Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2002
05/23/2002US20020060363 Reliability barrier integration for Cu application
05/23/2002US20020060362 Wiring structure in semiconductor device and method for forming the same
05/23/2002US20020060361 Semiconductor package for three-dimensional mounting, fabrication method thereof , and semiconductor device
05/23/2002US20020060360 Integrated fluid supply apparatus, sealing device used there, and semiconductor manufacturing system using it
05/23/2002US20020060357 Quad flat non-leaded package structure for housing CMOS sensor
05/23/2002US20020060355 Semiconductor wafer isolation structure formed by field oxidation
05/23/2002US20020060354 Semiconductor device and method for fabricating the same
05/23/2002US20020060353 Semiconductor device with heavily doped shallow region and process for fabricating the same
05/23/2002US20020060352 Semiconductor integrated circuit
05/23/2002US20020060351 Semiconductor integrated circuit with resistor and method for fabricating thereof
05/23/2002US20020060349 Low resistance contact structure for a select transistor of EEPROM memory cells in a NO-DPCC process
05/23/2002US20020060348 System and device including a barrier layer
05/23/2002US20020060347 Semiconductor read-only memory configuration with substrate contacts and polysilicon bridge cells
05/23/2002US20020060346 Method for making transistor structure having silicide source/drain extensions
05/23/2002US20020060342 Semiconductor device with chamfered substrate and method of making the same
05/23/2002US20020060341 Semiconductor device
05/23/2002US20020060339 Semiconductor device having field effect transistor with buried gate electrode surely overlapped with source region and process for fabrication thereof
05/23/2002US20020060338 Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls and vertical field effect transistors fabricated thereby
05/23/2002US20020060335 Semiconductor device incorporating an electrical contact to an internal conductive layer and method for making the same
05/23/2002US20020060334 Semiconductor integrated circuit device and method of manufacturing the same
05/23/2002US20020060333 Semiconductor apparatus having a charge pump circuit
05/23/2002US20020060332 Semiconductor integrated circuit device and manufacturing method thereof
05/23/2002US20020060331 Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor
05/23/2002US20020060328 Semiconductor device
05/23/2002US20020060327 Metallic bridge structure for hetero-junction bipolar transistor
05/23/2002US20020060324 Zinc oxide crystal luminescent element with improved orientation/crystallinity
05/23/2002US20020060323 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
05/23/2002US20020060322 Thin film transistor having high mobility and high on-current and method for manufacturing the same
05/23/2002US20020060321 Minimally- patterned, thin-film semiconductor devices for display applications
05/23/2002US20020060320 Semiconductor device and method of manufacturing the same
05/23/2002US20020060319 Crystal thin film and production method therefor
05/23/2002US20020060317 Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
05/23/2002US20020060315 Equipment for communication system and semiconductor integrated circuit device
05/23/2002US20020060307 With a mineral acid and a peroxide
05/23/2002US20020060297 Substrate for a transfer mask, transfer mask, and method of manufacturing the transfer mask
05/23/2002US20020060296 Lithographic apparatus, integrated circuit device manufacturing method, and integrated circuit device manufactured thereby
05/23/2002US20020060202 Etching with a chemical liquid having a pH >/= 12 or and an oxidation-reduction potential of >/= 300 mVvsSHE
05/23/2002US20020060201 Ions of an ion beam with predetermined polarity are extracted from an ion source and accelerated, which is then reflected and neutralizedm
05/23/2002US20020060172 Installation for processing wafers
05/23/2002US20020060160 Method and structure for producing bumps on an IC package substrate
05/23/2002US20020060134 Magnetic carrying device
05/23/2002US20020060085 Conductive cap, electronic component, and method of forming insulating film of conductive cap
05/23/2002US20020060084 Flip-chip package with underfill dam that controls stress at chip edges
05/23/2002US20020059981 Lower electrode design for higher uniformity
05/23/2002US20020059947 Substrate cleaning apparatus
05/23/2002US20020059943 Supplying clean air humidified to control a relative humidity within a predetermined range toward a surface level in the cleaning bath downwards vertically, together with exhaust of air of the cleaning draft at a predetermined exhaust rate
05/23/2002US20020059900 In-situ post epitaxial treatment process
05/23/2002US20020059899 Manufacturing method of semiconductor devices by using dry etching technology
05/23/2002US20020059898 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties.
05/23/2002US20020059755 Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
05/23/2002US20020059726 Method of manufacturing tandem thin-film solar cell
05/23/2002US20020059722 Method of mounting a semiconductor device to a substrate and a mounted structure
05/23/2002US20020059686 Cleaning processing system and cleaning processing apparatus
05/23/2002DE10156139A1 III-V composite semiconductor used for light-emitting diodes contains a p-type doping element
05/23/2002DE10144894A1 Half tone type phase shift mask blank manufacturing method for photolithography, involves implementing thermal treatment of translucent film at specified temperature
05/23/2002DE10131249A1 Production of a film or a layer of semiconductor material comprises producing structures of repeating recesses on the surface of a semiconductor material
05/23/2002DE10115248A1 Wire bonding method for wafer level chip scale package, involves forming metal bump directly on metal pad which is provided on wafer surface, without forming under bump metallurgy layer
05/23/2002DE10114764A1 Method of production of integrated circuit with a DRAM treats device with hydrogen is plasma reactor
05/23/2002DE10065895C1 Electronic component used as an integrated circuit comprises a screen for electromagnetic scattering, a semiconductor chip made from a semiconductor substrate and an electrically conducting trenched layer
05/23/2002DE10057635A1 Method for processing a substrate comprises applying a photolacquer layer to the substrate and structuring so that some regions of the substrate are covered with the photolacquer
05/23/2002DE10057491A1 Process for introducing a liquid starting material brought into gas form into a chemical vapour deposition (CVD) reactor comprises forming an aerosol, vaporizing the heat supply and removing the heat of vaporization
05/23/2002DE10057163A1 Method of manufacturing semiconductor chips with Schottky transitions by applying a metal contact direct to the p doped inner zone
05/23/2002DE10057134A1 Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed
05/23/2002DE10056782A1 Method for dynamic manipulation and/or adjustment in the position of a subassembly in an optical system in a sub-mm range, uses actuators with motion detectors and interconnected sensors to move the subassembly
05/23/2002DE10056476A1 Radiation-emitting semiconductor body used as a light emitting diode comprises a radiation-producing layer sequence and a window layer having one or a number of subsequent aluminum gallium arsenide layers produced by liquid phase epitaxy
05/23/2002DE10056387A1 Cooling device for electronic component and production method has cooling fins fixed permanently on one side of the baseplate groove only
05/23/2002DE10056297A1 Integrated semiconductor memory has connection pads which can support different functions in different stages of production
05/23/2002DE10056295A1 Production of a ferroelectric capacitor used in the production of highly integrated non-volatile storage capacitors, especially FeRAMs, comprises inserting a dielectric between precious metal electrodes
05/23/2002DE10056256A1 Production of a semiconductor device used as a DRAM involves forming a deep trench in the substrate and forming a dielectric filler layer
05/23/2002DE10056162A1 Process for anisotropically etching thin metal foils, e.g. silver foils, comprises repeatedly etching using an oxidizing plasma or reactive gas in a first step as etching component
05/23/2002DE10056159A1 Magneto-resistive random-access memory device uses selection transistors of wide channel width associated with several magnetic tunnel junction memory cells
05/23/2002DE10055936A1 Magnetoresistive memory has optimized line shape so that magnetic field components in plane of cell field decrease rapidly with increasing distance from matrix intersection
05/23/2002DE10055848A1 Method of manufacturing a double sided processed integrated circuit forming a contact structure for connecting metallizing structures of each individual chip
05/23/2002DE10055765A1 Verfahren zur Herstellung eines MOS-Feldeffekt-Transistors mit Rekombinationszone A method for producing a MOS-field effect transistor with recombination
05/23/2002DE10055763A1 Production of a high temperature resistant joint between wafers comprises forming a liquid layer of alcohols and polymerized silicic acid molecules on a wafer, partially vaporizing the alcohols, joining the two wafers, and heat treating
05/23/2002DE10055712A1 Production of trench capacitors in a p-doped silicon layer used for DRAMs and ferroelectric semiconductor storage devices comprises using electrodes and a capacitor dielectric
05/23/2002DE10055711A1 Production of a trench capacitor used for DRAMs and ferroelectric semiconductor storage devices comprises applying an electrolyte to a substrate followed by an electrical voltage
05/23/2002DE10055710A1 Production of optoelectronic semiconductor element used as LED or laser diode comprises preparing a layer of amorphous Group III element nitride containing a rare earth element, and heat treating whilst inserting the rare earth element
05/23/2002DE10045042C1 MRAM-Modulanordnung MRAM module arrangement
05/23/2002CA2427300A1 Method of forming shallow trench isolation in silicon
05/22/2002EP1207728A1 Automatic seperator and method to obtain circuits for microelectronics
05/22/2002EP1207612A1 Power supply apparatus for supplying electric power to substrate carrier container
05/22/2002EP1207564A2 Magnetoresistive device and/or multiple element magnetoresistive device
05/22/2002EP1207562A2 Semiconductor device with heavily doped shallow region and process for fabricating the same
05/22/2002EP1207558A1 Contact structure for ferroelectric memory device
05/22/2002EP1207555A1 Flip-chip on film assembly for ball grid array packages
05/22/2002EP1207552A2 Non-volatile-semiconductor memory device and fabrication process thereof
05/22/2002EP1207551A2 Semiconductor device with a conducting structure and related method
05/22/2002EP1207550A1 Method of etching and method of plasma treatment
05/22/2002EP1207549A2 Method for fabricating a semiconductor device
05/22/2002EP1207548A2 Method and apparatus for loading and unloading wafers
05/22/2002EP1207538A1 Magnetic Random Access Memory with improved breakdown voltage
05/22/2002EP1207470A2 Concurrent logical and physical construction of voltage islands for mixed supply voltage designs
05/22/2002EP1207425A2 Exposure apparatus and maintenance method
05/22/2002EP1207423A1 Chemically amplifying type positive resist composition
05/22/2002EP1207378A1 Semiconductor pressure sensor and pressure sensing device
05/22/2002EP1207217A1 Method of forming an interlayer insulating film
05/22/2002EP1207215A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same
05/22/2002EP1207141A1 Synthetic quartz glass member, photolithography apparatus, and method for producing photolithography apparatus
05/22/2002EP1207048A1 A process and an apparatus for the formation of patterns in films using temperature gradients