Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2000
10/18/2000EP1044452A2 Programmable sub-surface aggregating metallization structure and method of making same
10/18/2000EP1044396A1 Method for continuous and maskless patterning of structured substrates
10/18/2000EP1044291A1 In situ growth of oxide and silicon layers
10/18/2000EP1044288A2 Method for forming a three-component nitride film containing metal and silicon
10/18/2000EP1044251A1 Ammonium borate containing compositions for stripping residues from semiconductor substrates
10/18/2000EP1044113A1 Plasma discharge device and method with dynamic tuning
10/18/2000EP1044074A1 Photoresist coating process control with solent vapor sensor
10/18/2000EP1044055A1 Throughflow gas storage and dispensing system
10/18/2000EP1008175A4 Capped interlayer dielectric for chemical mechanical polishing
10/18/2000EP0670054B1 Photomask blanks
10/18/2000CN2401992Y Plastic package structure for light sensed chip package
10/18/2000CN2401991Y Fully automatic multi-function silicon wafe corrosion machine
10/18/2000CN1270711A Electrical impedance matching system and method
10/18/2000CN1270701A Fluorometric method for increasing the efficiency of the rinsing and water recovery process in the manufacture of semiconductor chips
10/18/2000CN1270696A Memory location arrangement and its use as a magnetic ram and as an associative memory
10/18/2000CN1270684A System and method for monitoring and controlling gas plasma process
10/18/2000CN1270640A Device and method for detecting and preventing arcing in RF plasma systems
10/18/2000CN1270420A Semiconductor device made of Group III nitrogenous compounds and manufacture thereof
10/18/2000CN1270419A Process for preparing transparent conducting SnO2 film
10/18/2000CN1270418A Semiconductor device and manufacture thereof
10/18/2000CN1270417A Semiconductor device and manufacture thereof
10/18/2000CN1270416A Manufacture of semiconductor device
10/18/2000CN1270415A Etching technology for reducing corrosion of metal patterns of coated layer on substrate
10/18/2000CN1270414A Dutile dielectric material for semiconductor device
10/18/2000CN1270413A Method for forming copper wires in semiconductor device
10/18/2000CN1270089A Method for machining device and method for machining slide contacts
10/18/2000CN1057639C Method for manufacturing semiconductor element
10/18/2000CN1057638C Method and apparatus for removing an electronic component from a board
10/18/2000CN1057485C Method of spliting ceramic substrate and spliting device
10/17/2000US6134705 Generation of sub-netlists for use in incremental compilation
10/17/2000US6134611 System for interface circuit to control multiplexer to transfer data to one of two internal devices and transferring data between internal devices without multiplexer
10/17/2000US6134482 Method and apparatus for controlling semiconductor wafer fabrication equipment based on a remaining process time applicable to the processors
10/17/2000US6134385 Water free furnace tube with self-heating quartz plug
10/17/2000US6134144 Flash memory array
10/17/2000US6134139 Magnetic memory structure with improved half-select margin
10/17/2000US6134138 Method and apparatus for reading a magnetoresistive memory
10/17/2000US6134137 Rom-embedded-DRAM
10/17/2000US6134136 Semiconductor integrated circuit device
10/17/2000US6134118 Conductive epoxy flip-chip package and method
10/17/2000US6134096 Substrate, insulating dielectric layer and electrode between the two; object is attracted onto electrode via insulating dielectric layer, which utilizes a gas-introducing hole to form a gas-diffusing depression for uniform heat conduction
10/17/2000US6134008 Aligner and patterning method using phase shift mask
10/17/2000US6134007 Method for measuring orthogonality having a third interferometer which is not orthogonal
10/17/2000US6133987 Technique for reducing pattern placement error in projection electron-beam lithography
10/17/2000US6133986 Microlens scanner for microlithography and wide-field confocal microscopy
10/17/2000US6133982 Exposure apparatus
10/17/2000US6133981 Processing system
10/17/2000US6133978 Tape carrier package and liquid crystal display device
10/17/2000US6133807 High-frequency switch and integrated high-frequency switch array
10/17/2000US6133781 Semiconductor device utilizing unnecessary electric charge on complementary signal line pair
10/17/2000US6133745 Socket type module test apparatus and socket for the same
10/17/2000US6133727 Method for verifying semiconductor device tester
10/17/2000US6133726 Handling device
10/17/2000US6133725 Compensating for the effects of round-trip delay in automatic test equipment
10/17/2000US6133641 Semiconductor substrate and method of manufacturing semiconductor device
10/17/2000US6133640 Three-dimensional structure memory
10/17/2000US6133639 Compliant interface for semiconductor chip and method therefor
10/17/2000US6133637 Semiconductor device having a plurality of semiconductor chips
10/17/2000US6133636 Tantalum-aluminum-nitrogen material for semiconductor devices
10/17/2000US6133635 Process for making self-aligned conductive via structures
10/17/2000US6133633 Method for building interconnect structures by injection molded solder and structures built
10/17/2000US6133630 Condensed memory matrix
10/17/2000US6133629 Multi-chip module package
10/17/2000US6133628 Metal layer interconnects with improved performance characteristics
10/17/2000US6133627 Semiconductor chip package with center contacts
10/17/2000US6133625 Semiconductor device and method for manufacturing the same
10/17/2000US6133624 Semiconductor device utilizing a lead on chip structure
10/17/2000US6133623 Resin sealing type semiconductor device that includes a plurality of leads and method of making the same
10/17/2000US6133620 Semiconductor device and process for fabricating the same
10/17/2000US6133619 Reduction of silicon oxynitride film delamination in integrated circuit inter-level dielectrics
10/17/2000US6133618 Semiconductor device having an anti-reflective layer and a method of manufacture thereof
10/17/2000US6133613 Anti-reflection oxynitride film for tungsten-silicide substrates
10/17/2000US6133611 MOS semiconductor device
10/17/2000US6133610 Silicon-on-insulator chip having an isolation barrier for reliability and process of manufacture
10/17/2000US6133609 High-voltage thin-film transistor with sub-gate elements
10/17/2000US6133606 High voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes
10/17/2000US6133605 Semiconductor nonvolatile memory transistor and method of fabricating the same
10/17/2000US6133603 Memory device and memory array
10/17/2000US6133602 Method of reducing dielectric damage due to charging in the fabrication of stacked gate structures
10/17/2000US6133601 Non-volatile semiconductor memory device with inter-layer insulation film
10/17/2000US6133600 Memory device with improved domed capacitors
10/17/2000US6133599 Design and a novel process for formation of DRAM bit line and capacitor node contacts
10/17/2000US6133598 Semiconductor device with diagonal capacitor bit line and fabrication method thereof
10/17/2000US6133597 Biasing an integrated circuit well with a transistor electrode
10/17/2000US6133594 Compound semiconductor device
10/17/2000US6133590 Low resistance contact semiconductor diode
10/17/2000US6133587 Silicon carbide semiconductor device and process for manufacturing same
10/17/2000US6133586 Semiconductor memory device and method of fabricating the same
10/17/2000US6133585 Semiconductor device
10/17/2000US6133583 Semiconductor device and method for producing the same
10/17/2000US6133582 Methods and apparatuses for binning partially completed integrated circuits based upon test results
10/17/2000US6133577 Method and apparatus for producing extreme ultra-violet light for use in photolithography
10/17/2000US6133557 Base body made of an aluminum nitride(aln) with small amount of silicon, and a heating resistor embedded in base body made of a mixture of at least one of tungsten, molybdenum, titanium carbide and titanium nitride, and amount of aln
10/17/2000US6133550 Method and apparatus for thermal processing of semiconductor substrates
10/17/2000US6133521 Solar battery output section and its method of manufacture
10/17/2000US6133164 Ion implanting oxygen into first unmasked area of substrate where thick oxide layer is to be formed after thermal oxidation, changing mask and ion implanting nitrogen into second unmasked area where thin oxide film is to be formed
10/17/2000US6133163 Improving surface adhesion between coating layers by treating with plasma a heat-cured spun-on-glass (sog) coating prior to applying second coating
10/17/2000US6133162 Method of forming a film by using plasmanized process gas containing gaseous H2 O and an auxiliary gas in a semiconductor device
10/17/2000US6133161 Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
10/17/2000US6133160 Vapor deposition of dielectric undercoating on substrate by reaction of oxone-containing gas and first silicon-containing gas, then reforming by exposure to second silicon-containing gas
10/17/2000US6133159 Chemical vapor deposition of ruthenium oxide onto semiconductor substrate by vapor phase oxidation of (dienyl)ruthenium tricarbonyl complex with an oxidizing gas
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