Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2000
11/14/2000US6146974 Method of fabricating shallow trench isolation (STI)
11/14/2000US6146973 High density isolation using an implant as a polish stop
11/14/2000US6146972 Method for fabricating semiconductor device
11/14/2000US6146971 Process for forming a shallow trench isolation structure
11/14/2000US6146970 Capped shallow trench isolation and method of formation
11/14/2000US6146968 Method for forming a crown capacitor
11/14/2000US6146967 Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG
11/14/2000US6146966 Process for forming a capacitor incorporated in a semiconductor device
11/14/2000US6146965 Methods of forming integrated circuit capacitors using mask patterns having constricted neck regions
11/14/2000US6146964 Method of manufacturing a semiconductor device having a fin type capacitor electrode
11/14/2000US6146963 Methods for forming ferroelectric capacitors having a bottom electrode with decreased leakage current
11/14/2000US6146962 Using a layer of polysilicon as an etch stop rather than the layer of nitride that is conventionally used.
11/14/2000US6146961 Processing methods of forming a capacitor
11/14/2000US6146960 Method of forming mixed mode devices
11/14/2000US6146959 Method of forming capacitors containing tantalum
11/14/2000US6146958 Methods for making VLSI capacitors and high Q VLSI inductors using metal-filled via plugs
11/14/2000US6146957 Method of manufacturing a semiconductor device having a buried region with higher impurity concentration
11/14/2000US6146956 PNP lateral bipolar electronic device and corresponding manufacturing process
11/14/2000US6146955 Method for forming dynamic random access memory device with an ultra-short channel and an ultra-shallow junction
11/14/2000US6146954 Minimizing transistor size in integrated circuits
11/14/2000US6146953 Fabrication method for mosfet device
11/14/2000US6146952 Semiconductor device having self-aligned asymmetric source/drain regions and method of fabrication thereof
11/14/2000US6146951 Method of manufacturing semiconductor device for preventing electrostatic discharge
11/14/2000US6146950 Method of manufacturing multiple metallic layered embedded ROM
11/14/2000US6146949 Method of manufacturing mask ROM devices with self-aligned coding implant
11/14/2000US6146948 Method for manufacturing a thin oxide for use in semiconductor integrated circuits
11/14/2000US6146947 Insulated gate type field effect transistor and method of manufacturing the same
11/14/2000US6146946 Method of fabricating a flash memory
11/14/2000US6146945 Method for manufacturing a semiconductor device
11/14/2000US6146944 Large angle implantation to prevent field turn-on under select gate transistor field oxide region for non-volatile memory devices
11/14/2000US6146943 Method for fabricating nonvolatile memory device
11/14/2000US6146942 Method of manufacturing a semiconductor memory device
11/14/2000US6146941 Method for fabricating a capacitor in a semiconductor device
11/14/2000US6146940 Method of fabricating a dynamic random access memory device
11/14/2000US6146939 Metal-polycrystalline silicon-N-well multiple layered capacitor
11/14/2000US6146938 Method of fabricating semiconductor device
11/14/2000US6146937 Method of forming a DRAM device utilizing a sacrificial doped oxide layer
11/14/2000US6146936 Integrated circuitry, methods of reducing alpha particle inflicted damage to SRAM cells, methods of forming integrated circuitry, and methods of forming SRAM cells
11/14/2000US6146935 Method for forming capacitor of semiconductor device using pre-bake
11/14/2000US6146934 Semiconductor device with asymmetric PMOS source/drain implant and method of manufacture thereof
11/14/2000US6146933 Field shield isolated transistor
11/14/2000US6146932 Method for fabricating metal-oxide-semiconductor field effect transistor device
11/14/2000US6146931 Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact
11/14/2000US6146930 Method of fabricating an active-matrix liquid crystal display
11/14/2000US6146929 Method for manufacturing semiconductor device using multiple steps continuously without exposing substrate to the atmosphere
11/14/2000US6146928 Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
11/14/2000US6146927 Semiconductor device, manufacturing method therefor and liquid crystal driving apparatus comprising the semiconductor device
11/14/2000US6146926 Lateral gate, vertical drift region transistor
11/14/2000US6146924 Magnetic insert into mold cavity to prevent resin bleeding from bond area of pre-mold (open cavity) plastic chip carrier during molding process
11/14/2000US6146921 Cavity mold cap BGA package with post mold thermally conductive epoxy attach heat sink
11/14/2000US6146920 Bump formation method
11/14/2000US6146919 Package stack via bottom leaded plastic (BLP) packaging
11/14/2000US6146916 Forming a zno buffer layer on a glass or a silicon substrate; and epitaxially growing a gan-based semiconductor layer on the zno buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ecr-mbe) method.
11/14/2000US6146912 Method for parallel alignment of a chip to substrate
11/14/2000US6146911 Semiconductor wafer and method of manufacturing the same
11/14/2000US6146910 Target configuration and method for extraction of overlay vectors from targets having concealed features
11/14/2000US6146907 Titanium dioxide, barium, strontium, and calcium, preferably tio2, baco3, srco3 and caco3, are deposited by pulse laser deposition. following the deposition of the various carbonates the deposited film is heated
11/14/2000US6146906 DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor
11/14/2000US6146904 Method of making a two transistor ferroelectric memory cell
11/14/2000US6146898 Degradating a solution to produce oxygen gas and water; supplying a sample, degrading sample, injecting degraded sample into an analytical apparatus, analyzing degraded sample with computer, allow oxygen gas to flow into air
11/14/2000US6146815 Developer for photosensitive polyimide precursor, and method of using it for patterning
11/14/2000US6146797 Focused ion beam lithography method with sample inspection through oblique angle tilt
11/14/2000US6146794 Electron beam antistatic method using conductive pins for charge disipation
11/14/2000US6146743 Barrier metallization in ceramic substrate for implantable medical devices
11/14/2000US6146742 Barrier/glue layer on polysilicon layer
11/14/2000US6146608 Stable hydride source compositions for manufacture of semiconductor devices and structures
11/14/2000US6146543 Microbellows actuator
11/14/2000US6146542 Using fluorine, chlorine, and bromine gases
11/14/2000US6146541 Method of manufacturing a semiconductor device that uses a calibration standard
11/14/2000US6146517 Filling trench; vapor deposition, electroplating
11/14/2000US6146505 Sputtering method for producing layered aluminium fine particles and use thereof
11/14/2000US6146504 Substrate support and lift apparatus and method
11/14/2000US6146492 Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method
11/14/2000US6146469 Apparatus and method for cleaning semiconductor wafers
11/14/2000US6146468 Semiconductor wafer treatment
11/14/2000US6146467 Treatment method for semiconductor substrates
11/14/2000US6146464 Susceptor for deposition apparatus
11/14/2000US6146463 Apparatus and method for aligning a substrate on a support member
11/14/2000US6146461 Chemical vapor deposition apparatus having a gas diffusing nozzle designed to diffuse gas equally at all levels
11/14/2000US6146459 Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface
11/14/2000US6146458 Growing a layer of group iii nitride material on a substrate
11/14/2000US6146457 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
11/14/2000US6146266 Method and apparatus for providing a purified resource in a manufacturing facility
11/14/2000US6146260 Polishing machine
11/14/2000US6146259 Carrier head with local pressure control for a chemical mechanical polishing apparatus
11/14/2000US6146256 Clamping wafer holder for chemical-mechanical planarization machines and method for using it
11/14/2000US6146250 Process for forming a semiconductor device
11/14/2000US6146248 Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
11/14/2000US6146242 Optical view port for chemical mechanical planarization endpoint detection
11/14/2000US6146135 Oxide film forming method
11/14/2000US6146083 Substrate transferring apparatus and substrate processing apparatus using the same
11/14/2000US6146077 Wafer transfer system of semiconductor fabricating equipment using a serial number detecting device
11/14/2000US6146008 System for diluting ultrapure chemicals which is intended for the microelectronics industry
11/14/2000US6145901 Pick and place head construction
11/14/2000US6145900 Gun-shaped tweezer having a non-rotatable head/body connection for adsorbing a semiconductor wafer
11/14/2000US6145731 Method for making a ceramic to metal hermetic seal
11/14/2000US6145673 Wafer transfer cassette
11/14/2000US6145651 Guide rail mechanism for a bonding apparatus
11/14/2000US6145520 Apparatus for processing substrates in a fluid tank
11/14/2000US6145519 Semiconductor workpiece cleaning method and apparatus