Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2002
09/26/2002US20020137321 Method of forming a metal gate electrode
09/26/2002US20020137320 Process for producing semiconductor integrated circuit device
09/26/2002US20020137318 Field effect transistor structure and method of manufacture
09/26/2002US20020137317 High K dielectric film and method for making
09/26/2002US20020137315 Method for depositing a tungsten silicide layer
09/26/2002US20020137298 Semiconductor device
09/26/2002US20020137297 Method of manufacturing semiconductor device
09/26/2002US20020137296 Twin monos cell fabrication method and array organization
09/26/2002US20020137294 Methods of forming field effect transistors and related field effect transistors constructions
09/26/2002US20020137292 High voltage metal oxide device with enhanced well region
09/26/2002US20020137291 Manufacture of trench-gate semiconductor devices
09/26/2002US20020137290 Semiconductor device and method of manufacturing the same
09/26/2002US20020137289 Method of manufacturing flash memory
09/26/2002US20020137288 Non-volatile semiconductor memory device and process for fabricating the same
09/26/2002US20020137287 Semiconductor device including insulated gate field effect transistors and method of manufacturing the same
09/26/2002US20020137286 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
09/26/2002US20020137284 Tungsten gate MOS transistor and memory cell and method of making same
09/26/2002US20020137271 Flash memory with ultra thin vertical body transistors
09/26/2002US20020137270 Method of fabricating a flash memory device
09/26/2002US20020137267 Method for crystallizing a silicon layer and fabricating a TFT using the same
09/26/2002US20020137266 Low temperature polycrystalline silicon type thin film transistor and a method of the thin film transistor fabrication
09/26/2002US20020137265 Method of fabricating a semiconductor device
09/26/2002US20020137264 Method of fabrication thin wafer IGBT
09/26/2002US20020137250 High K dielectric film and method for making
09/26/2002US20020137249 Semiconductor device and semiconductor substrate, and method for fabricating the same
09/26/2002US20020137236 AIN coated heterojunction field effect transistor and method of forming an AIN coating
09/26/2002US20020137235 Electronic devices comprising thin-film transistors, and their manufacture
09/26/2002US20020136246 Laser apparatus
09/26/2002US20020136060 Semiconductor memory
09/26/2002US20020136058 Channel write/erase flash memory cell and its manufacturing method
09/26/2002US20020135722 Liquid crystal display and fabricating method thereof
09/26/2002US20020135710 Liquid crystal display device with double metal layer source and drain electrodes and fabricating method thereof
09/26/2002US20020135549 Electro-optical apparatus and electronic unit
09/26/2002US20020135547 Self-emission display device and method for driving the same
09/26/2002US20020135312 Light emitting device, driving method for the same and electronic apparatus
09/26/2002US20020135067 Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
09/26/2002US20020135062 Process of manufacturing a composite structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material
09/26/2002US20020135048 Doped aluminum oxide dielectrics
09/26/2002US20020135046 Bipolar junction transistor with high ESD robustness and low load-capacitance
09/26/2002US20020135045 High-frequency integrated circuit device that includes differential amplification circuit
09/26/2002US20020135044 Circuit configuration for forming a MOS capacitor with a lower voltage dependence and a lower area requirement
09/26/2002US20020135041 Semiconductor integrated circuit and semiconductor device
09/26/2002US20020135040 Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
09/26/2002US20020135038 Schottky device
09/26/2002US20020135037 Power semiconductor device with temperature detector
09/26/2002US20020135032 Semiconductor device for esd protection
09/26/2002US20020135031 Method for forming a dielectric layer and semiconductor device incorporating the same
09/26/2002US20020135030 Semiconductor device and manufacturing method thereof
09/26/2002US20020135027 Semiconductor device, memory system and electronic apparatus
09/26/2002US20020135026 Semiconductor device, memory system and electronic apparatus
09/26/2002US20020135023 Dual metal gate transistors for CMOS process
09/26/2002US20020135022 A semiconductor device with a well wherein a scaling down of the layout is achieved
09/26/2002US20020135019 High breakdown voltage semiconductor device
09/26/2002US20020135016 Field effect transistor structure and method of manufacture
09/26/2002US20020135014 Charge compensation semiconductor configuration
09/26/2002US20020135013 Segmented bit line EEPROM page architecture
09/26/2002US20020135012 Semiconductor device and method for manufacturing the same
09/26/2002US20020135009 Semiconductor device and manufacturing method of the same
09/26/2002US20020135008 Vertical semiconductor component with source-down design and corresponding fabrication method
09/26/2002US20020135007 Semiconductor device and method of fabricating the same
09/26/2002US20020135002 Semiconductor device and its manufacturing method
09/26/2002US20020134998 Semiconductor devices and their peripheral termination
09/26/2002US20020134996 Information processing structures
09/26/2002US20020134992 Modified-anode gate turn-off thyristor
09/26/2002US20020134991 Semiconductor device for low voltage protection with low capacitance
09/26/2002US20020134990 Electrostatic discharge protective device incorporating silicon controlled rectifier devices
09/26/2002US20020134982 Method to form thermally stable nickel germanosilicide on SiGe
09/26/2002US20020134981 Semiconductor device and manufacturing method of the same
09/26/2002US20020134979 Electronic device
09/26/2002DE10211690A1 Semiconductor component used for a MOSFET comprises trenches in a semiconductor substrate, a gate insulating film, electrical conductors, a gate electrode, and base and source zones
09/26/2002DE10206661A1 Electronic component used in semiconductors comprises a semiconductor chip surrounded by a sawn edge having profile-sawn contours of semiconductor material and surrounded by a plastic composition forming a plastic edge
09/26/2002DE10111152A1 Halbleiterbauelement mit isolierter Basis Semiconductor component with isolated base
09/25/2002EP1244150A2 Vertical MOSFET having a trench gate electrode and method of making the same
09/25/2002EP1244149A2 Solid-state imaging device
09/25/2002EP1244148A2 Semiconductor memory
09/25/2002EP1244144A1 Nonvolatile memory and method of driving nonvolatile memory
09/25/2002EP1244142A1 Fabrication method of SOI semiconductor devices
09/25/2002EP1244141A1 Manufacturing method of a nitride semiconductor device
09/25/2002EP1244112A2 Nonvolatile memory
09/25/2002EP1244111A2 Nonvolatile memory
09/25/2002EP1244089A2 Self-emission display device and method for driving the same
09/25/2002EP1243035A2 Forming interconnects
09/25/2002EP1243034A1 Solution processed devices
09/25/2002EP1243033A1 Solution processing
09/25/2002EP1243032A2 Inkjet-fabricated integrated circuits
09/25/2002EP1243029A1 Bipolar transistor with upper heterojunction collector and method for making same
09/25/2002EP1243028A1 L- and u-gate devices for soi/sos applications
09/25/2002EP1242826A1 Acceleration sensor with limited movability in the vertical direction
09/25/2002EP0946990B1 Mos device having a gate to body connection formed on a soi substrate
09/25/2002EP0904599B1 METHOD FOR ETCHING THE GATE IN MOS TECHNOLOGY USING A SiON BASED HARD MASK
09/25/2002EP0852814B1 Quantum well mos transistor and methods for making same
09/25/2002EP0842536B1 Semiconductor switch array with electrostatic discharge protection and method of fabricating
09/25/2002EP0699344B1 EEPROM memory cell
09/25/2002EP0654169B1 Cubic metal oxide thin film epitaxially grown on silicon
09/25/2002CN1371530A Integrated circuit with high gate coupling capacitance
09/25/2002CN1371138A Semiconductor and lanthanium manganate p-n junction
09/25/2002CN1371137A Semiconductor and perovskite structure oxide p-n junction
09/25/2002CN1371136A Semiconductor and barium titanate p-n junction
09/25/2002CN1371135A Quantum type photoelectronic transistor
09/25/2002CN1371134A Semiconductor device and its making method and liquid spraying apparatus