Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2002
10/24/2002US20020153552 Semiconductor device and method for manufacturing the smae
10/24/2002US20020153551 Method for making a metal-insulator-metal capacitor using plate-through mask techniques
10/24/2002US20020153550 FRAM and method of fabricating the same
10/24/2002US20020153549 Tailored insulator properties for devices
10/24/2002US20020153548 Semiconductor device and method of manufacturing the same
10/24/2002US20020153547 Semiconductor memory device including magneto resistive element and method of fabricating the same
10/24/2002US20020153546 Two-transistor flash cell
10/24/2002US20020153545 Semiconductor memory device
10/24/2002US20020153544 Semiconductor device and its manufacturing method
10/24/2002US20020153543 Method for manufacturing oxide ferroelectric thin film oxide ferroelectric thin film and oxide ferroelectric thin film element
10/24/2002US20020153542 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
10/24/2002US20020153541 Cluster globular semiconductor device
10/24/2002US20020153539 Semiconductor integrated circuit device and method of manufacturing the same
10/24/2002US20020153537 Semiconductor device and method for fabricating the same
10/24/2002US20020153536 Semiconductor device
10/24/2002US20020153535 Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors
10/24/2002US20020153534 Semiconductor device and power amplifier using the same
10/24/2002US20020153533 Semiconductor device
10/24/2002US20020153527 Polysilicon thin film transistor structure
10/24/2002US20020153526 Packaging bag for semiconductor wafer and method of packaging semiconductor wafer using the packaging bag
10/24/2002US20020153525 Semiconductor device with process monitor circuit and test method thereof
10/24/2002US20020153524 Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks
10/24/2002US20020153496 Control of exposure in charged-particle-beam microlithography based on beam-transmissivity of the reticle
10/24/2002US20020153494 Apparatus and methods for reducing coulombic blur in charged-particle-beam microlithography
10/24/2002US20020153492 Component of a radiation detector, radiation detector and radiation detection apparatus
10/24/2002US20020153477 Work piece feeding machine and abrasive system
10/24/2002US20020153427 Spraying method of a dispense system
10/24/2002US20020153403 Tape shifting means
10/24/2002US20020153360 Laser irradiating apparatus and method of manufacturing semiconductor apparatus
10/24/2002US20020153351 Substrate processing method and substrate processing unit
10/24/2002US20020153350 Method for preventing contamination in a plasma process chamber
10/24/2002US20020153349 Plasma processing method and apparatus
10/24/2002US20020153347 Pressure suppression device for chemical mechanical polishing machine and method thereof
10/24/2002US20020153258 Providing integrated circuit device substrate; forming a first patterned photoresist layer over substrate; forming a magnetic material layer or an electrically conductive material layer in pattern; insulating and planarizing photoresist layer
10/24/2002US20020153257 Preparing active part comprising wafer provided with conductive connection pads on one face and the base being provided with conductive pins, electrolytic deposition of conductive metal on the pin; oxidation, nitrizing
10/24/2002US20020153256 Method and apparatus for depositing and controlling the texture of a thin film
10/24/2002US20020153246 Method and apparatus for electropolishing metal interconnections on semiconductor devices
10/24/2002US20020153104 Plasma etching chamber and method for manufacturing photomask using the same
10/24/2002US20020153102 Apparatus for conditioning the atmosphere in a vacuum chamber
10/24/2002US20020153101 Semiconductor processing system and method
10/24/2002US20020153100 Cooling system
10/24/2002US20020153099 Apparatus for increased workpiece throughput
10/24/2002US20020153098 Transferring apparatus and substrate processing apparatus
10/24/2002US20020153097 Electroetching process and system
10/24/2002US20020153071 Methods of fabricating metallic materials
10/24/2002US20020153030 Stripping copper using wet copper stripping chemicals whereby an eluent is produced; continuously analyzing eluent for presence of copper; stopping copper stripping process when presence of copper is no longer detected
10/24/2002US20020153027 For cleaning semiconductor wafers
10/24/2002US20020153026 Method for cleaning substrates
10/24/2002US20020153025 For cleaning substrates having high-definition pattern formed; prevents plashing of the cleaning liquid
10/24/2002US20020153024 Electrostatic chuck cleaning method
10/24/2002US20020152960 Thin-film disposition apparatus
10/24/2002US20020152959 Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same
10/24/2002US20020152958 Substrate processing apparatus
10/24/2002US20020152955 Apparatus and method for depositing an electroless solution
10/24/2002US20020152954 Coating apparatus and coating method
10/24/2002US20020152952 Process for producing an epitaxial layer of gallium nitride
10/24/2002US20020152951 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
10/24/2002US20020152926 Immersing the substrate in a copper plating bath; immersing an activator in copper plating bath; performing a direct contact between activator and substrate to deposit copper on substrate
10/24/2002US20020152858 Process for fabricating heat sink with high-density fins
10/24/2002US20020152808 Self-supporting adaptable metrology device
10/24/2002US20020152798 Sensor micro-machined with electrolytic welding and method for making same
10/24/2002US20020152627 Adjusting apparatus for devices and for setting adjustments
10/24/2002US20020152625 Thickness measuring apparatus and method
10/24/2002US20020152610 Electronic circuit device and method of production of the same
10/24/2002US20020152609 Method and device for coupling PCB sheet
10/24/2002US20020152567 Wafer scrubbing device having brush assembly and mounting assembly forming spherical joint
10/24/2002DE10216017A1 Semiconductor component used e.g. as an integrated circuit of a vehicle comprises a polysilicon resistor, and metal conductors each electrically connected to the resistor at each end via contacts
10/24/2002DE10213523A1 Chemisch verstärkende, positiv arbeitende Restismasse Chemically amplified positive working Restismasse
10/24/2002DE10213464A1 Auf hochohmigen Substraten gebildeten monolithische serielle/parallele LED-Arrays Formed on high-ohmic substrates monolithic serial / parallel LED arrays
10/24/2002DE10211922A1 Mikroskop zur Untersuchung von Halbleiterwafern Microscope for inspecting semiconductor wafers
10/24/2002DE10211342A1 Polishing tool used for polishing semiconductor wafers comprises a support and/or support part and a polishing material made from a felt containing abrasive grains and/or grinding grains
10/24/2002DE10163361A1 Halbleitervorrichtung Semiconductor device
10/24/2002DE10161947A1 Halbleiterelement Semiconductor element
10/24/2002DE10157887A1 Basisverbindungssubstrat, Herstellungsverfahren davon, Halbleiteranordnung und Herstellungsverfahren davon Based compound substrate, manufacturing method thereof, semiconductor device and manufacturing method thereof
10/24/2002DE10155416A1 Halbleiter-Permanentspeicher Semiconductor non-volatile memory
10/24/2002DE10134519A1 Verbessertes Diaphragma für eine chemische mechanische Poliervorrichtung Improved diaphragm for a chemical mechanical polishing apparatus
10/24/2002DE10119992A1 Illumination unit preferably for a microscope, in particular, a UV microscope comprises a reflection filter arrangement whose entry and exit beams are translationally and/or angularly offset relative to one another
10/24/2002DE10119741A1 Production of a process gas used for treating semiconductor substrates comprises burning oxygen in a hydrogen-rich atmosphere in a combustion chamber to form a gas made from water vapor and hydrogen
10/24/2002DE10119702A1 Device for testing the latching force for the latches of clean room transport boxes
10/24/2002DE10119463A1 Production of a chalcogenide halide of the ABC2 type comprises arranging metallic precursor layers, chalcogenizing with simultaneous optical process control, irradiating with light, and surface chalcogenizing to form the ABC2 phase
10/24/2002DE10118422A1 Production of a structured metal-containing layer on a semiconductor wafer comprises applying a metal-containing layer and a mask layer on substrate, structuring, depositing protective layer, and polishing
10/24/2002DE10118402A1 Contact chain total resistance measurement method for testing semiconductor chips, involves measuring voltage and current in probe pads to obtain total resistance, by selectively connecting n-type doped layers to substrate
10/24/2002DE10118197A1 Integrated magnetoresistive semiconducting memory arrangement has third conductor plane occupied by write selection lines and spatially and electrically separate from first two read planes
10/24/2002DE10118196A1 Operating MRAM semiconducting memory involves subjecting memory cell to transient reversible magnetic change while reading information, comparing changed/original current signals
10/24/2002DE10118155A1 Removal of solid particles from polished surface coated with dielectric, used in integrated circuit production, uses cleaning with brush and etching with liquid to loosen embedded particles and further cleaning
10/24/2002DE10117880A1 Method of isolating electronic components from composite structure e.g. for removing chips from wafer, involves selectively deactivating adhesive in corresponding region prior to removing component
10/24/2002DE10117802A1 Semiconductor power component e.g. emitter switched thyristor as ignition transistor of ignition coil of combustion engine, has drift zone joined to rear face emitter zone
10/24/2002DE10117801A1 Semiconductor power component e.g. vertical insulated gate bipolar transistor, has n-type and p-type drift regions with specific degree of compensation, that are connected to rear side emitter region
10/24/2002DE10117797A1 Montagevorrichtung und Verfahren zum Aufbau eines elektronischen Bauteils Mounting apparatus and method for setting up an electronic component
10/24/2002DE10115281A1 Verfahren zur Overlayeinstellung zweier Maskenebenen bei einem photolithographischen Prozess zur Herstellung einer integrierten Schaltung Method for setting overlay of two mask layers in a photolithographic process for manufacturing an integrated circuit
10/24/2002DE10114897A1 Elektronisches Bauteil Electronic component
10/24/2002DE10114861A1 Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat Method and apparatus for stripping paint an area on a mask substrate
10/24/2002CA2482258A1 A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
10/24/2002CA2444296A1 High pressure processing chamber for semiconductor substrate including flow enhancing features
10/24/2002CA2442030A1 Layered stacks and methods of production thereof
10/23/2002EP1251719A2 Circuit pattern of resistance heating elements and substrate-treating apparatus incorporating the pattern
10/23/2002EP1251581A1 High frequency integrated inductive coil
10/23/2002EP1251577A2 Fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
10/23/2002EP1251570A2 Method of fabricating magnetic random access memory based on tunnel magnetroresistance effect
10/23/2002EP1251564A2 Non-volatile semiconductor memory device and manufacturing method thereof