Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2000
11/02/2000WO2000043573A8 Passivating etchants for metallic particles
11/02/2000WO2000041221A3 Method and device for shaping surfaces of semiconductors
11/02/2000WO2000033622A9 Improved heat sink and process of manufacture
11/02/2000WO2000028579A9 Method and apparatus for cleaning the edge of a thin disc
11/02/2000WO2000028578A9 Improved megasonic cleaner
11/02/2000WO2000018980A9 An in-line sputter deposition system
11/02/2000WO1999067808A9 High sputter, etch resistant window for plasma processing chambers
11/02/2000EP1049356A2 Heating apparatus for semiconductor wafers or substrates
11/02/2000EP1049253A2 Surface acoustic wave device having bump electrodes and method for producing the same
11/02/2000EP1049191A2 Procedure for the production of electronical elements with strip lines
11/02/2000EP1049179A2 Chip-type semiconductor light emitting device
11/02/2000EP1049176A2 Electronic device and electronic apparatus
11/02/2000EP1049174A2 Power MOS device with increased channel width and process for forming same
11/02/2000EP1049173A1 Semiconductor devices with multiple power supplies and methods of manufacturing such devices
11/02/2000EP1049172A2 A SOI structure semiconductor device and a fabrication method thereof
11/02/2000EP1049168A2 Semiconductor device
11/02/2000EP1049167A2 Semiconductor device and manufacturing method thereof
11/02/2000EP1049166A2 CMOS inverter and standard cell using the same
11/02/2000EP1049165A1 Integrated circuit structure comprising a power circuit portion and a control circuit portion, without parasitic currents
11/02/2000EP1049164A1 High laser absorption copper fuse and method for making the same
11/02/2000EP1049160A1 New contact shape for giga scale borderless contacts and method for making the same
11/02/2000EP1049159A2 A method of forming dual thickness gate oxide in a semiconductor device
11/02/2000EP1049158A2 Semiconductor interconnect structure
11/02/2000EP1049157A1 Process for manufacturing buried channels and cavities in semiconductor wafers
11/02/2000EP1049156A1 Manufacturing process of integrated SOI circuit structures
11/02/2000EP1049155A1 Process for manufacturing a SOI wafer with buried oxide regions without cusps
11/02/2000EP1049154A2 Process for forming device isolation region
11/02/2000EP1049153A2 Yield prediction and statistical process control using predicted defect related yield loss
11/02/2000EP1049151A2 Method of producing a ball grid array type printed wiring board having excellent heat diffusibility and printed wiring board
11/02/2000EP1049150A1 Method and structure for bonding layers in a semiconductor device
11/02/2000EP1049149A2 Multi-phase lead germanate film and deposition method
11/02/2000EP1049148A2 C-axis oriented lead germanate film and deposition method
11/02/2000EP1049147A2 Epitaxially grown lead germanate film
11/02/2000EP1049146A2 Method and apparatus for forming an inlaid capacitor in a semiconductor wafer
11/02/2000EP1049145A1 Semiconductor wafer and production method therefor
11/02/2000EP1049144A1 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
11/02/2000EP1049143A2 Etching method
11/02/2000EP1049142A1 Method and device for removing photoresist film
11/02/2000EP1049141A1 Novel detergent and cleaning method using it
11/02/2000EP1049140A1 Apparatus and method for mounting semiconductor chips on a substrate
11/02/2000EP1049139A2 Semiconductor substrate cleaning system
11/02/2000EP1049138A2 Tray for semiconductor integrated circuit device
11/02/2000EP1049137A2 Identification structure of a substrate storage container and method of identifying a substrate storage container
11/02/2000EP1049133A2 Enhancing adhesion of deposits on exposed surfaces in process chamber
11/02/2000EP1049102A2 Non-volatile semiconductor memory device
11/02/2000EP1049017A1 Semiconductor memory device with redundancy
11/02/2000EP1048986A1 Compositions for stripping photoresists in the manufacture of integrated circuits
11/02/2000EP1048984A2 Method and apparatus for reducing non-uniformities in the manufacture of semiconductive devices
11/02/2000EP1048980A1 Bottom resist
11/02/2000EP1048957A2 Integrated circuit device having process parameter measuring circuit
11/02/2000EP1048956A2 Method and apparatus for analizing a semiconductor wafer manufacturing process
11/02/2000EP1048756A1 Substrate plating device
11/02/2000EP1048747A1 Process and apparatus for treating a material with electromagnetic radiation under a controlled atmosphere
11/02/2000EP1048408A2 Carrier head with a compressible film
11/02/2000EP1048407A2 A carrier head with a substrate sensor
11/02/2000EP1048406A2 A carrier head for chemical mechanical polishing a substrate
11/02/2000EP1048403A2 Improvements in and relating to grinding machines
11/02/2000EP1048082A1 Circuitry with at least one capacitor and process for producing the same
11/02/2000EP1048080A1 Semiconductor device
11/02/2000EP1048079A1 Silicon on insulator high-voltage switch
11/02/2000EP1048078A1 Lateral bipolar transistor and method of making same.
11/02/2000EP1048077A1 Power transistor device
11/02/2000EP1048076A1 Low trigger and holding voltage scr device for esd protection
11/02/2000EP1048072A1 Gettering device for ion capture
11/02/2000EP1048071A1 Integrated circuit rewiring using gas-assisted fib etching
11/02/2000EP1048070A1 System for receiving and retaining a substrate
11/02/2000EP1048069A1 Method for connecting electronic components to a substrate, and a method for checking such a connection
11/02/2000EP1048068A2 Method of manufacturing a semiconductor device with a field effect transistor
11/02/2000EP1048067A1 Thin film transistors and their manufacture
11/02/2000EP1048066A1 Method of manufacturing a semiconductor device with a bipolar transistor
11/02/2000EP1048065A2 Method of manufacturing a semiconductor device with a bipolar transistor
11/02/2000EP1048064A1 Etching methods for anisotropic platinum profile
11/02/2000EP1048063A1 Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
11/02/2000EP1048062A1 Metallization process and apparatus
11/02/2000EP1048061A1 Double-pulse laser crystallisation of thin semiconductor films
11/02/2000EP1048060A1 Semiconductor body having a surface provided with a coil having a magnetic core
11/02/2000EP1048059A1 Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor
11/02/2000EP1048058A1 Device for carrying out wet treatment of substrates
11/02/2000EP1048057A1 Wafer aligner in center of front end frame of vacuum system
11/02/2000EP1048056A1 A single step electroplating process for interconnect via fill and metal line patterning
11/02/2000EP1047808A1 Method of cleaning a cvd cold-wall chamber and exhaust lines
11/02/2000EP1047807A1 Substituted phenylethylene precursor deposition method
11/02/2000EP1047744A1 Curable epoxy-based compositions
11/02/2000EP1011919A4 Improved polishing pads and methods relating thereto
11/02/2000EP0990059A4 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
11/02/2000EP0970514A4 A method of producing thin silicon films
11/02/2000EP0722619B1 Varactor diode having a stepped capacitance-voltage profile
11/02/2000EP0721659B1 Method of forming a patterned array of uniform metal microbeads
11/02/2000EP0688650B1 Method of resin-sealing semiconductor devices
11/02/2000DE19961135A1 Voltage detection circuit for use in semiconductor memory component, includes compensation current generation section for preventing potential of signalling line VPP from rising steeply
11/02/2000DE19919905A1 Ohmic contacted semiconductor device, especially a silicon carbide power electronic or optoelectronic device, comprises a silicide and carbide junction formed from components of a silicon carbide region and an adjoining ohmic contact layer
11/02/2000DE19919902A1 Verfahren zur Herstellung eines Waferträgers, der insbesondere in einem Hochtemperatur-CVD-Reaktor bzw. bei einem Hochtemperatur-CVD-Verfahren unter Einsatz agressiver Gase Verwendung findet A method of manufacturing a wafer carrier, which is used in particular in a high temperature-CVD reactor or in a high-temperature CVD method using aggressive gases
11/02/2000DE19919610A1 In-situ photo lacquer removal after etching, especially in CMOS photosensor production, is carried out by plasma removal in the etching unit and then residue removal with a solvent
11/02/2000DE19919469A1 Verfahren zum Plasmaätzen von Silizium A method for plasma etching of silicon
11/02/2000DE19918966A1 Overcurrent protection method for insulated gate bipolar transistor (IGBT) in static converter of electric drive, monitors, reduces and adjusts cathode voltage in such a way that transistor is switched off when threshold value is exceeded
11/02/2000DE19918671A1 Vertikal integrierbare Schaltung und Verfahren zu ihrer Herstellung Vertically integrated circuit, and processes for their preparation
11/02/2000DE19917589C1 Halbleiterspeicher vom wahlfreien Zugriffstyp Semiconductor memory of the random access type
11/02/2000DE19917586A1 Anordnung zur Durchführung von Burn-In-Behandlungen von Halbleitervorrichtungen auf Waferebene An arrangement for carrying out burn-in processing of semiconductor devices at the wafer level
11/02/2000DE19914696A1 Gerät zur schnellen Messung winkelabhängiger Beugungseffekte an feinstrukturierten Oberflächen Instrument for fast measurement of angle-dependent diffraction effects of finely structured surfaces
11/02/2000DE10020347A1 Grinding apparatus for shaping spherical objects e.g. of semiconductor material conveys objects in holes on endless belt past grinding belt