Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2001
09/07/2001WO2001065608A2 Trench gate dmos field-effect transistor and method of making the same
09/07/2001WO2001065606A2 Field effect transistor configuration having a high latch-up strength and method for the production thereof
09/07/2001WO2001065603A1 Heat-conducting adhesive compound and a method for producing a heat-conducting adhesive compound
09/07/2001WO2001065602A1 Wiring board, semiconductor device, and method of manufacturing wiring board
09/07/2001WO2001065601A2 Device for packing electronic components using injection moulding technology
09/07/2001WO2001065600A2 Nanoscale patterning for the formation of extensive wires
09/07/2001WO2001065599A2 Nitride layer forming methods
09/07/2001WO2001065598A1 Electrical connection between two surfaces of a substrate and method for producing same
09/07/2001WO2001065597A1 Semiconductor device and method of fabrication
09/07/2001WO2001065596A2 Method for controlling uniformity of treatment of a surface of material for microelectronics with an electrically charged particle beam and equipment therefor
09/07/2001WO2001065595A2 A method of forming an opening or cavity in a substrate for receiving an electronic component
09/07/2001WO2001065594A2 A method of producing a schottky varicap diode
09/07/2001WO2001065593A1 Dense-plasma etching of inp-based materials using chlorine and nitrogen
09/07/2001WO2001065592A2 Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates
09/07/2001WO2001065565A1 An improved high density memory cell
09/07/2001WO2001065317A2 Method for evaluation of reticle image using aerial image simulator
09/07/2001WO2001065316A1 Method of manufacturing a device by means of a mask and phase-shifting mask for use in said method
09/07/2001WO2001065315A2 Method and apparatus for mixed-mode optical proximity correction
09/07/2001WO2001065224A1 Method and apparatus for measuring the temperature of a semiconductor substrate by means of a resonant circuit
09/07/2001WO2001064975A2 Method and device for growing large-volume oriented monocrystals
09/07/2001WO2001064391A2 Planarization system with a wafer transfer corridor and multiple polishing modules
09/07/2001WO2001064389A2 Vertical counter balanced test head manipulator
09/07/2001WO2001064314A1 Air management system and method for chemical containment and contamination reduction in a semiconductor manufacturing facility
09/07/2001WO2001029890A3 Method relating to anodic bonding
09/07/2001WO2001006568A3 Trench-gate field-effect transistors and their manufacture
09/07/2001WO2001001247A3 Semiconductor parallel tester
09/07/2001WO2000077832A3 Metal oxide thin films for high dielectric constant applications
09/07/2001WO2000073905A3 Test interface for electronic circuits
09/07/2001WO2000072359A3 Source-down power transistor
09/07/2001WO2000025365A3 Power semiconductor devices having improved high frequency switching and breakdown characteristics
09/07/2001EP1145325A3 Trench-gate field-effect transistors and their manufacture
09/07/2001CA2401025A1 An improved high density memory cell
09/07/2001CA2400765A1 Dense-plasma etching of inp-based materials using chlorine and nitrogen
09/07/2001CA2353490A1 Method and apparatus for low energy electron enhanced etching of substrates in an ac or dc plasma environment
09/06/2001US20010020195 Process monitoring system for lithography lasers
09/06/2001US20010020081 Heat and solvent resistance
09/06/2001US20010020065 Vinyl 4-t-butoxycarbonyloxybenzal-vinyl alcohol-vinyl acetate copolymer, vinyl 4-t-butoxycarbonyloxybenzal-vinyl 4-hydroxybenzal-vinyl alcohol-vinyl acetate and preparation methods thereof
09/06/2001US20010019934 Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using
09/06/2001US20010019910 Integrated circuit with electrical connection points that can be severed by the action of enegry
09/06/2001US20010019905 Lead configurations
09/06/2001US20010019903 Inductively coupled plasma CVD
09/06/2001US20010019902 Wet-oxidation apparatus and wet-oxidation method
09/06/2001US20010019901 Process of manufacturing semiconductor device
09/06/2001US20010019900 Semiconductor manufacturing method and semiconductor manufacturing apparatus
09/06/2001US20010019899 Semiconductor processing apparatuses, and methods of forming antireflective coating materials over substrates
09/06/2001US20010019898 Integrated circuit with borderless contacts
09/06/2001US20010019897 High etch rate method for plasma etching silicon nitride
09/06/2001US20010019896 Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method and method of optimizing recipe of cleaning process for process chamber
09/06/2001US20010019895 Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes
09/06/2001US20010019894 Pre-heat step (or chamber) implemented in pr dry ash machines to effectively eliminate pr extrusion (bubble) after alloy
09/06/2001US20010019893 Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture
09/06/2001US20010019892 Process for fabricating a semiconductor device
09/06/2001US20010019891 Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
09/06/2001US20010019890 Process for manufacturing semiconductor device
09/06/2001US20010019889 Method for PECVD deposition of selected material films
09/06/2001US20010019888 Metal deposit process
09/06/2001US20010019887 Chemical mechanical polishing of polysilicon plug using a silicon nitride stop layer
09/06/2001US20010019886 Borderless contact to diffusion with respect to gate conductor and methods for fabricating
09/06/2001US20010019885 Methods for patterning metal layers for use with forming semiconductor devices
09/06/2001US20010019884 Microstructure liner having improved adhesion
09/06/2001US20010019883 Method for forming an inter-metal dielectric layer
09/06/2001US20010019882 Method of making electrical interconnection for attachment to a substrate
09/06/2001US20010019881 Plasma processing apparatus and method
09/06/2001US20010019880 Method of producing alignment marks
09/06/2001US20010019878 Method for producing a semiconductor device
09/06/2001US20010019877 Method of forming silicon-contained crystal thin film
09/06/2001US20010019876 Methods of forming materials between conductive electrical components, and insulating materials
09/06/2001US20010019875 Electrode structure of capacitor for semiconductor memory device and fabrication method thereof
09/06/2001US20010019874 Capacitor for integrated circuit and its fabrication method
09/06/2001US20010019873 Self aligned symmetric intrinsic process and device
09/06/2001US20010019872 Transistor and method
09/06/2001US20010019871 Semiconductor device having SOI structure and method of fabricating the same
09/06/2001US20010019870 Semiconductor processing methods of forming integrated circuitry, forming conductive lines, forming a conductive grid, forming a conductive network, forming an electrical interconnection to a node location forming an electrical interconnection with a transistor source/drain region, and integrated circuitry
09/06/2001US20010019869 Asymmetrical MOS channel structure with drain extension
09/06/2001US20010019868 Field effect transistor assemblies, integrated circuitry, and methods of forming field effect transistors and integrated circuitry
09/06/2001US20010019867 Non-volatile semiconductor memory and fabricating method therefor
09/06/2001US20010019866 Method of forming a contact hole in a semiconductor substrate using oxide spacers on the sidewalls of the contact hole
09/06/2001US20010019865 Metallization outside protective overcoat for improved capacitors and inductors
09/06/2001US20010019864 Semiconductor device and method for fabricating the same
09/06/2001US20010019863 Method of forming a polycrystalline silicon layer
09/06/2001US20010019862 Semiconductor device and its fabrication
09/06/2001US20010019860 Semiconductor device and method for manufacturing the same
09/06/2001US20010019859 Semiconductor device and fabrication method thereof
09/06/2001US20010019858 Semiconductor device and method of manufacturing the same
09/06/2001US20010019857 Semiconductor device and process for producing the same
09/06/2001US20010019856 Semiconductor device and method for manufacturing the same
09/06/2001US20010019855 Method for manufacturing integrated circuits and semiconductor wafer which has integrated circuits
09/06/2001US20010019854 Low-pin-count chip package and manufacturing method thereof
09/06/2001US20010019852 Semiconductor device, method of making the same, circuit board, flexible substrate, and method of making substrate
09/06/2001US20010019851 Reduced leakage trench isolation
09/06/2001US20010019850 Reduced leakage trench isolation
09/06/2001US20010019847 Method of forming thin copper film
09/06/2001US20010019812 Charged-particle-beam microlithography apparatus and methods for exposing a segmented reticle
09/06/2001US20010019807 Semiconductor substrate
09/06/2001US20010019803 Buffer layer
09/06/2001US20010019802 Forming light shield on substrate
09/06/2001US20010019766 A substrate with an intermediate layer superimposed on it and a pressure sensitive adhesive layer superimposed on the intermediate layer
09/06/2001US20010019765 Radiation-curable heat-peelable pressure-sensitive adhesive sheet and process for producing cut pieces with the same
09/06/2001US20010019750 Vapor deposition; molecular beam epitaxial
09/06/2001US20010019744 Process for plating metal coatings