Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2001
04/17/2001US6217275 Pickup apparatus
04/17/2001US6217272 In-line sputter deposition system
04/17/2001US6217212 Method and device for detecting an incorrect position of a semiconductor wafer
04/17/2001US6217034 Edge handling wafer chuck
04/17/2001US6216941 Method for forming high frequency connections to high temperature superconductor circuits and other fragile materials
04/17/2001US6216937 Process and apparatus to remove closely spaced chips on a multi-chip module
04/17/2001US6216883 Wafer holding hand
04/17/2001US6216874 Wafer carrier having a low tolerance build-up
04/17/2001US6216709 Streak-free drying immersed workpiece; partially draining a container to expose and dry a portion of workpiece, then holding workpiece with second holder, not same as wet holding mechanism, on dry portion & draining remainder of liqiud
04/17/2001US6216548 Method for sampling particles present in a processing chamber
04/17/2001US6216475 Cooling device and cooling method
04/17/2001US6216421 Device for seating and unseating a lid from a carrying cassette
04/17/2001US6216364 Method and apparatus for drying washed objects
04/17/2001US6216328 Transport chamber and method for making same
04/17/2001US6216324 Method for a thin film multilayer capacitor
04/17/2001CA2203782C Semiconductor test chip with on-wafer switching matrix
04/17/2001CA2162748C Ion generating source for use in an ion implanter
04/12/2001WO2001026163A1 Apparatus for localizing production errors in a photovoltaic element
04/12/2001WO2001026160A1 Semiconductor device combining the advantages of massive and soi architecture, and method for making same
04/12/2001WO2001026159A1 Lateral rf mos device with improved breakdown voltage
04/12/2001WO2001026156A1 Nonvolatile memory
04/12/2001WO2001026155A1 Semiconductor device, method and device for producing the same, circuit board, and electronic equipment
04/12/2001WO2001026154A1 Die pad crack absorption integrated circuit chip and fabrication process
04/12/2001WO2001026151A1 Method for insulating an integrated circuit chip by substance deposit on the active surface
04/12/2001WO2001026150A1 System and method for repairing interconnect links
04/12/2001WO2001026149A1 Heat-up time reduction before metal deposition
04/12/2001WO2001026148A1 Improved metal deposition process
04/12/2001WO2001026147A1 Semiconductor device, method of manufacture thereof, circuit board, and electronic device
04/12/2001WO2001026146A1 Semiconductor device and method of manufacture thereof
04/12/2001WO2001026145A1 Seed layers for interconnects and methods and apparatus for their fabrication
04/12/2001WO2001026144A1 Methods for cleaning microelectronic substrates using ultradilute cleaning liquids
04/12/2001WO2001026143A1 Method of manufacturing semiconductor device
04/12/2001WO2001026142A1 Method for a consistent shallow trench etch profile
04/12/2001WO2001026141A2 Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure
04/12/2001WO2001026140A1 Holding device for semi-conductor disks
04/12/2001WO2001026139A2 Dram bit lines and support circuitry contacting scheme
04/12/2001WO2001026137A2 Three dimensional device integration method and integrated device
04/12/2001WO2001026134A1 Array of multiple charged particle beamlet emitting columns
04/12/2001WO2001026133A2 High transmission, low energy beamline apparatus for ion implanter
04/12/2001WO2001026113A1 Integrated circuit with a non-volatile mos ram cell
04/12/2001WO2001025865A1 Method and apparatus for monitoring controller performance using statistical process control
04/12/2001WO2001025854A1 Method for forming pattern
04/12/2001WO2001025852A1 Trimming mask with semitransparent phase-shifting regions
04/12/2001WO2001025801A1 Integrated test cell
04/12/2001WO2001025706A1 Vapor assisted rotary drying method and apparatus
04/12/2001WO2001025562A1 Backerboard sheet including aerated concrete core
04/12/2001WO2001025561A1 Wallboard sheet including aerated concrete core
04/12/2001WO2001025560A1 System and method for making wallboard or backerboard sheets including aerated concrete
04/12/2001WO2001025511A1 Single step process for epitaxial lateral overgrowth of nitride based materials
04/12/2001WO2001025366A1 Cmp products
04/12/2001WO2001025167A1 Process for cleaning ceramic articles
04/12/2001WO2001025144A1 Method for producing high-purity hydrochloric acid
04/12/2001WO2001025139A1 Microreplication in ceramics
04/12/2001WO2001024969A2 Fluid dispensing fixed abrasive polishing pad
04/12/2001WO2001024967A1 Method for soft soldering of components and a soft soldered device
04/12/2001WO2001024963A1 Method and device for frictional connection, and holding tool used for the frictional connection device
04/12/2001WO2001024950A1 Method and apparatus for semiconductor cleaning
04/12/2001WO2001006442A3 Carrier tray for integrated circuits such as microprocessors
04/12/2001WO2000065637A3 Device for treating silicon wafers
04/12/2001WO2000031806A8 Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
04/12/2001WO2000022193A3 Electrodeposition of metals in small recesses using modulated electric fields
04/12/2001US20010000247 Semiconductor device manufacturing method
04/12/2001US20010000246 Plasma etch process in a single inter-level dielectric etch
04/12/2001US20010000245 Conductive sidewall couples to the gate of the gated lateral bipolar transitor and to a retrograded, highly doped bottom layer of the single crystalline semiconductor structure; both bipolar junction transistors (BJT) and metal oxide action
04/12/2001US20010000244 Using only one mask to form the critical dimensions; silyation forms a conductive layer, the main structure of a bottom electrode, on the sidewall of the deep ultraviolet photoresist
04/12/2001US20010000243 Forming a thin film of an amorphous or polycrystalline material of small particle size on a substrate by irradiating with an energy beam of adjusted cross-section to convert the particles to polycrystalline and larger size
04/12/2001US20010000242 Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device
04/12/2001US20010000218 Semiconductor device
04/12/2001US20010000215 Chip device, and method of making the same
04/12/2001US20010000199 Method and apparatus for manufacturing a semiconductor integrated circuit
04/12/2001US20010000198 Gas treatment apparatus
04/12/2001DE19958905C1 Production of a structure in a substrate comprises forming a hard mask on the substrate, forming a structure of trenches in the substrate
04/12/2001DE19949084A1 Transport system for substrates in plant with several processing stations has substrate carrier with at least two runners with which it can be supported on roller path and moved through plant
04/12/2001DE19948517A1 Treating and/or processing disc-shaped substrates involves first rotating substrate in holder for initial treatment and/or rotating holder with substrate for subsequent treatment
04/12/2001DE19948206A1 Verfahren zur Herstellung hochreiner Salzsäure Method for producing high purity hydrochloric acid
04/12/2001DE19947914A1 Verfahren zum Weichlöten von Komponenten und weichgelötete Anordnung A method for soft soldering of components and assembly weichgelötete
04/12/2001DE19947117A1 Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung Ferroelectric transistor and its use in a memory cell arrangement
04/12/2001DE19946884A1 Eprom-Struktur für Halbleiterspeicher EPROM structure for semiconductor memories
04/12/2001DE19946883A1 Verfahren zur Herstellung eines integrierten CMOS-Halbleiterspeichers A process for producing an integrated CMOS semiconductor memory
04/12/2001DE19946437A1 Ferroelektrischer Transistor Ferroelectric transistor
04/12/2001DE19945939A1 Integrated semiconductor circuit includes a second dielectric layer which lies in the opening of a first dielectric layer and is planar to a first conducting layer
04/12/2001DE19945405A1 Verfahren zum Herstellen einer integrierten Schaltung A method of fabricating an integrated circuit
04/12/2001DE19945140A1 Verfahren zur Herstellung einer Maskenschicht mit Öffnungen verkleinerter Breite A process for producing a mask layer with a reduced width openings
04/12/2001DE19944144A1 Production of contacts and conducting pathways in or on crystalline silicon carbide semiconductor substrates comprises implanting aluminum in the substrates at a specified temperature with a specified ion dose and energy
04/12/2001DE19940362A1 Metal oxide semiconductor transistor comprises a sink doped with a first conductivity type in semiconductor substrate, an epitaxial layer and source/drain regions of a second conductivity type and channel region arranged in epitaxial layer
04/12/2001DE19929675A1 Verfahren zur Herstellung von ROM-Speicherzellen A process for the production of ROM memory cells
04/12/2001DE10049536A1 Ion source arrangement has ion source movable relative to chamber along fixed curve essentially in horizontal plane to enable access to inner wall of chamber
04/12/2001DE10048374A1 Process for the large surface direct bonding of wafers e.g. gallium arsenide wafers comprises carrying out final cleaning of wafers using molecular or atomic hydrogen and bringing cleaned surfaces of wafers in contact with each other
04/12/2001DE10043212A1 Cutting a workpiece, e.g. a semiconductor wafer comprises a cutting step and a whisker removal step
04/12/2001DE10043193A1 Test device for semiconductor wafers allowing precise determination of the measurement waveform and so compensation for phase shifts during measurement and increased accuracy
04/12/2001DE10043183A1 Semiconductor device e.g., metal oxide semiconductor field effect transistor includes silicon on insulator substrate with semiconductor layer, isolation films, gate electrode, intermediate layer isolation film and filled contact hole
04/12/2001DE10041354A1 Foreign particle or defect checking system for inspection of substrate or wafer, has size information processing device which processes size of foreign particle or defect on predetermined object
04/12/2001DE10038290A1 SIMOX semiconductor structure e.g., wafer comprises a silicon substrate, a doped glass layer produced by ion implantation on the substrate and a silicon layer on the substrate
04/12/2001DE10031951A1 Multiple chip semiconducting module has adhesive layers with openings coinciding with contact points, conducting bodies for connecting between first and second chip contact points
04/12/2001DE10030481A1 Halbleiter-Fabrikautomatisierungssystem und Verfahren zur Bearbeitung eines Postens von Halbleiterwafern in einer vollautomatischen oder halbautomatischen Betriebsart Semiconductor factory automation system and method for processing an item of semiconductor wafers in a fully automatic or semi-automatic mode
04/12/2001DE10022982A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
04/12/2001DE10006481A1 Arrangement for cleaning disc-shaped substrates has brushes movable out of brush chamber into process chamber and back again on carriage with toothed belt or spindle drive
04/12/2001CA2387584A1 Production of high purity hydrochloric acid
04/12/2001CA2347295A1 Holding device for semiconductor wafers
04/11/2001EP1091622A2 Control apparatus for a light radiation-type rapid heating and processing device