Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2000
11/16/2000WO2000042534A3 Method and arrangement for verifying the layout of an integrated circuit with the aid of a computer and use thereof in the production of an integrated circuit
11/16/2000WO2000039838A3 Method for igniting a plasma inside a plasma processing reactor
11/16/2000WO2000034999A3 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
11/16/2000WO2000034991A3 Method of producing a metal oxide film or a structured metal oxide film
11/16/2000WO2000034987A3 Apparatus and methods for handling a substrate
11/16/2000WO2000033386A3 Trench-gate semiconductor devices and their manufacture
11/16/2000WO2000033359A3 Specimen holding robotic arm end effector
11/16/2000WO2000029894B1 Laser scanning system mirror
11/16/2000WO2000026974A3 Semiconductor processing chamber calibration tool
11/16/2000WO2000021126A9 Semiconductor copper bond pad surface protection
11/16/2000WO2000020879A9 Imaging using spatial frequency filtering and masking
11/16/2000WO2000019493A3 Wafer load lock with internal wafer transport
11/16/2000WO2000019492A3 Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system
11/16/2000WO2000017919A3 Method for producing an ohmic contact
11/16/2000DE4345276C2 Flash EEPROM preventing excessive erasure
11/16/2000DE19949976C1 In-situ end-point detection process, for chemical-mechanical polishing of semiconductor wafer layers, uses an ion-selective electrode to monitor ion concentration changes in a polishing slurry and reagent solution mixture
11/16/2000DE19942281A1 Projection lens has system filter screen, constrictions and bulges, negative lens, and positive lenses
11/16/2000DE19926107C1 Semiconductor structure, especially a memory including redundant memory cells or word lines, has a vertical fuse embedded in a cavity of a semiconductor body
11/16/2000DE19922257A1 Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching
11/16/2000DE19922167A1 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer
11/16/2000DE19921246A1 Anlage zur Fertigung von Halbleiterprodukten Plant for the manufacture of semiconductor products
11/16/2000DE19921245A1 Anlage zur Bearbeitung von Wafern Plant for the processing of wafers
11/16/2000DE19921244A1 Anlage zur Bearbeitung von Wafern Plant for the processing of wafers
11/16/2000DE19921243A1 Anlage zur Bearbeitung von Wafern Plant for the processing of wafers
11/16/2000DE19921190A1 Verfahren zur Herstellung eines Elements mit porosidiertem Material A process for producing an element with porosidiertem material
11/16/2000DE19921177A1 Ultraschall-Drahtbondeinrichtung Ultrasonic wire bonder
11/16/2000DE19920333A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
11/16/2000DE19920252A1 Device for thermally treating substrates, e.g. for re-melting solder bumps onto micro-chips, has heating and cooling device containing re-melting reservoir filled with fluid
11/16/2000DE19823943C2 Schaltungsanordnung für Burn-In-Systeme zum Testen von Bausteinen mittels eines Boards Circuit arrangement for burn-in systems for testing devices using a board
11/16/2000DE19549487C2 Wet chemical treatment installation for substrate plates
11/16/2000DE10022224A1 Deponiervorrichtung A depository
11/16/2000DE10021385A1 Production of a capacitor in an integrated circuit comprises using a multi-step process keeping chemical-mechanical polishing process steps to a minimum
11/16/2000DE10016938A1 Etching oxide layer on nitride layer, comprises preparing plasma derived from carbonaceous and fluorine-containing gas and gas containing nitrogen, and etching in plasma
11/16/2000DE10009876A1 Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle
11/16/2000CA2373149A1 Manufacturing electronic components in a direct-write process using precision spraying and laser irradiation
11/16/2000CA2371080A1 Heterogeneous programmable gate array
11/15/2000EP1052705A1 Method for fabricating a group III Nitride semiconductor device
11/15/2000EP1052701A2 Capacitor, semiconductor device, and manufacturing method thereof
11/15/2000EP1052700A1 Semiconductor TFT device and method of fabricating same
11/15/2000EP1052698A2 Interlayer dielectric for integrated circuit
11/15/2000EP1052695A2 Tape carrier and manufacturing method of tape carrier type semiconductor device
11/15/2000EP1052694A1 Semiconductor device having insulating film of fluorine-added carbon film and method of producing the same
11/15/2000EP1052693A2 Improved integrated-circuit isolation structure and method for forming the same
11/15/2000EP1052692A1 Container
11/15/2000EP1052691A2 Laser decapsulation apparatus and method
11/15/2000EP1052690A2 Process or forming MOS-gated devices having self-aligned trenches
11/15/2000EP1052689A1 Method for anisotropic etching of copper thin films with a beta-diketone, a beta-ketoimine, or a breakdown product thereof
11/15/2000EP1052688A1 Method and apparatus for processing wafer
11/15/2000EP1052687A1 Soi substrate and method for manufacturing the same
11/15/2000EP1052686A2 Oxidation of silicon using fluorine implants
11/15/2000EP1052685A2 Integrated circuit device having a fluorine implanted oxide layer
11/15/2000EP1052684A1 A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
11/15/2000EP1052682A1 Device and process for the liquid treatment of disk-shaped objects
11/15/2000EP1052681A2 A method and apparatus for processing wafers
11/15/2000EP1052678A2 Electron guns for lithography tools
11/15/2000EP1052677A2 Electron emitters for lithography tools
11/15/2000EP1052676A2 System and method for cleaning contaminated surfaces in an ion implanter
11/15/2000EP1052545A2 Projection exposure apparatus and exposure method for microlithography
11/15/2000EP1052466A1 Pfc type gas recovery method and device
11/15/2000EP1052419A2 Apparatus for reducing distortion in fluidbearing surfaces
11/15/2000EP1052313A1 Silicon wafer and method of manufacture thereof
11/15/2000EP1052309A2 Apparatus for fabrication of thin films
11/15/2000EP1052064A2 Chemical mechanical polishing with friction-based control
11/15/2000EP1052063A1 System for chemical mechanical planarization
11/15/2000EP1052062A1 Pré-conditioning fixed abrasive articles
11/15/2000EP1052061A2 System for chemical mechanical planarization
11/15/2000EP1052060A2 Method for chemical mechanical planarization
11/15/2000EP1052059A2 Method for chemical mechanical planarization
11/15/2000EP1051762A1 X-y addressable electric microswitch arrays and sensor matrices employing them
11/15/2000EP1051754A1 A field-effect transistor
11/15/2000EP1051751A2 Test head structure for integrated circuit tester
11/15/2000EP1051750A1 An integrated circuit device
11/15/2000EP1051745A1 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
11/15/2000EP1051744A1 Method of forming a semiconductor device
11/15/2000EP1051743A1 Method of rapid thermal processing (rtp) of ion implanted silicon
11/15/2000EP1051742A1 Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing
11/15/2000EP1051741A1 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
11/15/2000EP1051740A1 Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers
11/15/2000EP1051739A1 Compliant substrate in particular for deposit by hetero-epitaxy
11/15/2000EP1051738A2 Fabrication of organic semiconductor devices using ink jet printing
11/15/2000EP1051737A2 METHOD FOR PRODUCING A STRUCTURE SUCH AS AN INSULATOR SEMICONDUCTOR AND IN PARTICULAR SiCOI
11/15/2000EP1051711A1 Semiconductor device comprising a non-volatile memory which is erasable by means of uv irradiation
11/15/2000EP1051544A2 Process chamber and method for depositing and/or removing material on a substrate
11/15/2000EP1051535A2 SUBSTRATE SUPPORT FOR SiC EPITAXY AND METHOD FOR PRODUCING AN INSERT FOR A SUSCEPTOR
11/15/2000EP1051363A1 Quartz glass jig having large irregularities on the surface and method for producing the same
11/15/2000EP1051342A1 Apparatus and method for transporting substrates
11/15/2000EP0948812A4 Surface connectable semiconductor bridge elements, devices and methods
11/15/2000EP0919015B1 Process and device for applying a photoresist lacquer on uneven base body surfaces
11/15/2000EP0854964A4 Vacuum actuated mechanical latch
11/15/2000EP0752132B1 Cell-based defect tolerant architecture with beneficial use of unassigned spare cells
11/15/2000CN1273696A Ferroelectric memory and method of producing the same
11/15/2000CN1273695A Semiconductor device, method of manufacture thereof, circuit board and electronic device
11/15/2000CN1273694A Semiconductor device, method of manufacture thereof circuit board and electronic device
11/15/2000CN1273693A Method of forming singl-crystal silicon layer and method of manufacturing semiconductor device
11/15/2000CN1273673A Memory cell arrangement
11/15/2000CN1273543A Method for producing cooling element and cooling element
11/15/2000CN1273436A Method for manufacturing thin film transistor and thin film transistor
11/15/2000CN1273435A Method for manufacturing cylindrical condensor bottom electrode
11/15/2000CN1273434A Method for automatically aligning grid cap to grid foot of T-shaped grid of smeicondctor device
11/15/2000CN1273251A Novel phenol kind resin and photoresist composite containing the resin
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