Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2002
10/22/2002US6468898 Method of manufacturing semiconductor device
10/22/2002US6468897 Method of forming damascene structure
10/22/2002US6468896 Method of fabricating semiconductor components
10/22/2002US6468895 Pattern forming method
10/22/2002US6468894 Metal interconnection structure with dummy vias
10/22/2002US6468893 Method of forming solder bumps
10/22/2002US6468892 Front side coating for bump devices
10/22/2002US6468891 Stereolithographically fabricated conductive elements, semiconductor device components and assemblies including such conductive elements, and methods
10/22/2002US6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device
10/22/2002US6468889 Backside contact for integrated circuit and method of forming same
10/22/2002US6468888 Method for forming polysilicon-germanium gate in CMOS transistor and device made thereby
10/22/2002US6468887 Semiconductor device and a method of manufacturing the same
10/22/2002US6468886 Reacting silicon with iodine forming silicon iodide; purify by distillation to removal impurities
10/22/2002US6468885 Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates
10/22/2002US6468884 Method of forming silicon-contained crystal thin film
10/22/2002US6468883 Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections
10/22/2002US6468882 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
10/22/2002US6468881 Method for producing a single crystal silicon
10/22/2002US6468880 Method for fabricating complementary silicon on insulator devices using wafer bonding
10/22/2002US6468879 Method and device for separating a plate of material, in particular semiconductor material, into two wafers
10/22/2002US6468878 SOI LDMOS structure with improved switching characteristics
10/22/2002US6468877 Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner
10/22/2002US6468876 Simple stack cell capacitor formation
10/22/2002US6468875 Fabrication method of capacitor for integrated circuit
10/22/2002US6468874 Method of manufacturing a capacitor in a semiconductor device
10/22/2002US6468873 MIM formation method on CU damscene
10/22/2002US6468872 Method of fabricating a thin film transistor
10/22/2002US6468871 Method of forming bipolar transistor salicided emitter using selective laser annealing
10/22/2002US6468870 Method of fabricating a LDMOS transistor
10/22/2002US6468869 Method of fabricating mask read only memory
10/22/2002US6468868 Method of forming high density multi-state mask ROM cells
10/22/2002US6468867 Nitride mask layer, silicide is formed on the gate and not in the diffusion region, which are in the cell array region; semiconductor device with lower resistance and decrease in the leakage defects
10/22/2002US6468866 Single feature size MOS technology power device
10/22/2002US6468865 Method of simultaneous formation of bitline isolation and periphery oxide
10/22/2002US6468864 Method of fabricating silicon nitride read only memory
10/22/2002US6468863 Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof
10/22/2002US6468862 High capacitive-coupling ratio of stacked-gate flash memory having high mechanical strength floating gate
10/22/2002US6468861 Method for manufacturing non-volatile semiconductor memory
10/22/2002US6468860 Integrated circuit capable of operating at two different power supply voltages
10/22/2002US6468859 Method of reducing electrical shorts from the bit line to the cell plate
10/22/2002US6468858 Method of forming a metal insulator metal capacitor structure
10/22/2002US6468857 Method for forming a semiconductor device having a plurality of circuits parts
10/22/2002US6468856 High charge storage density integrated circuit capacitor
10/22/2002US6468855 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same
10/22/2002US6468854 Device and method for protecting against oxidation of a conductive layer in said device
10/22/2002US6468853 Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner
10/22/2002US6468852 Methods of forming field effect transistors; methods of forming DRAM circuitry
10/22/2002US6468851 Method of fabricating CMOS device with dual gate electrode
10/22/2002US6468850 Method of manufacturing a semiconductor memory device
10/22/2002US6468849 Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology
10/22/2002US6468848 Method of fabricating electrically isolated double gated transistor
10/22/2002US6468847 Method of fabricating a high-voltage transistor
10/22/2002US6468845 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
10/22/2002US6468844 Preparation method of semiconductor device
10/22/2002US6468843 Barrier overlapping impurities doped zones
10/22/2002US6468841 Process for producing crystalline silicon thin film
10/22/2002US6468840 Active matrix substrate and manufacturing method thereof
10/22/2002US6468839 Thin film semiconductor device for display and method of producing same
10/22/2002US6468838 Method for fabricating a MOS transistor of an embedded memory
10/22/2002US6468832 Method to encapsulate bumped integrated circuit to create chip scale package
10/22/2002US6468831 Method of fabricating thin integrated circuit units
10/22/2002US6468830 Compliant semiconductor package with anisotropic conductive material interconnects and methods therefor
10/22/2002US6468829 Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
10/22/2002US6468826 Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same
10/22/2002US6468825 Method for producing semiconductor temperature sensor
10/22/2002US6468824 Method for forming a semiconductor device having a metallic substrate
10/22/2002US6468822 Method for manufacturing electro-optic element
10/22/2002US6468818 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage
10/22/2002US6468817 Forming dielectrics; polishing; etching with hydrofluoric acid
10/22/2002US6468816 Method for sensing conditions within a substrate processing system
10/22/2002US6468815 Overlay radius offset shift engine
10/22/2002US6468814 Detection of nontransient processing anomalies in vacuum manufacturing process
10/22/2002US6468813 Method of automatically identifying and skipping defective work pieces for wire-bonding operation
10/22/2002US6468812 Method for producing a semiconductor memory device with a multiplicity of memory cells
10/22/2002US6468742 Detecting the hybridization of the reporter oligonucleotide to the target nucleic acid
10/22/2002US6468715 Thermal mass transfer donor element
10/22/2002US6468714 Negative radiation-sensitive resin composition
10/22/2002US6468712 Photolithography at very short ultraviolet wavelengths employing a photo-acid generator and an aliphatic polymer that includes one or more protected hydroxyl groups; fluoride excimer lasers; enhanced resolution
10/22/2002US6468701 Stencil mask and method of forming the same
10/22/2002US6468700 Minimal tensile stress; silicon doped with boron; annealed in nitrogen
10/22/2002US6468663 Semiconductor substrate and process for producing the same
10/22/2002US6468640 Monolithic ceramic substrate, manufacturing and designing methods therefor, and electronic device
10/22/2002US6468638 Electrically coupling an electrical interconnect layer on a flexible layer to blocks of a substrate; forming displays such as flat panel displays
10/22/2002US6468603 Interlayer dielectric film of a semiconductor; filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput
10/22/2002US6468601 Ammonium silicon hexafluoride white powder byproduct from reaction of silane and ammonia and nf3 nitrogen fluoride; flowing plasma cleaning gas into process chamber to react with said white powder
10/22/2002US6468586 Environment exchange control for material on a wafer surface
10/22/2002US6468448 Ph adjusting agent passivation to prevent dissolution of conductive particles; improving reliability of circuit boards
10/22/2002US6468439 Etching of metallic composite articles
10/22/2002US6468413 Electrochemical etch for high tin solder bumps
10/22/2002US6468386 Gas delivery system
10/22/2002US6468384 Predictive wafer temperature control system and method
10/22/2002US6468366 Aluminum alloy or composite with such as magnesium wherein the concentration of aluminum is higher at surface nitrided portion; corrosion resistance; wiring for semiconductors and liquid crystal panels
10/22/2002US6468362 Applying and maintaining layer of surfactant such as a polyoxyalkylene alkyl or alkylphenyl ether on surface during cleaning
10/22/2002US6468357 Remover for a ruthenium containing metal and use thereof
10/22/2002US6468356 Method for removing molding residues in the fabrication of plastic packages for semiconductor devices
10/22/2002US6468354 Semiconductor wafer support
10/22/2002US6468353 Method and apparatus for improved substrate handling
10/22/2002US6468351 Vacuum processing apparatus with improved maintainability
10/22/2002US6468348 Method of producing an open form
10/22/2002US6468347 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
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