| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 06/19/2001 | US6248175 Nozzle arm movement for resist development |
| 06/19/2001 | US6248171 Yield and line width performance for liquid polymers and other materials |
| 06/19/2001 | US6248144 Process for producing polishing composition |
| 06/19/2001 | US6248009 Apparatus for cleaning substrate |
| 06/19/2001 | US6248001 Semiconductor die de-processing using a die holder and chemical mechanical polishing |
| 06/19/2001 | US6247998 Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
| 06/19/2001 | US6247986 Method for precise molding and alignment of structures on a substrate using a stretchable mold |
| 06/19/2001 | US6247889 Multiple-shaft power transmission apparatus and wafer transport arm link |
| 06/19/2001 | US6247853 Incremental method for critical area and critical region computation of via blocks |
| 06/19/2001 | US6247640 Conductive particle arranging device and conductive particle transferring method using the same |
| 06/19/2001 | US6247637 Method of integrated circuit assembly |
| 06/19/2001 | US6247597 Semiconductor wafer accommodating jig |
| 06/19/2001 | US6247579 Substrate transfer apparatus and method of substrate transfer |
| 06/19/2001 | US6247481 Apparatus and method for wet cleaning or etching a flat substrate |
| 06/19/2001 | US6247479 Washing/drying process apparatus and washing/drying process method |
| 06/19/2001 | US6247425 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor |
| 06/19/2001 | US6247368 CMP wet application wafer sensor |
| 06/19/2001 | US6247245 Processing unit for substrate manufacture |
| 06/19/2001 | US6247229 Method of forming an integrated circuit device package using a plastic tape as a base |
| 06/19/2001 | US6247227 Apparatus for assembling parts in a carrier strip |
| 06/19/2001 | US6247221 Method for sealing and/or joining an end of a ceramic filter |
| 06/19/2001 | US6247198 Cleaning apparatus |
| 06/19/2001 | US6247197 Brush interflow distributor |
| 06/14/2001 | WO2001043518A1 Chip package with molded underfill |
| 06/14/2001 | WO2001043282A1 Variable load switchable impedance matching system |
| 06/14/2001 | WO2001043267A1 Power supply with flux-controlled transformer |
| 06/14/2001 | WO2001043201A1 Semiconductor device with a diode, and method of manufacturing such a device |
| 06/14/2001 | WO2001043200A1 Controllable semiconductor switching element that blocks in both directions |
| 06/14/2001 | WO2001043198A2 Source/drain-on-insulator (s/doi) field effect transistor using silicon nitride and silicon oxide and method of fabrication |
| 06/14/2001 | WO2001043197A2 Source/drain-on-insulator (s/doi) field effect transistors and method of fabrication |
| 06/14/2001 | WO2001043194A1 Intelligent gate-level fill methods for reducing global pattern density effects |
| 06/14/2001 | WO2001043188A1 Electronic part module, method of producing the same, etc. |
| 06/14/2001 | WO2001043187A2 Removal of silicon oxynitride material using a wet chemical process after gate etch processing |
| 06/14/2001 | WO2001043186A1 Body contacted silicon-on-insulator (soi) structure and method of fabrication |
| 06/14/2001 | WO2001043185A1 Method of fabricating an optoelectronic device |
| 06/14/2001 | WO2001043184A2 Electrostatic chucks with flat film electrode |
| 06/14/2001 | WO2001043183A2 Electrostatic chuck, susceptor and method for fabrication |
| 06/14/2001 | WO2001043182A1 Mold release film for sealing semiconductor element and sealing method for semiconductor element using it |
| 06/14/2001 | WO2001043181A1 Methods for producing packaged integrated circuit devices & packaged integrated circuit devices produced thereby |
| 06/14/2001 | WO2001043180A1 Thin film transistor and method of manufacturing the same |
| 06/14/2001 | WO2001043179A2 Method for producing a crystallized ceramic layer by means of laser annealing |
| 06/14/2001 | WO2001043177A1 Method for establishing ultra-thin gate insulator using anneal in ammonia |
| 06/14/2001 | WO2001043176A1 Semiconductor device having a self-aligned contact structure and methods of forming the same |
| 06/14/2001 | WO2001043175A1 Ultra-shallow junction using a dopant layer having a peak concentration within a dielectric layer |
| 06/14/2001 | WO2001043174A2 Fabrication of gallium nitride layers on textured silicon substrates |
| 06/14/2001 | WO2001043172A1 Passivated silicon carbide devices with low leakage current and method of fabricating |
| 06/14/2001 | WO2001043171A1 Method for producing a hard mask |
| 06/14/2001 | WO2001043170A2 Dynamic brake for non-contact wafer holder |
| 06/14/2001 | WO2001043169A2 Methods for separating microcircuit dies from wafers |
| 06/14/2001 | WO2001043168A2 Method for handling semiconductor substrates during processing and/or machining |
| 06/14/2001 | WO2001043165A2 Oxide films containing p-type dopant and process for preparing same |
| 06/14/2001 | WO2001043157A1 Ion implantation ion source, system and method |
| 06/14/2001 | WO2001042994A2 Modification of integrated circuits |
| 06/14/2001 | WO2001042858A1 Device and method in connection with the production of structures |
| 06/14/2001 | WO2001042855A2 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range |
| 06/14/2001 | WO2001042853A2 Photoresist composition for deep uv radiation |
| 06/14/2001 | WO2001042820A2 Method of making optoelectronic devices using sacrificial devices |
| 06/14/2001 | WO2001042767A2 Detecting a process endpoint from a change in reflectivity |
| 06/14/2001 | WO2001042766A2 Method and production of a sensor |
| 06/14/2001 | WO2001042727A2 Method, apparatus, and composition for drying solid articles |
| 06/14/2001 | WO2001042694A2 Distribution system of modular process lines |
| 06/14/2001 | WO2001042539A1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
| 06/14/2001 | WO2001042529A1 METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM |
| 06/14/2001 | WO2001042526A1 Plasma processing container internal member and production method therefor |
| 06/14/2001 | WO2001042163A2 High-purity low-resistivity electrostatic chucks |
| 06/14/2001 | WO2001041973A2 Chemical-mechanical polishing method |
| 06/14/2001 | WO2001041963A2 Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods |
| 06/14/2001 | WO2001041962A2 Non-contact workpiece holder |
| 06/14/2001 | WO2001041959A2 Monitoring system for dicing saws |
| 06/14/2001 | WO2001041946A1 Cleaning of material surfaces using gas |
| 06/14/2001 | WO2001041544A2 Deposition of gate stacks including silicon germanium layers |
| 06/14/2001 | WO2001029885A3 Method for production of a capacitor electrode with a barrier structure |
| 06/14/2001 | WO2001018849A3 Integrated circuit arrangement with at least a capacitor and a method for the production of the said |
| 06/14/2001 | WO2001011672A8 Method of etching a layer using sacrificial elements |
| 06/14/2001 | WO2001002133A3 Improvement in and relating to edge grinding |
| 06/14/2001 | WO2000078654A9 Improved wafer handling apparatus |
| 06/14/2001 | WO2000074116A3 Apparatus and methods for drying batches of disks |
| 06/14/2001 | US20010003700 CMP slurry recycling apparatus and method for recycling CMP slurry |
| 06/14/2001 | US20010003698 Polishing machine having a plurality of abrasive pads |
| 06/14/2001 | US20010003680 Process for the wet chemical treatment of semiconductor wafers |
| 06/14/2001 | US20010003679 Made of silicon nitride with hydrogen incorporated therein by increasing ammonia flow or decreasing silane flow during a plasma enhanced chemical vapor deposition; use in silicon oxide dry fluorine etch; integrated circuits |
| 06/14/2001 | US20010003678 Oxide plasma etching process with a controlled wineglass shape |
| 06/14/2001 | US20010003677 Making a low-resistance contact by placing a cadmium sulfide/cadmium telleride layer into chamber, evacuating, filling with argon, generating plasma ignition by energizing a cathode |
| 06/14/2001 | US20010003676 Cobalt silicide etch process and apparatus |
| 06/14/2001 | US20010003675 Method for manufacturing a semiconductor device |
| 06/14/2001 | US20010003674 Method of manufacturing bottom electrode of capacitor |
| 06/14/2001 | US20010003672 For low resistance silicon wafers, comprising water, an abrasive and as additive one or more of: an alkali metal hydroxide, carbonate, or hydrogen carbonate, a quaternary ammonium salt, a peroxide, and a peroxoacid compound |
| 06/14/2001 | US20010003671 By forming a silicon film doped with impurities on a semiconductor substrate, forming a refractory metal film on the silicon film and siliciding by heat treatment to form a refractory metal silicide film |
| 06/14/2001 | US20010003670 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same |
| 06/14/2001 | US20010003669 Processing methods of forming an electrically conductive plug to a node location |
| 06/14/2001 | US20010003668 Applying a force asymmetric with respect to the interface between first and second members, to the end portion of the composite member to form a crack; growing crack along the separation layer to separate the member; silicon on insulator |
| 06/14/2001 | US20010003667 Forming a polysilicon structure on a layer of the transistor; and substituting metal for at least a portion of the polysilicon structure |
| 06/14/2001 | US20010003666 By using a combination of arsenic and phosphorus to tailor the lateral profile to meet both series resistance and channel hot carrier requirements; relatively higher dose of arsenic |
| 06/14/2001 | US20010003665 In which dummy plate electrodes and charge storage electrodes of the same height as the stacked capacitor are formed at the logic circuit region when the stacked capacitor are formed at the memory cell region; forming fine interconnection lines |
| 06/14/2001 | US20010003664 Semiconductor device and method for manufacturing same |
| 06/14/2001 | US20010003663 Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device |
| 06/14/2001 | US20010003662 Semiconductor device and method of manufacturing thereof |
| 06/14/2001 | US20010003661 Forming a silicon nitride (Si3N4) capacitor dielectric layer over electrode, then oxidizing it in the presence of a chlorine containing atmosphere to form a silicon oxynitride layer containing chlorine, forming second capacitor electrode |
| 06/14/2001 | US20010003660 Forming well layer through high energy ion implantation, so the n-type buried layer is suppressed from being enlarged, reducing time required for forming the trench |
| 06/14/2001 | US20010003659 Method of manufacturing a semiconductor device |