Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2002
10/03/2002US20020142532 Method for manufacturing semiconductor device
10/03/2002US20020142531 Dual damascene copper gate and interconnect therefore
10/03/2002US20020142529 Semiconductor device comprising buried channel region and method for manufacturing the same
10/03/2002US20020142528 Method for fabricating thin film transistor including crystalline silicon active layer
10/03/2002US20020142527 Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity
10/03/2002US20020142526 Structures and methods to minimize plasma charging damage in silicon on insulator devices
10/03/2002US20020142524 Multi-thickness silicide device formed by disposable spacers
10/03/2002US20020142523 Method of fabricating semiconductor device having notched gate
10/03/2002US20020142508 Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant
10/03/2002US20020142507 SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein
10/03/2002US20020142505 Method of manufacturing an array substrate for a liquid crystal display device
10/03/2002US20020142495 Method of calculating characteristics of semiconductor device having gate electrode and program thereof
10/03/2002US20020142487 MFMOS capacitors with high dielectric constant materials and a method of making the same
10/03/2002US20020142163 Aligned fine particles, method for producing the same and device using the same
10/03/2002US20020141242 Data writing method for semiconductor memory device and semiconductor memory device
10/03/2002US20020141240 Semiconductor device and a integrated circuit card
10/03/2002US20020141237 Semiconductor memory
10/03/2002US20020140877 Thin film transistor for liquid crystal display and method of forming the same
10/03/2002US20020140459 Semiconductor integrated circuit device and pulse width changing circuit
10/03/2002US20020140447 On-chip temperature detection device
10/03/2002US20020140115 Semiconductor device
10/03/2002US20020140109 Decoupling capacitors for thin gate oxides
10/03/2002US20020140098 Semiconductor device and method of manufacturing the same
10/03/2002US20020140079 Mounting structure and mounting method of a photovoltaic element, mounting substrate for mounting a semiconductor element and method for mounting said semiconductor element on said mounting substrate
10/03/2002US20020140059 Semiconductor device
10/03/2002US20020140055 Photocell for high speed and pulsed light designs
10/03/2002US20020140054 Diode
10/03/2002US20020140049 High frequency integrated devices
10/03/2002US20020140048 Semiconductor integrated circuit device, and method of manufacturing the same
10/03/2002US20020140047 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
10/03/2002US20020140046 Optimized junction termination of semiconductor components
10/03/2002US20020140044 Semiconductor device and its manufacturing method
10/03/2002US20020140043 Semiconductor device and method of manufacturing the same
10/03/2002US20020140042 Ultra low QGD power MOSFET
10/03/2002US20020140041 Semiconductor device and method for fabricating the same
10/03/2002US20020140039 Double gate trench transistor
10/03/2002US20020140036 Dual metal gate CMOS devices and method for making the same
10/03/2002US20020140035 Semiconductor device and method of manufacturing the same
10/03/2002US20020140034 Thin-film transistor and method of making same
10/03/2002US20020140033 SOI type semiconductor device and method of forming the same
10/03/2002US20020140032 Ultra small size vertical MOSFET device and method for the manufacture thereof
10/03/2002US20020140031 Strained silicon on insulator structures
10/03/2002US20020140029 Method for frabricating semiconductor device
10/03/2002US20020140028 Double diffused field effect transistor having reduced on-resistance
10/03/2002US20020140027 Field effect transistor and method of its manufacture
10/03/2002US20020140026 Semiconductor device and method for manufacturing semiconductor device
10/03/2002US20020140025 High voltage power MOSFET having low on-resistance
10/03/2002US20020140024 Semiconductor device having divided active regions with comb-teeth electrodes thereon
10/03/2002US20020140023 Semiconductor storage element
10/03/2002US20020140022 Vertical split gate field effect transistor (fet) device
10/03/2002US20020140021 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric
10/03/2002US20020140016 Magnetic random access memory having a transistor of vertical structure and the method thereof
10/03/2002US20020140012 Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same
10/03/2002US20020140011 Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same
10/03/2002US20020140008 Semiconductor device and its manufacture
10/03/2002US20020140007 Semiconductor device and method for fabricating the same
10/03/2002US20020139998 Voltage offset diode
10/03/2002US20020139997 Compound semiconductor device having heterojunction bipolar transistor reduced in collector contact resistance by delta-doped region and process for fabrication thereof
10/03/2002US20020139996 Method for fabricating heterojunction bipolar transistors
10/03/2002US20020139995 Semiconductor device
10/03/2002US20020139994 Field-effect transistor using a group III-V compound semiconductor
10/03/2002US20020139992 Silicon carbide semiconductor device and method of fabricating the same
10/03/2002US20020139991 Semiconductor device
10/03/2002US20020139983 Fabricating method of an array substrate having polysilicon thin film transistor
10/03/2002US20020139982 Display device and method of manufacturing the same
10/03/2002US20020139981 Matrix array devices with flexible substrates
10/03/2002US20020139980 Semiconductor device
10/03/2002US20020139979 Method of crystallizing a silicon layer and method of fabricating a semiconductor device using the same
10/03/2002US20020139978 Semiconductor device and manufacturing method thereof
10/03/2002US20020139977 SOI-type semiconductor device and method of forming the same
10/03/2002US20020139973 Controllable conduction device
10/03/2002US20020139972 Active matrix substrate and method of fabricating the same
10/03/2002US20020139971 Semiconductor device and method for fabricating same
10/03/2002US20020139970 Semiconductor radiation detector with internal gain
10/03/2002US20020139955 Method of the synthesis and control of PGO spin-coating precursor solutions
10/03/2002US20020139933 Infrared sensor device and manufacturing method thereof
10/03/2002US20020139187 Angular velocity sensor
10/03/2002EP1145298A3 Method for producing schottky diodes
10/02/2002EP1246271A2 Organic semiconductor diode
10/02/2002EP1246270A2 Organic semiconductor diode
10/02/2002EP1246259A2 Short turn-off time photoconductive switch
10/02/2002EP1246258A1 Semiconductor device, method of manufacture thereof, and information processing device
10/02/2002EP1246257A2 Semiconductor switching device
10/02/2002EP1246256A2 Nitride field effect transistor
10/02/2002EP1246255A2 Insulated gate bipolar transistor and method of making the same
10/02/2002EP1246254A2 MFOS memory transistor and method of fabricating same
10/02/2002EP1246253A2 MFMOS transistor memory structures with high dielectric constant materials and a method of making the same
10/02/2002EP1246252A2 Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor
10/02/2002EP1246251A2 Infrared sensor device and manufacturing method thereof
10/02/2002EP1246248A2 SOI semiconductor wafer and semiconductor device formed therein
10/02/2002EP1246247A2 A semiconductor memory and its production process
10/02/2002EP1246237A2 A method of forming isolation trenches between active regions for an E2PROM cell
10/02/2002EP1246234A2 Method of manufacturing thin film transistor
10/02/2002EP1246196A2 Twin MONOS memory cell usage for wide program bandwidth
10/02/2002EP1246195A2 Non-volatile semiconductor memory and its driving method
10/02/2002EP1245051A1 Dmos transistor protected against polarity reversal
10/02/2002EP1245050A1 Controllable semiconductor switching element that blocks in both directions
10/02/2002EP1245049A2 Field effect transistor structure with partially isolated source/drain junctions and methods of making same
10/02/2002EP1245039A2 Three dimensional device integration method and integrated device
10/02/2002EP1245002A2 Qubit using a josephson junction between s-wave and d-wave superconductors
1 ... 1683 1684 1685 1686 1687 1688 1689 1690 1691 1692 1693 1694 1695 1696 1697 1698 1699 1700 1701 1702 1703 ... 2182