| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 01/26/2000 | EP0975011A1 Semiconductor substrate and method of producing same |
| 01/26/2000 | EP0975010A1 Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
| 01/26/2000 | EP0975009A1 Wafer transfer mechanism |
| 01/26/2000 | EP0975008A1 Method and device for treating a flat workpiece, in particular a semiconductor wafer |
| 01/26/2000 | EP0975006A2 Plasma density measuring method, probe used for measuring plasma density and plasma density measuring apparatus |
| 01/26/2000 | EP0975005A2 Method for controlling plasma-generating high frequency power, and plasma generating apparatus |
| 01/26/2000 | EP0974905A2 An integrated circuit memory device with redundancy |
| 01/26/2000 | EP0974868A2 Exposure apparatus |
| 01/26/2000 | EP0974817A1 Circuit board and detector, and method for manufacturing the same |
| 01/26/2000 | EP0974565A1 Aluminum nitride sintered body and method of preparing the same |
| 01/26/2000 | EP0974166A1 Nonvolatile semiconductor memory |
| 01/26/2000 | EP0974165A2 Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
| 01/26/2000 | EP0974164A2 Thin film transistors and electronic devices comprising such |
| 01/26/2000 | EP0974161A1 Semiconductor component with a structure for preventing onset of cross currents |
| 01/26/2000 | EP0974160A1 Process of manufacturing a semiconductor device including a buried channel field effect transistor |
| 01/26/2000 | EP0974159A1 Mos transistor with high doping gradient under the grid |
| 01/26/2000 | EP0974158A2 Method of manufacturing a semiconductor device |
| 01/26/2000 | EP0974157A1 Component taping method and apparatus |
| 01/26/2000 | EP0974147A1 Electrically erasable nonvolatile memory |
| 01/26/2000 | EP0974146A1 Nonvolatile memory |
| 01/26/2000 | EP0973964A1 Low defect density, self-interstitial dominated silicon |
| 01/26/2000 | EP0973963A1 Low defect density silicon |
| 01/26/2000 | EP0973962A1 Low defect density, ideal oxygen precipitating silicon |
| 01/26/2000 | EP0813745B1 Electron beam pattern-writing column |
| 01/26/2000 | EP0725975B1 Detection system for measuring high aspect ratio |
| 01/26/2000 | EP0617363B1 Defective cell substitution in EEprom array |
| 01/26/2000 | CN1242904A Display type image sensor |
| 01/26/2000 | CN1242874A lateral bipolar field effect mode hydrid transistor and method for mfg. same |
| 01/26/2000 | CN1242873A Laser based method and system for integrated circuit repair or reconfigration |
| 01/26/2000 | CN1242872A Wafer transfer device |
| 01/26/2000 | CN1242860A Sound encoder and sound decoder |
| 01/26/2000 | CN1242753A Waffer transport device |
| 01/26/2000 | CN1242729A Composition and slurry useful for metal CMP |
| 01/26/2000 | CN1242608A Field effect transistor |
| 01/26/2000 | CN1242607A Non-volatile semiconductor memory device and process for producing the same |
| 01/26/2000 | CN1242605A Microstructure including circuit integrated in substrate on one surface of which is arranged flat coil |
| 01/26/2000 | CN1242604A 半导体保护器件和功率转换器件 Semiconductor protection devices and power conversion devices |
| 01/26/2000 | CN1242603A Wiring board for bump bonding, semiconductor device assembled from wiring board and mfg. method of wiring board for bump bonding |
| 01/26/2000 | CN1242602A Wafer-scale package structure and circuit board used therein |
| 01/26/2000 | CN1242601A Method for capacitor of dynamic random access memory device |
| 01/26/2000 | CN1242600A Method for mfg. capacitor of stack type dynamic random access memory device |
| 01/26/2000 | CN1242599A Non-contact, non-invasive method of sorting CMOS chips |
| 01/26/2000 | CN1242598A Moulding resin for sealing electronic element, method and apparatus therefor |
| 01/26/2000 | CN1242597A Device structure with layer for facilitating passivation of surface states |
| 01/26/2000 | CN1242596A Method of mfg. semiconductor device |
| 01/26/2000 | CN1242595A Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication |
| 01/26/2000 | CN1242594A Method for implanting negative hydrogen ion and implanting apparatus |
| 01/26/2000 | CN1242511A System and method for optically measuring dielectric thickness in semiconductor devices |
| 01/26/2000 | CN1242404A Epoxy resin composition for bonding semiconductor chips |
| 01/26/2000 | CN1242349A Aluminum nitride sintered body and method of preparing the same |
| 01/26/2000 | CN1242335A Wafer shipper and package |
| 01/26/2000 | CN1048824C Chip carrier and method for producing same,and use thereof |
| 01/26/2000 | CN1048823C Capacitor of integrated circuit, and method for mfg. same |
| 01/26/2000 | CN1048822C Method for making fine annular charge storage electrode in a semiconductor device |
| 01/26/2000 | CN1048821C Method for forming isolation in semiconductor device |
| 01/26/2000 | CN1048820C Method for making multi-layer amorphous silicon |
| 01/26/2000 | CN1048819C Method for fabricating diffusion barrier metal layer in semiconductor device |
| 01/25/2000 | USRE36531 Semiconductor memory device including memory cells connected to a ground line |
| 01/25/2000 | US6018815 Adaptable scan chains for debugging and manufacturing test purposes |
| 01/25/2000 | US6018811 Layout for semiconductor memory device wherein intercoupling lines are shared by two sets of fuse banks and two sets of redundant elements not simultaneously active |
| 01/25/2000 | US6018688 Apparatus and method for determining whether to load a workpiece into a working device using stored and updated status flags |
| 01/25/2000 | US6018622 Method for reducing circuit area by grouping compatible storage devices |
| 01/25/2000 | US6018616 Thermal cycling module and process using radiant heat |
| 01/25/2000 | US6018492 Semiconductor memory device |
| 01/25/2000 | US6018491 Synchronous dynamic random access memory |
| 01/25/2000 | US6018484 Method and apparatus for testing random access memory devices |
| 01/25/2000 | US6018480 Method and system which permits logic signal routing over on-chip memories |
| 01/25/2000 | US6018475 MOS memory point |
| 01/25/2000 | US6018462 Multi-tip module |
| 01/25/2000 | US6018252 Dual-power type integrated circuit |
| 01/25/2000 | US6018249 Test system with mechanical alignment for semiconductor chip scale packages and dice |
| 01/25/2000 | US6018196 Semiconductor flip chip package |
| 01/25/2000 | US6018195 MOS gate structure semiconductor device |
| 01/25/2000 | US6018191 Semiconductor device |
| 01/25/2000 | US6018189 Lead frame for face-down bonding |
| 01/25/2000 | US6018188 Semiconductor device |
| 01/25/2000 | US6018186 Three-dimensional, deep-trench, high-density read-only memory (ROM) and its manufacturing method |
| 01/25/2000 | US6018185 Semiconductor device with element isolation film |
| 01/25/2000 | US6018184 Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness |
| 01/25/2000 | US6018182 Multilayer |
| 01/25/2000 | US6018181 Thin film transistor and manufacturing method thereof |
| 01/25/2000 | US6018180 Transistor formation with LI overetch immunity |
| 01/25/2000 | US6018179 Transistors having a scaled channel length and integrated spacers with enhanced silicidation properties |
| 01/25/2000 | US6018178 Fabrication process for a novel multi-storage EEPROM cell |
| 01/25/2000 | US6018176 Vertical transistor and memory cell |
| 01/25/2000 | US6018175 Gapped-plate capacitor |
| 01/25/2000 | US6018174 Bottle-shaped trench capacitor with epi buried layer |
| 01/25/2000 | US6018173 Vertically oriented capacitor structure with sloped contact opening and method for etching sloped contact openings in polysilicon |
| 01/25/2000 | US6018172 Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
| 01/25/2000 | US6018171 Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same |
| 01/25/2000 | US6018170 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
| 01/25/2000 | US6018169 Photodetectors |
| 01/25/2000 | US6018166 Multilayer; spacing between intakes and drains |
| 01/25/2000 | US6018144 Method of conveying moieties through an IR conveyor furnace with controlled temperature profile for large area processing multichip modules |
| 01/25/2000 | US6018065 Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
| 01/25/2000 | US6017829 Forming dielectric layer upon semiconductor substrate; doping metal into dielectric layer to form electrically conductive structure within dielectric layer that extends to top surface of dielectric layer |
| 01/25/2000 | US6017828 Method for preventing backside polysilicon peeling in a 4T+2R SRAM process |
| 01/25/2000 | US6017827 Introducing solvent and gas into pressurizable mixing module;setting pressure control to maintain pressure of gas; introducing solvent with dissolved gas and gas from mixing module into treatment vessel |
| 01/25/2000 | US6017826 Forming blanket chlorine containing plasma etchable layer over substrate; forming blanket hard mask layer and patterned photoresist layer; etching; stripping from sidewall of patterned chlorine containing plasma layer passivation layer |
| 01/25/2000 | US6017825 Etch rate loading improvement |