Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2002
05/16/2002US20020056859 Field effect transistor with reduced gate delay and method of fabricating the same
05/16/2002US20020056857 I/O cell placement method and semiconductor device
05/16/2002US20020056856 Saw singulated leadless plastic chip carrier
05/16/2002US20020056851 High voltage integrated switching devices on a bonded and trenched silicon substrate
05/16/2002US20020056846 Nitride semiconductor light emitting device and apparatus including the same
05/16/2002US20020056840 Epitaxial growth of nitride compound semiconductor
05/16/2002US20020056839 Method of crystallizing a silicon thin film and semiconductor device fabricated thereby
05/16/2002US20020056838 Thin film transistor array, method of producing the same, and display panel using the same
05/16/2002US20020056837 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same
05/16/2002US20020056829 Ruthenium and ruthenium dioxide removal method and material
05/16/2002US20020056814 Method and device for irradiating an ion beam, and related method and device thereof
05/16/2002US20020056813 Target locking system for electron beam lithography
05/16/2002US20020056742 Methods and systems for attaching substrates to one another using solder structures having portions with different melting points
05/16/2002US20020056741 Application of wire bonding technology on wafer bump, wafer level chip scale package structure and the method of manufacturing the same
05/16/2002US20020056740 Flip chip bonding method
05/16/2002US20020056706 Method for controlling wire balls in electronic bonding
05/16/2002US20020056701 Etching, shaping, or patterning layer or films with ceric ammonium nitrate in fabrication of semiconductor systems
05/16/2002US20020056700 Method and system for manufacturing semiconductor device
05/16/2002US20020056699 Method for eliminating surface roughness in metal lines
05/16/2002US20020056697 Ruthenium and ruthenium dioxide removal method and material
05/16/2002US20020056647 Plating method and plating apparatus
05/16/2002US20020056646 Vertically configured chamber used for multiple processes
05/16/2002US20020056570 Molded stiffener for flexible circuit molding
05/16/2002US20020056562 Bladder insert for encapsulant displacement
05/16/2002US20020056548 Heat exchanger
05/16/2002US20020056523 Apparatus for sticking a tape onto a semiconductor wafer and method of sticking the tape
05/16/2002US20020056519 Controlled cleavage using patterning
05/16/2002US20020056505 Electrical connecting device and electrical connecting method
05/16/2002US20020056471 Liquid processing apparatus
05/16/2002US20020056417 Substrate processing apparatus and substrate processing method
05/16/2002US20020056416 With calcium carbonate; papermaking; continuous process
05/16/2002US20020056415 Apparatus and method for production of solar cells
05/16/2002US20020056414 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition
05/16/2002US20020056413 Chemical solution coating apparatus
05/16/2002US20020056412 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
05/16/2002US20020056347 Method and system for cutting integrated circuit packages
05/16/2002US20020056311 Trap apparatus
05/16/2002US20020056205 Alignment marks
05/16/2002US20020056190 Electronic component transfer system and method of transferring electronic components
05/16/2002DE10152933A1 Positonseinstellvorrichtung der Beschickungsplattform in einer Flächenmontagevorrichtung Positonseinstellvorrichtung the loading platform in a surface mount device
05/16/2002DE10150163A1 Cleaning semiconductor wafers after mechanical processing comprises cleaning wafers with tenside solution, rinsing with water and drying
05/16/2002DE10149691A1 Integrierte Halbleiterschaltung mit Varactorbauteilen A semiconductor integrated circuit with Varactorbauteilen
05/16/2002DE10147761A1 Verfahren zur Herstellen von Siliciumwafern Method for producing silicon wafers
05/16/2002DE10147132A1 Herstellungssystem für Halbleiterbauteile sowie Elektronenstrahl-Belichtungsvorrichtung Manufacturing system for semiconductor devices as well as electron beam exposure apparatus
05/16/2002DE10141948A1 Halbleiterspeichervorrichtung und Hersttelungsverfahren dafür A semiconductor memory device and for Hersttelungsverfahren
05/16/2002DE10129289A1 Halbleitervorrichtung mit einer Diode für eine Eingangschutzschaltung einer MOS-Vorrichtung und Verfahren zu deren Herstellung A semiconductor device comprising a diode for input protection circuit of a MOS device and process for their preparation
05/16/2002DE10128904A1 Substrat-Verarbeitungsvorrichtung Substrate processing apparatus
05/16/2002DE10124413A1 Halbleiter-Vorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
05/16/2002DE10111755C1 Production of a storage cell used in DRAMs comprises using a multiple step process in which a word line contact is eventually formed to electrically connect the gate to the word line
05/16/2002DE10105164A1 Semiconductor chip contacting method has chip transfer tool mounting semiconductor chips in given layout on flexible substrate before fixing via common chip fixing tool
05/16/2002DE10056029A1 Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures
05/16/2002DE10055001A1 Speicheranordnung mit einem zentralen Anschlussfeld Memory array with a central connector panel
05/16/2002DE10054937A1 Automatic semiconductor imaging mask designing method with mask designated cut-out area displaced by offset vector dependent on implantation angle
05/16/2002DE10054566A1 Semiconductor substrate has functional circuit structures and dummy structures formed in insulation trough enclosed by peripheral diffusion zone provided with peripheral contact diffusion zone
05/16/2002DE10054190A1 Planarizing insulating region used in production of ULSI switches comprises forming connecting surface oxide layer, first nitride layer, and oxide sacrificial layer
05/16/2002DE10054159A1 Verfahren zur Montage von Halbleiterscheiben Method for mounting semiconductor wafers
05/16/2002DE10054145A1 Method for identifying the best tool in a semiconductor production line, requires outputting a weighted yield difference for each tool
05/16/2002DE10054109A1 Verfahren zum Bilden eines Substratkontakts in einem Feldeffekttransistor, der über einer vergrabenen Isolierschicht gebildet ist A method for forming a substrate contact in a field effect transistor which is formed over a buried insulating layer
05/16/2002DE10054045A1 Work table e.g. for ultra-high vacuum device, has table plate provided as film material covering separating drive from working environment
05/16/2002DE10054038A1 Device used in production of electronic components comprises plate-like bodies, one having upper side with pattern made from recesses
05/16/2002DE10053915A1 Production of integrated circuit comprises applying metallization layers to circuit substrate, and forming hard mask at predetermined temperature which effects phase conversion
05/16/2002DE10053780A1 Verfahren zur Strukturierung einer Siliziumoxid-Schicht A method for patterning a silicon oxide layer
05/16/2002DE10053467A1 Forming contacts in ICs involves chemically-mechanically polishing structure resulting from applying mask layer, forming opening, etching contact hole, applying liner, contact material
05/16/2002DE10053461A1 Production of a trench capacitor used in DRAM storage cells includes forming a trench in a substrate using a mask, forming an insulating collar, and growing hemispherical silicon grains in trench
05/16/2002DE10053428A1 Verfahren zur Herstellung eines DMOS-Transistors A process for the preparation of a DMOS transistor
05/16/2002DE10053232A1 Semiconductor substrate conveying module in semiconductor manufacture, has mechanical connecting elements in side walls which coact with corresponding connecting element of workstation
05/16/2002DE10053198A1 Verfahren zum lokalen Ätzen A method of etching local
05/16/2002DE10053172A1 Kontaktierungsstruktur für einen ferroelektrischen Speicherkondensator und Verfahren zu ihrer Herstellung Contacting structure for a ferroelectric storage capacitor and process for their preparation
05/16/2002DE10053171A1 Production of ferroelectric or paraelectric layer containing metal oxide comprises preparing substrate, and applying metal oxide-containing layer on substrate
05/16/2002DE10053170A1 Speicherkondensator und zugehörige Kontaktierungsstruktur sowie Verfahren zu deren Herstellung Storage capacitor, and associated contact-making structure, as well as processes for their preparation
05/16/2002DE10053111A1 Production of field effect structure used in electronic devices comprises preparing substrate with gate region arranged between drain and source, and producing a germanium sacrificial layer
05/16/2002DE10052762A1 Verfahren und Vorrichtung zum Reinigen einer Halbleiterscheibe Method and apparatus for cleaning a semiconductor wafer
05/16/2002DE10052680A1 Verfahren zum Einstellen einer Form einer auf einem Substrat gebildeten Oxidschicht A method of controlling a molding of an oxide layer formed on a substrate
05/16/2002DE10052411A1 Process for heat treating a silicon wafer used in the production of semiconductor circuits comprises forming a silicon wafer having a specified oxygen concentration
05/16/2002DE10050561A1 Integrierte Schaltung mit Schaltungsteilen mit unterschiedlicher Versorgungsspannung Integrated circuit to circuit elements with different supply voltages
05/16/2002DE10050365A1 MRAM-Anordnung MRAM array
05/16/2002DE10041378C1 MRAM-Anordnung MRAM array
05/16/2002DE10030144A1 Halbleitervorrichtung und zugehörige Einbaustruktur Semiconductor device and associated mounting structure
05/16/2002CA2428118A1 A process and an apparatus for the formation of patterns in films using temperature gradients
05/15/2002EP1205981A2 SiC MISFET
05/15/2002EP1205980A1 A method for forming a field effect transistor in a semiconductor substrate
05/15/2002EP1205978A2 Semiconductor memory device, method of manufacturing the same and method of driving the same
05/15/2002EP1205977A2 Memory device with central connecting area
05/15/2002EP1205976A2 Semiconductor capacitor device
05/15/2002EP1205974A2 I/O cell placement method and semiconductor device
05/15/2002EP1205971A2 Electronic component and method and structure for mounting semiconductor device
05/15/2002EP1205970A2 Flip chip assembly structure for semiconductor device and method of assembling therefor
05/15/2002EP1205969A2 Method of manufacturing a MOS field effect transistor with a recombination zone
05/15/2002EP1205968A2 Process for reclaiming Si wafers
05/15/2002EP1205967A2 Method for water vapour enhanced ion-beam machining
05/15/2002EP1205966A2 Method for improving the uniformity and reducing the roughness of a silicon surface before dielectric layer formation
05/15/2002EP1205965A1 Abrasive compound for cmp, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for cmp abrasive compound
05/15/2002EP1205964A1 Plasma process device, electrode structure thereof, and stage structure
05/15/2002EP1205938A2 Integrated circuit with test mode and method for testing a plurality of such circuits
05/15/2002EP1205807A1 Exposure apparatus and exposure method
05/15/2002EP1205806A1 Method for exposing a semiconductor wafer
05/15/2002EP1205784A2 Multiple quantum well light modulator
05/15/2002EP1205584A1 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
05/15/2002EP1205576A1 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device
05/15/2002EP1205575A1 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device