Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2000
10/24/2000US6136688 High stress oxide to eliminate BPSG/SiN cracking
10/24/2000US6136687 Method of forming air gaps for reducing interconnect capacitance
10/24/2000US6136686 Fabrication of interconnects with two different thicknesses
10/24/2000US6136685 High deposition rate recipe for low dielectric constant films
10/24/2000US6136684 Control growing on a porous silicon layer a nonporous monocrystalline silicon layer in an atmosphere containing silicon source gas and hydrogen gas
10/24/2000US6136683 Semiconductor device and method for production thereof
10/24/2000US6136682 Method for forming a conductive structure having a composite or amorphous barrier layer
10/24/2000US6136681 Tool used in forming a chip scale package
10/24/2000US6136680 Methods to improve copper-fluorinated silica glass interconnects
10/24/2000US6136679 Gate micro-patterning process
10/24/2000US6136678 Method of processing a conductive layer and forming a semiconductor device
10/24/2000US6136677 Forming a transition region separator between the logic area and the memory area; sequential steps forming silicide junctions in the logic area and implanted junctions in the memory area
10/24/2000US6136676 Semiconductor device manufacturing method
10/24/2000US6136675 Method for forming gate terminal
10/24/2000US6136674 Mosfet with gate plug using differential oxide growth
10/24/2000US6136673 Process utilizing selective TED effect when forming devices with shallow junctions
10/24/2000US6136672 Process for device fabrication using a high-energy boron implant
10/24/2000US6136671 Method for forming gate oxide layers
10/24/2000US6136670 Semiconductor processing methods of forming contacts between electrically conductive materials
10/24/2000US6136669 Mobile charge immune process
10/24/2000US6136668 Method of dicing semiconductor wafer
10/24/2000US6136667 Method for bonding two crystalline substrates together
10/24/2000US6136666 Reducing fabricating cost by making two silicon-on-insulator wafers out of three silicon substrates
10/24/2000US6136665 Method for forming a recess-free buffer layer
10/24/2000US6136664 Filling trench with multiple layers of silicon, oxidizing each layer of silicon before filling trench with next layer of silicon or after filling trench with last layer of silicon
10/24/2000US6136663 Method of etching silicon nitride
10/24/2000US6136661 Method to fabricate capacitor structures with very narrow features using silyated photoresist
10/24/2000US6136660 Stacked capacitator memory cell and method of fabrication
10/24/2000US6136659 Production process for a capacitor electrode formed of a platinum metal
10/24/2000US6136658 Method of fabricating a semiconductor device including a contact hole between gate electrode structures
10/24/2000US6136657 Method for fabricating a semiconductor device having different gate oxide layers
10/24/2000US6136656 Method to create a depleted poly MOSFET
10/24/2000US6136655 Method of making low voltage active body semiconductor device
10/24/2000US6136654 Method of forming thin silicon nitride or silicon oxynitride gate dielectrics
10/24/2000US6136653 Method and device for producing undercut gate for flash memory
10/24/2000US6136652 Preventing dielectric thickening over a channel area of a split-gate transistor
10/24/2000US6136651 Forming field oxide layer to contain bird beaks extending from each region and merging to protect portion of silicon substrate not covered by polysilicon layer from being etched
10/24/2000US6136650 Method of forming three-dimensional flash memory structure
10/24/2000US6136649 Method for removing anti-reflective coating layer using plasma etch process after contact CMP
10/24/2000US6136648 Forming isolation film by selectively oxidizing layer of film constituting floating gate to form oxide film
10/24/2000US6136647 Method of forming interpoly dielectric and gate oxide in a memory cell
10/24/2000US6136646 Method for manufacturing DRAM capacitor
10/24/2000US6136645 Fabrication method for semiconductor memory device
10/24/2000US6136644 Method of manufacturing a multi-pillared storage node using silylated photoresist
10/24/2000US6136643 Method for fabricating capacitor-over-bit-line dynamic random access memory (DRAM) using self-aligned contact etching technology
10/24/2000US6136642 Method of making a dynamic random access memory
10/24/2000US6136641 Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
10/24/2000US6136640 Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit
10/24/2000US6136639 Semiconductor memory device and method for fabricating the same
10/24/2000US6136638 Process technology architecture of embedded DRAM
10/24/2000US6136637 Method of forming CMOS circuitry including patterning conductive material overlying field isolation oxide
10/24/2000US6136636 Method of manufacturing deep sub-micron CMOS transistors
10/24/2000US6136635 Method for forming a bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
10/24/2000US6136634 Method of manufacturing semiconductor resistors
10/24/2000US6136633 Trench-free buried contact for locos isolation
10/24/2000US6136632 Forming semiconductor film used to form pixel thin-film transistors on surface of base substrate, conducting laser annealing process with line-shaped laser beam to melt and crystallize said semiconductor film
10/24/2000US6136628 Method for fabricating photodetector
10/24/2000US6136625 Method of manufacturing an active matrix panel
10/24/2000US6136624 Array substrate, liquid crystal display device and their manufacturing method
10/24/2000US6136618 Semiconductor device manufacturing process diagnosis system suitable for diagnoses of manufacturing process of logic LSI composed of a plurality of logic circuit blocks and diagnosis method thereof
10/24/2000US6136617 Alignment system for a spherical shaped device
10/24/2000US6136616 Method of forming semiconductor devices using gate electrode dimensions and dopant concentration for controlling drive current strength
10/24/2000US6136615 Migration from control wafer to product wafer particle checks
10/24/2000US6136614 Apparatus and method for manufacturing integrated circuit devices
10/24/2000US6136510 Accuracy of photolithographic processing, particularly in forming small diameter through holes and/or trenches in a dielectric layer, is improved by double-sided scrubbing the wafer prior to photolithography
10/24/2000US6136506 Epoxy resin obtained by extending chains of epoxy compound by an isocyanate compound having two isocyanate groups per molecule, an ultraviolet-curable resin having carboxyl group and an ethylenically unsaturated group, initiator
10/24/2000US6136505 Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film
10/24/2000US6136501 Polymers and photoresist compositions comprising same
10/24/2000US6136499 Radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups
10/24/2000US6136479 A portion of interconnection and/or contact hole pattern is covered with an absorption layer, exposing interconnection pattern and contact hole pattern to rays of different wavelength, wherein one ray is absorb by the absorption layer
10/24/2000US6136388 Substrate processing chamber with tunable impedance
10/24/2000US6136256 Method and apparatus for controlling dust particle agglomerates
10/24/2000US6136218 Used to reduce amount of metal ion contaminants left on wafer after chemical mechanical polishing completed
10/24/2000US6136214 Plasma processing method and apparatus
10/24/2000US6136213 Gas polishing method
10/24/2000US6136211 Placing substrate in process zone of chamber; introducing process gas comprising halogen-containing gas and one or more of nitrogen, hydrogen bromide, oxygen or helium-oxygen; generating plasma to etch; addng burst of cleaning gas
10/24/2000US6136168 Clean transfer method and apparatus therefor
10/24/2000US6136163 Apparatus for electro-chemical deposition with thermal anneal chamber
10/24/2000US6136159 Method for depositing metal
10/24/2000US6136141 Method and apparatus for the fabrication of lightweight semiconductor devices
10/24/2000US6136138 Method and apparatus for chemical mechanical polishing of a semiconductor wafer
10/24/2000US6136137 System and method for dicing semiconductor components
10/24/2000US6136128 Method of making an adhesive preform lid for electronic devices
10/24/2000US6136096 Method and apparatus for correcting defects in photomask
10/24/2000US6136095 Apparatus for filling apertures in a film layer on a semiconductor substrate
10/24/2000US6136093 Method of making GaN single crystal and apparatus for making GaN single crystal
10/24/2000US6136091 Process and apparatus for producing polycrystalline semiconductor ingot
10/24/2000US6136047 Having solder deposits on the surface non-wettable to molten solder, both diameter and spacing of which are smaller than diameter and spacing of the terminal pads on a semiconductor substrate
10/24/2000US6135868 Groove cleaning device for chemical-mechanical polishing
10/24/2000US6135863 Method of conditioning wafer polishing pads
10/24/2000US6135860 Fixture for mechanical grinding and inspection of failed or defective semiconductor devices
10/24/2000US6135858 Substrate holding device and polishing method and polishing apparatus using the same
10/24/2000US6135702 Apparatus for automated loading of wafer cassette
10/24/2000US6135699 IC transporting apparatus, IC posture altering apparatus and IC take-out apparatus
10/24/2000US6135698 Universal tool interface and/or workpiece transfer apparatus for SMIF and open pod applications
10/24/2000US6135460 Method of and apparatus for purifying reduced pressure process chambers
10/24/2000US6135433 Continuous gas saturation system and method
10/24/2000US6135341 Room temperature gold wire wedge bonding process
10/24/2000US6135339 Ultrasonic transducer with a flange for mounting on an ultrasonic welding device, in particular on a wire bonder
10/24/2000US6135338 Capillary holding structure for ultrasonic horn
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