Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2000
01/20/2000WO2000003419A2 Wafer cleaning apparatus
01/20/2000WO2000003418A2 Intelligent wafer handling system and method
01/20/2000WO2000003417A1 Device and method for providing a complete wafer stack
01/20/2000WO2000003416A2 A wafer carrier having a low tolerance build-up
01/20/2000WO2000003415A1 Rf matching network with distributed outputs
01/20/2000WO2000003414A1 Feedthrough overlap coil
01/20/2000WO2000003413A1 Method for observing specimen and device therefor
01/20/2000WO2000003395A1 Ferroelectric ram arrangement
01/20/2000WO2000003357A1 Identifying and handling device tilt in a three-dimensional machine-vision image
01/20/2000WO2000003345A1 Semiconductor component having a passivation
01/20/2000WO2000003339A1 Two-dimensional to three-dimensional vlsi design
01/20/2000WO2000003307A1 Maskless photolithography system
01/20/2000WO2000003306A1 Composition for stripping photoresist and organic materials from substrate surfaces
01/20/2000WO2000003304A1 Method for decontaminating microlithography projection lighting devices
01/20/2000WO2000003301A2 Exposure device having a planar motor
01/20/2000WO2000003296A1 A reflection system for imaging on a nonplanar substrate
01/20/2000WO2000003284A1 Multiplexer for laser lithography
01/20/2000WO2000003252A2 Multi-point probe
01/20/2000WO2000003234A1 Automatic defect classification with invariant core classes
01/20/2000WO2000003232A1 Improved process monitor
01/20/2000WO2000003198A1 Machine vision and semiconductor handling
01/20/2000WO2000003169A2 Manifold system of removable components for distribution of fluids
01/20/2000WO2000003072A1 Method and apparatus for copper plating using electroless plating and electroplating
01/20/2000WO2000003071A1 Electroplating reactor including back-side electrical contact apparatus
01/20/2000WO2000003065A1 Surface treatment apparatus
01/20/2000WO2000003064A1 Gas distributor plate for a processing apparatus
01/20/2000WO2000003061A1 Method and apparatus for forming amorphous and polycrystalline silicon germanium alloy films
01/20/2000WO2000003059A1 Systems and methods for two-sided etch of a semiconductor substrate
01/20/2000WO2000003057A1 Multi-position load lock chamber
01/20/2000WO2000003056A1 System and method for reducing particles in epitaxial reactors
01/20/2000WO2000002824A1 Heating a substrate support in a substrate handling chamber
01/20/2000WO2000002808A1 Robots for microelectronic workpiece handling
01/20/2000WO2000002804A1 Opening system compatible with a vertical interface
01/20/2000WO2000002803A1 Dual arm substrate handling robot with a batch loader
01/20/2000WO2000002798A1 Cushioned wafer container
01/20/2000WO2000002708A1 Polishing pads for a semiconductor substrate
01/20/2000WO2000002707A1 Polishing pad for a semiconductor substrate
01/20/2000WO2000002675A1 Automated semiconductor processing system
01/20/2000WO2000002673A1 Wafer edge scrubber
01/20/2000WO2000002672A1 Cleaning apparatus
01/20/2000WO2000002670A1 Apparatus and method for coating a semiconductor device with fluid
01/20/2000WO1999060613A3 Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system
01/20/2000DE19933213A1 Apparatus and method for surface treatment of semiconductor substrates, involving collection, detection, analysis and evaluation of infrared (or near infrared) radiation from substrates for purposes of control of treatment conditions
01/20/2000DE19932429A1 Blanking aperture array (BAA) arrangement for electron beam lithography
01/20/2000DE19932269A1 Verfahren und Vorrichtung zur Herstellung eines Verbundes zwischen einem Trägerkörper und mindestens einer darin enthaltenen Komponente Method and apparatus for producing a bond between a carrier body and at least one component contained therein
01/20/2000DE19931149A1 Optical semiconductor device, especially an optoelectronic integrated circuit for wideband optical communications, comprises a zinc oxide film between a gallium arsenide substrate and a gallium nitride-based light emitting-receiving layer
01/20/2000DE19928280A1 Ferroelectric memory device, especially a ferroelectric RAM for modern data processing systems, is produced by forming a capacitor with a multilayer ferroelectric layer of titanate content exceeding its zirconate content
01/20/2000DE19921015A1 Adjustment mark for detecting location of coupling layer on insulation layer of semiconductor component
01/20/2000DE19912490A1 Semiconductor memory with cut fuse layer for controlling redundant circuit
01/20/2000DE19909815A1 Gate electrode structure of MOS transistor, which consists of film lamination on gate insulating film on semiconductor substrate
01/20/2000DE19903208A1 Fused semiconductor device e.g. semiconductor memory with redundant memory cells has silicon oxide layer on either side of metal fuse for preventing fuse corrosion
01/20/2000DE19831550A1 Wire bonding between electric component(s) and substrate with contact pads
01/20/2000DE19831032A1 Base module as central transport module for work centers of cluster type for mfr. of microsystems and components on wafers etc.
01/20/2000DE19830332A1 Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld Vertical semiconductor component with reduced surface electrical field
01/20/2000DE19830162A1 Verfahren und Vorrichtung zum Reinigen von Substraten Method and apparatus for cleaning substrates
01/20/2000DE19827198A1 Single crystal aluminum nitride layers, useful as high frequency SAW filters and buffer layers for electronic and optoelectronics component deposition, are grown on silicon using silicon surface construction and reconstruction steps
01/20/2000CA2337202A1 Polishing pads for a semiconductor substrate
01/20/2000CA2336859A1 Polishing pad for a semiconductor substrate
01/20/2000CA2336851A1 Methods and apparatus for electropolishing metal interconnections on semiconductor devices
01/20/2000CA2336531A1 Multi-point probe
01/19/2000EP0973260A1 Low switching noise logic circuit
01/19/2000EP0973206A2 High withstand voltage MIS transistor
01/19/2000EP0973205A2 High voltage MOS transistor
01/19/2000EP0973204A2 MOS-Transistor with enhanced withstanding voltage and reduced on-resistance
01/19/2000EP0973203A2 Semiconductor layer with lateral variable doping and its method of fabrication
01/19/2000EP0973201A1 Stacked capacitor and method of making the same
01/19/2000EP0973200A1 Reference voltage supply circuit
01/19/2000EP0973199A2 Semiconductor device comprising a composite layer structure
01/19/2000EP0973198A2 System and method for bonding over active integrated curcuits
01/19/2000EP0973197A2 Wafer-scale package structure and circuit board used therein
01/19/2000EP0973195A1 Silver metallization by damascene method
01/19/2000EP0973194A1 Semiconductor device and manufacturing method thereof
01/19/2000EP0973193A2 Method of preparing an electronic package by co-curing adhesive and encapsulant
01/19/2000EP0973192A2 Method and apparatus for processing resin sealed lead frame
01/19/2000EP0973191A1 Method for manufacturing semiconductor integrated circuit device
01/19/2000EP0973190A2 Silicon wafer and method for producing it
01/19/2000EP0973189A2 A method for gate-stack formation including a high-K dielectric
01/19/2000EP0973188A1 Apparatus for the fabrication of tapered structures in semiconductors
01/19/2000EP0973069A2 Monitoring apparatus and method particularly useful in photolithographically processing substrates
01/19/2000EP0973068A2 Method and system for controlling the photolithography process
01/19/2000EP0972716A1 Cover-carrying thin sheet storage container
01/19/2000EP0972612A2 Polishing pad
01/19/2000EP0972575A2 Process and device for lacquering or coating a substrate
01/19/2000EP0972561A2 Vacuum apparatus
01/19/2000EP0972428A1 Plasma etching using polycarbonate etch mask
01/19/2000EP0972310A1 Method for fabricating low-resistance contacts on nitride semiconductor devices
01/19/2000EP0972309A4 Barrier layer for ferroelectric capacitor integrated on silicon
01/19/2000EP0972309A1 Barrier layer for ferroelectric capacitor integrated on silicon
01/19/2000EP0972308A1 Interconnect design with controlled inductance
01/19/2000EP0972305A1 Process for fabricating a diffused emitter bipolar transistor
01/19/2000EP0972304A1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation
01/19/2000EP0972303A1 Low dielectric constant material with improved dielectric strength
01/19/2000EP0972302A1 Direct vapor delivery of enabling chemical for enhanced hf etch process performance
01/19/2000EP0972301A1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate
01/19/2000EP0972300A2 Method of manufacturing integrated circuits
01/19/2000EP0972299A1 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
01/19/2000EP0972293A1 Electrode structure and method of making for ferroelectric capacitor integrated on silicon
01/19/2000EP0972287A1 High-efficiency miniature magnetic integrated circuit structures
01/19/2000EP0972284A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves
01/19/2000EP0972094A1 Low defect density, vacancy dominated silicon