Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2002
10/22/2002US6469571 Charge pump with charge equalization for improved efficiency
10/22/2002US6469568 Metal oxide semiconductor transistor circuit and semiconductor integrated circuit using the same
10/22/2002US6469535 Based on the resulting variation in current (flowing between an electrode forming a schottky barrier and a semiconductor) with the voltage applied, the surface state of the semiconductor substrate is evaluated
10/22/2002US6469528 Electro-optic sampling probe and measuring method using the same
10/22/2002US6469518 Method and apparatus for determining measurement frequency based on hardware age and usage
10/22/2002US6469448 Inductively coupled RF plasma source
10/22/2002US6469438 Organic electroluminescence device with prescribed optical path length
10/22/2002US6469400 Semiconductor memory device
10/22/2002US6469397 Resin encapsulated electrode structure of a semiconductor device, mounted semiconductor devices, and semiconductor wafer including multiple electrode structures
10/22/2002US6469395 Semiconductor device
10/22/2002US6469394 Conductive interconnect structures and methods for forming conductive interconnect structures
10/22/2002US6469391 Semiconductor device having silicon oxide sidewalls
10/22/2002US6469390 Device comprising thermally stable, low dielectric constant material
10/22/2002US6469389 Contact plug
10/22/2002US6469388 Structure for contact formation using a silicon-germanium alloy
10/22/2002US6469387 Semiconductor device formed by calcium doping a copper surface using a chemical solution
10/22/2002US6469385 Integrated circuit with dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layers
10/22/2002US6469384 Unmolded package for a semiconductor device
10/22/2002US6469382 Semiconductor device substrate and method of manufacturing semiconductor device
10/22/2002US6469380 Resin sealed semiconductor device utilizing a clad material heat sink
10/22/2002US6469377 Semiconductor device
10/22/2002US6469376 Die support structure
10/22/2002US6469373 Semiconductor apparatus with improved thermal and mechanical characteristic under-fill layer and manufacturing method therefor
10/22/2002US6469372 For holding, transporting and baking integrated circuits; carrier tape with array of recesses; cover tape of the same polymer and having the same thermal properties as said carrier tape; and an adhesive joining the tapes
10/22/2002US6469371 Non-contact type IC card and process for manufacturing same
10/22/2002US6469370 Semiconductor device and method of production of the semiconductor device
10/22/2002US6469369 Leadframe having a mold inflow groove and method for making
10/22/2002US6469368 Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method
10/22/2002US6469367 Bipolar transistor
10/22/2002US6469366 Bipolar transistor with collector diffusion layer formed deep in the substrate
10/22/2002US6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component
10/22/2002US6469362 High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
10/22/2002US6469361 Semiconductor wafer
10/22/2002US6469360 Integrated circuit devices providing reduced electric fields during fabrication thereof
10/22/2002US6469359 Semiconductor device and a method for production thereof
10/22/2002US6469357 Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
10/22/2002US6469356 Semiconductor memory device having different distances between gate electrode layers
10/22/2002US6469355 Configuration for voltage buffering in a dynamic memory using CMOS technology
10/22/2002US6469354 Semiconductor device having a protective circuit
10/22/2002US6469351 Electrostatic breakdown prevention circuit for semiconductor device
10/22/2002US6469350 Active well schemes for SOI technology
10/22/2002US6469349 The gate, source, and drain electrodes of the mos transistor are formed in the trenches in the semiconductor substrate, and the transistor is surrounded by a thick sio2 film, so that a transistor of stable characteristics is obtained.
10/22/2002US6469348 Nonvolatile semiconductor memory device
10/22/2002US6469347 Buried-channel semiconductor device, and manufacturing method thereof
10/22/2002US6469345 Semiconductor device and method for manufacturing the same
10/22/2002US6469343 Multi-level type nonvolatile semiconductor memory device
10/22/2002US6469342 Silicon nitride read only memory that prevents antenna effect
10/22/2002US6469341 Floating gate overlying a dielectric layer over an active region, that a side wall that has a slant edge defining a generally concave-shaped undercut edge, and vertical edges above said slant edge.
10/22/2002US6469340 Flash memory device with an inverted tapered floating gate
10/22/2002US6469339 A void within an opening filled with bpteos film suppresses occurrence of crystal defects in the silicon substrate, and the semiconductor device ensuring high reliability and high yield is obtained.
10/22/2002US6469338 Non-volatile semiconductor memory device and manufacturing method thereof
10/22/2002US6469337 Semiconductor memory device and manufacturing method and mask data preparing method for the same
10/22/2002US6469336 Structure for reducing contact aspect ratios
10/22/2002US6469335 Semiconductor memory having a memory cell array
10/22/2002US6469334 Ferroelectric field effect transistor
10/22/2002US6469333 Semiconductor device having a ferroelectric film and a fabrication process thereof
10/22/2002US6469330 Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
10/22/2002US6469328 Semiconductor memory device
10/22/2002US6469327 Semiconductor device with efficiently arranged pads
10/22/2002US6469326 Radio frequency modules and modules for moving target detection
10/22/2002US6469323 Light-emitting gallium nitride-based compound semiconductor device
10/22/2002US6469320 Semiconductor light emitting device
10/22/2002US6469319 Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same
10/22/2002US6469318 Semiconductor device having thin film transistor for supplying current to driven element
10/22/2002US6469317 Semiconductor device and method of fabricating the same
10/22/2002US6469315 Semiconductor device and method of manufacturing the same
10/22/2002US6469313 Semiconductor optical device and method for fabricating the same
10/22/2002US6469310 Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus
10/22/2002US6469284 Lamp annealer and method for controlling processing temperature thereof
10/22/2002US6469283 Method and apparatus for reducing thermal gradients within a substrate support
10/22/2002US6469260 Wiring boards, semiconductor devices and their production processes
10/22/2002US6469189 Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it
10/22/2002US6469086 Plastic molding compound, composite body, and filler for a plastic molding compound
10/22/2002US6468951 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
10/22/2002US6468927 Method of depositing a nitrogen-doped FSG layer
10/22/2002US6468926 Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride
10/22/2002US6468925 Plasma enhanced chemical vapor deposition process
10/22/2002US6468924 Methods of forming thin films by atomic layer deposition
10/22/2002US6468923 Method of producing semiconductor member
10/22/2002US6468922 Method for manufacturing a semiconductor device with a dual interlayer insulator film of borophosphosilicate glass to prevent diffusion of phosphorus
10/22/2002US6468921 Thin-film forming method
10/22/2002US6468920 Forming photoresist pattern; etching
10/22/2002US6468919 Method of making a local interconnect in an embedded memory
10/22/2002US6468918 In situ photoresist hot bake in loading chamber of dry etch
10/22/2002US6468917 Method for modifying a C4 semiconductor device
10/22/2002US6468915 Method of silicon oxynitride ARC removal after gate etching
10/22/2002US6468914 Method of forming gate electrode in semiconductor device
10/22/2002US6468913 Ready-to-use stable chemical-mechanical polishing slurries
10/22/2002US6468912 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
10/22/2002US6468911 Method of chemical/mechanical polishing of the surface of semiconductor device
10/22/2002US6468909 Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
10/22/2002US6468908 Al-Cu alloy sputtering method with post-metal quench
10/22/2002US6468907 Forming a chemical enhancer layer at the contact hole and the bottom of the trench and then selectively forming copper, using metal organic chemical vapor deposition (mocvd); high quality thin copper film; dual damacene
10/22/2002US6468906 Passivation of copper interconnect surfaces with a passivating metal layer
10/22/2002US6468905 Methods of restricting silicon migration
10/22/2002US6468904 RPO process for selective CoSix formation
10/22/2002US6468902 Semiconductor device and its manufacturing method
10/22/2002US6468901 Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same
10/22/2002US6468900 Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface
10/22/2002US6468899 Contactless local interconnect process utilizing self-aligned silicide
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