Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2001
08/28/2001US6281126 Process for manufacturing semiconductor device
08/28/2001US6281125 From vaporized (diene)ru(co)3
08/28/2001US6281124 Methods and systems for forming metal-containing films on substrates
08/28/2001US6281123 Generating a plasma adjacent the layer from a component gas, the component gas consisting essentially of n2 and/or ar; and utilizing the plasma to remove the carbon from the layer.
08/28/2001US6281122 Method for forming materials
08/28/2001US6281121 Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal
08/28/2001US6281119 Method for making contact with a semiconductor layer and semiconductor structure having a plurality of layers
08/28/2001US6281118 Method of manufacturing semiconductor device
08/28/2001US6281117 Method to form uniform silicide features
08/28/2001US6281116 Method of manufacturing a semiconductor device
08/28/2001US6281115 Sidewall protection for a via hole formed in a photosensitive, low dielectric constant layer
08/28/2001US6281114 Planarization after metal chemical mechanical polishing in semiconductor wafer fabrication
08/28/2001US6281113 Method for forming an interplayer insulating film and semiconductor device
08/28/2001US6281112 Structure of interlayer insulator film and method for planarization of interlayer insulator film
08/28/2001US6281111 Semiconductor apparatus and method for fabricating the same
08/28/2001US6281110 Method for making an integrated circuit including deutrium annealing of metal interconnect layers
08/28/2001US6281109 Advance metallization process
08/28/2001US6281107 Semiconductor device and method for manufacturing the same
08/28/2001US6281106 Method of solder bumping a circuit component
08/28/2001US6281105 Unzippable polymer selected from the group consisting of poly-alpha-methylstyrene, polypropylene carbonate, polyethylene carbonate and polychloral dissolved in said solvent
08/28/2001US6281104 Low temperature reflow method for filling high aspect ratio contacts
08/28/2001US6281103 Method for fabricating gate semiconductor
08/28/2001US6281102 Cobalt silicide structure for improving gate oxide integrity and method for fabricating same
08/28/2001US6281101 Process of forming metal silicide interconnects
08/28/2001US6281100 Semiconductor processing methods
08/28/2001US6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type
08/28/2001US6281098 Process for Polycrystalline film silicon growth
08/28/2001US6281097 Self-aligned selectively grown sige base (sssb) bipolar transistor including an epitaxial layer made of sige alloy as a base layer.
08/28/2001US6281096 Chip scale packaging process
08/28/2001US6281095 Process of manufacturing silicon-on-insulator chip having an isolation barrier for reliability
08/28/2001US6281094 Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereof
08/28/2001US6281093 Method to reduce trench cone formation in the fabrication of shallow trench isolations
08/28/2001US6281092 Method for manufacturing a metal-to-metal capacitor utilizing only one masking step
08/28/2001US6281091 Container capacitor structure and method of formation thereof
08/28/2001US6281089 Method for fabricating an embedded flash memory cell
08/28/2001US6281088 Method of manufacturing SRAM having enhanced cell ratio
08/28/2001US6281087 Process for fabricating metal silicide layer by using ion metal plasma deposition
08/28/2001US6281086 Semiconductor device having a low resistance gate conductor and method of fabrication the same
08/28/2001US6281085 Method of manufacturing a semiconductor device
08/28/2001US6281084 Disposable spacers for improved array gapfill in high density DRAMs
08/28/2001US6281083 Methods of forming field effect transistor gates, and methods of forming integrated circuitry
08/28/2001US6281082 Method to form MOS transistors with a common shallow trench isolation and interlevel dielectric gap fill
08/28/2001US6281081 Method of preventing current leakage around a shallow trench isolation structure
08/28/2001US6281080 Fabrication method in improving ESD ability and vertical BJT gain
08/28/2001US6281079 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and production process
08/28/2001US6281078 Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices
08/28/2001US6281077 Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions
08/28/2001US6281076 Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region
08/28/2001US6281075 Method of controlling of floating gate oxide growth by use of an oxygen barrier
08/28/2001US6281074 Method of manufacturing oxide layer
08/28/2001US6281073 Method for fabricating dynamic random access memory cell
08/28/2001US6281072 Multiple step methods for forming conformal layers
08/28/2001US6281071 Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring
08/28/2001US6281070 Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry
08/28/2001US6281069 Method for forming deep trench capacitor under a shallow trench isolation structure
08/28/2001US6281068 Method for buried plate formation in deep trench capacitors
08/28/2001US6281067 Self-aligned silicide process for forming silicide layer over word lines in DRAM and transistors in logic circuit region
08/28/2001US6281066 Method of manufacturing a capacitor in a memory device
08/28/2001US6281065 Semiconductor device fabrication method
08/28/2001US6281064 Method for providing dual work function doping and protective insulating cap
08/28/2001US6281063 Method for manufacturing trench isolation
08/28/2001US6281062 MOS semiconductor device with self-aligned punchthrough stops and method of fabrication
08/28/2001US6281061 Method for fabricating an isolation trench applied in BiCMOS processes
08/28/2001US6281060 Method of manufacturing a semiconductor device containing a BiCMOS circuit
08/28/2001US6281058 Method of forming DRAM circuitry on a semiconductor substrate
08/28/2001US6281057 Method of manufacturing a semiconductor device
08/28/2001US6281056 Methods of forming SOI insulator layers, methods of forming transistor devices, and semiconductor devices and assemblies
08/28/2001US6281055 Method of fabricating a thin film transistor
08/28/2001US6281054 SOI device and method for fabricating the same
08/28/2001US6281053 Thin film transistor with reduced hydrogen passivation process time
08/28/2001US6281052 Method of manufacturing semiconductor device
08/28/2001US6281051 Semiconductor device and manufacturing method thereof
08/28/2001US6281050 Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device
08/28/2001US6281049 Semiconductor device mask and method for forming the same
08/28/2001US6281048 Method of making an electronic component, and an electronic component
08/28/2001US6281047 Method of singulating a batch of integrated circuit package units constructed on a single matrix base
08/28/2001US6281046 Method of forming an integrated circuit package at a wafer level
08/28/2001US6281045 Semiconductor apparatus, manufacturing method thereof and electronic apparatus
08/28/2001US6281041 Process to make a tall solder ball by placing a eutectic solder ball on top of a high lead solder ball
08/28/2001US6281039 Hybrid device and a method of producing electrically active components by an assembly operation
08/28/2001US6281038 Methods for forming assemblies
08/28/2001US6281037 Method for the targeted production of N-type conductive areas in diamond layers by means of ion implantation
08/28/2001US6281035 Ion-beam treatment to prepare surfaces of p-CdTe films
08/28/2001US6281034 Solid-state imaging device and manufacturing method thereof and semiconductor device manufacturing method
08/28/2001US6281032 Manufacturing method for nitride III-V compound semiconductor device using bonding
08/28/2001US6281031 Method of severing a semiconductor wafer
08/28/2001US6281027 Spatial averaging technique for ellipsometry and reflectometry
08/28/2001US6281026 Semiconductor device and method for manufacturing the same
08/28/2001US6281025 Substrate removal as a function of SIMS analysis
08/28/2001US6281024 Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device
08/28/2001US6281023 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer
08/28/2001US6281022 Multi-phase lead germanate film deposition method
08/28/2001US6280924 Planarization method using fluid composition including chelating agents
08/28/2001US6280906 Method of imaging a mask pattern on a substrate by means of EUV radiation, and apparatus and mask for performing the method
08/28/2001US6280898 Photoresists patterns
08/28/2001US6280895 Silicon or germanium with light receiver layers
08/28/2001US6280828 Flexible wiring board
08/28/2001US6280799 Arranging electrode in containers with dispensers and applying a voltage
08/28/2001US6280794 Method of forming dielectric material suitable for microelectronic circuits
08/28/2001US6280790 Supporting a substrate, heating with radiation adding a purge fluid, reflection and purging