H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2002
10/24/2002	US20020155722 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
10/24/2002	US20020155721 Method of forming shallow trench isolation structure
10/24/2002	US20020155719 Semiconductor device and manufacturing method thereof
10/24/2002	US20020155717 Flat profile; variations in etching rate
10/24/2002	US20020155716 Multilayer dielectrics overcoating semiconductor; wet etching, then dry etching
10/24/2002	US20020155715 Gas assisted method for applying resist stripper and gas-resist stripper combinations
10/24/2002	US20020155714 Antireflectivity coating; using oxygen, chlorine, hydrogen bromide gas mixtures
10/24/2002	US20020155713 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155712 Method of fabricating group-III nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
10/24/2002	US20020155709 Method and apparatus of processing surface of substrate
10/24/2002	US20020155708 Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean
10/24/2002	US20020155707 Overcoating substrate with frozen and liquid mixture; polishing, cleaning
10/24/2002	US20020155706 Uniform grains of active semiconductor material; heating, crystallization; controlling crystal molecular orientation
10/24/2002	US20020155705 Process control; dividing wafer; uniformity load
10/24/2002	US20020155704 Method of forming a semiconductor device with an multilayer WSix film with small grain size
10/24/2002	US20020155703 Novel method to form C54 TiSi2 for IC device fabrication
10/24/2002	US20020155702 Manufacturing method of semiconductor device
10/24/2002	US20020155701 Fabrication method of implanting siliconions into the silicon substrate
10/24/2002	US20020155700 Method of forming a damascene structure
10/24/2002	US20020155699 Semiconductor device and method of fabricating the same
10/24/2002	US20020155698 Isolation using an antireflective coating
10/24/2002	US20020155697 Silicide pattern structures and methods of fabricating the same
10/24/2002	US20020155696 Silicide pattern structures and methods of fabricating the same
10/24/2002	US20020155695 Dual damascene process using an oxide liner for a dielectric barrier layer
10/24/2002	US20020155694 Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer
10/24/2002	US20020155693 Semiconductor substrate overcoated with metal; composite stack; separated by dielectric barrier; antireflective layer; polishing
10/24/2002	US20020155691 Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment
10/24/2002	US20020155690 Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby
10/24/2002	US20020155689 Hafnium oxide dielectric barrier; thermal evaporation of hafnium, then oxidation; uniform thickness
10/24/2002	US20020155688 Highly reliable gate oxide and method of fabrication
10/24/2002	US20020155687 Method of forming a self-aligned contact pad for use in a semiconductor device
10/24/2002	US20020155686 Fabrication method for suppressing a hot carrier effect and leakage currents of I/O devices
10/24/2002	US20020155684 Vapor deposition; amorphous and crystal structure zones
10/24/2002	US20020155683 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155682 Method for fabricating a III nitride film
10/24/2002	US20020155681 Using aqueous ozone solution; surface treatment
10/24/2002	US20020155680 Method for reducing plasma damage to a gate oxide of a metal-oxide semiconductor wafer
10/24/2002	US20020155679 Method for forming an soi substrate by use of plasma ion irradiation
10/24/2002	US20020155677 Electronic device with interleaved portions for use in integrated circuits
10/24/2002	US20020155676 Multilayer; metal substrate, dielectric, contactors; etching channels
10/24/2002	US20020155675 Method for fabricating a capacitor configuration
10/24/2002	US20020155674 Method for preventing boron penentration of a MOS transistor
10/24/2002	US20020155673 Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition
10/24/2002	US20020155670 Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
10/24/2002	US20020155669 High temperature drop-off of a substrate
10/24/2002	US20020155668 Method of reducing leakage current in a MOS transistor
10/24/2002	US20020155667 Ferroelectric memory and electronic apparatus
10/24/2002	US20020155666 Ferroelectric memory and electronic apparatus
10/24/2002	US20020155665 Formation of notched gate using a multi-layer stack
10/24/2002	US20020155664 Floating barrier electrodes; isolation dielectrics; contact holes
10/24/2002	US20020155663 Method of making a semiconductor device with capacitor element
10/24/2002	US20020155662 Multilayer connecting conductor in edge circuit zones
10/24/2002	US20020155661 Multilayer; semiconductor substrate, patterned photoreisits, exposure metal contactors, dielectrics; contacting with electroconductive solution
10/24/2002	US20020155660 Method for producing a microelectronic structure
10/24/2002	US20020155659 Vertical ferroelectric capacitor
10/24/2002	US20020155658 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
10/24/2002	US20020155657 Semiconductor integrated circuit and method for manufacturing the same
10/24/2002	US20020155656 Connecting contactor apertures; adjustment tolerance patterns; overcoating substrate with dielectrics; phase shifting
10/24/2002	US20020155655 Electromagnetic interference; forming channel; filling with electroconductive material; coupling to guard ring
10/24/2002	US20020155654 Vertical gate top engineering for improved GC and CB process windows
10/24/2002	US20020155653 Semiconductor device and method of manufacturing the semiconductor device
10/24/2002	US20020155652 Method of manufacturing semiconductor device
10/24/2002	US20020155651 Method of manufacturing a semiconductor device with metallization layers interconnected by tungsten plugs
10/24/2002	US20020155650 Reducing defects by polishing with aqueous solvents
10/24/2002	US20020155649 Method for fabricating a nitride film
10/24/2002	US20020155648 Edge and bevel cleaning process and system
10/24/2002	US20020155647 Method of manufacturing semiconductor devices with use of wafer carrier having conditioning units
10/24/2002	US20020155646 Soi ldmos structure with improved switching characteristics
10/24/2002	US20020155645 Deposition of conductive material over a semiconductor structure that contains soi devices to reduce to reduce charge buid-up in the soi devices during subsequent focused ion beam processing steps
10/24/2002	US20020155644 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
10/24/2002	US20020155642 Semiconductor die package including carrier with mask
10/24/2002	US20020155641 Substrate plate; adjustment block; light source; optical detectors
10/24/2002	US20020155639 Preferential etching of semiconductor structure using gaseous mixture of nirogen and hydrogen
10/24/2002	US20020155638 Method for fabricating semiconductor device
10/24/2002	US20020155637 Flip chip interconnected structure and a fabrication method thereof
10/24/2002	US20020155635 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
10/24/2002	US20020155630 Cutting thin film of silicon wafer; cleaning; heat treatment; detecting defects using scanning optical microscopes
10/24/2002	US20020155629 Semiconductor processing module with integrated feedback/feed forward metrology
10/24/2002	US20020155628 Method for test optimization using historical and actual fabrication test data
10/24/2002	US20020155627 Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
10/24/2002	US20020155626 Method for fabricating ferroelectric capacitor of semiconductor device
10/24/2002	US20020155586 Apparatus for monitoring eukaryotic and prokaryotic cell activity
10/24/2002	US20020155395 Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
10/24/2002	US20020155392 Edge rinse apparatus and edge rinse method
10/24/2002	US20020155391 Coating a photosensitive photoresist; exposure to light source; development
10/24/2002	US20020155389 Inverse resist coating process
10/24/2002	US20020155388 Overcoating substrate with oxide; doping; heat treatment
10/24/2002	US20020155386 Fluorine-containing layers for damascene structures
10/24/2002	US20020155385 Controlling transmission light
10/24/2002	US20020155384 System for flushing at least one internal space of an objective
10/24/2002	US20020155380 Forming relief images; transferring image
10/24/2002	US20020155379 Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group
10/24/2002	US20020155364 Controlling Pressure; heat stability; semiconductors, integrated circuits
10/24/2002	US20020155361 Having patterned light shielding film; calibrating variations; plasma etching
10/24/2002	US20020155360 Water solution containing ozone
10/24/2002	US20020155357 Prioritizing the application of resolution enhancement techniques
10/24/2002	US20020155356 Mask for measuring optical aberration and method of measuring optical aberration
10/24/2002	US20020155286 Adhesive composition and adhesive sheet for semiconductor devices
10/24/2002	US20020155273 Polyvinyl acetal composition skinless roller brush
10/24/2002	US20020155264 Monolithic ceramic sunstrate, manufacturing and designing methods therefor, and electronic device

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