Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2000
10/31/2000US6139977 Useful in packaging integrated circuit devices.
10/31/2000US6139975 Sheet metal member, method of manufacturing same, and heat radiation plate
10/31/2000US6139971 In order to improve adhesion between the platinum layer and the substrate, the structure has an intermediate layer of amorphous aluminum oxide.
10/31/2000US6139953 Adhesive tape, base material for adhesive tape and their manufacturing methods
10/31/2000US6139922 Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
10/31/2000US6139915 Cross-section sample staining method
10/31/2000US6139905 Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
10/31/2000US6139811 Crucible including an improved die/susceptor assembly for use in edge-defined film-fed growth (efg) of hollow crystals
10/31/2000US6139780 A cobalt or gallium or iron ions doped barium strontium titinate dielectrics stable to reducing atmosphere
10/31/2000US6139763 A mechanical chemical polishing agent consists of an abrasive, an oxidizer to oxidize tatalum, an oxalic acid reducing agent to reduce tantalum oxide to tantalum, and water
10/31/2000US6139712 Method of depositing metal layer
10/31/2000US6139702 Performed before etching a dielectric layer to expose a metal silicide layer.
10/31/2000US6139701 Copper target for sputter deposition
10/31/2000US6139700 Protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.
10/31/2000US6139699 Controlling particular process variables during deposition of the film.
10/31/2000US6139698 Maintaining consistently high quality deposited films regardless of chamber idle time.
10/31/2000US6139697 Low temperature integrated via and trench fill process and apparatus
10/31/2000US6139696 Method and apparatus for forming a layer on a substrate
10/31/2000US6139695 For fabrication of integrated circuits from silicon wafers, and particularly in the production of magnetic recording media.
10/31/2000US6139682 Processing apparatus for manufacturing semiconductors
10/31/2000US6139678 Plasma processing methods and apparatus
10/31/2000US6139676 Apparatus and method for removing semiconductor chips from a diced semiconductor wafer
10/31/2000US6139666 Method for producing ceramic surfaces with easily removable contact sheets
10/31/2000US6139647 Selective removal of vertical portions of a film
10/31/2000US6139645 Using marangoni effect
10/31/2000US6139643 Effusion cell for Si and molecular beam epitaxy system
10/31/2000US6139642 Substrate processing apparatus and method
10/31/2000US6139641 Substrate processing apparatus having a gas heating tube
10/31/2000US6139631 Crystal growth method and apparatus
10/31/2000US6139630 Suspender for polycrystalline material rods
10/31/2000US6139628 Method of forming gallium nitride crystal
10/31/2000US6139626 Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals
10/31/2000US6139624 Process for producing an electrical contact on a SIC surface
10/31/2000US6139591 Wafer separating and cleaning apparatus and process
10/31/2000US6139483 Method of forming lateral resonant tunneling devices
10/31/2000US6139409 Wafer polishing apparatus and backing pad for wafer polishing
10/31/2000US6139408 Surface grinding machine and carrier used therefor
10/31/2000US6139406 Combined slurry dispenser and rinse arm and method of operation
10/31/2000US6139304 Mold for injection molding encapsulation over small device on substrate
10/31/2000US6139251 Stepper alignment method and apparatus
10/31/2000US6139245 Robot arm relocation system
10/31/2000US6139243 Method and system for flipping a tray of parts
10/31/2000US6139239 System for transferring wafers from cassettes to furnaces and method
10/31/2000US6139155 Projector display device
10/31/2000US6139079 Universal transport apparatus
10/31/2000US6138894 Method for coupling a circuit component to a substrate
10/31/2000US6138891 Non-conductive and self-leveling leadframe clamp insert for wirebonding integrated circuits
10/31/2000US6138824 Hard disk carrier
10/31/2000US6138748 Interleaved-fin thermal connector
10/31/2000US6138745 Two-stage sealing system for thermally conductive chuck
10/31/2000US6138721 Tilt and go load port interface alignment system
10/31/2000US6138698 Ultrasonic cleaning apparatus
10/31/2000US6138695 Substrate processing apparatus
10/31/2000US6138694 Multiple stage wet processing platform and method of use
10/31/2000US6138690 Method and an apparatus for the wet treatment of a semiconductor wafer
10/31/2000US6138659 Method of preparing end faces on integrated circuits
10/31/2000US6138612 Slow pull dryer which can smoothly remove particles floating over the surface of its hot water tank
10/31/2000US6138606 Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility
10/31/2000US6138494 Robot calibration tool and method
10/31/2000US6138489 Method of making a heat transfer device
10/31/2000US6138352 Method of manufacturing an extruded, tiered high fin density heat sink
10/31/2000US6138349 Protective coating for an electronic device
10/31/2000US6138348 Method of forming electrically conductive polymer interconnects on electrical substrates
10/31/2000CA2107676C A single transistor non-volatile electrically alterable semiconductor memory device
10/26/2000WO2000064227A1 Method of manufacturing method of ceramic multilayer board
10/26/2000WO2000064226A1 Ceramic circuit board and method of manufacture thereof
10/26/2000WO2000063971A1 Device for protecting against electrostatic discharge
10/26/2000WO2000063967A1 Heat sink base, heat sink, and method of manufacturing heat sink
10/26/2000WO2000063966A2 Method for planarized deposition of a material
10/26/2000WO2000063965A1 Treatment method of cleaved film for the manufacture of substrates
10/26/2000WO2000063964A2 Cmos process
10/26/2000WO2000063963A1 Non-abrasive conditioning for polishing pads
10/26/2000WO2000063962A1 Device and method for evaluating reliability of metallic interconnection and recorded medium on which evaluation of reliability of metallic interconnection is recorded
10/26/2000WO2000063961A1 Dual process semiconductor heterostructures and methods
10/26/2000WO2000063960A1 Process for etching a silicon layer in a plasma processing chamber to form deep openings
10/26/2000WO2000063959A1 METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMs IN IC MANUFACTURING
10/26/2000WO2000063958A1 In situ, controlled ambient deposition of ono for application to flash eprom
10/26/2000WO2000063957A1 Method of forming a thin film
10/26/2000WO2000063955A1 Plasma processing apparatus
10/26/2000WO2000063954A1 Surface finishing of soi substrates using an epi process
10/26/2000WO2000063953A1 Method of manufacturing semiconductor device and manufacturing line thereof
10/26/2000WO2000063952A1 Silicon fixtures for wafer processing and method of fabrication
10/26/2000WO2000063951A1 Apparatus for processing material at controlled temperatures
10/26/2000WO2000063947A1 Temperature controller for plasma processing
10/26/2000WO2000063836A1 Integrated circuit device which is secured against attacks resulting from controlled destruction of an additional layer
10/26/2000WO2000063467A1 Silicon epitaxial wafer and its manufacturing method
10/26/2000WO2000063461A1 Novel organocuprous precursors for chemical vapor deposition of a copper film
10/26/2000WO2000062977A1 Method of conditioning wafer polishing pads
10/26/2000WO2000062917A1 Decompression tank
10/26/2000WO2000062903A1 Organic acid scrubber & methods
10/26/2000WO2000031775A3 A method of manufacturing an electronic device comprising two layers of organic-containing material
10/26/2000WO2000022197A9 Epitaxial silicon wafers substantially free of grown-in defects
10/26/2000WO1999059928A3 Substrate transfer shuttle
10/26/2000DE19962784A1 Organisches, nicht reflektierendes Beschichtungsmaterial und dessen Herstellung Organic, non-reflective coating material and its preparation
10/26/2000DE19960234A1 Diode manufacturing method, has buried p semiconductor barrier which is provided at head surface of semiconductor substrate.
10/26/2000DE19953843A1 Verfahren zur Herstellung einer Kupferverdrahtung für eine Halbleitervorrichtung A process for producing a copper wiring for a semiconductor device
10/26/2000DE19953178A1 Millimeter band semiconductor circuit for microwave transmission and radar systems, has field effect transistor switching element between transmission line and earth
10/26/2000DE19936606C1 Integrated circuit voltage supply via pad e.g. for microprocessors and microcontrollers
10/26/2000DE19929210C1 Substrate used as a SOI substrate comprises a layer of monocrystalline silicon, a silicon dioxide layer and a silicon substrate
10/26/2000DE19916923A1 Vorrichtung zum berührungslosen senkrechten Transportieren von Bauteilen A device for the contactless vertical transporting of components