H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2001
12/19/2001	EP1163697A1 Method of making a high-voltage transistor with multiple lateral conduction layers
12/19/2001	EP1163696A1 A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR
12/19/2001	EP1163695A1 Method of manufacturing a transistor
12/19/2001	EP1163676A1 Storage cell array and method for the production thereof
12/19/2001	EP1163552A1 Method of forming a masking pattern on a surface
12/19/2001	EP1163550A1 Hydroxy-amino thermally cured undercoat for 193 nm lithography
12/19/2001	EP1163507A2 Method and apparatus for the analysis of material composition
12/19/2001	EP1163499A1 Method for determining the temperature in a thermal processing chamber
12/19/2001	EP1163488A1 Method and apparatus for wafer metrology
12/19/2001	EP1163379A1 Semiconductor wafer comprising a thin epitaxial silicon layer and method for producing same
12/19/2001	EP1163354A1 Compositions and methods for helper-free production of recombinant adeno-associated viruses
12/19/2001	EP1163311A1 Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
12/19/2001	EP1163080A1 Filling device and method for filling balls in the apertures of a ball-receiving element
12/19/2001	EP1021491B1 Polishing agent and use thereof to planish a semiconductor substrate
12/19/2001	EP0960435A4 Apparatus and methods for minimizing as-deposited stress in tungsten silicide films
12/19/2001	EP0931341B1 Process for producing barrier-free semiconductor storage assemblies
12/19/2001	EP0808508B1 Methods of mechanical and electrical substrate connection
12/19/2001	EP0782770B1 Self-aligned field-effect transistor for high frequency applications
12/19/2001	EP0782768B1 Integrated circuit structure with an active microwave element and at least one passive element
12/19/2001	EP0766909B1 Vertical interconnect process for silicon segments
12/19/2001	EP0737363B1 Method of manufacturing a semiconductor device for microwave
12/19/2001	EP0727045B1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
12/19/2001	EP0653103B1 Dose modulation and pixel deflection for raster scan lithography
12/19/2001	EP0551382B1 Semiconductor chip assemblies, methods of making same and components for same
12/19/2001	CN2466661Y Probe type testing device
12/19/2001	CN1327616A Integrated circuit power and ground route
12/19/2001	CN1327615A 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
12/19/2001	CN1327612A Semiconductor processing equipment having tiled ceramic liner
12/19/2001	CN1327596A Integral lens for high energy particle flow, method for producing such lenses and use thereof
12/19/2001	CN1327552A Rapid on chip voltage generator for low power integrated circuit
12/19/2001	CN1327490A Reaction chamber for an epitaxial reactor
12/19/2001	CN1327486A Apparatus for forming thin film
12/19/2001	CN1327271A Vertical MOS triode and its producing method
12/19/2001	CN1327269A Solid photographic device and its producing method
12/19/2001	CN1327267A Forming anti-fuse structure in silicone on insulator and method thereof
12/19/2001	CN1327266A Semiconductor device and its producing method
12/19/2001	CN1327265A Lead wire frame, semiconductor and its producing method, circuit base board and electronic device
12/19/2001	CN1327264A Method for producing memory module with floating grid
12/19/2001	CN1327263A Semiconductor device and its producing method, laminated semiconductor device and circuit base board
12/19/2001	CN1327262A Method for producing semiconductor device
12/19/2001	CN1327261A Method for producing fuly self alignment film field effect transistor by improved technology window
12/19/2001	CN1327260A Technological process of semiconductor metal etching
12/19/2001	CN1327259A Low resistant tungsten silicide rigidly adhesive to low layer and semiconductor device using it
12/19/2001	CN1327238A Equipmental readant method of resistance cross point storage unit array
12/19/2001	CN1327168A Liquid crystal display device and its producing method
12/19/2001	CN1327167A Liquid crystal display device and its fault correcting method
12/19/2001	CN1327020A Connection material and connection structure body
12/19/2001	CN1326824A distortion correcting method and device for plane body
12/19/2001	CN1076520C Semiconductor device and its making method
12/19/2001	CN1076519C Manufacturing method of semiconductor devices
12/19/2001	CN1076518C Plasma treating device
12/19/2001	CN1076517C Production of semiconductor unit
12/19/2001	CN1076516C Integrated partial sawing process
12/19/2001	CN1076396C Cleaning agent and method
12/19/2001	CN1076249C Method and apparatus for shaping polishing pads
12/18/2001	USRE37470 Substrate processing apparatus and substrate processing method
12/18/2001	US6331977 System on chip (SOC) four-way switch crossbar system and method
12/18/2001	US6331947 Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell a non-volatile one
12/18/2001	US6331943 MTJ MRAM series-parallel architecture
12/18/2001	US6331931 Radio frequency power device improvement
12/18/2001	US6331891 Apparatus and method for assembling semiconductor device and semiconductor device thus fabricated
12/18/2001	US6331885 Stage apparatus, scanning type exposure apparatus, and device produced with the same
12/18/2001	US6331806 Microwave circuit package and edge conductor structure
12/18/2001	US6331800 Post-silicon methods for adjusting the rise/fall times of clock edges
12/18/2001	US6331797 Voltage translator circuit
12/18/2001	US6331796 Semiconductor integrated circuit device having transistor logic and load circuits
12/18/2001	US6331739 Fuse in top level metal and in a step, process of making and process of trimming
12/18/2001	US6331737 Method of encapsulating thin semiconductor chip-scale packages
12/18/2001	US6331734 Semiconductor device and method for manufacturing the same
12/18/2001	US6331732 Via structure in an integrated circuit utilizing a high conductivity metal interconnect and a method for manufacturing same
12/18/2001	US6331727 Semiconductor device and method of fabricating the same
12/18/2001	US6331725 Integrated circuitry
12/18/2001	US6331724 Single transistor E2prom memory device with controlled erasing
12/18/2001	US6331723 Active matrix display device having at least two transistors having LDD region in one pixel
12/18/2001	US6331722 Hybrid circuit and electronic device using same
12/18/2001	US6331721 Memory cell with built in erasure feature
12/18/2001	US6331720 Electrically conductive structure
12/18/2001	US6331719 Semiconductor device for reducing effects of noise on an internal circuit
12/18/2001	US6331718 Thin film circuit with improved carrier mobility
12/18/2001	US6331717 Insulated gate semiconductor device and process for fabricating the same
12/18/2001	US6331713 Movable ion source assembly
12/18/2001	US6331712 Section formation observing method
12/18/2001	US6331709 Alignment mark detection method, and alignment method, exposure method and device, and device production method making use of the alignment mark detection method
12/18/2001	US6331697 System and method for rapid thermal processing
12/18/2001	US6331681 Electrical connection device for forming and semiconductor device having metal bump electrical connection
12/18/2001	US6331679 Multi-layer circuit board using anisotropic electro-conductive adhesive layer
12/18/2001	US6331495 Semiconductor structure useful in a self-aligned contact etch and method for making same
12/18/2001	US6331494 Deposition of low dielectric constant thin film without use of an oxidizer
12/18/2001	US6331493 Process for making low dielectric constant dielectric films
12/18/2001	US6331492 Nitridation for split gate multiple voltage devices
12/18/2001	US6331490 Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
12/18/2001	US6331489 Semiconductor device production method
12/18/2001	US6331488 Planarization process for semiconductor substrates
12/18/2001	US6331487 Removal of polishing residue from substrate using supercritical fluid process
12/18/2001	US6331486 Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
12/18/2001	US6331485 Electron cyclotron resonance plasma/chemical vapor deposition of titanium, zirconium or hafnium by reducing halide; conformally covering; noncracking; forming barrier layer; filling with electroconductive material
12/18/2001	US6331484 Titanium-tantalum barrier layer film and method for forming the same
12/18/2001	US6331483 Method of film-forming of tungsten
12/18/2001	US6331482 Method of VLSI contact, trench, and via filling using a germanium underlayer with metallization
12/18/2001	US6331481 Damascene etchback for low ε dielectric

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