| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 01/02/2001 | US6169026 Method for planarization of semiconductor device including pumping out dopants from planarization layer separately from flowing said layer |
| 01/02/2001 | US6169025 Method of fabricating self-align-contact |
| 01/02/2001 | US6169024 Process to manufacture continuous metal interconnects |
| 01/02/2001 | US6169023 Method for making semiconductor device |
| 01/02/2001 | US6169022 Method of forming projection electrodes |
| 01/02/2001 | US6169021 Method of making a metallized recess in a substrate |
| 01/02/2001 | US6169020 Methods of fabricating integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region |
| 01/02/2001 | US6169019 Semiconductor apparatus and manufacturing method therefor |
| 01/02/2001 | US6169018 Fabrication method for semiconductor device |
| 01/02/2001 | US6169017 Method to increase contact area |
| 01/02/2001 | US6169016 Method of forming contact |
| 01/02/2001 | US6169014 Laser crystallization of thin films |
| 01/02/2001 | US6169013 Method of optimizing crystal grain size in polycrystalline silicon films |
| 01/02/2001 | US6169012 Chemical mechanical polishing for forming a shallow trench isolation structure |
| 01/02/2001 | US6169011 Trench isolation structure and method for same |
| 01/02/2001 | US6169010 Method for making integrated circuit capacitor including anchored plug |
| 01/02/2001 | US6169009 Dry etching the platinum group electroconductive film using a predetermined etching gas, wherein the etching gas is a gas mixture containing argon, oxygen and halogen |
| 01/02/2001 | US6169008 High Q inductor and its forming method |
| 01/02/2001 | US6169007 Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback |
| 01/02/2001 | US6169006 Semiconductor device having grown oxide spacers and method of manufacture thereof |
| 01/02/2001 | US6169005 Formation of junctions by diffusion from a doped amorphous silicon film during silicidation |
| 01/02/2001 | US6169004 Production method for a semiconductor device |
| 01/02/2001 | US6169003 Method for forming a MOS device with an elevated source and drain, and having a self-aligned channel input |
| 01/02/2001 | US6169002 Methods of forming trench isolation structures by etching back electrically insulating layers using etching masks |
| 01/02/2001 | US6169000 Process for the production of semiconductor substrate having silicon-on-insulating structure and process for the production of semiconductor device |
| 01/02/2001 | US6168999 Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain |
| 01/02/2001 | US6168998 Dual gate MOSFET fabrication method |
| 01/02/2001 | US6168997 Method of forming poly gate and polycide gate with equal height |
| 01/02/2001 | US6168996 Method of fabricating semiconductor device |
| 01/02/2001 | US6168995 Method of fabricating a split gate memory cell |
| 01/02/2001 | US6168994 Method of making memory device with an element splitting trench |
| 01/02/2001 | US6168993 Process for fabricating a semiconductor device having a graded junction |
| 01/02/2001 | US6168992 Methods for forming electrodes including sacrificial layers |
| 01/02/2001 | US6168991 DRAM capacitor including Cu plug and Ta barrier and method of forming |
| 01/02/2001 | US6168990 Method for fabricating Dram cell capacitor |
| 01/02/2001 | US6168989 Process for making new and improved crown-shaped capacitors on dynamic random access memory cells |
| 01/02/2001 | US6168988 Method for producing barrier-free semiconductor memory configurations |
| 01/02/2001 | US6168987 Method for fabricating crown-shaped capacitor structures |
| 01/02/2001 | US6168986 Method of making a sacrificial self-aligned interconnect structure |
| 01/02/2001 | US6168985 Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same |
| 01/02/2001 | US6168984 Reduction of the aspect ratio of deep contact holes for embedded DRAM devices |
| 01/02/2001 | US6168983 Method of making a high-voltage transistor with multiple lateral conduction layers |
| 01/02/2001 | US6168982 Manufacture of electronic devices comprising thin-film circuit elements |
| 01/02/2001 | US6168981 Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
| 01/02/2001 | US6168980 Semiconductor device and method for forming the same |
| 01/02/2001 | US6168979 Method for fabricating semiconductor device |
| 01/02/2001 | US6168978 Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate |
| 01/02/2001 | US6168977 Method of manufacturing a semiconductor device having conductive patterns |
| 01/02/2001 | US6168976 Socketable BGA package |
| 01/02/2001 | US6168974 Process of mounting spring contacts to semiconductor devices |
| 01/02/2001 | US6168972 Flip chip pre-assembly underfill process |
| 01/02/2001 | US6168970 Ultra high density integrated circuit packages |
| 01/02/2001 | US6168969 Surface mount IC using silicon vias in an area array format or same size as die array |
| 01/02/2001 | US6168963 System for adhering parts |
| 01/02/2001 | US6168962 Method of manufacturing a semiconductor light emitting device |
| 01/02/2001 | US6168961 Process for the preparation of epitaxial wafers for resistivity measurements |
| 01/02/2001 | US6168959 Method of forming a ferroelectric memory device |
| 01/02/2001 | US6168958 Depositing a high permittivity layer of first thickness on the substrate, a first set of gate electrodes are formed,selected portion of permittivity layer are then removed, thus reducing permittivity layer to second thicknessthickness, forming gate |
| 01/02/2001 | US6168909 Material and method for forming pattern |
| 01/02/2001 | US6168907 Method for etching semiconductor device |
| 01/02/2001 | US6168900 Mixture of tert-butoxycarbonyl protected polyhydroxystyrene polymers having different molecular weight are used as a basic polymer of chemically amplified resist together with photoacid generator; excellent in resolution and focusing |
| 01/02/2001 | US6168898 Positive acting photodielectric composition |
| 01/02/2001 | US6168891 Correcting mask patterns for semiconductor integrated circuits comprising a sorting step of sorting patterns units composing a mask pattern based on their respective shape/and or positional relationship and a correction step |
| 01/02/2001 | US6168890 For forming a microlithographic mask having a thin membrane |
| 01/02/2001 | US6168726 Etching an oxidized organo-silane film |
| 01/02/2001 | US6168704 Site-selective electrochemical deposition of copper |
| 01/02/2001 | US6168697 Holders suitable to hold articles during processing and article processing methods |
| 01/02/2001 | US6168695 Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same |
| 01/02/2001 | US6168684 Wafer polishing apparatus and polishing method |
| 01/02/2001 | US6168683 Apparatus and method for the face-up surface treatment of wafers |
| 01/02/2001 | US6168678 Method and device for stacking substrates which are to be joined by bonding |
| 01/02/2001 | US6168672 Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system |
| 01/02/2001 | US6168669 Substrate holding apparatus and substrate process system |
| 01/02/2001 | US6168668 Shadow ring and guide for supporting the shadow ring in a chamber |
| 01/02/2001 | US6168667 Resist-processing apparatus |
| 01/02/2001 | US6168665 Substrate processing apparatus |
| 01/02/2001 | US6168659 Forming an amorphous silicon dioxide thin film on a silicon substrate, forming a single crystal silicon thin film on said silicon dioxide thin film and then forming gallium nitride directly on said silicon thin film. |
| 01/02/2001 | US6168638 Touchless stabilizer for processing spherical shaped devices |
| 01/02/2001 | US6168637 Use of a large angle implant and current structure for eliminating a critical mask in flash memory processing |
| 01/02/2001 | US6168504 Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks |
| 01/02/2001 | US6168500 Monitoring system for dicing saws |
| 01/02/2001 | US6168499 Grinding apparatus for semiconductor wafers |
| 01/02/2001 | US6168427 Apparatus for guiding the removal of a processing tube from a semiconductor furnace |
| 01/02/2001 | US6168364 Vacuum clean box, clean transfer method and apparatus therefor |
| 01/02/2001 | US6168310 Device for measuring physical quantity using pulsed laser interferometry |
| 01/02/2001 | US6168296 Lighting unit for reading marks |
| 01/02/2001 | US6168169 Vacuum collet with release filament |
| 01/02/2001 | US6168063 Ultrasonic vibration bonding machine |
| 01/02/2001 | US6168048 Methods and systems for distributing liquid chemicals |
| 01/02/2001 | US6168025 Wafer holding structure for semiconductor wafer containers |
| 01/02/2001 | US6168003 Method and apparatus for the linear positioning and for the position recognition of a substrate on an onserting unit |
| 01/02/2001 | US6167893 Dynamic chuck for semiconductor wafer or other substrate |
| 01/02/2001 | US6167891 Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers |
| 01/02/2001 | US6167837 Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor |
| 01/02/2001 | US6167836 Plasma-enhanced chemical vapor deposition apparatus |
| 01/02/2001 | US6167835 Two chamber plasma processing apparatus |
| 01/02/2001 | US6167834 Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| 01/02/2001 | US6167583 Double side cleaning apparatus for semiconductor substrate |
| 01/02/2001 | CA2172233C Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
| 01/02/2001 | CA2088605C Formation of microstructures by multiple level deep x-ray lithography with sacrificial metal layers |