Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2001
04/17/2001US6218259 Capacitor and method for forming the same
04/17/2001US6218258 Method for fabricating semiconductor device including capacitor with improved bottom electrode
04/17/2001US6218257 Method of forming semiconductor memory device
04/17/2001US6218256 Electrode and capacitor structure for a semiconductor device and associated methods of manufacture
04/17/2001US6218255 Overcoating with titanium, or nitride thereof, filling channel with electroconductive material; patterning
04/17/2001US6218254 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
04/17/2001US6218253 Method of manufacturing a bipolar transistor by using only two mask layers
04/17/2001US6218252 Method of forming gate in semiconductor device
04/17/2001US6218251 Asymmetrical IGFET devices with spacers formed by HDP techniques
04/17/2001US6218250 Method and apparatus for minimizing parasitic resistance of semiconductor devices
04/17/2001US6218249 MOS transistor having shallow source/drain junctions and low leakage current
04/17/2001US6218248 Semiconductor device and method for fabricating the same
04/17/2001US6218247 Method for fabricating mask ROM
04/17/2001US6218246 Fabrication method of triple polysilicon flash eeprom arrays
04/17/2001US6218245 Method for fabricating a high-density and high-reliability EEPROM device
04/17/2001US6218244 Method of fabricating transistor
04/17/2001US6218243 Method of fabricating a DRAM capacitor
04/17/2001US6218242 Method for fabricating capacitors in semiconductor integrated circuit
04/17/2001US6218241 Fabrication method for a compact DRAM cell
04/17/2001US6218240 Method of fabricating low voltage coefficient capacitor
04/17/2001US6218239 Manufacturing method of a bottom plate
04/17/2001US6218238 Method of fabricating DRAM capacitor
04/17/2001US6218237 Method of forming a capacitor
04/17/2001US6218236 Method of forming a buried bitline in a vertical DRAM device
04/17/2001US6218235 Method of manufacturing a DRAM and logic device
04/17/2001US6218233 Thin film capacitor having an improved bottom electrode and method of forming the same
04/17/2001US6218232 Method for fabricating DRAM device
04/17/2001US6218231 Forming iridium dioxide and platinum films; selectively etching
04/17/2001US6218230 Method for producing capacitor having hemispherical grain
04/17/2001US6218229 Method of fabricating semiconductor device having a dual-gate
04/17/2001US6218227 Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer
04/17/2001US6218226 Method of forming an ESD protection device
04/17/2001US6218224 Nitride disposable spacer to reduce mask count in CMOS transistor formation
04/17/2001US6218223 Process for producing electrode for semiconductor element and semiconductor device having the electrode
04/17/2001US6218222 Method of manufacturing a semiconductor device with a schottky junction
04/17/2001US6218221 Thin film transistor with a multi-metal structure and a method of manufacturing the same
04/17/2001US6218220 Method for fabricating thin film transistor
04/17/2001US6218219 Semiconductor device and fabrication method thereof
04/17/2001US6218218 Method for reducing gate oxide damage caused by charging
04/17/2001US6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same
04/17/2001US6218215 Methods of encapsulating a semiconductor chip using a settable encapsulant
04/17/2001US6218214 Integrated circuit package for flip chip and method of forming same
04/17/2001US6218213 Microelectronic components with frangible lead sections
04/17/2001US6218212 Apparatus for growing mixed compound semiconductor and growth method using the same
04/17/2001US6218207 Nitriding a single crystal metal
04/17/2001US6218206 Method for producing thin film transistor and thin film transistor using the same
04/17/2001US6218204 Capacitance compensation for topological measurements in a semiconductor device
04/17/2001US6218203 Method of producing a contact structure
04/17/2001US6218200 Multi-layer registration control for photolithography processes
04/17/2001US6218199 Silicon substrate with identification data
04/17/2001US6218198 Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film
04/17/2001US6218197 Embedded LSI having a FeRAM section and a logic circuit section
04/17/2001US6218196 Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device
04/17/2001US6218090 Imagewise exposure; etching; exposure to electron beam radiation; development
04/17/2001US6218084 Etching; overcoating with polymer; covering with photoresist; plasma etching
04/17/2001US6218082 Method for patterning a photoresist
04/17/2001US6218079 Forming metal wiring
04/17/2001US6218078 Using layer of hydrogen silsequioxane; patterning; etching
04/17/2001US6218077 Exposure a substrate to energy source ; changing depth of focus
04/17/2001US6218069 Photosensitive resin composition and making process
04/17/2001US6218060 Electron beam exposure method and electron beam exposure apparatus
04/17/2001US6218058 Charged particle beam transfer mask
04/17/2001US6218057 Radiating a patterned mask; development
04/17/2001US6218020 Curing polysiloxane
04/17/2001US6217972 Enhancements in framed sheet processing
04/17/2001US6217951 Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device
04/17/2001US6217949 Marking a semiconductor and exposure to energy
04/17/2001US6217937 Organometallic vapor phase epitaxy; a cold wall reactor; inner wall, central cavity with an open and closed end and a heater, outer wall; space between inner and outer provides a reactor cell with a susceptor rotatably mounted
04/17/2001US6217936 Semiconductor fabrication extended particle collection cup
04/17/2001US6217842 Single crystal SIC and method of producing the same
04/17/2001US6217786 Using plasma formed from an etching gas that includes a fluorocarbon gas, a nitrogen reactant gas, an oxygen reactant gas, an inert carrier gas, and a hydrogen-containing additive gas
04/17/2001US6217785 Scavenger for fluorine in the electromagnetically coupled planar plasma apparatus improves the etching of oxides with fluorohydrocarbon etchants with respect to the selectivity of etching of the oxide, gives improved anisotropy
04/17/2001US6217784 High selectivity etching process for oxides
04/17/2001US6217721 Filling plug having high aspect ratio by precoating interior of plug hole or other aperture with liner layer deposited by physical vapor deposition utilizing high-density plasma
04/17/2001US6217718 Apparatus having plasma generating coil positioned within processing chamber so as to prevent or minimize variations about center axis of processing chamber in quantity of ions delivered to workpiece
04/17/2001US6217715 Coating of vacuum chambers to reduce pump down time and base pressure
04/17/2001US6217714 Sputtering apparatus in vacuum chamber having gas supply, having three discrete separated electrodes, with associated targets and magnets, fixed substrate support, variable power supplies connected to electrodes
04/17/2001US6217705 Method of holding substrate and substrate holding system
04/17/2001US6217703 Plasma processing apparatus
04/17/2001US6217667 Method for cleaning copper surfaces
04/17/2001US6217665 Method of cleaning substrate using ultraviolet radiation
04/17/2001US6217663 Substrate processing apparatus and substrate processing method
04/17/2001US6217662 Susceptor designs for silicon carbide thin films
04/17/2001US6217661 Plasma processing apparatus and method
04/17/2001US6217659 Dynamic blending gas delivery system and method
04/17/2001US6217658 Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing
04/17/2001US6217655 Stand-off pad for supporting a wafer on a substrate support chuck
04/17/2001US6217651 Method for correction of thin film growth temperature
04/17/2001US6217650 Epitaxial-wafer fabricating process
04/17/2001US6217645 Method of depositing films by using carboxylate complexes
04/17/2001US6217430 Pad conditioner cleaning apparatus
04/17/2001US6217426 CMP polishing pad
04/17/2001US6217420 Grinding machine spindle flexibly attached to platform
04/17/2001US6217417 Method for polishing thin plate and plate for holding thin plate
04/17/2001US6217416 Abrasive, oxidizer, acetic acid, and film forming agent; integrated circuits; semiconductors; wafers; thin films
04/17/2001US6217412 Method for characterizing polish pad lots to eliminate or reduce tool requalification after changing a polishing pad
04/17/2001US6217410 Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing
04/17/2001US6217357 Method of manufacturing two-power supply voltage compatible CMOS semiconductor device
04/17/2001US6217343 Multipoint conductive sheet
04/17/2001US6217319 Semiconductor manufacturing device and method of processing wafer