672A1 Production of single-pole components |
| 09/18/2002 | EP1240671A1 Retrograde doped buried layer transistor and method for producing the same |
| 09/18/2002 | EP1240666A2 GROWTH OF ULTRATHIN NITRIDE ON Si(100) BY RAPID THERMAL N 2? TREATMENT |
| 09/18/2002 | EP1240664A1 Integrated memory cell and method of fabrication |
| 09/18/2002 | EP1240530A1 Micromechanical structure, in particular for an acceleration sensor |
| 09/18/2002 | EP1240529A2 Method for producing micromechanical structures |
| 09/18/2002 | EP1078461B1 Circuit with individual electron components and method for the operation thereof |
| 09/18/2002 | EP0903754B1 Nonvolatile semiconductor memory |
| 09/18/2002 | EP0870357B1 Active rectifier having minimal energy losses |
| 09/18/2002 | EP0789934B1 Ballast monitoring for radio frequency power transistors |
| 09/18/2002 | CN1369918A Semiconductor device and its mfg. method |
| 09/18/2002 | CN1369917A Semiconductor element, circuit lining, photoelectric device and electronic equipment |
| 09/18/2002 | CN1369908A Mfg. method of semiconductor integrated circuit device contg. non-volatility semiconductor memory |
| 09/18/2002 | CN1369903A Method for mfg. silicon Mos field effect transistor on insulating layer |
| 09/18/2002 | CN1369872A Active matrix type displaying unit |
| 09/18/2002 | CN1369731A Liquid crystal display |
| 09/17/2002 | USRE37847 Method and apparatus for testing LCD panel array prior to shorting bar removal |
| 09/17/2002 | US6452853 Nonvolatile semiconductor memory |
| 09/17/2002 | US6452839 Method for erasing data from a single electron resistor memory |
| 09/17/2002 | US6452831 Single electron resistor memory device and method |
| 09/17/2002 | US6452781 Multilayer electronic device |
| 09/17/2002 | US6452437 Voltage generator for compensating for temperature dependency of memory cell current |
| 09/17/2002 | US6452341 EL display device, driving method thereof, and electronic equipment provided with the EL display device |
| 09/17/2002 | US6452283 Semiconductor chip with surface cover |
| 09/17/2002 | US6452274 Semiconductor device having a low dielectric layer as an interlayer insulating layer |
| 09/17/2002 | US6452252 Semiconductor device |
| 09/17/2002 | US6452249 Inductor with patterned ground shield |
| 09/17/2002 | US6452245 Semiconductor device |
| 09/17/2002 | US6452244 Film-like composite structure and method of manufacture thereof |
| 09/17/2002 | US6452242 Heterostructure having lattice matched layers with differing bandgaps composed of indium and antimony with aluminum or gallium for contact layer and arsenic, thallium and/or bismuth for active layer; infrared photodetector |
| 09/17/2002 | US6452241 Thin film transistor for use in liquid crystal display device and method for manufacturing the same |
| 09/17/2002 | US6452236 Channel implant for improving NMOS ESD robustness |
| 09/17/2002 | US6452233 SOI device having a leakage stopping layer |
| 09/17/2002 | US6452232 Semiconductor device having SOI structure and manufacturing method thereof |