Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2002
09/25/2002CN1371132A Semiconductor unit and its making process
09/25/2002CN1371123A Polycrystalline silicon grading method and system and thin film transistor making method and system
09/24/2002US6456533 Higher program VT and faster programming rates based on improved erase methods
09/24/2002US6456532 Semiconductor memory device
09/24/2002US6456013 Thin film transistor and display device
09/24/2002US6455939 Substantially hillock-free aluminum-containing components
09/24/2002US6455920 Semiconductor device having a ball grid array and a fabrication process thereof
09/24/2002US6455919 Internally ballasted silicon germanium transistor
09/24/2002US6455911 Silicon-based semiconductor component with high-efficiency barrier junction termination
09/24/2002US6455906 Depositing tungsten silicide barrier layer on wordline stack, processing wordline stack such that tungsten nitride extrusions extend from exposed surface of barrier layer, selectively etching tungsten nitride extrusions
09/24/2002US6455903 Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
09/24/2002US6455900 Semiconductor device
09/24/2002US6455897 Semiconductor device having electrostatic discharge protection circuit
09/24/2002US6455894 Semiconductor device, method of manufacturing the same and method of arranging dummy region
09/24/2002US6455893 MOS transistor with high voltage sustaining capability and low on-state resistance
09/24/2002US6455892 Silicon carbide semiconductor device and method for manufacturing the same
09/24/2002US6455890 Structure of fabricating high gate performance for NROM technology
09/24/2002US6455889 Semiconductor memory device having memory cells each having a conductive body of booster plate and a method for manufacturing the same
09/24/2002US6455887 Nonvolatile devices with P-channel EEPROM device as injector
09/24/2002US6455883 Nonvolatile semiconductor memory
09/24/2002US6455880 Microwave semiconductor device having coplanar waveguide and micro-strip line
09/24/2002US6455879 Low resistance contact semiconductor diode
09/24/2002US6455875 Thin film transistor having enhanced field mobility
09/24/2002US6455874 Thin film transistor and fabrication method thereof
09/24/2002US6455871 SiGe MODFET with a metal-oxide film and method for fabricating the same
09/24/2002US6455440 Method for preventing polysilicon stringer in memory device
09/24/2002US6455433 Method for forming square-shouldered sidewall spacers and devices fabricated
09/24/2002US6455420 Method of forming a compound film of a semiconductor and a metal by self-alignment
09/24/2002US6455403 Shallow trench contact structure to solve the problem of schottky diode leakage
09/24/2002US6455396 SOI semiconductor device capable of preventing floating body effect
09/24/2002US6455390 Method of manufacturing hetero-junction bipolar transistor
09/24/2002US6455389 Method for preventing a by-product ion moving from a spacer
09/24/2002US6455385 Semiconductor fabrication with multiple low dose implant
09/24/2002US6455384 Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers
09/24/2002US6455383 Methods of fabricating scaled MOSFETs
09/24/2002US6455380 Semiconductor device and method for fabricating the same
09/24/2002US6455379 Power trench transistor device source region formation using silicon spacer
09/24/2002US6455378 Method of manufacturing a trench gate power transistor with a thick bottom insulator
09/24/2002US6455377 Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
09/24/2002US6455374 Method of manufacturing flash memory device
09/24/2002US6455372 Nucleation for improved flash erase characteristics
09/24/2002US6455364 Semiconductor device and method for fabricating the same
09/24/2002US6455362 Double LDD devices for improved dram refresh
09/24/2002US6455361 Semiconductor device and manufacturing method of the same
09/24/2002US6455359 Laser-irradiation method and laser-irradiation device
09/24/2002US6455357 Thin film transistor and method of fabricating the same
09/24/2002US6455349 Method and apparatus for filling a gap between spaced layers of a semiconductor
09/24/2002US6455342 Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device
09/24/2002US6455330 Methods to create high-k dielectric gate electrodes with backside cleaning
09/24/2002US6454160 Method for hermetically encapsulating microsystems in situ
09/19/2002WO2002073712A1 Pattering method
09/19/2002WO2002073701A1 An rf power ldmos transistor
09/19/2002WO2002073700A1 Gate and cmos structure and mos structure
09/19/2002WO2002073699A2 Nanofabrication
09/19/2002WO2002073698A2 A 2f2 memory device system and method
09/19/2002WO2002073697A1 Semiconductor integrated circuit device and process for producing the same
09/19/2002WO2002073696A1 Process for producing semiconductor integrated circuit device
09/19/2002WO2002073695A2 Thyristor configuration and surge suppressor comprising a thyristor configuration of this type
09/19/2002WO2002073662A2 Non-uniform power semiconductor and method for making
09/19/2002WO2002073527A2 Solid-state quantum dot devices and quantum computing using nanostructured logic dates
09/19/2002WO2002072714A1 Solutions and dispersions of organic semiconductors
09/19/2002WO2002043109A3 Method for producing a planar field effect transistor and a planar field effect transistor
09/19/2002WO2002015277A9 Dense arrays and charge storage devices, and methods for making same
09/19/2002WO2002013257A3 Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect
09/19/2002US20020133785 Semiconductor integrated circuit manufacturing method and model parameter extracting method, apparatus, and program
09/19/2002US20020133388 Assistance method and apparatus
09/19/2002US20020132500 Electrical connection structure, production method thereof, and electric wiring method
09/19/2002US20020132493 Method to reduce charge interface traps and channel hot carrier degradation
09/19/2002US20020132462 Spherical semiconductor device and method for fabricating the same
09/19/2002US20020132459 Method for making an access transistor
09/19/2002US20020132457 Method for avoiding the ion penetration with the plasma doping
09/19/2002US20020132456 One-step process for forming titanium silicide layer on polysilicon
09/19/2002US20020132452 Semiconductor device and method of manufacturing the same
09/19/2002US20020132439 Integrated circuit components thereof and manufacturing method
09/19/2002US20020132438 Epitaxial base bipolar transistor with raised extrinsic base
09/19/2002US20020132437 Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch
09/19/2002US20020132436 EEPROM array and method for operation thereof
09/19/2002US20020132435 High performance bipolar transistor
09/19/2002US20020132434 Stepped collector implant and method for fabrication
09/19/2002US20020132432 Field effect transistor having dielectrically isolated sources and drains and method for making same
09/19/2002US20020132431 Method for forming notch gate having self-aligned raised source/drain structure
09/19/2002US20020132430 Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array
09/19/2002US20020132424 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
09/19/2002US20020132420 Process for producing a first electrode and a second electrode, electronic component and electronic memory element
09/19/2002US20020132416 Semiconductor device and method of manufacturing the same
09/19/2002US20020132415 Metal gate stack with etch stop layer having implanted metal species
09/19/2002US20020132413 Method of fabricating a MOS transistor
09/19/2002US20020132411 Semiconducting devices and method of making thereof
09/19/2002US20020132410 Nonvolatile memory device and method for fabricating the same
09/19/2002US20020132406 High-voltage transistor with JFET conduction channels
09/19/2002US20020132405 Method of fabricating a high-voltage transistor
09/19/2002US20020132404 MOS transistor with two empty side slots on its gate and its method of formation
09/19/2002US20020132402 Method of manufacturing a semiconductor device
09/19/2002US20020132401 Method of manufacturing a transistor
09/19/2002US20020132399 Semiconductor device and method of manufacturing thereof
09/19/2002US20020132398 Thin film transistors and method of manufacture
09/19/2002US20020132396 Semiconductor device and manufacturing method thereof
09/19/2002US20020132395 Body contact in SOI devices by electrically weakening the oxide under the body
09/19/2002US20020132394 Semiconductors
09/19/2002US20020132385 Method of manufacturing array substrate