Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2000
02/01/2000US6021081 Semiconductor memory device having strobe buffer and output buffer
02/01/2000US6021080 Semiconductor memory device having a voltage converting circuit
02/01/2000US6021065 Spin dependent tunneling memory
02/01/2000US6021061 Semiconductor memory device
02/01/2000US6020968 Method of and apparatus for inspecting residue of metal film
02/01/2000US6020964 Interferometer system and lithograph apparatus including an interferometer system
02/01/2000US6020957 System and method for inspecting semiconductor wafers
02/01/2000US6020781 Step-up circuit using two frequencies
02/01/2000US6020780 Substrate potential control circuit capable of making a substrate potential change in response to a power-supply voltage
02/01/2000US6020755 Hybrid programmable gate arrays
02/01/2000US6020749 Method and apparatus for performing testing of double-sided ball grid array devices
02/01/2000US6020746 Method and apparatus for probing an integrated circuit through the back side of an integrated circuit die
02/01/2000US6020710 Exposure method, and method of making exposure apparatus having dynamically isolated reaction frame
02/01/2000US6020686 Inductively and multi-capacitively coupled plasma reactor
02/01/2000US6020649 Plastic molded semiconductor package and a method for producing the same
02/01/2000US6020646 Intergrated circuit die assembly
02/01/2000US6020645 Semiconductor device with semiconductor chip bonded face down on circuit-carrying substrate
02/01/2000US6020644 Semiconductor memory device having bit lines and signal wiring layers different in thickness and process of fabricating thereof
02/01/2000US6020643 Semiconductor memory device having contact holes of differing structure
02/01/2000US6020642 Interconnection system in a semiconductor device
02/01/2000US6020641 Multilevel interconnection with low contact resistance in a semiconductor device
02/01/2000US6020640 Thick plated interconnect and associated auxillary interconnect
02/01/2000US6020639 Semiconductor wafer with removed CVD copper
02/01/2000US6020630 Tape automated bonding package for a semiconductor chip employing corner member cross-slots
02/01/2000US6020628 Optical component package with a hermetic seal
02/01/2000US6020624 Semiconductor package with bi-substrate die
02/01/2000US6020622 Trench isolation for semiconductor device with lateral projections above substrate
02/01/2000US6020621 Stress-free shallow trench isolation
02/01/2000US6020620 Semiconductor light-receiving device with inclined multilayer structure
02/01/2000US6020618 Semiconductor device in which thin silicon portions are formed by electrochemical stop etching method
02/01/2000US6020617 Lateral MOS transistor with weakly doped drain extension
02/01/2000US6020616 Automated design of on-chip capacitive structures for suppressing inductive noise
02/01/2000US6020615 Semiconductor-on-insulator devices including alternating thin and thick film semiconductor stripes on an insulating layer
02/01/2000US6020614 Method of reducing substrate noise coupling in mixed signal integrated circuits
02/01/2000US6020613 Field effect transistor array including resistive interconnections
02/01/2000US6020612 Semiconductor integrated circuit having efficient layout of wiring lines
02/01/2000US6020611 Semiconductor component and method of manufacture
02/01/2000US6020610 Semiconductor device and method of manufacturing the same
02/01/2000US6020609 DRAM cell with a rugged stacked trench (RST) capacitor
02/01/2000US6020608 Junction-type field-effect transistor with improved impact-ionization resistance
02/01/2000US6020607 Semiconductor device having junction field effect transistors
02/01/2000US6020606 Structure of a memory cell
02/01/2000US6020604 Compound semiconductor device
02/01/2000US6020600 Silicon carbide semiconductor device with trench
02/01/2000US6020599 Liquid crystal display having separable gate lines and gate shorting bar when the connection portion is oxidized
02/01/2000US6020598 Liquid crystal display device including crossing gate wiring
02/01/2000US6020592 Dose monitor for plasma doping system
02/01/2000US6020570 Plasma processing apparatus
02/01/2000US6020561 Printed circuit substrate with solder formed on pad-on-via and pad-off-via contacts thereof
02/01/2000US6020511 Methods, complexes, and systems for forming metal-containing films
02/01/2000US6020458 Precursors for making low dielectric constant materials with improved thermal stability
02/01/2000US6020292 Aqueous solution containing a quaternary ammonium hydroxide and corrosion inhibitor
02/01/2000US6020274 Reduction of defects at interface
02/01/2000US6020273 Forming patterned layer of conductor on substrate; then dielectric; nitriding
02/01/2000US6020271 Manufacturing method of semiconductor device
02/01/2000US6020270 Bomine and iodine etch process for silicon and silicides
02/01/2000US6020269 Ultra-thin resist and nitride/oxide hard mask for metal etch
02/01/2000US6020268 Magnetic field controlled spacer width
02/01/2000US6020267 Method for forming local interconnect metal structures via the addition of a titanium nitride anti-reflective coating
02/01/2000US6020266 Single step electroplating process for interconnect via fill and metal line patterning
02/01/2000US6020265 Method for forming a planar intermetal dielectric layer
02/01/2000US6020264 Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing
02/01/2000US6020262 Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer
02/01/2000US6020261 Process for forming high aspect ratio circuit features
02/01/2000US6020260 Annealing polysilicon layer in nitrogen
02/01/2000US6020259 Method of forming a tungsten-plug contact for a semiconductor device
02/01/2000US6020258 Method for unlanded via etching using etch stop
02/01/2000US6020257 Membrane dielectric isolation IC fabrication
02/01/2000US6020256 Method of integrated circuit fabrication
02/01/2000US6020255 Dual damascene interconnect process with borderless contact
02/01/2000US6020254 Forming contact apertures in dielectric; filling with electroconductive material; removal surface damage
02/01/2000US6020253 Decomposition; phosphiding
02/01/2000US6020252 Doping by bombardment
02/01/2000US6020251 Method of forming buried diffusion junctions in conjunction with shallow-trench isolation structures in a semiconductor device
02/01/2000US6020250 Stacked devices
02/01/2000US6020248 Method for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentration
02/01/2000US6020247 Multilayer oxidation; removal excess in vacuum; heating; annealing
02/01/2000US6020246 Forming a self-aligned epitaxial base bipolar transistor
02/01/2000US6020245 Method of manufacturing semiconductor device where characteristics can be measured at manufacture
02/01/2000US6020244 Channel dopant implantation with automatic compensation for variations in critical dimension
02/01/2000US6020243 Zirconium and/or hafnium silicon-oxynitride gate dielectric
02/01/2000US6020242 Effective silicide blocking
02/01/2000US6020241 Post metal code engineering for a ROM
02/01/2000US6020240 Method to simultaneously fabricate the self-aligned silicided devices and ESD protection devices
02/01/2000US6020239 Pillar transistor incorporating a body contact
02/01/2000US6020238 Forming dielectric layers on polycrystalline silicon
02/01/2000US6020237 Method of reducing dielectric damage due to charging in the fabrication of stacked gate structures
02/01/2000US6020236 Method to form capacitance node contacts with improved isolation in a DRAM process
02/01/2000US6020234 Increasing capacitance for high density DRAM by microlithography patterning
02/01/2000US6020233 Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same
02/01/2000US6020232 Process of fabricating transistors having source and drain regions laterally displaced from the transistors gate
02/01/2000US6020231 Method for forming LDD CMOS
02/01/2000US6020230 Process to fabricate planarized deep-shallow trench isolation having upper and lower portions with oxidized semiconductor trench fill in the upper portion and semiconductor trench fill in the lower portion
02/01/2000US6020229 Semiconductor device method for manufacturing
02/01/2000US6020228 CMOS device structure with reduced short channel effect and memory capacitor
02/01/2000US6020227 Fabrication of multiple field-effect transistor structure having local threshold-adjust doping
02/01/2000US6020226 In semiconductor wafer
02/01/2000US6020225 Method of manufacturing array substrate of a liquid crystal display device
02/01/2000US6020224 Method for making thin film transistor
02/01/2000US6020223 Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage