Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/02/2002EP1244900A1 Grain growth of electrical interconnection for microelectromechanical systems (mems)
10/02/2002EP0671056B1 Power mosfet in silicon carbide
10/02/2002DE10204847A1 Halbleitervorrichtung Semiconductor device
10/02/2002DE10201314A1 Feldeffekttransitor und Verfahren zum Herstellen eines Halbleiterbauteils mit einem solchen Field effect transistor and method of manufacturing a semiconductor device with such a
10/02/2002DE10164666A1 Semiconductor device for electrostatic discharge protection comprises transistors having multi-fingered structure, multilayer interconnections separated from one another, pad conductive layer, and contact plugs
10/02/2002DE10154835A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
10/02/2002DE10146013A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
10/02/2002DE10114963A1 Halbleiterelement mit einem semimagnetischen Kontakt Semiconductor element with a semi-magnetic contact
10/02/2002DE10114036A1 Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren A process for producing micromechanical sensors and sensors produced thereby
10/02/2002DE10113252A1 Production of a trench comprises etching a semiconductor substrate to form a trench, lining with an insulating layer and a mask layer to form an insulating collar, filling with a filling material, and further treating
10/02/2002DE10063135A1 CMOS compatible lateral DMOS transistor has drift space region depleted of free charge carriers if drain voltage lower than gate isolator breakdown voltage
10/02/2002CN1372699A Memory cell arrangement
10/02/2002CN1372698A Method of producing Schottky varicap
10/02/2002CN1372689A Single transistor cell of EEPROM application
10/02/2002CN1372327A Semiconductor device and preparation method thereof
10/02/2002CN1372323A Semiconductor memory device and making method thereof
10/02/2002CN1372309A Method for making polycrystalline semiconductor layer and laser annealing device
10/02/2002CN1372242A Active dot matrix device and indicator
10/02/2002CN1091953C 半导体器件 Semiconductor devices
10/02/2002CN1091952C Semiconductor device and production method therefor
10/02/2002CN1091951C Split grid type flash eprom cell and method of making same
10/02/2002CN1091948C MOS device and making method thereof
10/02/2002CN1091947C Method for producing semiconductor device
10/02/2002CN1091945C Semiconductor devices andm ethod for making same
10/01/2002US6459632 Semiconductor memory device having redundancy function
10/01/2002US6459623 EEPROM erasing method
10/01/2002US6459622 Twin MONOS memory cell usage for wide program
10/01/2002US6459618 Method of programming a non-volatile memory cell using a drain bias
10/01/2002US6459610 Semiconductor-on-insulator transistor, memory circuitry employing semiconductor-on-insulator transistors, method of forming a semiconductor-on-insulator transistor, and method of forming memory circuitry employing semiconductor-on-insulator transistors
10/01/2002US6459466 Liquid-crystal display device with improved yield of production and method of fabricating the same
10/01/2002US6459146 Semiconductor apparatus
10/01/2002US6459142 Power MOSFET
10/01/2002US6459141 Method and apparatus for suppressing the channeling effect in high energy deep well implantation
10/01/2002US6459140 Indium-enhanced bipolar transistor
10/01/2002US6459133 Enhanced flux semiconductor device with mesa and method of manufacturing same
10/01/2002US6459128 Field-effect transistor
10/01/2002US6459126 Semiconductor device including a MIS transistor
10/01/2002US6459125 SOI based transistor inside an insulation layer with conductive bump on the insulation layer
10/01/2002US6459124 Semiconductor device and process for manufacturing the same, and electronic device
10/01/2002US6459123 Double gated transistor
10/01/2002US6459122 Semiconductor device having a U-shaped groove in the body of the device
10/01/2002US6459121 Method for producing non-violatile semiconductor memory device and the device
10/01/2002US6459120 Semiconductor device and manufacturing method of the same
10/01/2002US6459118 NAND type nonvolatile ferroelectric memory cell
10/01/2002US6459114 Nonvolatile semiconductor memory
10/01/2002US6459108 Semiconductor configuration and current limiting device
10/01/2002US6459106 Dynamic threshold voltage devices with low gate to substrate resistance
10/01/2002US6459105 Apparatus for sawing wafers employing multiple indexing techniques for multiple die dimensions
10/01/2002US6459104 Method for fabricating lateral PNP heterojunction bipolar transistor and related structure
10/01/2002US6459103 Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics
10/01/2002US6459102 Peripheral structure for monolithic power device
10/01/2002US6459101 Semiconductor device
10/01/2002US6459097 Qubit using a Josephson junction between s-wave and d-wave superconductors
10/01/2002US6459095 Chemically synthesized and assembled electronics devices
10/01/2002US6458717 Methods of forming ultra-thin buffer oxide layers for gate dielectrics
10/01/2002US6458715 Process of manufacturing semiconductor device
10/01/2002US6458701 Method for forming metal layer of semiconductor device using metal halide gas
10/01/2002US6458699 Methods of forming a contact to a substrate
10/01/2002US6458680 Method of fabricating contact pads of a semiconductor device
10/01/2002US6458679 Method of making silicide stop layer in a damascene semiconductor structure
10/01/2002US6458677 Process for fabricating an ONO structure
10/01/2002US6458675 Semiconductor device having a plasma-processed layer and method of manufacturing the same
10/01/2002US6458669 Method of manufacturing an integrated circuit
10/01/2002US6458668 Method for manufacturing hetero junction bipolar transistor
10/01/2002US6458667 High power PMOS device
10/01/2002US6458664 Forming mask layer on surface of semiconductor substrate, selectively removing region of mask layer forming gate region, forming implantation mask layer on surface of mask layer in region including gate, forming anti-punch-through region
10/01/2002US6458662 Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formed
10/01/2002US6458658 Control of floating gate oxide growth by use of an oxygen barrier
10/01/2002US6458655 Method of manufacturing semiconductor device and flash memory
10/01/2002US6458652 Methods of forming capacitor electrodes
10/01/2002US6458646 Asymmetric gates for high density DRAM
10/01/2002US6458643 Method of fabricating a MOS device with an ultra-shallow junction
10/01/2002US6458641 Method for fabricating MOS transistors
10/01/2002US6458640 GaAs MESFET having LDD and non-uniform P-well doping profiles
10/01/2002US6458639 MOS transistor with stepped gate insulator
10/01/2002US6458637 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
10/01/2002US6458636 Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
10/01/2002US6458635 Method of manufacturing a thin film semiconductor device
10/01/2002US6458633 Thin film transistor and method for fabricating the same
10/01/2002US6458632 UMOS-like gate-controlled thyristor structure for ESD protection
10/01/2002US6458613 Method for manufacturing a liquid crystal display using a selective etching method
10/01/2002US6458200 Method for fabricating thin-film transistor
10/01/2002US6457368 Noise reduced pressure sensor
09/2002
09/26/2002WO2002075892A1 Electrostatic discharge protection structures having high holding current for latch-up immunity
09/26/2002WO2002075818A2 Inductive storage capacitor
09/26/2002WO2002075817A2 Improved schottky device
09/26/2002WO2002075814A1 Bipolar transistor
09/26/2002WO2002075813A1 High k dielectric film and method for making
09/26/2002WO2002075805A1 A high performance bipolar transistor
09/26/2002WO2002075802A1 Oxide film forming method
09/26/2002WO2002075791A2 Metal gate stack with etch stop layer improved through implantation of metallic atoms
09/26/2002WO2002075787A2 Method of manufacturing a semiconductor device with metallization layers interconnected by tungsten plugs
09/26/2002WO2002075344A2 Semiconductor element comprising a semimagnetic contact
09/26/2002WO2002075291A1 Method and instrument for optically measuring constant of optical property of dielectric substance, and manufacturing system incorporating the device
09/26/2002WO2002058105A3 Direct detection of low-energy charged particles using metal oxide semiconductor circuitry
09/26/2002WO2001020656A9 Dmos transistor having a trench gate electrode and method of making the same
09/26/2002WO2000072372A8 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
09/26/2002US20020137362 Method for forming crystalline silicon nitride
09/26/2002US20020137332 Microelectronic interconnect material with adhesion promotion layer and fabrication method
09/26/2002US20020137322 Reduced mask count process for manufacture of mosgated device
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