Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2001
09/06/2001US20010019741 Vacuum enclosure; reduced peeling
09/06/2001US20010019737 Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby
09/06/2001US20010019641 Semiconductor integrated circuit device and process for manufacturing the same
09/06/2001US20010019625 Method and apparatus for reticle inspection using aerial imaging
09/06/2001US20010019568 Optical semiconductor device and method for manufacturing the same
09/06/2001US20010019511 Semiconductor integrated circuit
09/06/2001US20010019508 Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer
09/06/2001US20010019506 Memory cell with self-aligned floating gate and separate select gate, and fabrication process
09/06/2001US20010019499 Semiconductor integrated circuit device
09/06/2001US20010019498 Ferroelectric memory capable of suppressing deterioration of dummy cells and drive method therefor
09/06/2001US20010019496 Semiconductor integrated device
09/06/2001US20010019472 Electrostatic chuck, and method of and apparatus for processing sample using the chuck
09/06/2001US20010019453 Light-transmitting optical member, manufacturing method thereof, evaluation method therefor, and optical lithography apparatus using the optical member
09/06/2001US20010019407 Method for inspecting exposure apparatus
09/06/2001US20010019404 Projection exposure system for microlithography and method for generating microlithographic images
09/06/2001US20010019403 Optical arrangement
09/06/2001US20010019401 Exposure apparatus, microdevice, photomask, and exposure method
09/06/2001US20010019400 Exposure apparatus
09/06/2001US20010019374 Active matrix substrate, method of manufacturing the same, and display and image-capturing devices utilizing the same
09/06/2001US20010019371 Method of transferring semiconductors
09/06/2001US20010019291 Semiconductor integrated circuit and semiconductor device
09/06/2001US20010019286 Booster circuit
09/06/2001US20010019278 Semiconductor integrated circuit
09/06/2001US20010019275 Method for testing integrated circuit devices
09/06/2001US20010019261 Bandgap voltage reference source
09/06/2001US20010019250 Exposure apparatus and method utilizing isolated reaction frame
09/06/2001US20010019237 Plasma processing apparatus
09/06/2001US20010019180 Semiconductor integrated circuit device and process for manufacturing the same
09/06/2001US20010019179 Connecting method of semiconductor element and semiconductor device
09/06/2001US20010019178 Method of interconnecting electronic components using a plurality of conductive studs
09/06/2001US20010019177 Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
09/06/2001US20010019175 In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application
09/06/2001US20010019174 Method and apparatus for assembling a conformal chip carrier to a flip chip
09/06/2001US20010019173 Semiconductor device and method of manufacturing the same
09/06/2001US20010019168 Semiconductor component with passivation
09/06/2001US20010019166 Semiconductor devices
09/06/2001US20010019164 Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby
09/06/2001US20010019163 Integrated circuit including high-voltage and logic transistors and EPROM cells
09/06/2001US20010019162 Stacked semiconductor integrated circuit device and manufacturing method thereof
09/06/2001US20010019161 Semiconductor device comprising mis field-effect transistor, and method of fabricating the same
09/06/2001US20010019159 Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same
09/06/2001US20010019158 Semiconductor device having gate insulating film of silicon oxide and silicon nitride films
09/06/2001US20010019157 Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method
09/06/2001US20010019156 Semiconductor device and fabrication method thereof
09/06/2001US20010019155 Semiconductor device and method of manufacturing semiconductor device
09/06/2001US20010019154 Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
09/06/2001US20010019153 Method For Producing A Semiconductor Film
09/06/2001US20010019152 Semiconductor device and method of fabricating the same
09/06/2001US20010019151 Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
09/06/2001US20010019150 Non-volatile semiconductor memory device and manufacturing method thereof
09/06/2001US20010019149 Flash memory device and a fabrication process thereof
09/06/2001US20010019148 Semiconductor devices and processes for making them
09/06/2001US20010019147 SEMICONDUCTOR DEVICE WITH MEMORY CAPACITOR HAVING AN ELECTRODE OF Si1-x Gex.
09/06/2001US20010019146 Semiconductor memory device and manufacturing method of the same
09/06/2001US20010019145 Semiconductor memory device and method of manufacturing the same
09/06/2001US20010019144 Thin-film capacitors and mehtods for forming the same
09/06/2001US20010019143 Multilevel conductive interconnections including capacitor electrodes for integrated circuit devices
09/06/2001US20010019142 Semiconductor device and method of fabricating the same
09/06/2001US20010019141 Semiconductor device with capacitive element and method of forming the same
09/06/2001US20010019140 Semiconductor memory device and method for the manufacture thereof
09/06/2001US20010019137 Semiconductor device and method of manufacturing the same
09/06/2001US20010019136 Semiconductor light emitting element and its manufacturing method
09/06/2001US20010019132 Semi-insulating silicon carbide without vanadium domination
09/06/2001US20010019131 Field effect transistor and manufacturing method thereof
09/06/2001US20010019130 Semiconductor device
09/06/2001US20010019129 Contact structure of wiring and a method for manufacturing the same
09/06/2001US20010019128 Semiconductor device, display device, and method for producing a semiconductor device
09/06/2001US20010019127 Etching method, thin film transistor matrix substrate, and its manufacture
09/06/2001US20010019126 Methods of forming thin-film transistor display devices
09/06/2001US20010019125 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
09/06/2001US20010019123 Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same
09/06/2001US20010019109 Scanning electron microscope
09/06/2001US20010019040 Discharge tube for a local etching apparatus and a local etching apparatus using the discharge tube
09/06/2001US20010019036 Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head
09/06/2001US20010019016 For use in semiconductor fabrication; recessing the coil reduces deposition of material onto the coil, reducing particulate matter shed by the coil onto the workpiece
09/06/2001US20010018988 Apparatus and method for reducing propagation delay in a conductor
09/06/2001US20010018987 Interconnect structure
09/06/2001US20010018983 Multilayer integrated substrate and manufacturing method for multilayer ceramic element
09/06/2001US20010018982 Circuit board having bonding areas to be joined with bumps by ultrasonic bonding
09/06/2001US20010018951 Plasma processing apparatus and plasma processing method
09/06/2001US20010018949 Method of producing semiconductor thin film and method of producing solar cell using same
09/06/2001US20010018922 Alkaline solutions are used with a nitrogen environment to clean a semiconductor device's copper surface of residues following chemical mechanical polishing and plasma etching steps; reduces alkaline etch rate of copper surface
09/06/2001US20010018895 Reactor for manufacturing a semiconductor device
09/06/2001US20010018892 Apparatus for fabricating single crystal
09/06/2001US20010018890 Method of highly purifying Si surface and a atomically flattening method for an Si surface
09/06/2001US20010018889 Apparatus for growing a semiconductor crystal and method of growing the same
09/06/2001US20010018800 Method for forming interconnects
09/06/2001US20010018799 Method of forming a chip carrier by joining a laminate layer and stiffener
09/06/2001US20010018797 Low temperature co-fired ceramic with improved registration
09/06/2001US20010018790 Preventive maintenance apparatus for CMP top-ring's backing-film and the method thereof
09/06/2001US20010018787 Method for fabricating a capacitor in a semiconductor memory device
09/06/2001DE10106565A1 Point diffraction interferometer is used in the manufacture of very high tolerance reflex mirrors and as an aid in projection alignment, with a pinhole mirror for beam bundling and splitting off a reference beam
09/06/2001DE10105986A1 Semiconductor arrangement used in a solar cell comprises a polycrystalline silicon layer formed by heat treating an amorphous silicon layer in the presence of a metallic catalyst
09/06/2001DE10051579A1 Semiconductor device comprises sliced insulating oxide film to protect against dielectric strain
09/06/2001DE10010583A1 Process for structuring and cleaning partially silicided silicon wafers comprises structuring the wafers in a solution containing ammonia and hydrogen peroxide, and cleaning the wafers
09/06/2001DE10010131A1 Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence
09/06/2001DE10009346A1 Schreib-/Leseverstärker mit Vertikaltransistoren für DRAM-Speicher Read / Write Amplifier with vertical transistors for DRAM memory
09/06/2001DE10009146A1 Production of polycrystalline metal-oxide-containing layer involves applying filling solution to polycrystalline metal-oxide-containing layer to form filling layer
09/06/2001DE10008829A1 Verfahren zum Entfernen von adsorbierten Molekülen aus einer Kammer A method for removing adsorbed molecules from a chamber
09/06/2001DE10008617A1 Verfahren zur Herstellung einer ferroelektrischen Schicht A method of manufacturing a ferroelectric layer