Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2001
08/21/2001US6277723 Plasma damage protection cell using floating N/P/N and P/N/P structure
08/21/2001US6277722 Method for forming poly metal gate
08/21/2001US6277721 Salicide formation process
08/21/2001US6277720 Silicon nitride dopant diffusion barrier in integrated circuits
08/21/2001US6277719 Method for fabricating a low resistance Poly-Si/metal gate
08/21/2001US6277718 Semiconductor device and method for fabricating the same
08/21/2001US6277717 Fabrication method for a buried bit line
08/21/2001US6277716 Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system
08/21/2001US6277715 Production method for silicon epitaxial wafer
08/21/2001US6277714 Metal-contact induced crystallization in semiconductor devices
08/21/2001US6277713 Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor
08/21/2001US6277712 Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof
08/21/2001US6277711 Semiconductor matrix formation
08/21/2001US6277710 Method of forming shallow trench isolation
08/21/2001US6277709 Method of forming shallow trench isolation structure
08/21/2001US6277708 Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same
08/21/2001US6277707 Method of manufacturing semiconductor device having a recessed gate structure
08/21/2001US6277706 Method of manufacturing isolation trenches using silicon nitride liner
08/21/2001US6277705 Method for fabricating an air-gap with a hard mask
08/21/2001US6277704 Microelectronic device fabricating method, method of forming a pair of conductive device components of different base widths from a common deposited conductive layer
08/21/2001US6277703 Method for manufacturing an SOI wafer
08/21/2001US6277702 Capacitor of a semiconductor device and a method of fabricating the same
08/21/2001US6277700 Anisotropically etching; process control
08/21/2001US6277699 Method for forming a metal-oxide-semiconductor transistor
08/21/2001US6277698 Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes
08/21/2001US6277697 Method to reduce inverse-narrow-width effect
08/21/2001US6277695 Method of forming vertical planar DMOSFET with self-aligned contact
08/21/2001US6277694 Fabrication method for a metal oxide semiconductor having a double diffused drain
08/21/2001US6277693 Self-aligned process for forming source line of ETOX flash memory
08/21/2001US6277692 Process for fabricating an EEPROM
08/21/2001US6277691 Method to fabricate a robust and reliable memory device
08/21/2001US6277690 Elimination of N+ implant from flash technologies by replacement with standard medium-doped-drain (Mdd) implant
08/21/2001US6277689 Nonvolatile memory
08/21/2001US6277688 Method of manufacturing a DRAM capacitor with increased electrode surface area
08/21/2001US6277687 Method of forming a pair of capacitors having a common capacitor electrode, method of forming DRAM circuitry, integrated circuitry and DRAM circuitry
08/21/2001US6277686 PIP capacitor for split-gate flash process
08/21/2001US6277685 Method of forming a node contact hole on a semiconductor wafer
08/21/2001US6277684 Method of fabricating a SOI structure semiconductor device
08/21/2001US6277683 Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer
08/21/2001US6277682 Source drain implant process for mixed voltage CMOS devices
08/21/2001US6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
08/21/2001US6277680 Methods of forming SOI insulator layers, methods of forming transistor devices, and semiconductor devices and assemblies
08/21/2001US6277679 Method of manufacturing thin film transistor
08/21/2001US6277678 Methods of manufacturing thin film transistors using insulators containing water
08/21/2001US6277677 Method of manufacturing a semiconductor device
08/21/2001US6277676 Method of fabricating capacitors and devices in mixed-signal integrated circuit
08/21/2001US6277675 Method of fabricating high voltage MOS device
08/21/2001US6277672 BGA package for high density cavity-up wire bond device connections using a metal panel, thin film and build up multilayer technology
08/21/2001US6277671 Methods of forming integrated circuit packages
08/21/2001US6277670 Semiconductor chip package and fabrication method thereof
08/21/2001US6277669 Wafer level packaging method and packages formed
08/21/2001US6277667 Method for fabricating solar cells
08/21/2001US6277666 Precisely defined microelectromechanical structures and associated fabrication methods
08/21/2001US6277662 Silicon substrate and forming method thereof
08/21/2001US6277661 Method for detecting sloped contact holes using a critical-dimension waveform
08/21/2001US6277660 Method and apparatus for testing chips
08/21/2001US6277659 Substrate removal using thermal analysis
08/21/2001US6277657 Apparatus for fabricating semiconductor device and fabrication method therefor
08/21/2001US6277656 Substrate removal as a function of acoustic analysis
08/21/2001US6277546 Coating substrate with polymer; heating; imagewise exposure;development
08/21/2001US6277543 Method for forming features using frequency doubling hybrid resist and device formed thereby
08/21/2001US6277538 Photosensitive polymer having cyclic backbone and resist composition comprising the same
08/21/2001US6277532 Charged-particle-beam microlithographic methods for correction of reticle distortions
08/21/2001US6277531 Charged-particle-beam microlithography apparatus and methods including focal-point correction
08/21/2001US6277530 Method for making partial full-wafer pattern for charged particle beam lithography
08/21/2001US6277527 Photolithographic mask; first and second image segments
08/21/2001US6277501 Silicon epitaxial wafer and method for manufacturing the same
08/21/2001US6277442 Suplying liquid; evacuating excess
08/21/2001US6277441 Method of forming coating film on a substrate
08/21/2001US6277436 Dielectric metal titanate film has a dielectric constant k>40 and a second order voltage coefficient a.sub.2 <100 ppm/v2, and said metal titanate film contains at least 60 atom % titanium
08/21/2001US6277263 Alkaline electrolytic copper bath is used to electroplate copper onto a barrier layer or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer
08/21/2001US6277260 Apparatus and method for plating wafers, substrates and other articles
08/21/2001US6277253 External coating of tungsten or tantalum or other refractory metal on IMP coils
08/21/2001US6277251 Adjusting the density of plasma contained in a chamber where semiconductor wafers are processed, and etching or depositing a metal layer on a substrate
08/21/2001US6277249 Integrated process for copper via filling using a magnetron and target producing highly energetic ions
08/21/2001US6277237 Chamber liner for semiconductor process chambers
08/21/2001US6277236 Light sensitive chemical-mechanical polishing apparatus and method
08/21/2001US6277234 Method and apparatus for removing work pieces adhered to a support
08/21/2001US6277222 Electronic component connecting method
08/21/2001US6277206 Moving solder-clogged collet into contact with preform of solder, melting solder clog and preform into a single melted mass, cooling melted mass to solidify it, moving collet away from cooled mass, leaving clog
08/21/2001US6277205 Cleaning surface of photomask to be used as master in photolithography step in production of semiconductor device with hot mixture of sulfuric acid and hydrogen peroxide to decompose organic objects, removing sulfuric acid, drying
08/21/2001US6277204 Methods for cleaning wafers used in integrated circuit devices
08/21/2001US6277203 Applying surfactant solution to surface, scrubbing surface, spin-rinsing surface of substrate using de-ionized water to complete removal of contaminants from surface; surfactant solution can be mixed with chemical enhancer
08/21/2001US6277201 CVD apparatus for forming thin films using liquid reaction material
08/21/2001US6277200 For using bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon
08/21/2001US6277199 Chamber design for modular manufacturing and flexible onsite servicing
08/21/2001US6277198 Use of tapered shadow clamp ring to provide improved physical vapor deposition system
08/21/2001US6277194 Method for in-situ cleaning of surfaces in a substrate processing chamber
08/21/2001US6277193 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
08/21/2001US6277173 System and method for discharging gas
08/21/2001US6277169 Method for making silver-containing particles
08/21/2001US6277014 Carrier head with a flexible membrane for chemical mechanical polishing
08/21/2001US6277010 Carrier head with a flexible membrane for a chemical mechanical polishing system
08/21/2001US6277009 Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
08/21/2001US6277008 Polishing apparatus
08/21/2001US6277001 Method of cutting a laminated workpiece
08/21/2001US6276999 Apparatus, backing plate, backing film and method for chemical mechanical polishing
08/21/2001US6276998 Padless substrate carrier
08/21/2001US6276997 Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers
08/21/2001US6276996 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad