Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/03/2002WO2002001629A1 Semiconductor device and method of manufacturing
01/03/2002WO2002001628A2 Formation of boride barrier layers using chemisorption techniques
01/03/2002WO2002001627A1 Semiconductor device and method manufacturing the same
01/03/2002WO2002001626A1 Method and apparatus for evaluating semiconductor wafer
01/03/2002WO2002001625A1 Method of resin-sealing electronic parts, and stencil printing plate used therefor
01/03/2002WO2002001624A1 Semiconductor component and method of manufacturing
01/03/2002WO2002001623A1 High frequency transistor device with antimony implantation and fabrication method thereof
01/03/2002WO2002001622A2 Novel non-crystalline oxides for use in microelectronic, optical, and other applications
01/03/2002WO2002001621A2 Method to restore hydrophobicity in dielectric films and materials
01/03/2002WO2002001620A2 Two step chemical mechanical polishing process
01/03/2002WO2002001619A1 Etching method
01/03/2002WO2002001617A1 Semiconductor wafer processing method and plasma etching apparatus
01/03/2002WO2002001616A1 Method for processing semiconductor wafer and semiconductor wafer
01/03/2002WO2002001615A2 Crystal structure control of polycrystalline silicon in a single wafer chamber
01/03/2002WO2002001613A2 Method and apparatus for wafer cleaning
01/03/2002WO2002001612A2 Mechanical clamper for heated substrates at die attach
01/03/2002WO2002001611A2 Electrostatic chuck and method of fabricating the same
01/03/2002WO2002001610A2 Apparatus and method for electro chemical deposition
01/03/2002WO2002001609A2 Cleaning method and solution for cleaning a wafer in a single wafer process
01/03/2002WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
01/03/2002WO2002001607A2 Method of producing trench capacitor buried strap
01/03/2002WO2002001603A2 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
01/03/2002WO2002001602A2 Method of manufacturing a charge-coupled image sensor
01/03/2002WO2002001568A2 Dynamic random access memory
01/03/2002WO2002001567A2 Structure and process for vertical transistor trench capacitor dram cell
01/03/2002WO2002001300A1 Stripping agent composition and method of stripping
01/03/2002WO2002001299A1 Development defect preventing process and material
01/03/2002WO2002001298A1 Multi-beam pattern generator
01/03/2002WO2002001295A1 Apparatus and method for forming photoresist pattern with target critical dimension
01/03/2002WO2002001294A1 Apparatus and method for compensating critical dimension deviations across photomask
01/03/2002WO2002001292A1 Device and method for cleaning articles used in the production of semiconductor components
01/03/2002WO2002001234A2 System for calibrating timing of an integrated circuit wafer tester
01/03/2002WO2002001232A1 Conductive contact
01/03/2002WO2002000971A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer
01/03/2002WO2002000967A1 Crucible supporting device, and method and device for filling material
01/03/2002WO2002000965A1 Corrosion protective agent
01/03/2002WO2002000962A1 System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator
01/03/2002WO2002000534A1 Apparatus and method for carrying substrate
01/03/2002WO2001092428A8 Heterostructure with rear-face donor doping
01/03/2002WO2001075958A3 Method for improving uniformity and reducing etch rate variation of etching polysilicon
01/03/2002WO2001073459A3 System and method for testing signal interconnections using built-in self test
01/03/2002WO2001071793A3 Method for forming high quality multiple thickness oxide layers by using high temperature descum
01/03/2002WO2001065595A3 A method of forming an opening or cavity in a substrate for receiving an electronic component
01/03/2002WO2001056063A3 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
01/03/2002WO2001054181A3 Process and apparatus for cleaning silicon wafers
01/03/2002WO2001050504A3 An improved method for buried anti-reflective coating removal
01/03/2002WO2001048811A3 A method for efficiently computing a number of integrated circuit dies
01/03/2002WO2001048795A3 Fluorine based plasma etch method for anisotropic etching of high open area silicon structures
01/03/2002WO2001048794A3 Enhanced etching/smoothing of dielectric surfaces
01/03/2002WO2001041973A3 Chemical-mechanical polishing method
01/03/2002WO2001041962A3 Non-contact workpiece holder
01/03/2002WO2001041191A3 Method and apparatus for forming an oxidized structure on a microelectronic workpiece
01/03/2002WO2001033609B1 Apparatus for cleaning semiconductor wafers
01/03/2002US20020002701 Automatic circuit generation apparatus and method, and computer program product for executing the method
01/03/2002US20020002700 Method for designing semiconductor device
01/03/2002US20020002699 Method of designing semiconductor device and method of manufacturing semiconductor device
01/03/2002US20020002697 Semiconductor integrated circuit designing method and system
01/03/2002US20020002422 Transfer apparatus for semiconductor process
01/03/2002US20020002415 Defect analysis method and process control method
01/03/2002US20020002265 Novolac polymer planarization films with high temperature stability
01/03/2002US20020002031 Projected gimbal point drive
01/03/2002US20020002029 Polishing method and apparatus
01/03/2002US20020002028 Polishing method and polishing apparatus
01/03/2002US20020002026 Finishing element with finishing aids
01/03/2002US20020002025 Carrier head with a substrate detector
01/03/2002US20020002024 Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
01/03/2002US20020001981 Method and apparatus for protecting and strengthening electrical contact interfaces
01/03/2002US20020001978 Method for manufacturing double-faced semiconductor circuits
01/03/2002US20020001976 Chamber for constructing a film on a semiconductor wafer
01/03/2002US20020001975 Method of generating a circuit pattern used for fabricating a semiconductor device
01/03/2002US20020001974 Atomic layer deposition (ALD) using zirconium tetra-tert-butoxide as a zirconium source material instead of conventional ZrCl4, so resulting film is chlorine-free
01/03/2002US20020001973 To form a hydrophobic coating on the film, using a surface modification agent such as oligomer or polymer reactive with silanols on the silica film; dielectric films and integrated circuits
01/03/2002US20020001972 Oxidation of silicon using fluorine implants
01/03/2002US20020001971 Made by exposing an insulation layer that includes oxygen to a metal precursor reactive with oxygen to produce a first metal oxide layer on the insulation layer
01/03/2002US20020001970 Semiconductor structure useful in a self-aligned contact etch and method for making same
01/03/2002US20020001969 Method of forming an Al2O3 film in a semiconductor device
01/03/2002US20020001968 Comprising ammonium fluoride, an inorganic acid component, and an oxidizing agent, at pH of seven to eight; use in forming isolation structures, shallow trench isolation
01/03/2002US20020001967 Etching method and etching apparatus
01/03/2002US20020001966 Process for producing semiconductor package and structure thereof
01/03/2002US20020001965 Technique for producing small islands of silicon on insulator
01/03/2002US20020001963 Fabrication method of semiconductor integrated circuit device
01/03/2002US20020001962 Using cleaning fluid that will not corrode silicon or tungsten materials, comprising an ethylene oxide-propylene oxide adduct or polymer, optionally endcapped with alcohols, amines or amino acids, a hydroxide, and organic solvent
01/03/2002US20020001961 Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film
01/03/2002US20020001960 Material removal method for forming a structure
01/03/2002US20020001959 Method of manufacturing semiconductor device, and semiconductor device manufactured thereby
01/03/2002US20020001958 Method for manufacturing semiconductor device
01/03/2002US20020001957 Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals
01/03/2002US20020001955 Removal of residue from a substrate
01/03/2002US20020001954 Dual damascene process
01/03/2002US20020001953 Method and system for semiconductor crystal production with temperature management
01/03/2002US20020001952 Non metallic barrier formations for copper damascene type interconnects
01/03/2002US20020001951 Non metallic barrier formations for copper damascene type interconnects
01/03/2002US20020001950 Method of manufacturing copper wiring in a semiconductor device
01/03/2002US20020001949 Low sheet resistance of titanium salicide process
01/03/2002US20020001948 Method of manufacturing a semiconductor device
01/03/2002US20020001947 Semiconductor processing method using high pressure liquid media treatment
01/03/2002US20020001946 Method and fabricating metal interconnection with reliability using ionized physical vapor deposition
01/03/2002US20020001945 Method of manufacturing metal pattern of semiconductor device
01/03/2002US20020001944 In-situ co-deposition of Si iN diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
01/03/2002US20020001943 Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same