Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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08/28/2001 | US6282080 Semiconductor circuit components and capacitors |
08/28/2001 | US6281974 Method and apparatus for measurements of patterned structures |
08/28/2001 | US6281966 Exposure apparatus and device manufacturing method |
08/28/2001 | US6281965 Exposure method and exposure system using the exposure method |
08/28/2001 | US6281964 Projection exposure apparatus and device manufacturing method |
08/28/2001 | US6281962 Processing apparatus for coating substrate with resist and developing exposed resist including inspection equipment for inspecting substrate and processing method thereof |
08/28/2001 | US6281778 Monolithic inductor with magnetic flux lines guided away from substrate |
08/28/2001 | US6281756 Transistor with internal matching circuit |
08/28/2001 | US6281737 Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor |
08/28/2001 | US6281733 Clock control method and integrated circuit element manufactured by using same |
08/28/2001 | US6281713 Current sense amplifiers having equalization circuits therin that inhibit signal oscillations during active modes |
08/28/2001 | US6281693 Semiconductor device test board and a method of testing a semiconductor device |
08/28/2001 | US6281655 High performance stage assembly |
08/28/2001 | US6281654 Method for making apparatus with dynamic support structure isolation and exposure method |
08/28/2001 | US6281643 Stage apparatus |
08/28/2001 | US6281593 SOI MOSFET body contact and method of fabrication |
08/28/2001 | US6281592 Package structure for semiconductor chip |
08/28/2001 | US6281591 Semiconductor apparatus and semiconductor apparatus manufacturing method |
08/28/2001 | US6281589 System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides |
08/28/2001 | US6281588 Lead configurations |
08/28/2001 | US6281587 Multi-layered coaxial interconnect structure |
08/28/2001 | US6281586 Integrated semiconductor circuit configuration having stabilized conductor tracks |
08/28/2001 | US6281585 Air gap dielectric in self-aligned via structures |
08/28/2001 | US6281584 Integrated circuit with improved adhesion between interfaces of conductive and dielectric surfaces |
08/28/2001 | US6281581 Substrate structure for improving attachment reliability of semiconductor chips and modules |
08/28/2001 | US6281580 LSI package and inner lead wiring method for same |
08/28/2001 | US6281579 Insert-molded leadframe to optimize interface between powertrain and driver board |
08/28/2001 | US6281571 Semiconductor device having an external connection electrode extending through a through hole formed in a substrate |
08/28/2001 | US6281570 Tape carrier for BGA and semiconductor device using the same |
08/28/2001 | US6281569 Pressure-contact semiconductor device |
08/28/2001 | US6281567 Substrate for mounting semiconductor chip with parallel conductive lines |
08/28/2001 | US6281566 Plastic package for electronic devices |
08/28/2001 | US6281565 Semiconductor device and method for producing the same |
08/28/2001 | US6281564 Programmable integrated passive devices |
08/28/2001 | US6281563 Laser programming of CMOS semiconductor devices using make-link structure |
08/28/2001 | US6281562 Semiconductor device which reduces the minimum distance requirements between active areas |
08/28/2001 | US6281559 Gate stack structure for variable threshold voltage |
08/28/2001 | US6281558 Semiconductor device and manufacturing method thereof |
08/28/2001 | US6281557 Read-only memory cell array and method for fabricating it |
08/28/2001 | US6281556 Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate and the resulting device |
08/28/2001 | US6281555 Improved packing density due to an ultra shallow trench isolation structure |
08/28/2001 | US6281552 Thin film transistors having ldd regions |
08/28/2001 | US6281551 Back-plane for semiconductor device |
08/28/2001 | US6281548 Power semiconductor device using semi-insulating polycrystalline silicon |
08/28/2001 | US6281547 Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask |
08/28/2001 | US6281545 Multi-level, split-gate, flash memory cell |
08/28/2001 | US6281544 Flash memory structure and method of manufacture |
08/28/2001 | US6281543 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same |
08/28/2001 | US6281542 Flower-like capacitor structure for a memory cell |
08/28/2001 | US6281541 Metal-oxide-metal capacitor for analog devices |
08/28/2001 | US6281540 Semiconductor memory device having bitlines of common height |
08/28/2001 | US6281539 Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance |
08/28/2001 | US6281538 Multi-layer tunneling device with a graded stoichiometry insulating layer |
08/28/2001 | US6281537 Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same |
08/28/2001 | US6281536 Ferroelectric memory device with improved ferroelectric capacity characteristic |
08/28/2001 | US6281535 Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell |
08/28/2001 | US6281534 Low imprint ferroelectric material for long retention memory and method of making the same |
08/28/2001 | US6281532 Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
08/28/2001 | US6281531 Solid picture element |
08/28/2001 | US6281530 LPNP utilizing base ballast resistor |
08/28/2001 | US6281529 Semiconductor device having optimized input/output cells |
08/28/2001 | US6281528 Ohmic contact improvement between layer of a semiconductor device |
08/28/2001 | US6281522 First semiconductive layer of silicon carbide, a buffer layer of aluminum nitride, and a second semiconductor layer of aluminum, gallium, and indium nitride; for laser diodes; electrical and optical properties |
08/28/2001 | US6281521 Silicon carbide horizontal channel buffered gate semiconductor devices |
08/28/2001 | US6281520 Gate insulated field effect transistors and method of manufacturing the same |
08/28/2001 | US6281518 Layered III-V semiconductor structures and light emitting devices including the structures |
08/28/2001 | US6281516 FIMS transport box load interface |
08/28/2001 | US6281513 Pattern forming method |
08/28/2001 | US6281512 Ion implantation system having direct and alternating current sources |
08/28/2001 | US6281511 Apparatus for forming materials |
08/28/2001 | US6281510 Sample transferring method and sample transfer supporting apparatus |
08/28/2001 | US6281496 Observing/forming method with focused ion beam and apparatus therefor |
08/28/2001 | US6281479 Continual flow rapid thermal processing apparatus and method |
08/28/2001 | US6281471 Energy-efficient, laser-based method and system for processing target material |
08/28/2001 | US6281470 Thin film semiconductor device uniforming characteristics of semiconductor elements and manufacturing method thereof |
08/28/2001 | US6281469 Capacitively coupled RF-plasma reactor |
08/28/2001 | US6281452 Multi-level thin-film electronic packaging structure and related method |
08/28/2001 | US6281450 Substrate for mounting semiconductor chips |
08/28/2001 | US6281448 Printed circuit board and electronic components |
08/28/2001 | US6281447 Substrate structure |
08/28/2001 | US6281445 Device and method for connecting two electronic components |
08/28/2001 | US6281437 Method of forming an electrical connection between a conductive member having a dual thickness substrate and a conductor and electronic package including said connection |
08/28/2001 | US6281161 Platinum-containing materials and catalysts |
08/28/2001 | US6281147 Plasma CVD method |
08/28/2001 | US6281146 Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity |
08/28/2001 | US6281145 Apparatus and method for applying process solution |
08/28/2001 | US6281143 Method of forming borderless contact |
08/28/2001 | US6281142 Dielectric cure for reducing oxygen vacancies |
08/28/2001 | US6281141 Process for forming thin dielectric layers in semiconductor devices |
08/28/2001 | US6281140 Method of reducing the roughness of a gate insulator layer after exposure of the gate insulator layer to a threshold voltage implantation procedure |
08/28/2001 | US6281139 Wafer having smooth surface |
08/28/2001 | US6281138 System and method for forming a uniform thin gate oxide layer |
08/28/2001 | US6281137 Chemical treatment apparatus and chemical treatment method |
08/28/2001 | US6281136 Apparatus for etching glass substrate |
08/28/2001 | US6281135 Oxygen free plasma stripping process |
08/28/2001 | US6281134 Method for combining logic circuit and capacitor |
08/28/2001 | US6281133 Method for forming an inter-layer dielectric layer |
08/28/2001 | US6281132 Device and method for etching nitride spacers formed upon an integrated circuit gate conductor |
08/28/2001 | US6281131 Methods of forming electrical contacts |
08/28/2001 | US6281127 Self-passivation procedure for a copper damascene structure |