Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/15/2002US6338981 Centrifugally assisted underfill method
01/15/2002US6338980 Method for manufacturing chip-scale package and manufacturing IC chip
01/15/2002US6338973 Semiconductor device and method of fabrication
01/15/2002US6338971 Method of correcting alignment
01/15/2002US6338970 Stronium bismuth tantalate (sbt) double layer structure in which each layer is different in crystalline structure from the other, made at different condition of thermal treatment; allows sbt film to be denser and improves surface roughness
01/15/2002US6338930 Positive photoresist layer and a method for using the same
01/15/2002US6338925 Semiconductor wafers, calibration, calculation and times
01/15/2002US6338923 Photolithography mask having monitoring marks and manufacturing method thereof
01/15/2002US6338906 Sintering ceramic matrices and interconnecting pore structure
01/15/2002US6338874 Vapor deposition on a support in a chamber on a silicon film
01/15/2002US6338868 Forming coatings with silane from polysilazane and dialkyl alkanol amine for coatings
01/15/2002US6338813 Molding method for BGA semiconductor chip package
01/15/2002US6338809 Aerosol method and apparatus, particulate products, and electronic devices made therefrom
01/15/2002US6338805 Process for fabricating semiconductor wafers with external gettering
01/15/2002US6338767 Circuit component built-in module and method for producing the same
01/15/2002US6338759 Metal organic chemical vapor deposition apparatus and deposition method
01/15/2002US6338756 In-situ post epitaxial treatment process
01/15/2002US6338755 Method for producing a single crystalline member
01/15/2002US6338744 Dispersion of silica particles in water, particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44. synthesized in a liquid phase and produced without passing through a drying step; high scratch resistance
01/15/2002US6338743 High ph of 9.5-13, used for si and metal surfaces of semiconductor wafers, silica in aqueous solution of a strong base selected from tetramethylammonium hydroxide, koh or naoh.
01/15/2002US6338671 Apparatus for supplying polishing liquid
01/15/2002US6338670 Method and system of manufacturing slurry for polishing, and method and system of manufacturing semiconductor devices
01/15/2002US6338626 Load-lock mechanism and processing apparatus
01/15/2002US6338604 Lid latch mechanism for clean box
01/15/2002US6338582 Substrate delivery apparatus and coating and developing processing system
01/15/2002US6338474 Air feeder provided with by-pass bypassing cooling section, substrate processing apparatus including the same, and air supply method
01/15/2002US6338409 Reticle SMIF pod in situ orientation
01/15/2002US6338313 System for the plasma treatment of large area substrates
01/15/2002US6338312 Integrated ion implant scrubber system
01/15/2002US6338196 Method of forming heat sinks having fully anodized surfaces
01/15/2002US6338195 Connection sheet and electrode connection structure for electrically interconnecting electrodes facing each other, and method using the connection sheet
01/15/2002CA2213542C Chip size package
01/10/2002WO2002003763A2 Vacuum plasma processor apparatus and method
01/10/2002WO2002003517A1 Iii group nitride compound semiconductor light emitting element
01/10/2002WO2002003482A1 Field effect transistor
01/10/2002WO2002003474A2 N-type nitride semiconductor laminate and semiconductor device using same
01/10/2002WO2002003472A2 Aerosol silicon nanoparticles for use in semiconductor device fabrication
01/10/2002WO2002003471A1 Hybrid semiconductor structure and device
01/10/2002WO2002003470A1 Method of manufacturing a bipolar transistor semiconductor device
01/10/2002WO2002003469A1 Power semiconductor component and method for producing the same
01/10/2002WO2002003466A2 Mos transistor integration
01/10/2002WO2002003462A2 Self retained pressure connection
01/10/2002WO2002003461A2 Ball limiting metallurgy for input/outputs and methods of fabrication
01/10/2002WO2002003459A2 High-speed low-power semiconductor memory architecture
01/10/2002WO2002003458A1 Semiconductor device and its manufacturing method
01/10/2002WO2002003457A2 Via first dual damascene process for copper metallization
01/10/2002WO2002003456A2 Semiconductor device and method of formation
01/10/2002WO2002003455A2 Highly conformal titanium nitride deposition process for high aspect ratio structures
01/10/2002WO2002003454A2 Method for etching dual damascene structures in organosilicate glass
01/10/2002WO2002003453A1 Method for applying a textured insulation layer to a metal layer
01/10/2002WO2002003452A1 Apparatus for producing and inspecting semiconductor
01/10/2002WO2002003450A2 Automated determination and display of the physical location of a failed cell in an array of memory cells
01/10/2002WO2002003449A2 Apparatus and method for investigating semiconductor wafers
01/10/2002WO2002003448A1 Method of determination of silicon p-n junction depth
01/10/2002WO2002003447A1 Device and method for forming bump
01/10/2002WO2002003446A1 Method and apparatus for applying a protective over-coating to a ball-grid-array (bga) structure
01/10/2002WO2002003445A1 Method and apparatus for forming a silicon wafer with a denuded zone
01/10/2002WO2002003444A1 Method and apparatus for forming a silicon wafer with a denuded zone
01/10/2002WO2002003443A1 Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
01/10/2002WO2002003442A1 Fabrication process of a semiconductor device
01/10/2002WO2002003441A1 Operation monitoring method for treatment apparatus
01/10/2002WO2002003440A1 Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
01/10/2002WO2002003439A2 Process for selectively etching doped silicon dioxide over undoped silicon dioxide and silicon nitride
01/10/2002WO2002003438A1 Method and apparatus for rapid thermal processing (rtp) of semiconductor wafers
01/10/2002WO2002003437A1 Hybrid semiconductor structure and device
01/10/2002WO2002003436A1 Thin compound semiconductor structure
01/10/2002WO2002003435A1 Hot plate for semiconductor manufacture and testing
01/10/2002WO2002003434A1 Ceramic heater for semiconductor manufacturing/testing apparatus
01/10/2002WO2002003433A2 Wheel and conveyor system for transporting semiconductor wafers and method for transferring wafers
01/10/2002WO2002003432A2 Process for etching silicon wafers
01/10/2002WO2002003431A2 Apparatus and methods for semiconductor wafer processing equipment
01/10/2002WO2002003430A2 Aerosol process for fabricating discontinuous floating gate microelectronic devices
01/10/2002WO2002003429A2 Integrated electronic hardware for wafer processing control and diagnostic
01/10/2002WO2002003428A2 Silicon fixtures for supporting wafers during thermal processing and method of fabrication
01/10/2002WO2002003426A2 Process for the post etch stripping of photoresist with hydrogen
01/10/2002WO2002003425A1 System for uniformly heating photoresist
01/10/2002WO2002003424A1 Storage and buffer system with transport elements
01/10/2002WO2002003423A2 Capacitor and capacitor contact process for stack capacitor drams
01/10/2002WO2002003422A2 Integrated circuits packaging system and method
01/10/2002WO2002003420A2 Integrated circuit radio architectures
01/10/2002WO2002003419A2 Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
01/10/2002WO2002003416A2 Integrated electronic hardware for wafer processing control and diagnostic
01/10/2002WO2002003415A2 Switched uniformity control
01/10/2002WO2002003261A1 Method and system for hierarchical metal-end, enclosure and exposure checking
01/10/2002WO2002003160A1 Method and device for thermally treating objects
01/10/2002WO2002003141A2 Network-based photomask data entry interface and instruction generator for manufacturing photomasks
01/10/2002WO2002002841A1 Wheel-type wafer holder comprising a pressing element
01/10/2002WO2002002707A1 Silane containing polishing composition for cmp
01/10/2002WO2002002706A1 Polishing composition for metal cmp
01/10/2002WO2002002574A1 Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
01/10/2002WO2002002458A1 Method for production of a semiconductor component and a semiconductor component produced by said method
01/10/2002WO2002002445A1 Dual degas/cool loadlock cluster tool
01/10/2002WO2002002424A1 Disposable syringe dispenser system
01/10/2002WO2002002282A1 Edge-gripping pre-aligner
01/10/2002WO2002002279A2 Grooved polishing pads and methods of use
01/10/2002WO2002002276A2 Projected gimbal point drive
01/10/2002WO2002002275A1 Wafer carrier with groove for decoupling retainer ring from wafer
01/10/2002WO2002002274A2 Base-pad for a polishing pad
01/10/2002WO2002002272A1 Oscillating fixed abrasive cmp system and methods for implementing the same
01/10/2002WO2002002269A1 Polishing pad grooving method and apparatus