Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2001
09/04/2001US6284670 Method of etching silicon wafer and silicon wafer
09/04/2001US6284669 Power transistor with silicided gate and contacts
09/04/2001US6284668 Plasma polishing method
09/04/2001US6284666 Method of reducing RIE lag for deep trench silicon etching
09/04/2001US6284665 Method for controlling the shape of the etch front in the etching of polysilicon
09/04/2001US6284664 Semiconductor device, and manufacturing method therefor
09/04/2001US6284663 Method for making field effect devices and capacitors with thin film dielectrics and resulting devices
09/04/2001US6284662 Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process
09/04/2001US6284661 Method and apparatus for producing a wafer
09/04/2001US6284660 Method for improving CMP processing
09/04/2001US6284658 Manufacturing process for semiconductor wafer
09/04/2001US6284657 Non-metallic barrier formation for copper damascene type interconnects
09/04/2001US6284656 Copper-polymer connections
09/04/2001US6284655 Integraed circuits
09/04/2001US6284654 Chemical vapor deposition process for fabrication of hybrid electrodes
09/04/2001US6284653 Method of selectively forming a barrier layer from a directionally deposited metal layer
09/04/2001US6284652 Adhesion promotion method for electro-chemical copper metallization in IC applications
09/04/2001US6284651 Method for forming a contact having a diffusion barrier
09/04/2001US6284650 Integrated tungsten-silicide processes
09/04/2001US6284649 Chemical vapor phase growing method of a metal nitride film and a method of manufacturing an electronic device using the same
09/04/2001US6284648 Semiconductor processing method of forming a buried contact
09/04/2001US6284647 Method to improve the uniformity of chemical mechanical polishing
09/04/2001US6284646 Methods of forming smooth conductive layers for integrated circuit devices
09/04/2001US6284645 Controlling improvement of critical dimension of dual damasceue process using spin-on-glass process
09/04/2001US6284644 IMD scheme by post-plasma treatment of FSG and TEOS oxide capping layer
09/04/2001US6284642 Integrated method of damascene and borderless via process
09/04/2001US6284641 Method of forming a contact using a sacrificial spacer
09/04/2001US6284640 Manufacturing method for semiconductor device, mounting method of semiconductor device, semiconductor device, and inspecting method of semiconductor device
09/04/2001US6284639 Method for forming a structured metallization on a semiconductor wafer
09/04/2001US6284638 Manufacturing method of a semiconductor device
09/04/2001US6284637 Forming integrated circuits
09/04/2001US6284636 Tungsten gate method and apparatus
09/04/2001US6284635 Method for forming titanium polycide gate
09/04/2001US6284634 Method for forming metal line in semiconductor device
09/04/2001US6284633 Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode
09/04/2001US6284632 Method for manufacturing semiconductor device with stagnated process gas
09/04/2001US6284631 Method and device for controlled cleaving process
09/04/2001US6284630 Method for fabrication of abrupt drain and source extensions for a field effect transistor
09/04/2001US6284629 Method of fabricating an SOI wafer and SOI wafer fabricated by the method
09/04/2001US6284628 Method of recycling a delaminated wafer and a silicon wafer used for the recycling
09/04/2001US6284627 Method for wiring semi-conductor components in order to prevent product piracy and manipulation, semi-conductors component made according to this method and use of said semi-conductor component in a chip card
09/04/2001US6284626 Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trench
09/04/2001US6284625 Method of forming a shallow groove isolation structure
09/04/2001US6284624 Semiconductor device and method of manufacturing the same
09/04/2001US6284623 Method of fabricating semiconductor devices using shallow trench isolation with reduced narrow channel effect
09/04/2001US6284622 Method for filling trenches
09/04/2001US6284621 Semiconductor structure with a dielectric layer and its producing method
09/04/2001US6284620 Method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components
09/04/2001US6284619 Integration scheme for multilevel metallization structures
09/04/2001US6284618 Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall
09/04/2001US6284617 Metalization outside protective overcoat for improved capacitors and inductors
09/04/2001US6284616 Circuit and method for reducing parasitic bipolar effects during electrostatic discharges
09/04/2001US6284615 Method and apparatus for the selective doping of semiconductor material by ion implantation
09/04/2001US6284614 Method of manufacturing semiconductor device in which damage to gate insulating film can be reduced
09/04/2001US6284613 Method for forming a T-gate for better salicidation
09/04/2001US6284612 Process to fabricate ultra-short channel MOSFETs with self-aligned silicide contact
09/04/2001US6284611 Method for salicide process using a titanium nitride barrier layer
09/04/2001US6284610 Method to reduce compressive stress in the silicon substrate during silicidation
09/04/2001US6284609 Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regions
09/04/2001US6284608 Method for making accumulation mode N-channel SOI
09/04/2001US6284607 Method of making high-voltage HV transistors with drain extension in a CMOS process of the dual gate type with silicide
09/04/2001US6284606 Forming dielectric mask on semiconductor substrate; preferential dry anisotropic etching
09/04/2001US6284605 Method for fabricating semiconductor power integrated circuit
09/04/2001US6284603 Flash memory cell structure with improved channel punch-through characteristics
09/04/2001US6284602 Process to reduce post cycling program VT dispersion for NAND flash memory devices
09/04/2001US6284600 Species implantation for minimizing interface defect density in flash memory devices
09/04/2001US6284599 Method to fabricate a semiconductor resistor in embedded flash memory application
09/04/2001US6284598 Method of manufacturing a flash memory cell having inter-poly-dielectric isolation
09/04/2001US6284597 Method of fabricating flash memory
09/04/2001US6284596 Method of forming split-gate flash cell for salicide and self-align contact
09/04/2001US6284595 Method for fabricating stacked capacitor having excellent anti-oxidation property
09/04/2001US6284594 Formation of an interpoly capacitor structure using a chemical mechanical polishing procedure
09/04/2001US6284593 Method for shallow trench isolated, contacted well, vertical MOSFET DRAM
09/04/2001US6284592 Method for fabricating a semiconductor device
09/04/2001US6284591 Formation method of interconnection in semiconductor device
09/04/2001US6284590 Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors
09/04/2001US6284589 Method of fabricating concave capacitor including adhesion spacer
09/04/2001US6284588 Forming barium strontium titanate
09/04/2001US6284587 Fabricating method for semiconductor device
09/04/2001US6284586 Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following masking
09/04/2001US6284585 Electronic memory device having bit lines with block selector switches
09/04/2001US6284584 Method of masking for periphery salicidation of active regions
09/04/2001US6284583 Semiconductor device and method of manufacturing the same
09/04/2001US6284581 Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors
09/04/2001US6284580 Method for manufacturing a MOS transistor having multi-layered gate oxide
09/04/2001US6284579 Drain leakage reduction by indium transient enchanced diffusion (TED) for low power applications
09/04/2001US6284578 MOS transistors having dual gates and self-aligned interconnect contact windows
09/04/2001US6284577 Overcoating substrate with electroconductive film; activation of argon plasma; anisotropic etching using halide
09/04/2001US6284576 Manufacturing method of a thin-film transistor of a reverse staggered type
09/04/2001US6284575 Method of making a semiconductor device having fuses for repair
09/04/2001US6284573 Wafer level fabrication and assembly of chip scale packages
09/04/2001US6284572 Boat and assembly method for ball grid array packages
09/04/2001US6284570 Method of manufacturing a semiconductor component from a conductive substrate containing a plurality of vias
09/04/2001US6284569 Method of manufacturing a flexible integrated circuit package utilizing an integrated carrier ring/stiffener
09/04/2001US6284568 Method and system for producing semiconductor device
09/04/2001US6284567 Microsensor, and packaging method therefor
09/04/2001US6284566 Chip scale package and method for manufacture thereof
09/04/2001US6284565 Method of resin-encapsulating semiconductor chip and mold-releasing film used for the method
09/04/2001US6284564 HDI chip attachment method for reduced processing
09/04/2001US6284562 Thin film transistors