Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/16/2002CN1331486A Method of forming micro drawing of semiconductor device
01/16/2002CN1331257A Organic anti-reflecting paint polymer, anti-reflecting paint compsns. and its prepn. method
01/16/2002CN1331256A Organic anti-reflecting paint polymer, anti-reflecting paint compsns. and its prepn. method
01/16/2002CN1331255A Organic anti-reflecting paint polymer, anti-reflecting paint compsns. contg. same and its prepn. method
01/16/2002CN1331254A Organic anti-reflecting cladding polymer, anti-reflecting cladding compsns. contg. same and its prepn. method
01/16/2002CN1331253A Organic anti-reflecting paint polymer, anti-reflecting paint compsns. and its prepn. method
01/16/2002CN1078014C Semiconductor device and process for fabricating same
01/16/2002CN1078013C Pallet installation table for processor
01/16/2002CN1078012C Prodn. tech. for mfg. semiconductor device
01/15/2002USRE37505 Stacked capacitor construction
01/15/2002US6339730 Processing system
01/15/2002US6339653 Inspection data analyzing system
01/15/2002US6339557 Charge retention lifetime evaluation method for nonvolatile semiconductor memory
01/15/2002US6339556 Semiconductor memory device
01/15/2002US6339549 Semiconductor storage apparatus having main bit line and sub bit line
01/15/2002US6339543 Writing method for a magnetic immovable memory and a magnetic immovable memory
01/15/2002US6339540 Content-addressable memory for virtual ground flash architectures
01/15/2002US6339527 Thin film capacitor on ceramic
01/15/2002US6339471 Projection exposure apparatus
01/15/2002US6339467 Projection exposure apparatus and device manufacturing method
01/15/2002US6339456 Active matrix liquid crystal display apparatus with parasitic capacitance fluctuation correction
01/15/2002US6339388 Mixed analog and digital integrated circuit and testing method thereof
01/15/2002US6339359 Integrated circuit apparatus
01/15/2002US6339358 Semiconductor integrated circuit
01/15/2002US6339344 Semiconductor integrated circuit device
01/15/2002US6339342 Semiconductor device and electronic equipment using the same
01/15/2002US6339341 Programmable logic LSI
01/15/2002US6339337 Method for inspecting semiconductor chip bonding pads using infrared rays
01/15/2002US6339297 Plasma density information measuring method, probe used for measuring plasma density information, and plasma density information measuring apparatus
01/15/2002US6339261 Semiconductor device and process of producing same
01/15/2002US6339260 Wire arrayed chip size package
01/15/2002US6339258 Low resistivity tantalum
01/15/2002US6339257 Semiconductor device
01/15/2002US6339251 Wafer grooves for reducing semiconductor wafer warping
01/15/2002US6339250 Semiconductor device
01/15/2002US6339246 Tungsten silicide nitride as an electrode for tantalum pentoxide devices
01/15/2002US6339245 Nitride overhang structure for the silicidation of transistor electrodes with shallow junctions
01/15/2002US6339243 High voltage device and method for fabricating the same
01/15/2002US6339242 Semiconductor device lacking steeply rising structures and fabrication method of the same
01/15/2002US6339241 Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch
01/15/2002US6339240 Semiconductor memory device
01/15/2002US6339238 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
01/15/2002US6339237 Semiconductor device having a memory cell region and peripheral circuit region and method of manufacturing the same
01/15/2002US6339235 Semiconductor integrated circuit device having a clock network capable of transmitting an internal clock signal with a reduced skew
01/15/2002US6339234 Semiconductor integrated circuit device with enhanced protection from electrostatic breakdown
01/15/2002US6339233 Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
01/15/2002US6339232 Semiconductor device
01/15/2002US6339231 Gate commutated turn-off thyristor module
01/15/2002US6339230 Method for manufacturing a liquid crystal display
01/15/2002US6339229 Test structure for insulation-film evaluation
01/15/2002US6339228 DRAM cell buried strap leakage measurement structure and method
01/15/2002US6339210 Circuit and method for heating an adhesive to package or rework a semiconductor die
01/15/2002US6339206 Apparatus and method for adjusting density distribution of a plasma
01/15/2002US6339191 Prefabricated semiconductor chip carrier
01/15/2002US6339029 Integrated circuit device; substrate multilayers; etching via through layer for depositing barrier, copper layer; annealing, electrochemical deposition improving etching capability
01/15/2002US6339028 Vacuum loadlock ultra violet bake for plasma etch
01/15/2002US6339027 Process for borderless stop in tin via formation
01/15/2002US6339026 Of at least one of rb, sr, fr, and ra; exposure to slurry and a polishing pad; electrolytic substance-containing liquid exposure; electrochemical degradation prevention at array of phs
01/15/2002US6339025 Method of fabricating a copper capping layer
01/15/2002US6339024 Reinforced integrated circuits
01/15/2002US6339023 Multistep cvd from a mixed gas containing tungsten hexafluoride and silane; in third step adding hydrogen to gas mix
01/15/2002US6339022 Chemical mechanical planarization with a slurry containing a passivation agent like benzotriazole; non-oxidizing annealing atmosphere
01/15/2002US6339021 Semiconductor substrate; avoiding native oxide contamination with titanium capping or atomic layer; nickel silicide film for integrated circuit; nickel diffusion barrier; titanium nitride layer traps atmospheric oxygen
01/15/2002US6339020 Alternating layers of copper and metal carbide forming a multilayer structure with a cubic or metastable cubic structure
01/15/2002US6339019 Method of manufacturing semiconductor device having reduced connection failure between wiring layers
01/15/2002US6339018 Silicide block bounded device
01/15/2002US6339017 Hard mask for integrated circuit fabrication
01/15/2002US6339016 Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
01/15/2002US6339015 Method of fabricating a non-volatile semiconductor device
01/15/2002US6339014 Aluminum-and/or gallium nitride at growth temperature greater than 900 degrees; n-type junctions doped with arsenic, phosphorus or compounds, such as arsene or phosphine
01/15/2002US6339013 Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
01/15/2002US6339011 Method of forming semiconductive active area having a proximity gettering region therein and method of processing a monocrystalline silicon substrate to have a proximity gettering region
01/15/2002US6339010 Semiconductor element forming process having a step of separating film structure from substrate
01/15/2002US6339009 Method of manufacturing capacitor of semiconductor device
01/15/2002US6339008 Method of manufacturing a semiconductor memory device
01/15/2002US6339007 Capacitor stack structure and method of fabricating description
01/15/2002US6339006 Flash EEPROM cell and method of manufacturing the same
01/15/2002US6339005 Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET
01/15/2002US6339004 Method of forming shallow trench isolation for preventing torn oxide
01/15/2002US6339003 Method of fabricating a semiconductor device
01/15/2002US6339002 Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
01/15/2002US6339001 Formulation of multiple gate oxides thicknesses without exposing gate oxide or silicon surface to photoresist
01/15/2002US6339000 Forming top oxide layer of interpoly dielectric stack using low pressure chemical vapor deposition of tetraethyl orthosilicate, densifying in steam ambience
01/15/2002US6338999 Method for forming metal capacitors with a damascene process
01/15/2002US6338998 Embedded DRAM fabrication method providing enhanced embedded DRAM performance
01/15/2002US6338997 Method of fabricating semiconductor device having improved bias dependability
01/15/2002US6338996 Semiconductor memory device production method
01/15/2002US6338995 High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same
01/15/2002US6338994 Semiconductor device and method of fabricating thereof
01/15/2002US6338993 Method to fabricate embedded DRAM with salicide logic cell structure
01/15/2002US6338992 Programmable read only memory in CMOS process flow
01/15/2002US6338991 Semiconductor device and method for manufacturing the same
01/15/2002US6338990 Method for fabricating thin-film transistor
01/15/2002US6338989 Array substrate for use in liquid crystal display device and method of manufacturing the same
01/15/2002US6338988 Method for fabricating self-aligned thin-film transistors to define a drain and source in a single photolithographic step
01/15/2002US6338987 Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
01/15/2002US6338986 Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same
01/15/2002US6338985 Making chip size semiconductor packages
01/15/2002US6338984 Encaapsulation signal leads, die pad, supports
01/15/2002US6338982 Enhancements in framed sheet processing