| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 04/18/2000 | US6052193 Apparatus and method for inspecting loading state of wafers in carrier |
| 04/18/2000 | US6052189 Height measurement device and height measurement method |
| 04/18/2000 | US6052185 Method and apparatus for measuring the concentration of ions implanted in semiconductor materials |
| 04/18/2000 | US6052178 Method for aligning optical elements one another on V-groove substrate |
| 04/18/2000 | US6052176 Processing chamber with optical window cleaned using process gas |
| 04/18/2000 | US6052173 Device for exposing the peripheral area of a wafer |
| 04/18/2000 | US6052168 Active matrix liquid-crystal display with verticle alignment, positive anisotropy and opposing electrodes below pixel electrode |
| 04/18/2000 | US6052074 Multi-channel digital-to-analog converters comprising with a plurality of converter units |
| 04/18/2000 | US6052025 CMOS operational amplifiers having reduced power consumption requirements and improved phase margin characteristics |
| 04/18/2000 | US6052022 Voltage boosting circuits having over-voltage protection circuits therein |
| 04/18/2000 | US6052014 Integrated circuit being capable of transferring signals of different voltage levels between its input and output |
| 04/18/2000 | US6051968 Test board provided with a capacitor charging circuit and related test method |
| 04/18/2000 | US6051889 Semiconductor device having a flip-chip structure |
| 04/18/2000 | US6051885 Semiconductor device having a conductor with a wedge shaped depression |
| 04/18/2000 | US6051884 Method of forming interconnections in an integrated circuit |
| 04/18/2000 | US6051883 Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode |
| 04/18/2000 | US6051882 Subtractive dual damascene semiconductor device |
| 04/18/2000 | US6051880 Base layer structure covering a hole of decreasing diameter in an insulation layer in a semiconductor device |
| 04/18/2000 | US6051879 Electrical interconnection for attachment to a substrate |
| 04/18/2000 | US6051878 Method of constructing stacked packages |
| 04/18/2000 | US6051877 Semiconductor device and fabrication method |
| 04/18/2000 | US6051875 Semiconductor chip |
| 04/18/2000 | US6051873 Semiconductor device including self-aligned base and emitter electrodes |
| 04/18/2000 | US6051872 Semiconductor integration device and fabrication method of the same |
| 04/18/2000 | US6051870 Process for fabricating semiconductor device including improved phosphorous-doped silicon dioxide dielectric film |
| 04/18/2000 | US6051869 Silicon-rich block copolymers to achieve unbalanced vias |
| 04/18/2000 | US6051868 Semiconductor device |
| 04/18/2000 | US6051867 Interlayer dielectric for passivation of an elevated integrated circuit sensor structure |
| 04/18/2000 | US6051866 Microstructures and single mask, single-crystal process for fabrication thereof |
| 04/18/2000 | US6051865 Transistor having a barrier layer below a high permittivity gate dielectric |
| 04/18/2000 | US6051864 Memory masking for periphery salicidation of active regions |
| 04/18/2000 | US6051863 Transistor gate conductor having sidewall surfaces upon which a spacer having a profile that substantially prevents silicide bridging is formed |
| 04/18/2000 | US6051862 MOS-technology power device integrated structure |
| 04/18/2000 | US6051861 Semiconductor device with reduced fringe capacitance and short channel effect |
| 04/18/2000 | US6051860 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit |
| 04/18/2000 | US6051859 DRAM having a cup-shaped storage node electrode recessed within an insulating layer |
| 04/18/2000 | US6051858 Ferroelectric/high dielectric constant integrated circuit and method of fabricating same |
| 04/18/2000 | US6051856 Voltage-controlled resistor utilizing bootstrap gate FET |
| 04/18/2000 | US6051851 Semiconductor devices utilizing silicide reaction |
| 04/18/2000 | US6051850 Insulated gate bipolar junction transistors having built-in freewheeling diodes therein |
| 04/18/2000 | US6051849 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| 04/18/2000 | US6051846 Monolithic integrated high-Tc superconductor-semiconductor structure |
| 04/18/2000 | US6051845 Method and apparatus for selectively marking a semiconductor wafer |
| 04/18/2000 | US6051843 Exposure apparatus and method which synchronously moves the mask and the substrate to measure displacement |
| 04/18/2000 | US6051842 Illumination optical apparatus with optical integrator |
| 04/18/2000 | US6051841 Plasma focus high energy photon source |
| 04/18/2000 | US6051823 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| 04/18/2000 | US6051815 Apparatus for heat-treating substrate and method for separating the substrate from the apparatus |
| 04/18/2000 | US6051778 Electrode structure, process production thereof and photo-electricity generating device including the electrode |
| 04/18/2000 | US6051625 Benzoin ethers of given formula which generate free radicals upon ultraviolet exposure, and free radical polymerizable poly(silsesquioxane-silicate-siloxane) containing vinylphenyl groups; storage stable, air or oxygen does not inhibit curing |
| 04/18/2000 | US6051512 Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers |
| 04/18/2000 | US6051511 Method and apparatus for reducing isolation stress in integrated circuits |
| 04/18/2000 | US6051510 Method of using a hard mask to grow dielectrics with varying characteristics |
| 04/18/2000 | US6051509 Semiconductor integrated circuit manufacturing method and device |
| 04/18/2000 | US6051508 Manufacturing method of semiconductor device |
| 04/18/2000 | US6051507 Method of fabricating capacitor with high capacitance |
| 04/18/2000 | US6051506 Method of fabrication ultra-frequency semiconductor device |
| 04/18/2000 | US6051505 Microelectronics; forming via through silicon |
| 04/18/2000 | US6051504 Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
| 04/18/2000 | US6051503 Method of surface treatment of semiconductor substrates |
| 04/18/2000 | US6051502 Forming blocking layer; anisotropically etching conductive shape |
| 04/18/2000 | US6051501 Method of reducing overetch during the formation of a semiconductor device |
| 04/18/2000 | US6051500 Device and method for polishing a semiconductor substrate |
| 04/18/2000 | US6051499 Rotation |
| 04/18/2000 | US6051498 Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish |
| 04/18/2000 | US6051497 Formation of sub-groundrule features |
| 04/18/2000 | US6051496 Use of stop layer for chemical mechanical polishing of CU damascene |
| 04/18/2000 | US6051495 Comprising a supports and a seasoning layer attached to the first surface of the support device, for seasoning a polishing pad with tungsten polishing by-product to polish tungsten |
| 04/18/2000 | US6051494 Semiconductor device having metal silicide film |
| 04/18/2000 | US6051493 Process for protecting bonded components from plating shorts |
| 04/18/2000 | US6051492 Plasma pretreating the dielectric layer with radio frequency or electron cyclotron resonance non-active gas, depositing a tungsten nitride film in the contact hole |
| 04/18/2000 | US6051491 Multilevel interconnection structure for integrated circuits and method of producing same |
| 04/18/2000 | US6051490 Method of forming wirings |
| 04/18/2000 | US6051488 Methods of forming semiconductor switching devices having trench-gate electrodes |
| 04/18/2000 | US6051487 Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode |
| 04/18/2000 | US6051486 Method and structure for replaceable gate electrode in insulated gate field effect transistors |
| 04/18/2000 | US6051485 Photomask the silicon oxide layer, etching the silicon oxide layer, applying a platinum-metal layer to the mask and the exposed substrate surface area, etching to remove the silicon oxide layer and platinum metal on the mask surface area |
| 04/18/2000 | US6051484 Semiconductor device and method of manufacturing thereof |
| 04/18/2000 | US6051483 Formation of ultra-shallow semiconductor junction using microwave annealing |
| 04/18/2000 | US6051482 Method for manufacturing buried-channel PMOS |
| 04/18/2000 | US6051480 Trench isolation for semiconductor devices |
| 04/18/2000 | US6051479 Method of fabricating shallow trench isolation |
| 04/18/2000 | US6051478 Method of enhancing trench edge oxide quality |
| 04/18/2000 | US6051477 Method of fabricating semiconductor device |
| 04/18/2000 | US6051476 Method for manufacturing capacitor of semiconductor memory device |
| 04/18/2000 | US6051475 Method for manufacturing a silicide to silicide capacitor |
| 04/18/2000 | US6051474 Negative biasing of isolation trench fill to attract mobile positive ions away from bipolar device regions |
| 04/18/2000 | US6051473 Fabrication of raised source-drain transistor devices |
| 04/18/2000 | US6051472 Semiconductor device and method of producing the same |
| 04/18/2000 | US6051471 Method for making asymmetrical N-channel and symmetrical P-channel devices |
| 04/18/2000 | US6051470 Dual-gate MOSFET with channel potential engineering |
| 04/18/2000 | US6051469 Method of fabricating bit line |
| 04/18/2000 | US6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance |
| 04/18/2000 | US6051467 Method to fabricate a large planar area ONO interpoly dielectric in flash device |
| 04/18/2000 | US6051466 Method of making a semiconductor device with a stacked cell structure |
| 04/18/2000 | US6051465 Method for fabricating nonvolatile semiconductor memory device |
| 04/18/2000 | US6051464 Method for fabricating a capacitor of a DRAM with an HSG layer |
| 04/18/2000 | US6051463 Method fabricating a data-storage capacitor for a dynamic random-access memory device |
| 04/18/2000 | US6051462 Process for producing semiconductor device comprising a memory element and a logic element |
| 04/18/2000 | US6051460 Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon |