Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2000
12/26/2000US6164295 CVD apparatus with high throughput and cleaning method therefor
12/26/2000US6164241 Multiple coil antenna for inductively-coupled plasma generation systems
12/26/2000US6164133 Method and apparatus for pre-processing of semiconductor substrate surface analysis
12/26/2000US6163972 Apparatus and method for calibrating a wafer blade
12/26/2000US6163957 Multilayer laminated substrates with high density interconnects and methods of making the same
12/26/2000US6163956 Method of making chip scale package with heat spreade
12/25/2000CA2312223A1 Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
12/25/2000CA2312140A1 Charge separation type heterojunction structure and manufacturing method therefor
12/25/2000CA2311014A1 In situ projection optic metrology method and apparatus
12/24/2000CA2311053A1 Method and apparatus for characterization of optical systems
12/22/2000CA2311069A1 Reference voltage generator with monitoring and start up means
12/21/2000WO2000078109A1 Improved bga solder ball shear strength
12/21/2000WO2000078103A1 Integrated circuit package having a substrate vent hole
12/21/2000WO2000077857A1 Ferroelectric transistor and method of producing same
12/21/2000WO2000077856A1 Semiconductor device with compensated threshold voltage and method for making same
12/21/2000WO2000077855A1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
12/21/2000WO2000077854A1 Method for making all or part of an electronic device by material jet spraying
12/21/2000WO2000077849A1 Method for implementing resistance, capacitance and/or inductance in an integrated circuit
12/21/2000WO2000077848A1 Self-aligned buried strap for vertical transistors in semiconductor memories
12/21/2000WO2000077847A1 Method for producing conductor layers in particular made of copper for microelectronic devices
12/21/2000WO2000077846A1 Method for making a silicon substrate comprising a buried thin silicon oxide film
12/21/2000WO2000077845A1 Method of estimating lifetime of insulation film and method of managing semiconductor device
12/21/2000WO2000077844A1 Semiconductor package, semiconductor device, electronic device, and method of manufacturing semiconductor package
12/21/2000WO2000077843A1 Semiconductor package, semiconductor device, electronic device and production method for semiconductor package
12/21/2000WO2000077842A1 Method for producing a non-volatile semiconductor memory cell
12/21/2000WO2000077841A1 Method for producing a semiconductor memory component
12/21/2000WO2000077840A1 Semiconductor device and method of manufacture thereof
12/21/2000WO2000077839A1 Controlled-stress stable metallization for electronic and electromechanical devices
12/21/2000WO2000077838A1 Non-volatile semiconductor memory cell and method for its production
12/21/2000WO2000077837A1 Process for polycrystalline silicon film growth and apparatus for same
12/21/2000WO2000077836A1 Method and apparatus for tuning the impedance of integrated semiconductor devices
12/21/2000WO2000077835A1 Method and system for cleaning a semiconductor wafer
12/21/2000WO2000077833A2 Process chamber assembly with reflective hot plate
12/21/2000WO2000077832A2 Metal oxide thin films for high dielectric constant applications
12/21/2000WO2000077831A2 Methods for regulating surface sensitivity of insulating films in semiconductor devices
12/21/2000WO2000077830A2 A method for the preparation of an epitaxial silicon wafer with intrinsic gettering
12/21/2000WO2000077828A2 Method of manufacturing a variable work function gate mosfet using a dummy gate
12/21/2000WO2000077731A1 Device and method for making devices comprising at least a chip mounted on a support
12/21/2000WO2000077730A1 Electronic device comprising a chip fixed on a support and method for making same
12/21/2000WO2000077729A1 Device and method for making devices comprising at least a chip fixed on a support
12/21/2000WO2000077727A1 Module comprising at least a chip and its communication interface, object comprising a module and method for making said modules
12/21/2000WO2000077577A1 Modification of 193 nm sensitive photoresist materials by electron beam exposure
12/21/2000WO2000077575A1 Spin-on-glass anti-reflective coatings for photolithography
12/21/2000WO2000077548A1 Method of fabricating a semiconductor device
12/21/2000WO2000077500A1 Optical inspection method and apparatus utilizing a variable angle design
12/21/2000WO2000077278A1 Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover
12/21/2000WO2000077275A1 Method of processing films prior to chemical vapor deposition using electron beam processing
12/21/2000WO2000077112A1 Pressure-sensitive adhesive tape for provisionally fixing green sheet for ceramic electronic part and process for producing ceramic electronic part
12/21/2000WO2000077107A1 Abrasive solution and method for chemically-mechanically polishing a precious metal surface
12/21/2000WO2000076920A1 Improved ceria powder
12/21/2000WO2000076911A1 Improved methods of fabricating microelectromechanical and microfluidic devices
12/21/2000WO2000076725A1 Optical view port for chemical mechanical planarization endpoint detection
12/21/2000WO2000065647B1 Chip scale package
12/21/2000WO2000052738A3 Method for producing highly doped semiconductor components
12/21/2000WO2000046842A3 Work piece cleaning apparatus and associated method
12/21/2000WO2000039858A3 Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
12/21/2000WO2000028578A8 Improved megasonic cleaner
12/21/2000WO2000013209A3 Thermally annealed silicon wafers having improved intrinsic gettering
12/21/2000DE19944518A1 Soldering integrated circuit or integrated circuit housing onto circuit board having conducting pathway uses lacquer or film mask with non-circular openings
12/21/2000DE19935442C1 Power trench-metal oxide semiconductor transistor is produced using a temporary layer to allow formation of a trench insulating film which is thicker at the trench lower end than at the trench upper end
12/21/2000DE19927604A1 Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung Silicon with textured oxygen doping, its preparation and use
12/21/2000DE19926767A1 Ferroelektrischer Transistor und Verfahren zu dessen Herstellung Ferroelectric transistor and method of producing the
12/21/2000DE19926501A1 Verfahren zur Herstellung eines Halbleiterspeicherbauelements A method of manufacturing a semiconductor memory device
12/21/2000DE19926108A1 Nichtflüchtige Halbleiter-Speicherzelle und Verfahren zu deren Herstellung A non-volatile semiconductor memory cell and process for their preparation
12/21/2000DE19925961A1 Verfahren zum Aushärten von thermisch aushärtbarem Unterfüllmaterial A method for curing thermally curable underfill material
12/21/2000DE19925880A1 Avalanche-proof MOS-transistor structure
12/21/2000DE19905882C1 Vorrichtung zum Transport von Gegenständen, insbesondere von Wafern und/oder Waferbehältern An apparatus for transporting objects, in particular wafers and / or wafer containers
12/21/2000DE10029032A1 Grinding and etching system for plate-shaped objects has clamping table, grinder for grinding plate-shaped objects fixed on table, object washing device and dry etching device
12/21/2000DE10027587A1 Photoresist-Oberflächenschichtzusammensetzung und Verfahren zur Bildung eines feinen Musters und Verwendung derselben Photoresist surface layer composition and method for forming a fine pattern and using the same
12/21/2000DE10026280A1 Sonde für ein elektro-optisch abtastendes Oszilloskop A probe for electro-optically scanning oscilloscope
12/21/2000DE10024510A1 Heterojunction-type field effect transistor for portable telephone, has gate electrode formed over p-type low resistance area of barrier layer inbetween source and drain electrodes
12/21/2000DE10012897A1 Field effect transistor has main gate formed between side gate on semiconductor substrate, and source and drain impurity area formed at both sides on side gate of semiconductor substrate
12/21/2000CA2374944A1 Spin-on-glass anti-reflective coatings for photolithography
12/21/2000CA2374942A1 Method of fabricating a semiconductor device
12/21/2000CA2374666A1 Improved methods of fabricating microelectromechanical and microfluidic devices
12/20/2000EP1061783A2 Ceramic-metal substrate, particularly multiple substrate
12/20/2000EP1061639A2 Chucking system amd method
12/20/2000EP1061592A2 Magneto-resistance effect element, and its use as memory element
12/20/2000EP1061584A2 Self-supported ultra thin silicon wafer process
12/20/2000EP1061583A1 Semiconductor integrated circuit device and apparatus for producing the layout thereof
12/20/2000EP1061582A2 Capacitor and method of fabricating the same
12/20/2000EP1061581A1 Protection and filtering circuit
12/20/2000EP1061580A2 Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
12/20/2000EP1061578A1 Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them
12/20/2000EP1061577A2 High frequency multi-layered circuit component
12/20/2000EP1061575A1 Process for plating metal parts of semiconductor devices
12/20/2000EP1061574A1 Semiconductor device and method for manufacturing the same
12/20/2000EP1061573A2 Semiconductor device and method of manufacturing the same
12/20/2000EP1061572A1 Intergrated stucture for radio frequency applications
12/20/2000EP1061571A2 Adaptative method and apparatus for automatically classifying surface defects
12/20/2000EP1061569A2 Method for manufacturing ceramic substrate and non-fired ceramic substrate
12/20/2000EP1061568A1 Self-aligned method of manufacturing bipolar transistors
12/20/2000EP1061567A1 Method and apparatus for manufacturing an improved phosphosilicate glass film
12/20/2000EP1061566A2 Method for producing a semiconductor thin film by a separation step and solar cell production method
12/20/2000EP1061565A1 Method for thermally annealing silicon wafer and silicon wafer
12/20/2000EP1061564A2 MBE growth of group III-nitride semiconductor layers
12/20/2000EP1061563A2 Compound semiconductor alloy material with two dopants
12/20/2000EP1061560A2 Antireflective hard mask compositions
12/20/2000EP1061559A2 Method of detaching article and detachment apparatus
12/20/2000EP1061558A2 Edge contact loadcup