Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/01/2002US6335290 Etching method, thin film transistor matrix substrate, and its manufacture
01/01/2002US6335289 Manufacturing method of semiconductor device
01/01/2002US6335288 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
01/01/2002US6335287 Method of forming trench isolation regions
01/01/2002US6335286 Feedback control of polish buff time as a function of scratch count
01/01/2002US6335285 Method for manufacturing a globally planarized semiconductor device
01/01/2002US6335284 Metallization process for manufacturing semiconductor devices
01/01/2002US6335283 Forming a silicon oxide inter-layer dielectric layer; forming openings, filling with copper or copper alloy to form pattern; planarizing; treating with nitrogen plasma to form silicon oxynitride; depositing capping layer
01/01/2002US6335282 Chemical vapor depositing a layer comprising titanium, titanium silicide or a mixture over substrate using precursor gas comprising titanium and chlorine; exposed to hydrogen containing plasma to remove chlorine; exposure to nitrogen
01/01/2002US6335281 Deposited film forming process
01/01/2002US6335280 Tungsten silicide deposition process
01/01/2002US6335279 Method of forming contact holes of semiconductor device
01/01/2002US6335278 Method of hydrogen anneal to a semiconductor substrate
01/01/2002US6335277 Method for forming metal nitride film
01/01/2002US6335276 Method for manufacturing a thin film transistor array panel for a liquid crystal display and a photolithography method for fabricating thin films
01/01/2002US6335275 Method for forming contact holes and semiconductor device fabricated using the same
01/01/2002US6335274 Providing substrate; depositing a conductive layer; forming a dielectric liner layer on conductive layer, wherein dielectric liner layer has a high reflectivity index (ri); depositing a fluorinated silicate glass layer; planarizing
01/01/2002US6335273 Surface treatment of low-K SiOF to prevent metal interaction
01/01/2002US6335272 Buried butted contact and method for fabricating
01/01/2002US6335271 Method of forming semiconductor device bump electrodes
01/01/2002US6335270 Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random access memory (DRAM) circuitry
01/01/2002US6335269 Semiconductor substrate and method for producing the same
01/01/2002US6335267 Semiconductor substrate and method of fabricating semiconductor device
01/01/2002US6335266 Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bonds
01/01/2002US6335265 Forming a catalyst layer on a bottom of first separation groove in front surface of semiconductor substrate, forming a first metal layer selectively in first separation groove by electroless plating
01/01/2002US6335264 Controlled cleavage thin film separation process using a reusable substrate
01/01/2002US6335262 Method for fabricating different gate oxide thicknesses within the same chip
01/01/2002US6335261 Directional CVD process with optimized etchback
01/01/2002US6335260 Method for improving the dimple phenomena of a polysilicon film deposited on a trench
01/01/2002US6335259 Method of forming shallow trench isolation
01/01/2002US6335258 Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element
01/01/2002US6335257 Method of making pillar-type structure on semiconductor substrate
01/01/2002US6335256 Method of manufacturing a bipolar transistor
01/01/2002US6335255 Manufacturing a heterobipolar transistor and a laser diode on the same substrate
01/01/2002US6335254 Methods of forming transistors
01/01/2002US6335253 Method to form MOS transistors with shallow junctions using laser annealing
01/01/2002US6335252 Semiconductor device manufacturing method
01/01/2002US6335251 Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor
01/01/2002US6335250 Semiconductor device and method for the manufacture thereof
01/01/2002US6335249 Salicide field effect transistors with improved borderless contact structures and a method of fabrication
01/01/2002US6335248 Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology
01/01/2002US6335247 Integrated circuit vertical trench device and method of forming thereof
01/01/2002US6335246 Methods of forming field effect transistors and related field effect transistor constructions
01/01/2002US6335245 Method for fabricating single electron transistor
01/01/2002US6335244 Method for producing nonvolatile semiconductor memory device
01/01/2002US6335243 Method of fabricating nonvolatile memory device
01/01/2002US6335242 Method for fabricating semiconductor device having a HSG layer
01/01/2002US6335241 Semiconductor device and manufacturing method thereof
01/01/2002US6335240 Capacitor for a semiconductor device and method for forming the same
01/01/2002US6335239 Manufacturing a DRAM cell having an annular signal transfer region
01/01/2002US6335238 Integrated dielectric and method
01/01/2002US6335237 Methods of forming capacitor and bitline structures
01/01/2002US6335236 Manufacturing method of semiconductor device
01/01/2002US6335235 Simplified method of patterning field dielectric regions in a semiconductor device
01/01/2002US6335234 Methods of forming field effect transistors and related field effect transistor constructions
01/01/2002US6335233 Method for fabricating MOS transistor
01/01/2002US6335232 Method of manufacturing a thin film transistor
01/01/2002US6335231 Method of fabricating a high reliable SOI substrate
01/01/2002US6335230 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
01/01/2002US6335228 Method for making an anti-fuse
01/01/2002US6335224 Protection of microelectronic devices during packaging
01/01/2002US6335223 Method for producing a resin-sealed semiconductor device
01/01/2002US6335222 Microelectronic packages with solder interconnections
01/01/2002US6335221 Ball grid array (BGA) encapsulation mold
01/01/2002US6335220 Solid state imaging device with four-phase charge-coupled device and method of manufacturing the same
01/01/2002US6335218 Method for fabricating a group III nitride semiconductor device
01/01/2002US6335216 Method for fabricating a semiconductor optical device having a ridge stripe
01/01/2002US6335214 SOI circuit with dual-gate transistors
01/01/2002US6335213 Electro-optical device and thin film transistor and method for forming the same
01/01/2002US6335211 Thin film transistor array panel for a liquid crystal display having a wide viewing angle and a method for manufacturing the same
01/01/2002US6335208 Laser decapsulation method
01/01/2002US6335207 Method for fabricating ferroelectric thin film
01/01/2002US6335206 Integrated capacitor device and method of fabricating the same
01/01/2002US6335148 Method for manufacturing TFT LCD device
01/01/2002US6335146 Exposure apparatus and method
01/01/2002US6335145 Forming a photosensitive film on a substrate and radiating the photosensitive film on the substrate with a beam of a predetermined shape forming an exposed region of a desired shape butt-joining the exposed unit regions
01/01/2002US6335130 Fabricating a phase shifting mask comprising at least one unattentuated, halftoned, phase-shift feature; off-axis illuminating mask such that light passes through mask onto material
01/01/2002US6335129 Method for repairing pattern defect, photo mask using the method, and semiconductor device manufacturing method employing the photo mask
01/01/2002US6335128 Generating a first mask/reticle to define a phase-shifting region to define boundaries of a structure in a first layer of the integrated circuit, generating second mask/reticle to define second region to define boundaries of structure
01/01/2002US6335127 Charged beam mask having strut wider than charged beam, with shape that matches charged beam
01/01/2002US6335125 Photomask and method of manufacturing same
01/01/2002US6335124 Phase shift mask and phase shift mask blank
01/01/2002US6335104 Providing a copper pad surface; selectively depositing a protection layer of phosphorus or boron-containing metal alloy on the copper pad surface; depositing adhesion layer of noble metal
01/01/2002US6335077 For filling a via-hole formed in a green ceramic sheet
01/01/2002US6335056 Coating transparent conductive particle on a substrate, coating metal alkoxide or metal or metal salt and catalyst; drying heating
01/01/2002US6335049 Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
01/01/2002US6334962 Supplying moisture from reactor to semiconductor manufacturing line at low flow rate by feeding oxygen and hydrogen into reactor provided with platinum coating whereby oxygen reacts instantaneously with hydrogen to produce moisture
01/01/2002US6334960 Polymerization and solidification of fluid on transfer layer
01/01/2002US6334942 Providing resist on support so as to leave openings where metallic features are to be formed, depositing principal metal in openings, removing resist immediately adjacent metal, forming gaps, depositing cover metal
01/01/2002US6334929 Implanting dopant into back surface of iii-v semiconductor substrate to form doped region, performing plasma process to front surface of substrate after doping, wherein uniformity of plasma process is improved by presence of dopant
01/01/2002US6334928 Semiconductor processing system and method of using the same
01/01/2002US6334926 Modifying fluoropolymer by plasma pretreatment followed by thermal graft polymerization with concurrent lamination of metal in presence of composition including functional monomer at lapped interface between fluoropolymer and metal
01/01/2002US6334902 Method and apparatus for removing a liquid from a surface
01/01/2002US6334901 Apparatus for forming semiconductor crystal
01/01/2002US6334896 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
01/01/2002US6334810 Chemical mechanical polishing apparatus and method of using the same
01/01/2002US6334808 Method for processing peripheral portion of thin plate and apparatus therefor
01/01/2002US6334807 Chemical mechanical polishing in-situ end point system
01/01/2002US6334574 Identification device for IC loading tray
01/01/2002US6334567 Component and method for production thereof