Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2001
05/01/2001US6224360 Resin sealing device for chip-size packages
05/01/2001US6224319 Material handling device with overcenter arms and method for use thereof
05/01/2001US6224312 Optimal trajectory robot motion
05/01/2001US6224274 Semiconductor processing apparatus
05/01/2001US6224252 Chemical generator with controlled mixing and concentration feedback and adjustment
05/01/2001US6224248 Light-source device and exposure apparatus
05/01/2001US6223967 Extended travel wire bonding machine
05/01/2001US6223961 Apparatus for cleaving crystals
05/01/2001US6223893 Surface package type semiconductor package and method of producing semiconductor memory
05/01/2001US6223886 Integrated roller transport pod and asynchronous conveyor
05/01/2001US6223800 Die bonding apparatus
05/01/2001US6223685 Film to tie up loose fluorine in the chamber after a clean process
05/01/2001US6223684 Film deposition apparatus
05/01/2001US6223638 Slicing apparatus
05/01/2001US6223447 Fastening device for a purge ring
05/01/2001US6223432 Method of forming dual conductive plugs
05/01/2001US6223429 Method of production of semiconductor device
05/01/2001US6223396 Pivoting side handles
05/01/2001CA2210033C A method of suppressing convection in a fluid in a cylindrical vessel
05/01/2001CA2199112C Lead frame flash removing method and apparatus
04/2001
04/26/2001WO2001030122A1 Production of a dense mist of micrometric droplets in particular for extreme uv lithography
04/26/2001WO2001030115A1 Ceramic heater
04/26/2001WO2001029968A1 Field programmable gate array (fpga) cell
04/26/2001WO2001029942A1 Energy stabilized gas discharge laser
04/26/2001WO2001029902A2 Device and method for tempering several process goods
04/26/2001WO2001029901A2 Device and method for tempering at least one process good
04/26/2001WO2001029900A1 Integrated circuit with at least one capacitor and method for producing the same
04/26/2001WO2001029899A2 Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same
04/26/2001WO2001029897A1 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer
04/26/2001WO2001029895A1 Method of forming a microelectronic assembly
04/26/2001WO2001029894A1 Peripheral spacer etch a non-volatile memory
04/26/2001WO2001029893A1 Method for depositing nanolaminate thin films on sensitive surfaces
04/26/2001WO2001029892A1 Self-aligned metal caps for interlevel metal connections
04/26/2001WO2001029891A1 Conformal lining layers for damascene metallization
04/26/2001WO2001029890A2 Method relating to anodic bonding
04/26/2001WO2001029889A1 A wire for semiconductor and a manufacturing method thereof
04/26/2001WO2001029888A1 Method for the cleaning of a monocrystalline silicon semi-conductor disk
04/26/2001WO2001029887A1 Solvents for processing silsesquioxane and siloxane resins
04/26/2001WO2001029886A1 Method for creating a layer during the production of a semiconductor element and a semiconductor component
04/26/2001WO2001029885A2 Method for production of a capacitor electrode with a barrier structure
04/26/2001WO2001029884A1 Apparatus for attaching resists and wafers to substrates
04/26/2001WO2001029883A1 Device and method for cleaning substrates
04/26/2001WO2001029882A2 Method for in situ removal of a dielectric antireflective coating during a gate etch process
04/26/2001WO2001029881A2 Method of making an optoelectronic device using multiple etch stop layers
04/26/2001WO2001029879A2 Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
04/26/2001WO2001029873A1 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
04/26/2001WO2001029872A1 Particle optical apparatus
04/26/2001WO2001029847A1 Infiltrated nanoporous materials and methods of producing same
04/26/2001WO2001029845A1 Integral lens for high energy particle flow, method for producing such lenses and use thereof in analysis devices and devices for radiation therapy and lithography
04/26/2001WO2001029619A1 Reticle, wafer and method for determining an alignment error in a stepper
04/26/2001WO2001029618A1 Method for determining rotational error portion of total misali gnment error in a stepper
04/26/2001WO2001029617A1 Reticle, wafer, measuring stepper and methods for preventative maintenance
04/26/2001WO2001029568A1 Non-invasive electrical measurement of semiconductor wafers
04/26/2001WO2001029544A1 Method of determining the charge carrier concentration in materials, notably semiconductors
04/26/2001WO2001029284A1 Novel composition for selective etching of oxides over metals
04/26/2001WO2001029283A1 Plating method, wiring forming method and devices therefor
04/26/2001WO2001029280A1 Deposition of transition metal carbides
04/26/2001WO2001029278A1 Method and apparatus for substrate biasing in multiple electrode sputtering systems
04/26/2001WO2001029145A1 Improved cmp products
04/26/2001WO2001029141A1 Deposition of fluorosilsesquioxane films
04/26/2001WO2001029052A1 Deposition of films using organosilsesquioxane-precursors
04/26/2001WO2001028950A1 A method and apparatus for treating a substrate with an ozone-solvent solution
04/26/2001WO2001028739A1 Device for polishing outer peripheral edge of semiconductor wafer
04/26/2001WO2000074111A3 Apparatus and methods for drying batches of wafers
04/26/2001WO2000068971A3 Device for treating wafers
04/26/2001WO2000067321A3 6-t static random access memory (sram) having vertical cmos transistors
04/26/2001WO2000059016A3 Method for producing thin, uniform oxide layers on silicon surfaces
04/26/2001WO2000058953A3 Reactive ion beam etching method and a thin film head fabricated using the method
04/26/2001WO2000058208A3 Method for producing high-purity solutions using gaseous hydrogen fluoride
04/26/2001US20010000515 Forming planarization film on substrate that does not smoke or fume on heating by applying polymeric solution including novolac resin, a surfactant selected from nonfluorinated hydrocarbon, fluorinated hydrocarbon and combinations, heating
04/26/2001US20010000502 Grinding and polishing machines
04/26/2001US20010000497 Using a buffing pad having a geometrically optimized shape along with optimizing the buff head diameter, offset and overlays for chemical and mechanical polishing of semiconductor wafer
04/26/2001US20010000496 Forming a conductive layer on semiconductor substrate and covering conductive layer with a dielectric layer, forming titanium nitride layer over dielectric without contacting conductive layer, patterning nitride, dielectric, conductive
04/26/2001US20010000495 Picking up the integrated circuit chip with the metal layer and positoning the chip faces the housing with metal layer there between, heating to melt metal layer above eutectic temperature to melt and attach the chip to the housing
04/26/2001US20010000494 Methods of forming SOI insulator layers, methods of forming transistor devices, and semiconductor devices and assemblies
04/26/2001US20010000493 Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures
04/26/2001US20010000492 Shared length cell for improved capacitance
04/26/2001US20010000490 Rotating a polishing pad affixed to a platen at a first rotational speed, supplying an abrasive material over a surface of polishing pad, pressing the wafer against pad surface while at the same time rotating wafer at second speed
04/26/2001US20010000489 Automatically generating and storing a repair solution for muli-chip module (MCM), attaching a repair integrated circuit IC die to MCM, wire-bonding the reapir IC die in accordance with stored repair solution to repair MCM that fails testing
04/26/2001US20010000477 Apparatus for eliminating impurities by ozone generated in space above substrate surface and film forming method and system therewith
04/26/2001US20010000476 As silicon source, increases deposition rate of dielectric films while providing good step coverage and gap-fill properties
04/26/2001US20010000460 Semiconductor failure analysis system
04/26/2001US20010000450 Semiconductor memory device with reduced power consumption and stable operation in data holding state
04/26/2001US20010000440 Contact structure
04/26/2001US20010000416 Copper wire-bonding pad
04/26/2001US20010000415 Method of processing films prior to chemical vapor deposition using electron beam processing
04/26/2001US20010000412 Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same
04/26/2001US20010000411 Semiconductor device and method for fabricating the same
04/26/2001US20010000409 Method for ashing and apparatus employable for ashing
04/26/2001US20010000396 Apparatus for depositing a metal film, comprising a holder that positions the substrate so seed layer contacts an electrolyte solution, and electric contact which contacts second side or edge of substrate; uniform current density
04/26/2001DE19964214A1 Kompensationsbauelement und Verfahren zu dessen Herstellung Compensation component and method for its production
04/26/2001DE19952631A1 Measurement and evaluation method to determine doping dose in semiconductor structures; involves measuring characteristic curves of capacitance as function of voltage
04/26/2001DE19950905A1 Magnetically supported grinding shaft for machining microelectronic waters
04/26/2001DE19950885A1 Production of elastic contacts comprises partially anisotropically plasma etching a polymer film located below a copper-etched hole
04/26/2001DE19950364A1 Integrated circuit arrangement used as a DRAM cell arrangement comprises a capacitor with capacitor electrodes and a capacitor dielectric
04/26/2001DE19949805A1 Integrated circuit for silicon on insulator type non-volatile random access memory device, has sense component in silicon on insulator layer that overlaps on PN channel of silicon substrate
04/26/2001DE19946497A1 Joint for connecting semiconductor chips to circuit boards comprises a first coupling element fixed to a first surface and a second coupling element in the form of a step running along a plane
04/26/2001DE10052149A1 Semiconductor component, e.g. MOSFET comprises a layer of alternating conductivity consisting of vertically extending first zones of a first conductivity and vertically extending second zones of a second conductivity
04/26/2001DE10050601A1 Holder for holding integrated semiconductor circuits consists of an elastic material having a conducting adhesion surface
04/26/2001DE10049257A1 Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition A process for thin film production by means of atomic layer deposition