Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2001
07/10/2001US6259163 Bond pad for stress releif between a substrate and an external substrate
07/10/2001US6259162 Method for reducing capactive coupling between conductive lines
07/10/2001US6259160 Apparatus and method of encapsulated copper (Cu) Interconnect formation
07/10/2001US6259159 Reflowed solder ball with low melting point metal cap
07/10/2001US6259158 Semiconductor device utilizing an external electrode with a small pitch connected to a substrate
07/10/2001US6259156 Semiconductor device and method for manufacturing same
07/10/2001US6259154 Semiconductor device and method of manufacturing the same
07/10/2001US6259151 Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors
07/10/2001US6259150 Voltage dividing resistor and voltage dividing circuit
07/10/2001US6259149 Fully isolated thin-film trench capacitor
07/10/2001US6259148 Modular high frequency integrated circuit structure
07/10/2001US6259147 Semiconductor device having a fuse layer
07/10/2001US6259145 Reduced leakage trench isolation
07/10/2001US6259144 Electronic memory structure
07/10/2001US6259143 Semiconductor memory device of NOR type mask ROM and manufacturing method of the same
07/10/2001US6259142 Multiple split gate semiconductor device and fabrication method
07/10/2001US6259141 Insulated gate field effect semiconductor device and forming method thereof
07/10/2001US6259138 Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
07/10/2001US6259137 Defect induced buried oxide (DIBOX) for throughput SOI
07/10/2001US6259135 MOS transistors structure for reducing the size of pitch limited circuits
07/10/2001US6259133 Method for forming an integrated circuit memory cell and product thereof
07/10/2001US6259132 Array of electrically programmable non-volatile semiconductor memory cells comprising ROM memory cells
07/10/2001US6259131 Poly tip and self aligned source for split-gate flash cell
07/10/2001US6259130 High density flash memories with high capacitive-couping ratio and high speed operation
07/10/2001US6259129 Strap with intrinsically conductive barrier
07/10/2001US6259128 Metal-insulator-metal capacitor for copper damascene process and method of forming the same
07/10/2001US6259127 Integrated circuit container having partially rugged surface
07/10/2001US6259126 Low cost mixed memory integration with FERAM
07/10/2001US6259125 Scalable high dielectric constant capacitor
07/10/2001US6259122 Group III nitride semiconductor light-emitting device having anticracking feature
07/10/2001US6259120 Semiconductor device and method for fabricating the same
07/10/2001US6259119 Liquid crystal display and method of manufacturing the same
07/10/2001US6259118 Ultra high density NOR gate using a stacked transistor arrangement
07/10/2001US6259115 Dummy patterning for semiconductor manufacturing processes
07/10/2001US6259106 Apparatus and method for controlling a beam shape
07/10/2001US6259105 System and method for cleaning silicon-coated surfaces in an ion implanter
07/10/2001US6259094 Electron beam inspection method and apparatus
07/10/2001US6259072 Zone controlled radiant heating system utilizing focused reflector
07/10/2001US6259066 Process and device for processing a material by electromagnetic radiation in a controlled atmosphere
07/10/2001US6259062 Process chamber cooling
07/10/2001US6259061 Vertical-heat-treatment apparatus with movable lid and compensation heater movable therewith
07/10/2001US6259058 Apparatus for separating non-metallic substrates
07/10/2001US6259038 Semiconductor chip mounting board and method of inspecting the same mounting board
07/10/2001US6259037 Polytetrafluoroethylene thin film chip carrier
07/10/2001US6259036 Method for fabricating electronic assemblies using semi-cured conductive elastomeric bumps
07/10/2001US6258735 Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber
07/10/2001US6258734 Method for patterning semiconductor devices on a silicon substrate using oxynitride film
07/10/2001US6258733 Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size
07/10/2001US6258732 Method of forming a patterned organic dielectric layer on a substrate
07/10/2001US6258731 Method for fabricating oxide film
07/10/2001US6258730 Ultra-thin gate oxide formation using an N2O plasma
07/10/2001US6258729 Oxide etching method and structures resulting from same
07/10/2001US6258728 Plasma etching methods
07/10/2001US6258727 Method of forming metal lands at the M0 level with a non selective chemistry
07/10/2001US6258726 Method of forming isolation film for semiconductor devices
07/10/2001US6258725 Method for forming metal line of semiconductor device by (TiA1)N anti-reflective coating layer
07/10/2001US6258724 Low dielectric constant dielectric films and process for making the same
07/10/2001US6258723 Dry etching method and a TFT fabrication method
07/10/2001US6258722 Method of manufacturing CMOS device
07/10/2001US6258721 Diamond slurry for chemical-mechanical planarization of semiconductor wafers
07/10/2001US6258720 Method of formation of conductive lines on integrated circuits
07/10/2001US6258719 Intermetallic aluminides and silicides articles, such as sputtering targets, and methods of making same
07/10/2001US6258718 Method for reducing surface charge on semiconductor wafers to prevent arcing during plasma deposition
07/10/2001US6258717 Method to produce high quality metal fill in deep submicron vias and lines
07/10/2001US6258716 CVD titanium silicide for contact hole plugs
07/10/2001US6258715 Process for low-k dielectric with dummy plugs
07/10/2001US6258714 Self-aligned contacts for salicided MOS devices
07/10/2001US6258713 Method for forming dual damascene structure
07/10/2001US6258712 Method for forming a borderless contact
07/10/2001US6258711 Sacrificial deposit to improve damascene pattern planarization in semiconductor wafers
07/10/2001US6258710 Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
07/10/2001US6258709 Formation of electrical interconnect lines by selective metal etch
07/10/2001US6258708 Method of fabricating gate contact pods, load lines and wiring structures using a minimum number of etching steps
07/10/2001US6258707 Triple damascence tungsten-copper interconnect structure
07/10/2001US6258705 Method of forming circuit probing contact points on fine pitch peripheral bond pads on flip chip
07/10/2001US6258704 Methods for fabricating dimpled contacts for metal-to-semiconductor connections
07/10/2001US6258703 Reflow of low melt solder tip C4's
07/10/2001US6258702 Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method
07/10/2001US6258701 Process for forming insulating structures for integrated circuits
07/10/2001US6258700 Silicide agglomeration fuse device
07/10/2001US6258698 Process for producing semiconductor substrate
07/10/2001US6258697 Method of etching contacts with reduced oxide stress
07/10/2001US6258696 System and method for fabricating semiconductor device and isolation structure thereof
07/10/2001US6258695 Dislocation suppression by carbon incorporation
07/10/2001US6258694 Fabrication method of a device isolation structure
07/10/2001US6258693 Ion implantation for scalability of isolation in an integrated circuit
07/10/2001US6258692 Method forming shallow trench isolation
07/10/2001US6258691 Cylindrical capacitor and method for fabricating same
07/10/2001US6258690 Method of manufacturing semiconductor device
07/10/2001US6258689 Low resistance fill for deep trench capacitor
07/10/2001US6258688 Method to form a high Q inductor
07/10/2001US6258686 Manufacturing method of semiconductor device and semiconductor device
07/10/2001US6258685 Method of manufacturing hetero-junction bipolar transistor
07/10/2001US6258684 Method of fabricating semiconductor memory device having a soi structure
07/10/2001US6258683 Local interconnection arrangement with reduced junction leakage and method of forming same
07/10/2001US6258682 Method of making ultra shallow junction MOSFET
07/10/2001US6258681 Use of a rapid thermal anneal process to control drive current
07/10/2001US6258680 Integrated circuit gate conductor which uses layered spacers to produce a graded junction
07/10/2001US6258679 Sacrificial silicon sidewall for damascene gate formation
07/10/2001US6258678 Use of a wet etch dip step used as part of a self-aligned contact opening procedure