Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2000
09/12/2000US6117622 Controlled shrinkage of photoresist
09/12/2000US6117619 Low temperature anti-reflective coating for IC lithography
09/12/2000US6117618 Carbonized antireflective coating produced by spin-on polymer material
09/12/2000US6117617 Using a methanofullerene containing an oxygen-containing group and aryl and heterocyclic rings as the electron beam resist material; graphitization; high pattern resolution; semiconductors; highly resistant against dry etching
09/12/2000US6117600 Charged-particle-beam transfer methods utilizing high and low resolution sub-patterns
09/12/2000US6117598 Scanning exposure method with alignment during synchronous movement
09/12/2000US6117513 Semiconductor device and a lamination and fixing material used in the method of manufacture of the semiconductor device
09/12/2000US6117498 Single source thermal ablation method for depositing organic-inorganic hybrid films
09/12/2000US6117482 Forming dielectric film by vapor deposition
09/12/2000US6117481 Applying resins on substrates, slits, dropping and scanning
09/12/2000US6117402 Using after-cooler of which both inner surface facing single crystal and outer surface facing heat-shield plate have surface emissivity values larger than 0.6 disposed between single crystal being lifted and heat shield plate
09/12/2000US6117382 Method for encasing array packages
09/12/2000US6117351 Selectively removing a first dielectric layer silicon nitride and a second dielectric layer silicon oxide coverings with an acid solution at two different temperature
09/12/2000US6117350 Forming the etchant solutions by mixing first solutions which comprise ammonium fluoride, hydrofluoric acid, and water with second solutions which comprise hydrogen peroxide and water; for removing the damaged silicon layer
09/12/2000US6117349 Composite shadow ring equipped with a sacrificial inner ring
09/12/2000US6117348 Real time monitoring of plasma etching process
09/12/2000US6117347 Method of separating wafers into individual die
09/12/2000US6117345 Laminating two antireflective coatings on the wiring line layer, masking, etching to form wiring lines separated by gaps, and depositing a dielectric material within the gaps to fill the gaps
09/12/2000US6117299 Methods of electroplating solder bumps of uniform height on integrated circuit substrates
09/12/2000US6117279 Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
09/12/2000US6117268 Apparatus for carrying substrates processed in an etching process and protecting thereof from being dampened by droplets
09/12/2000US6117266 Furnace for continuous, high throughput diffusion processes from various diffusion sources
09/12/2000US6117246 Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck
09/12/2000US6117245 Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
09/12/2000US6117232 Crystallization control method for organic compound and crystallization control solid-state component employed therefor
09/12/2000US6117193 Attaching a fixture to the lens for joining the package of the detector array to the lens, finding the absolute locations of the plane, the center, and the horizontal and vertical axes of the sensor
09/12/2000US6117000 Polishing pad for a semiconductor substrate
09/12/2000US6116993 Chemicomechanical polishing device for a semiconductor wafer
09/12/2000US6116986 Drainage structure in polishing plant and method of polishing using structure
09/12/2000US6116848 Apparatus and method for high-speed transfer and centering of wafer substrates
09/12/2000US6116841 Substrate transferring apparatus and substrate processing apparatus using the same
09/12/2000US6116493 Flip-chip bonding parts, flip-chip bonding confirmation parts and a flip-chip bonding method
09/12/2000US6116490 Bonding apparatus
09/12/2000US6116487 Method and apparatus for sweeping overflowed resin on semiconductor device manufacturing process
09/12/2000US6116427 Tray for ball grid array devices
09/12/2000US6116416 Magnetic hard disk transportation system and method
09/12/2000US6116254 Cleaning method and system of semiconductor substrate and production method of cleaning solution
09/12/2000US6116187 Thin film forming apparatus
09/12/2000US6116185 Gas injector for plasma enhanced chemical vapor deposition
09/12/2000US6116184 Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size
09/12/2000US6115910 Misregistration fidutial
09/12/2000US6115867 Apparatus for cleaning both sides of substrate
09/08/2000WO2000052764A1 Electrochemical deposit from cuscn in porous tio2 films
09/08/2000WO2000052760A1 Trench dmos transistor structure having a low resistance path to a drain contact located on an upper surface
09/08/2000WO2000052757A1 Semiconductor device
09/08/2000WO2000052756A1 A controlled collapse chip connection (c4) integrated circuit package which has two dissimilar underfill materials
09/08/2000WO2000052754A1 Integrated circuit and method of manufacture thereof
09/08/2000WO2000052752A2 A process for underfilling flip-chip integrated circuit package with an underfill material that is heated to a partial gel state
09/08/2000WO2000052751A1 A process line for underfilling a controlled collapse chip connection (c4) integrated circuit package
09/08/2000WO2000052750A2 Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor
09/08/2000WO2000052749A1 Method for enhancing etching of titanium silicide
09/08/2000WO2000052748A1 Method for improving thermal process steps
09/08/2000WO2000052747A1 Method and system to uniformly etch substrates using an etching composition comprising a fluoride ion source and a hydrogen ion source
09/08/2000WO2000052746A1 A system and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication
09/08/2000WO2000052745A1 Etching of semiconductor wafer edges
09/08/2000WO2000052743A1 Method for improving the resistance degradation of thin film capacitors
09/08/2000WO2000052742A1 Epitaxially grown p-type diffusion source for photodiode fabrication
09/08/2000WO2000052741A1 Pressure equalization system for chemical vapor deposition reactors
09/08/2000WO2000052740A1 Gas delivery system
09/08/2000WO2000052739A2 A controlled collapse chip connection (c4) integrated circuit package that has a filler which seals an underfill material
09/08/2000WO2000052738A2 Method for producing highly doped semiconductor components
09/08/2000WO2000052734A1 Method and apparatus for ionized physical vapor deposition
09/08/2000WO2000052717A1 Amorphous barrier layer in a ferroelectric memory cell
09/08/2000WO2000052701A1 Storage cell arrangement and method for producing the same
09/08/2000WO2000052488A1 Distributed interface for parallel testing of multiple devices using a single tester channel
09/08/2000WO2000052484A2 Interface independent test system
09/08/2000WO2000052420A1 Method and system of measuring waviness in silicon wafers
09/08/2000WO2000052236A1 Silicon wafer
09/08/2000WO2000052235A1 Method for producing silicon single crystal
09/08/2000WO2000052234A1 Semiconductor wafer comprising a thin epitaxial silicon layer and method for producing same
09/08/2000WO2000052109A1 Electronic tag assembly and method therefor
09/08/2000WO2000051938A1 Chlorotrifluorine gas generator system
09/08/2000WO2000051937A1 Gas generation system
09/08/2000WO2000051921A1 Material handling and transport system and process
09/08/2000WO2000051920A1 Robot to remove a substrate carrier door
09/08/2000WO2000051782A1 Apparatus and method for chemical-mechanical polishing (cmp) using a head having direct pneumatic wafer polishing pressure system
09/08/2000WO2000051753A1 Semiconductor wafer treatment
09/08/2000WO2000051752A1 Cleaning sponge roller
09/08/2000WO2000051748A1 Device and method for applying adhesive material onto planar components and the use thereof
09/08/2000WO2000031776A3 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
09/08/2000WO2000029636A3 High purity tantalum targets for sputtering
09/08/2000WO2000024049A9 Method of oxidizing a substrate in the presence of nitride and oxynitride films
09/08/2000WO2000020900A3 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
09/08/2000WO2000016163A3 Method and apparatus for developing photoresist patterns
09/08/2000WO2000014795A9 Complementary bipolar/cmos epitaxial structure and process
09/08/2000WO2000013211A3 Silicon on insulator structure from low defect density single crystal silicon
09/08/2000WO2000011712A9 Method and structure for improved alignment tolerance in multiple, singularized plugs
09/08/2000WO2000002803A9 Dual arm substrate handling robot with a batch loader
09/08/2000EP1050071A3 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
09/08/2000CA2365840A1 Amorphous barrier layer in a ferroelectric memory cell
09/07/2000DE4138731C2 Belichtungsvorrichtung Exposure apparatus
09/07/2000DE19910155A1 Festkörperbauelement, seine Verwendung und Verfahren zu seiner Herstellung The solid state device, its use and process for its production
09/07/2000DE19909170A1 Bond wire feeder mechanism for bond wire of diameter below 100 microns for connection of contact pads on semiconductor and support elements
09/07/2000DE19908809A1 Method of manufacturing MOS transistor structure with enhanced body conductivity
09/07/2000DE19908474A1 Mounting semiconductor chip on substrate layer
09/07/2000DE19908428A1 Halbleiterspeicheranordnung mit Bitleitungs-Twist A semiconductor memory device with bit line twist
09/07/2000DE19908400A1 Verfahren zur Herstellung hochdotierter Halbleiterbauelemente A process for producing highly doped semiconductor components
09/07/2000DE19908188A1 Integrated electronic circuit manufacturing method
09/07/2000DE19908186A1 Verfahren zur Herstellung eines integrierten Schaltkreises A process for producing an integrated circuit
09/07/2000DE19907276A1 Producing solder connection between electrical/electronic component and carrier substrate involves solder coating of pure tin with thickness of less than 10 microns applied to metal pad
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