| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 06/28/2001 | US20010005604 Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same |
| 06/28/2001 | US20010005603 IC-card manufacturing apparatus |
| 06/28/2001 | US20010005602 Multi-chip bonding method and apparatus |
| 06/28/2001 | US20010005601 Semiconductor Package Having Semiconductor Chip Within Central Aperture Of Substrate |
| 06/28/2001 | US20010005600 Method of manufacturing semiconductor device including semiconductor elements mounted on base plate |
| 06/28/2001 | US20010005599 Member for mounting of semiconductor and a method for producing thereof |
| 06/28/2001 | US20010005597 Method for manufacturing fringe field switching mode liquid crystal display device |
| 06/28/2001 | US20010005596 Method for manufacturing thin film transistor liquid crystal display |
| 06/28/2001 | US20010005595 Holding a semiconductor wafer during microlithography, especially in a vacuum environment, by an electrostatic force generated by an electrode; a channel configured for heat exchanging gas flow after controller confirms adhesion |
| 06/28/2001 | US20010005566 Mask pattern correction method, mask pattern creation system using the correction method, and computer-readable recording medium |
| 06/28/2001 | US20010005565 Exposing the photoresist layer to a first pattern-defining light using a first mask; and exposing the photoresist layer to a second pattern defining light using a second mask; forming two dimensional random pattern |
| 06/28/2001 | US20010005564 Comprising a transparent substrate and a halftone phase shift film provided on the substrate, which has a multilayer construction in which first layer is capable of being etched with chlorinated gas and second layer with a fluorinated gas |
| 06/28/2001 | US20010005546 By plasma assisted chemical vapor deposition of an organosilicon compound and oxidizing gas using radio frequency power to generate reactive oxygen atoms; controlled carbon content; improved dual damascene process |
| 06/28/2001 | US20010005476 Processing method and processing unit for substrate |
| 06/28/2001 | US20010005332 Non- volatile semiconductor memory device and method of forming the same |
| 06/28/2001 | US20010005330 Nand-type flash memory device and method of operating the same |
| 06/28/2001 | US20010005329 Failure-analyzing semiconductor device and semiconductor device manufacturing method using the same |
| 06/28/2001 | US20010005328 Non-volatile semiconductor memory device |
| 06/28/2001 | US20010005325 Semiconductor memory device |
| 06/28/2001 | US20010005314 Interconnection process for module assembly and rework |
| 06/28/2001 | US20010005302 Clipping device with a negative resistance |
| 06/28/2001 | US20010005286 Optical system for crystallization tool |
| 06/28/2001 | US20010005265 Substrate film thickness measurement method, substrate film thickness measurement apparatus and substrate processing apparatus |
| 06/28/2001 | US20010005227 Solid-state imaging device |
| 06/28/2001 | US20010005163 Semiconductor integrated circuit |
| 06/28/2001 | US20010005153 Semiconductor integrated circuit |
| 06/28/2001 | US20010005148 Semiconductor intergrated circuit having logic circuit comprising transistors with lower threshold voltage values and improved pattern layout |
| 06/28/2001 | US20010005144 Configuration for testing a multiplicity of semiconductor chips |
| 06/28/2001 | US20010005119 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly |
| 06/28/2001 | US20010005060 Resin for sealing semiconductor device, resin-sealed semiconductor device and the method of manufacturing the semiconductor device |
| 06/28/2001 | US20010005059 Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor |
| 06/28/2001 | US20010005058 Integrated circuit and method |
| 06/28/2001 | US20010005056 Multiple seed layers for metallic interconnects |
| 06/28/2001 | US20010005055 Semiconductor device and manufacturing method thereof |
| 06/28/2001 | US20010005054 Method of forming a ball bond using a bonding capillary |
| 06/28/2001 | US20010005053 Electronic part, an electronic part mounting element and an process for manufacturing such the articles |
| 06/28/2001 | US20010005050 Semiconductor device, method making the same, and electronic device using the same |
| 06/28/2001 | US20010005047 Flip chip C4 extension structure and process |
| 06/28/2001 | US20010005046 Direct contact through hole type wafer structure |
| 06/28/2001 | US20010005045 Integrated circuit chip and method for fabricating the same |
| 06/28/2001 | US20010005044 Microelectronic assemblies having exposed conductive terminals and methods therefor |
| 06/28/2001 | US20010005043 Semiconductor device and a method of manufacturing the same |
| 06/28/2001 | US20010005039 Method and apparatus for delivering electrical power to a semiconductor die |
| 06/28/2001 | US20010005038 Integrated circuit chip and method for fabricating the same |
| 06/28/2001 | US20010005037 Semiconductor device having a multilayer interconnection structure |
| 06/28/2001 | US20010005035 Bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity and process of fabrication thereof |
| 06/28/2001 | US20010005033 Semiconductor device and its manufacture |
| 06/28/2001 | US20010005031 Power semiconductor device |
| 06/28/2001 | US20010005030 Semiconductor device and fabrication method |
| 06/28/2001 | US20010005029 Semiconductor device lacking steeply rising structures and fabrication method of the same |
| 06/28/2001 | US20010005026 Conductive thin film, a capacitor using the same and a method of manufacturing. |
| 06/28/2001 | US20010005025 Heterojunction bipolar transistor and its fabrication method |
| 06/28/2001 | US20010005023 Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
| 06/28/2001 | US20010005022 Semiconductor device |
| 06/28/2001 | US20010005020 Thin film transistor and method of fabricating the same |
| 06/28/2001 | US20010005019 Active matrix display device |
| 06/28/2001 | US20010005016 Field effect transistor |
| 06/28/2001 | US20010005011 Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same |
| 06/28/2001 | US20010005009 A slurry for chemical mechanical polishing a copper-containing metal film, comprising theta -alumina mainly comprising secondary particles made of aggregated primary particles as polishing grains, an oxidizer and an organic acid |
| 06/28/2001 | US20010004993 Document folder and method |
| 06/28/2001 | US20010004991 Wire bonding method and apparatus |
| 06/28/2001 | US20010004990 Rework and underfill nozzle for electronic components |
| 06/28/2001 | US20010004965 Useful for electroplating a pin grid array package having multiple pins, which are electrically connected with less physical contact; reduces damage to the pin caused by removal of the pin from the apparatus after electroplating |
| 06/28/2001 | US20010004934 Compressed mesh wick, method for manufacturing same, and plate type heat pipe including compressed mesh wick |
| 06/28/2001 | US20010004923 Modifying polyamide with alkylcarboxylated polyolefin compatibilizer; blow molding |
| 06/28/2001 | US20010004921 Methods and apparatus for determining an etch endpoint in a plasma processing system |
| 06/28/2001 | US20010004920 Provides shields for shielding the interior surface of the reactor pumping annulus from the plasma by preventing plasma from flowing through gap between wafer pedestal and the chamber sidewall without obstructing free flow of natural gas |
| 06/28/2001 | US20010004916 Allowing setting of constant time for base film to pass through drying section even if length of resin film forming region differs |
| 06/28/2001 | US20010004899 Substrate processing method and apparatus |
| 06/28/2001 | US20010004898 For processing semiconductor wafers |
| 06/28/2001 | US20010004880 Pedestal with a thermally controlled platen |
| 06/28/2001 | US20010004879 Integrated temperature controlled exhaust and cold trap assembly |
| 06/28/2001 | US20010004878 For photolithography process for use in manufacturing semiconductors |
| 06/28/2001 | US20010004852 Transfer arm |
| 06/28/2001 | US20010004807 Vacuum processing apparatus and operating method therefor |
| 06/28/2001 | US20010004802 Assembling a stacked die package |
| 06/28/2001 | US20010004790 Electrical connections to dielectric materials |
| 06/28/2001 | DE19963281A1 Verfahren zum Herstellen von Leiterbahnen A method for producing conductor tracks |
| 06/28/2001 | DE19962136A1 Etching mixture used in production of structured surfaces on multi-crystalline, tri-crystalline and monocrystalline silicon surfaces of solar cells contains hydrofluoric acid and mineral acids selected from nitric acid |
| 06/28/2001 | DE19961675A1 Bauteil mit Dünnschichtschaltkreis mit trimmbarem Kondensator Component with thin-film circuit with capacitor trimmbarem |
| 06/28/2001 | DE19961180A1 Dünnschichtwiderstand mit hohem Temperaturkoeffizienten als passives Halbleiterbauelement für integrierte Schaltungen und Herstellungsverfahren Thin film resistor with a high temperature coefficient as a passive semiconductor device for integrated circuits and methods of manufacture |
| 06/28/2001 | DE19960573A1 Method for removing solid residual matter on surfaces of semiconductor layers occurring during wet etching involves chemical dipping, a first quick rinse with DI water, turning layers at a preset angle and a second quick rinse. |
| 06/28/2001 | DE19960563A1 Semiconductor structure used in integrated circuits comprises conducting pathway folded in trenches in such a way that its length within each trench is double depth of trench |
| 06/28/2001 | DE19959966A1 Dielectric layer formation for semiconductor interconnections includes forming dielectric layer over substrate carrying conductive structure using high density plasma chemical vapor deposition to form air gaps between conductive structures |
| 06/28/2001 | DE19959182A1 Verfahren zum Herstellen eines optoelektronischen Bauelements A method for producing an optoelectronic component |
| 06/28/2001 | DE19957122A1 Production of a ferroelectric capacitor on a semiconductor substrate comprises depositing a ferroelectric capacitor material over a first electrode, producing a second electrode and applying an alternating voltage on the capacitor |
| 06/28/2001 | DE19956733A1 Verfahren zur Regelung von Sputterprozessen The method for controlling sputtering |
| 06/28/2001 | DE19955280C1 Kontaktstruktur für ein elektrisch betriebenes II/VI-Halbleiterbauelement und Verfahren zu deren Herstellung Contact structure for an electrically operated II / VI semiconductor device and process for their preparation |
| 06/28/2001 | DE10064654A1 Ruthenium layer, useful for the production of capacitors, has a high oxygen concentration towards the surface of the underlayer and a lower value in the direction of the outer coating surface . |
| 06/28/2001 | DE10064042A1 Copper wiring production comprises forming intermediate insulating layer on semiconductor layer, forming contact hole and trench, depositing copper and chemical-mechanical polishing |
| 06/28/2001 | DE10064041A1 Copper wiring production comprises forming intermediate insulating layer on semiconductor layer, forming contact hole and trench, depositing copper seed layer, plating with copper and chemical-mechanical polishing |
| 06/28/2001 | DE10063263A1 Organisches nicht reflektierendes Beschichtungspolymer und dessen Herstellungsverfahren Organic non-reflective coating polymer and its production method |
| 06/28/2001 | DE10063239A1 Optical projection system to form a circuit design on a wafer substrate has a lamp with vacuum ultra violet light to illuminate a lined plate with a diffraction unit of quartz glass in the optical projection assembly |
| 06/28/2001 | DE10063064A1 Positive resist composition, useful for the processing of semiconductors, contains a resin derived from (meth)acrylic acid dihydroxy-1-adamantyl ester and (meth)acrylic acid-alkyl-2-adamantyl ester |
| 06/28/2001 | DE10051599A1 Semiconductor device with an improved contact pin structure and method for producing it places a conductive contact pin in an intermediate insulating film layer and on an insulating layer to insulate semiconductor elements. |
| 06/28/2001 | DE10051584A1 Photolithographic mask for manufacture of semiconductor circuits has pattern edges distributed on corresponding monitoring markings |
| 06/28/2001 | DE10050357A1 Trench insulating structure used in the production of a semiconductor device comprises a trench formed in the non-active zones of a semiconductor substrate, an inner wall oxide film |
| 06/28/2001 | DE10041620A1 Capacitor element used for a semiconductor storage device comprises an insulating layer, recesses divided by a separating wall, storage node layers formed on the surface of the recesses, a dielectric capacitor layer and a cell plate layer |
| 06/28/2001 | DE10032210A1 Kondensator für Halbleiterspeicherbauelement und Verfahren zu dessen Herstellung Capacitor for the semiconductor memory device and method for its production |
| 06/28/2001 | DE10004872C1 Metal oxide semiconductor field effect transistor arrangement has source, drain and gates embedded between a column protruding from semiconductor body and insulator surrounding the column and arranged on body |