Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2000
08/23/2000CN1264168A Method for packaging semiconductor device with convex electrode
08/23/2000CN1264167A Package method of semiconduct crystal chip and its finished products
08/23/2000CN1264166A Manufacture of shallow junction semiconductor device
08/23/2000CN1264165A Semiconductor device and manufacture method thereof
08/23/2000CN1264164A Method for formation grid oxide of metal oxide semiconductor
08/23/2000CN1264163A Method for cleaning surface of indium phosphide
08/23/2000CN1264162A Virtual pattern for aluminium chemical polishing
08/23/2000CN1264161A Pressure-sensitive adhesive belt for making semiconductor crystal wafer
08/23/2000CN1264160A Method for integrated substrate contact on insulator silicon chip with shallow ridges insulation technology
08/23/2000CN1264159A Foreign-body elminating method, film forming method, semiconductor device and film forming device
08/23/2000CN1264158A Autoregistered channel injection
08/23/2000CN1264157A Insulator base silicon structure of plane dense picture composition and manufacture technology thereof
08/23/2000CN1264156A Compound element, substrate laminate and separation method, laminate transfer and substrate manufacture method
08/23/2000CN1264061A Method for improving photoetching rubber elching resistant
08/23/2000CN1264060A Photoresist composition with excellent anti-back-exposure delayeed effect
08/23/2000CN1263923A 抛光组合物 The polishing composition
08/23/2000CN1263877A Semi-transparent alumina sintered substance and its production
08/23/2000CN1263857A Palletization transporting device for integral circuit assembly processer and transporting method thereof
08/23/2000CN1055791C Crystalline silicon film, semiconductor device and method for producing the same
08/23/2000CN1055790C Semiconductor device and method for manufacturing the same
08/23/2000CN1055789C Silicon on insulating substance and manufacturing method for same
08/23/2000CN1055788C Method for making internal connecting wires within semiconductor device
08/23/2000CN1055787C Overlay measurement mark and method of measuring overlay error between multi-pattern
08/23/2000CN1055786C Semiconductor device and manufacture method thereof
08/23/2000CN1055785C Method for manufacturing automatic aligning silicone
08/23/2000CN1055784C Semiconductor device and method for manufacturing the same
08/22/2000US6108491 Dual surface reflector
08/22/2000US6108490 Multizone illuminator for rapid thermal processing with improved spatial resolution
08/22/2000US6108262 Static memory cell having independent data holding voltage
08/22/2000US6108246 Semiconductor memory device
08/22/2000US6108242 Flash memory with split gate structure and method of fabricating the same
08/22/2000US6108239 High-density nonvolatile memory cell
08/22/2000US6108230 Semiconductor device with data line arrangement for preventing noise interference
08/22/2000US6108212 Surface-mount device package having an integral passive component
08/22/2000US6108210 Flip chip devices with flexible conductive adhesive
08/22/2000US6108190 Wafer holding device
08/22/2000US6108189 Electrostatic chuck having improved gas conduits
08/22/2000US6108126 Illuminating apparatus
08/22/2000US6108092 Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
08/22/2000US6108079 Method for measuring crystal defect and equipment using the same
08/22/2000US6108073 Electromagnetic wave detecting system
08/22/2000US6108026 Laser marking techniques
08/22/2000US6107874 Semiconductor integrated circuit device produced from master slice and having operation mode easily changeable after selection on master slice
08/22/2000US6107869 Semiconductor integrated circuit
08/22/2000US6107865 VSS switching scheme for battery backed-up semiconductor devices
08/22/2000US6107864 Charge pump circuit
08/22/2000US6107862 Charge pump circuit
08/22/2000US6107703 Linear motor mechanism for exposure apparatus, and device manufacturing method using the same
08/22/2000US6107689 Semiconductor device
08/22/2000US6107688 Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
08/22/2000US6107687 Semiconductor device having interconnection and adhesion layers
08/22/2000US6107686 Interlevel dielectric structure
08/22/2000US6107685 Semiconductor part and fabrication method thereof, and structure and method for mounting semiconductor part
08/22/2000US6107684 Semiconductor device having a signal pin with multiple connections
08/22/2000US6107682 Compliant wirebond packages having wire loop
08/22/2000US6107680 Packaging for bare dice employing EMR-sensitive adhesives
08/22/2000US6107676 Leadframe and a method of manufacturing a semiconductor device by use of it
08/22/2000US6107674 Isolated multi-chip devices
08/22/2000US6107672 Semiconductor device having a plurality of buried wells
08/22/2000US6107670 Contact structure of semiconductor device
08/22/2000US6107668 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same
08/22/2000US6107667 MOS transistor with low-k spacer to suppress capacitive coupling between gate and source/drain extensions
08/22/2000US6107666 High density ROM and a method of making the same
08/22/2000US6107665 Semiconductor device having a fixed state by injected impurity
08/22/2000US6107663 Circuit and method for gate-body structures in CMOS technology
08/22/2000US6107662 Thin film transistor and method for fabricating the same
08/22/2000US6107661 Semiconductor device and method of manufacturing same
08/22/2000US6107659 Nonvolatile semiconductor memory device operable at high speed with low power supply voltage while preventing overerasing/overwriting
08/22/2000US6107657 Semiconductor device having capacitor and manufacturing method thereof
08/22/2000US6107656 Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors
08/22/2000US6107654 Semiconductor device
08/22/2000US6107653 Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
08/22/2000US6107650 Insulated gate semiconductor device and manufacturing method thereof
08/22/2000US6107642 SRAM cell with thin film transistor using two polysilicon layers
08/22/2000US6107641 Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
08/22/2000US6107640 Semiconductor device for a thin film transistor
08/22/2000US6107639 Semiconductor device with rod like crystals and a recessed insulation layer
08/22/2000US6107638 Silicon nitride circuit substrate and semiconductor device containing same
08/22/2000US6107634 Decaborane vaporizer
08/22/2000US6107609 Thermal conditioning apparatus
08/22/2000US6107608 Temperature controlled spin chuck
08/22/2000US6107606 Method and apparatus for measuring temperatures during electronic package assembly
08/22/2000US6107215 Comprising first gas supply source for supplying hydrogen gas, second gas supply source for supplying nitrogen fluoride gas, tube-like chamber used for surface treatment of semiconductor layer by use of hydrogen gas and nitrogen gas
08/22/2000US6107214 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
08/22/2000US6107213 Method for making thin film semiconductor
08/22/2000US6107212 Method of and apparatus for manufacturing semiconductor devices
08/22/2000US6107211 Split polysilicon process in CMOS image integrated circuit
08/22/2000US6107210 Maskless method for fabricating a low-loss microwave power sensor device
08/22/2000US6107208 Nitride etch using N2 /Ar/CHF3 chemistry
08/22/2000US6107206 Method for etching shallow trenches in a semiconductor body
08/22/2000US6107205 Method for removing photoresist
08/22/2000US6107204 Method to manufacture multiple damascene by utilizing etch selectivity
08/22/2000US6107203 Chemical mechanical polishing system and method therefor
08/22/2000US6107202 Forming metal pattern on semiconductor structure, forming passivation layer over metal pattern and forming a keyhole in passivation layer, applying, exposing and developing a photoresist pattern, etching said passivation layer, stripping
08/22/2000US6107201 Aluminum spiking inspection method
08/22/2000US6107200 Forming a second tungsten film on a first tungsten film which is formed by using a reduction gas not containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film
08/22/2000US6107197 Carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical reaction of the chlorine radical with carbon atoms of the carbon contaminated layer to generate chlorine carbide
08/22/2000US6107196 Integrated circuit, and method for forming an integrated circuit
08/22/2000US6107195 Method for depositing a low-resistivity titanium-oxynitride (TiON) film that provides for good texture of a subsequently deposited conductor layer
08/22/2000US6107194 Improving device speed by using two silicides with two different compositions; one silicide is overlaid on a polysilicon gate layer to form a ?polycide? layer with improved sheet resistance, other is clad active areas