| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 10/29/2002 | US6472285 Method for fabricating high-Q inductance device in monolithic technology |
| 10/29/2002 | US6472284 Method for fabricating a MOSFET having a thick and thin pad oxide at the gate sides |
| 10/29/2002 | US6472283 MOS transistor processing utilizing UV-nitride removable spacer and HF etch |
| 10/29/2002 | US6472282 Self-amorphized regions for transistors |
| 10/29/2002 | US6472281 Method for fabricating semiconductor device using a CVD insulator film |
| 10/29/2002 | US6472280 Method for forming a spacer for semiconductor manufacture |
| 10/29/2002 | US6472279 Method of manufacturing a channel stop implant in a semiconductor device |
| 10/29/2002 | US6472278 Method and apparatus for creating a voltage threshold in a FET |
| 10/29/2002 | US6472277 Method for fabricating a semiconductor device with an improved short channel effect |
| 10/29/2002 | US6472276 Using silicate layers for composite semiconductor |
| 10/29/2002 | US6472275 Read-only memory and method for fabricating the same |
| 10/29/2002 | US6472274 MOSFET with self-aligned channel edge implant and method |
| 10/29/2002 | US6472273 Method of manufacturing a flash memory device |
| 10/29/2002 | US6472271 Planarization method of memory unit of flash memory |
| 10/29/2002 | US6472270 Elimination of voids at the oxide/silicon interface in trench-based structures |
| 10/29/2002 | US6472269 Method for forming capacitor |
| 10/29/2002 | US6472268 Method for forming storage node contact |
| 10/29/2002 | US6472267 DRAM cell having storage capacitor contact self-aligned to bit lines and word lines |
| 10/29/2002 | US6472266 Method to reduce bit line capacitance in cub drams |
| 10/29/2002 | US6472265 Method for manufacturing embedded dynamic random access memory |
| 10/29/2002 | US6472264 Device and method for protecting against oxidation of a conductive layer in said device |
| 10/29/2002 | US6472262 Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor |
| 10/29/2002 | US6472261 Method of forming an integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure |
| 10/29/2002 | US6472260 Methods of forming field effect transistors and related field effect transistor constructions |
| 10/29/2002 | US6472259 Method of manufacturing semiconductor device |
| 10/29/2002 | US6472258 Double gate trench transistor |
| 10/29/2002 | US6472257 High quality factor, integrated inductor and production method thereof |
| 10/29/2002 | US6472256 Method of manufacturing a thin-film transistor with a short-circuiting pattern |
| 10/29/2002 | US6472255 Solid-state imaging device and method of its production |
| 10/29/2002 | US6472254 Integrated photovoltaic switch with integrated power device including etching backside of substrate |
| 10/29/2002 | US6472253 Programmable semiconductor device structures and methods for making the same |
| 10/29/2002 | US6472252 Methods for ball grid array (BGA) encapsulation mold |
| 10/29/2002 | US6472251 Method for integrated circuit packaging |
| 10/29/2002 | US6472249 Semiconductor device having sealing film formed on the surface having columnar electrode formed thereon and method of manufacturing the same |
| 10/29/2002 | US6472248 Microcrystalline series photovoltaic element and process for fabrication of same |
| 10/29/2002 | US6472247 Solid-state imaging device and method of production of the same |
| 10/29/2002 | US6472244 Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material |
| 10/29/2002 | US6472243 Method of forming an integrated CMOS capacitive pressure sensor |
| 10/29/2002 | US6472241 Radical cell device and method for manufacturing groups II-VI compound semiconductor device |
| 10/29/2002 | US6472240 Methods of semiconductor processing |
| 10/29/2002 | US6472239 Method for fabricating semiconductor components |
| 10/29/2002 | US6472238 Evaluation of etching processes in semiconductors |
| 10/29/2002 | US6472237 Method and system for determining a thickness of a layer |
| 10/29/2002 | US6472236 Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack |
| 10/29/2002 | US6472234 Failure analysis method for chip of ball grid array type semiconductor device |
| 10/29/2002 | US6472231 Dielectric layer with treated top surface forming an etch stop layer and method of making the same |
| 10/29/2002 | US6472229 Method for manufacturing a ferroelectric capacitor having improved polarization characteristics and a method for manufacturing a ferroelectric memory device incorporating such capacitor |
| 10/29/2002 | US6472127 Method of forming a photoresist pattern |
| 10/29/2002 | US6472124 Self-aligned metal-insulator-metal capacitor for integrated circuits |
| 10/29/2002 | US6472122 Very thin layer of alumina, zerconia, or other ceramic, less than 25 microns thick, |
| 10/29/2002 | US6472120 Photosensitive polymer and chemically amplified photoresist composition containing the same |
| 10/29/2002 | US6472112 Method for measuring reticle leveling in stepper |
| 10/29/2002 | US6472109 Providing two different dopants within a periphery of the opening, the dopants each being provided to a concentration of at least about 1017 atoms/cm3 |
| 10/29/2002 | US6472079 Product of hydrolysis and condensation of an organosilicon compound; 1a or 2a compound, especially carboxylic salt; solvent; excellent cracking resistance after a pct (pressure cooker test). |
| 10/29/2002 | US6472076 Semiconductor dielectric thin films |
| 10/29/2002 | US6472065 For supporting a silicon wafer; adhesive becomes progressively detackified during exposure to ultraviolet radiation; multi-functional urethane acrylate oligomer combined with (meth)acrylate copolymer |
| 10/29/2002 | US6472040 Semi-pure and pure monocrystalline silicon ingots and wafers |
| 10/29/2002 | US6472023 Seed layer of copper interconnection via displacement |
| 10/29/2002 | US6471913 Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
| 10/29/2002 | US6471847 Plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films) using a liquid conductor such as mercury |
| 10/29/2002 | US6471836 Sputtering apparatus |
| 10/29/2002 | US6471833 High etch rate method for plasma etching silicon nitride |
| 10/29/2002 | US6471821 Plasma reactor and method |
| 10/29/2002 | US6471806 Method of adhering a wafer to wafer tape |
| 10/29/2002 | US6471783 Using carbonated water to reduce generation of static electricity and oxidation caused by water contacting metal thin film conductors during such as washing, cutting, polishing, surface treatment |
| 10/29/2002 | US6471782 Precursor deposition using ultrasonic nebulizer |
| 10/29/2002 | US6471781 Method of depositing titanium nitride thin film and CVD deposition apparatus |
| 10/29/2002 | US6471780 Process for fabricating films of uniform properties on semiconductor devices |
| 10/29/2002 | US6471779 Gas feed ceramic structure for semiconductor-producing apparatus |
| 10/29/2002 | US6471772 Laser processing apparatus and laser processing method |
| 10/29/2002 | US6471771 In-situ post epitaxial treatment process |
| 10/29/2002 | US6471770 Method of manufacturing semiconductor substrate |
| 10/29/2002 | US6471769 Using a group iii element and ammonia for nitriding in presence of hydrogen as carrier gas, improved crystallinity by controlling a flow rate ratio between starting material gas and carrier gas |
| 10/29/2002 | US6471735 Slurry of abrasive particles, suspension medium, peroxygen compound, etching agent and an alkyl ammonium hydroxide; increased silicon oxide to silicon nitride polish rate selectivity |
| 10/29/2002 | US6471538 Contact structure and production method thereof and probe contact assembly using same |
| 10/29/2002 | US6471501 Mold for fabricating semiconductor devices |
| 10/29/2002 | US6471464 Wafer positioning device |
| 10/29/2002 | US6471462 Carrier handling apparatus of an IC module handler |
| 10/29/2002 | US6471460 Apparatus for processing a microelectronic workpiece including a workpiece cassette inventory assembly |
| 10/29/2002 | US6471459 Substrate transfer shuttle having a magnetic drive |
| 10/29/2002 | US6471435 Flexural joint |
| 10/29/2002 | US6471422 Substrate processing apparatus and substrate processing method |
| 10/29/2002 | US6471421 Supply ports become gradually smaller toward a center portion of the substrate to prevent heaping of solution at the center and promote evenness of the developing solution within the substrate surface; photolithographic semiconductor production |
| 10/29/2002 | US6471327 Apparatus and method of delivering a focused beam of a thermodynamically stable/metastable mixture of a functional material in a dense fluid onto a receiver |
| 10/29/2002 | US6471115 Process for manufacturing electronic circuit devices |
| 10/29/2002 | US6471110 Method and apparatus for mounting semiconductor chips |
| 10/29/2002 | US6471037 Semiconductor manufacturing apparatus and method |
| 10/29/2002 | US6471010 Material delivery system for clean room-like environments |
| 10/29/2002 | US6470946 Wafer demount gas distribution tool |
| 10/29/2002 | US6470927 Foup opener |
| 10/29/2002 | US6470824 Semiconductor manufacturing apparatus |
| 10/29/2002 | US6470823 Apparatus and method for forming a deposited film by a means of plasma CVD |
| 10/29/2002 | US6470596 Vacuum processing apparatus and operating method therefor |
| 10/29/2002 | CA2238827C Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
| 10/28/2002 | EP1137675A4 Preparation of partially cross-linked polymers and their use in pattern formation |
| 10/28/2002 | EP1131849A4 Pseudomorphic high electron mobility transistors |
| 10/24/2002 | WO2002085080A1 Method and device for generating extreme ultraviolet radiation in particular for lithography |
| 10/24/2002 | WO2002084755A2 Keepers for mram electrodes |
| 10/24/2002 | WO2002084748A2 Method for producing optically transparent regions in a silicon substrate |
| 10/24/2002 | WO2002084745A2 Power semiconductor devices and methods of forming same |