| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 07/03/2001 | CA2209884C Method of separating wafers into individual die |
| 06/28/2001 | WO2001047117A1 High sheet mos resistor method and apparatus |
| 06/28/2001 | WO2001047045A1 Solution processing |
| 06/28/2001 | WO2001047044A2 Forming interconnects |
| 06/28/2001 | WO2001047043A1 Solution processed devices |
| 06/28/2001 | WO2001047032A1 Method for raw etching silicon solar cells |
| 06/28/2001 | WO2001047028A1 Production of single-pole components |
| 06/28/2001 | WO2001047026A1 Silicon carbide lmosfet with gate break-down protection |
| 06/28/2001 | WO2001047025A1 Silicon carbide lateral mosfet and method of making the same |
| 06/28/2001 | WO2001047024A1 Silicon carbide n-channel power lmosfet |
| 06/28/2001 | WO2001047017A1 Integrated circuit with removable esd protection |
| 06/28/2001 | WO2001047014A1 Organic flip chip packages with an array of through hole pins |
| 06/28/2001 | WO2001047013A1 Organic packages with solders for reliable flip chip connections |
| 06/28/2001 | WO2001047012A1 Non-volatile memory cells and periphery |
| 06/28/2001 | WO2001047011A1 A cvd/pvd/cvd/pvd fill process |
| 06/28/2001 | WO2001047010A2 Trench-diffusion corner rounding in a shallow-trench (sti) process |
| 06/28/2001 | WO2001047009A2 Method and apparatus for detecting the endpoint of a photoresist stripping process |
| 06/28/2001 | WO2001047008A1 Pad metallization over active circuitry |
| 06/28/2001 | WO2001047007A1 Slurry-less chemical-mechanical polishing of oxide materials |
| 06/28/2001 | WO2001047006A1 Tunnel nitride for improved polysilicon emitter |
| 06/28/2001 | WO2001047005A1 Metal mask etching of silicon |
| 06/28/2001 | WO2001047004A1 Method for fabricating device chips from thin sheet of pyroelectric material |
| 06/28/2001 | WO2001047003A2 Methods and apparatus for forming submicron patterns on films |
| 06/28/2001 | WO2001047002A2 Pendeoepitaxial gallium nitride layers grown on weak posts |
| 06/28/2001 | WO2001047000A2 Thin capacitive structures and methods for making the same |
| 06/28/2001 | WO2001046999A2 Method and apparatus for supercritical processing of a workpiece |
| 06/28/2001 | WO2001046998A1 Bowl, spin, rinse, and dry module, and method for loading a semiconductor wafer into a spin, rinse, and dry module |
| 06/28/2001 | WO2001046997A1 Hollow core spindle and spin, rinse, and dry module including the same |
| 06/28/2001 | WO2001046996A2 Substrate holder |
| 06/28/2001 | WO2001046995A1 Device for treating substrates |
| 06/28/2001 | WO2001046994A1 Device and method for treating substrates |
| 06/28/2001 | WO2001046993A2 Reduction of plasma charge-induced damage in microfabricated devices |
| 06/28/2001 | WO2001046992A2 Optical method for the determination of grain orientation in films |
| 06/28/2001 | WO2001046989A2 Decoupling capacitors for thin gate oxides |
| 06/28/2001 | WO2001046987A2 Inkjet-fabricated integrated circuits |
| 06/28/2001 | WO2001046973A1 Method for production of a regular multi-layer construction, in particular for electrical double layer capacitors and the corresponding device |
| 06/28/2001 | WO2001046971A1 Multi-layer inductor and transformer formed on an integrated circuit substrate |
| 06/28/2001 | WO2001046963A1 Polycarbosilane adhesion promoters for low dielectric constant polymeric materials |
| 06/28/2001 | WO2001046680A2 Reticle for use in photolithography and methods for making same and inspecting |
| 06/28/2001 | WO2001046674A1 Apparatus for evaluating electrical characteristics |
| 06/28/2001 | WO2001046664A2 Method for producing micromechanical structures |
| 06/28/2001 | WO2001046643A1 Scanning force microscope probe cantilever with reflective structure |
| 06/28/2001 | WO2001046498A2 Chemical vapor deposition reactor and process chamber for said reactor |
| 06/28/2001 | WO2001046494A1 Electroless plating solution and method of forming wiring with the same |
| 06/28/2001 | WO2001046491A1 Film forming device |
| 06/28/2001 | WO2001046490A1 Method of cleaning and conditioning plasma reaction chamber |
| 06/28/2001 | WO2001046489A1 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
| 06/28/2001 | WO2001045901A1 Apparatus for performing chemical-mechanical planarization |
| 06/28/2001 | WO2001045864A1 Low temperature process for high density thin film integrated capacitors, and amorphously frustrated ferroelectric materials therefor |
| 06/28/2001 | WO2001045565A2 Modeling and testing of an integrated circuit |
| 06/28/2001 | WO2001045501A2 GROWTH OF ULTRATHIN NITRIDE ON Si(100) BY RAPID THERMAL N2 TREATMENT |
| 06/28/2001 | WO2001045483A2 Method for the preparation of pure citalopram |
| 06/28/2001 | WO2001039251A9 High performance output buffer with esd protection |
| 06/28/2001 | WO2001006546A9 Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration |
| 06/28/2001 | WO2001004949A9 Nand type flash memory device |
| 06/28/2001 | WO2001004941B1 Fabrication process for dishing-free cu damascene structures |
| 06/28/2001 | WO2000079570A3 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 06/28/2001 | WO2000077830A3 A method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
| 06/28/2001 | WO2000074133A3 Method for curing thermally curable underfill material |
| 06/28/2001 | WO2000003072A9 Method and apparatus for copper plating using electroless plating and electroplating |
| 06/28/2001 | WO1999066546A9 Method and apparatus for improving die planarity and global uniformity of semiconductor wafers in a chemical mechanical polishing context |
| 06/28/2001 | US20010005799 Method, program storage device, and apparatus for optimizing and analyzing efficiency of equipment |
| 06/28/2001 | US20010005669 Multi-wafer polishing tool |
| 06/28/2001 | US20010005667 CMP platen with patterned surface |
| 06/28/2001 | US20010005666 Chemical mechanical polishing methods |
| 06/28/2001 | US20010005640 Holding semiconductor pellet on positioning stage by first suction force with which positioning claw can move semiconductor pellet during positioning of pellet, holding pellet to positioning stage by strong suction force |
| 06/28/2001 | US20010005639 Method for coating a resist film and resist coater |
| 06/28/2001 | US20010005638 Method for removing photoresist layer |
| 06/28/2001 | US20010005637 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005636 Method of etching silicon nitride film and method of producing semiconductor device |
| 06/28/2001 | US20010005635 Performing ashing by the use of a plasma of a mixed gas of oxygen and nitrogen |
| 06/28/2001 | US20010005634 Forming recessed portion having aspect ratio of 0.5 or more in etching region of layer to be etched and etching portion of layer which corresponds to recessed portion by making use of etching gas containing difluoroethylene |
| 06/28/2001 | US20010005633 Providing in core and monitor areas a select oxide layer, a select gate layer, an insulating layer, a control gate layer, and a cap layer on the substrate, placing a mask over core and monitor areas, performing second gate etch |
| 06/28/2001 | US20010005632 Laminating a first insulating layer containing carbon and a second insulating layer containing carbon on a substrate, patterning the second insulating layer into a preset shape, forming grooves in first layer by etching with reactive gas |
| 06/28/2001 | US20010005631 Method for manufacturing an electrode of a capacitor |
| 06/28/2001 | US20010005630 Method of filling gap by use of high density plasma oxide film and deposition apparatus therefor |
| 06/28/2001 | US20010005629 Depositing barrier/wetting layer over surfaces of aperture, the barrier/wetting layer comprising tantalum, tantalum nitride, tungsten, tungsten nitride, and combinations thereof, depositing a conformal metal layer over the surface |
| 06/28/2001 | US20010005628 Method of fabricating semiconductor device |
| 06/28/2001 | US20010005627 Semiconductor device and method of fabricating the same |
| 06/28/2001 | US20010005626 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005625 Interconnect structure with gas dielectric compatible with unlanded vias |
| 06/28/2001 | US20010005624 Semiconductor integrated circuit device and process for manufacturing the same |
| 06/28/2001 | US20010005623 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005622 Method for manufacturing gate electrode with vertical side profile |
| 06/28/2001 | US20010005621 Small grain size, conformal aluminum interconnects and method for their formation |
| 06/28/2001 | US20010005620 Process for manufacturing semiconductor device |
| 06/28/2001 | US20010005618 Using epitaxial growth technique to construct lines of required fineness |
| 06/28/2001 | US20010005617 Dicing configuration for separating a semiconductor component from a semiconductor wafer |
| 06/28/2001 | US20010005616 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005615 Method for manufacturing shallow trench isolation in semiconductor device |
| 06/28/2001 | US20010005614 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005613 Semiconductor device and method of fabricating the same |
| 06/28/2001 | US20010005612 Next generation semiconductor memory devices of >256M grade by forming an amorphous tantalum oxynitride thin film over the lower electrode, heating in ammonia to form tantalum nitride (stoichiometric) with a film of high dielectric |
| 06/28/2001 | US20010005611 Method of manufacturing semiconductor device |
| 06/28/2001 | US20010005610 Semiconductor device having metal silicide film and manufacturing method thereof |
| 06/28/2001 | US20010005609 Semiconductor device having a capacitor and method for the manufacture thereof |
| 06/28/2001 | US20010005608 Method for semiconductor manufacturing |
| 06/28/2001 | US20010005607 A liquid crystal display having the insulator film and display electrode surfaces contain an impurity having high electronegativity to prevent transmission of moisture and gas and stabilizing the display electrode (indium tin oxide) |
| 06/28/2001 | US20010005606 Laser irradiation apparatus and method of fabricating a semiconductor device |
| 06/28/2001 | US20010005605 High-temperature heat treatment of the oxidized film to drive out contamination acquired from the doped layer beneath to improve the quality of the oxidized film such as durability against a high voltage |