Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2003
05/08/2003WO2003039195A2 Induction heating devices and methods for controllably heating an article
05/08/2003WO2003038957A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus
05/08/2003WO2003038921A1 Insulator for an organic electronic component
05/08/2003WO2003038907A1 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
05/08/2003WO2003038904A2 Field effect transistor on insulating layer and manufacturing method
05/08/2003WO2003038900A1 Image displaying method and image displaying device
05/08/2003WO2003038899A2 Semiconductor structure with a coil underneath the first wiring layer or between two wiring layers
05/08/2003WO2003038896A2 Ball grid array with x-ray alignment mark
05/08/2003WO2003038895A1 Wafer scribing method and wafer scribing device
05/08/2003WO2003038893A2 Semiconductor structure and method for the production thereof
05/08/2003WO2003038892A2 Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
05/08/2003WO2003038891A1 Electrostatic wafer holder device
05/08/2003WO2003038890A2 Method for planarization etch with in-situ monitoring by interferometry prior to recess etch
05/08/2003WO2003038889A2 Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring
05/08/2003WO2003038888A2 Method and apparatus for cascade control using integrated metrology
05/08/2003WO2003038887A1 Contact planarization materials that generate no volatile byproducts or residue during curing
05/08/2003WO2003038885A1 Method for making a semiconductor component
05/08/2003WO2003038884A2 A method for bonding a pair of silicon wafers together and a semiconductor wafer
05/08/2003WO2003038883A1 Polishing fluid and polishing method
05/08/2003WO2003038882A1 Method and pad for polishing wafer
05/08/2003WO2003038881A1 Direct bonding of articles containing silicon
05/08/2003WO2003038880A1 Method of forming scribe line on semiconductor wafer, and scribe line forming device
05/08/2003WO2003038879A2 Methods and apparatus for plasma doping and ion implantation in an integrated processing system
05/08/2003WO2003038878A2 Method for fabricating semiconductor structures
05/08/2003WO2003038877A2 Low temperature formation of backside ohmic contacts for vertical devices
05/08/2003WO2003038875A2 Method for photolithographic structuring by means of a carbon hard mask layer which has a diamond-like hardness and is deposited by means of a plasma method
05/08/2003WO2003038873A2 Removing an amorphous oxide from a monocrystalline surface
05/08/2003WO2003038872A2 Method and system for monitoring a semiconductor wafer plasma etch process
05/08/2003WO2003038871A1 Non-contacting deposition control of chalcopyrite thin films
05/08/2003WO2003038870A1 Configurable single substrate wet-dry integrated cluster cleaner
05/08/2003WO2003038869A2 Universal modular wafer transport system
05/08/2003WO2003038868A2 High resistivity silicon carbide single crystal and method of producing it
05/08/2003WO2003038867A1 Method of manufacturing modules with an organic integrated circuit
05/08/2003WO2003038866A2 Method and device for drying semiconductor wafers
05/08/2003WO2003038864A2 Magneto-resistive bit structure and method of manufacturing therefor
05/08/2003WO2003038863A2 Trench dmos device with improved drain contact
05/08/2003WO2003038862A2 Pads for cmp and polishing substrates
05/08/2003WO2003038861A2 A method of stacking layers containing encapsulated integrated circuit chips with one or more overlying interconnect layers
05/08/2003WO2003038858A2 A semiconductor manufacturing apparatus having a built-in inspection apparatus and method therefor
05/08/2003WO2003038529A1 Method for releasing resist
05/08/2003WO2003038528A1 Method for the production of a semiconductor device
05/08/2003WO2003038525A1 Positive photoresist composition for liquid crystal device
05/08/2003WO2003038487A2 Improvements in and relating to optoelectronic devices
05/08/2003WO2003038479A2 Structures and methods for reducing aberration in optical systems
05/08/2003WO2003038459A1 Method and apparatus for accelerated determination of electromigration characteristics of semiconductor wiring
05/08/2003WO2003038386A2 Real-time component monitoring and replenishment system for multicomponent fluids
05/08/2003WO2003038374A1 Method and system for determining a thickness of a layer
05/08/2003WO2003038153A1 Process for low temperature, dry etching, and dry planarization of copper
05/08/2003WO2003038148A1 Plating apparatus and plating method
05/08/2003WO2003037783A1 Method for manufacturing metal microstructure
05/08/2003WO2003037589A1 Sealing material tablet, method of manufacturing the tablet, and electronic component device
05/08/2003WO2003037576A1 Substrate transfer apparatus, and substrate transfer method
05/08/2003WO2003037497A2 Method of etching high aspect ratio features
05/08/2003WO2003017013A3 Experiment management system, method and medium
05/08/2003WO2003014645A3 Improved lamphead for a rapid thermal processing chamber
05/08/2003WO2003007337A3 Low dielectric constant organic dielectrics based on cage-like structures
05/08/2003WO2003007327A3 Shallow-angle interference process and apparatus for determining real-time etching rate
05/08/2003WO2003005430A3 Method and apparatus for controlling a plating process
05/08/2003WO2003003448A3 High temperature electrostatic chuck
05/08/2003WO2003003404A3 Process chamber components having textured internal surfaces and method of manufacture
05/08/2003WO2002084707A3 Method of etching shaped cavities and associated on-chip devices and micro-machined structures
05/08/2003WO2002039485A3 Platen for retaining polishing material
05/08/2003WO2002033733A3 System and method for automated monitoring and assessment of fabrication facility
05/08/2003WO2002019418A3 Method for achieving copper fill of high aspect ratio interconnect features
05/08/2003US20030088849 Semiconductor integrated circuit device and method for designing the same
05/08/2003US20030088848 2N mask design and method of sequential lateral solidification
05/08/2003US20030088840 Method of designing semiconductor integrated circuit device, method of analyzing power consumption of circuit and apparatus for analyzing power consumption
05/08/2003US20030088839 Method of designing integrated circuit and apparatus for designing integrated circuit
05/08/2003US20030088836 Low power test circuit and a semiconductor integrated circuit with the low power test circuit
05/08/2003US20030088785 ID installable LSI, secret key installation method, LSI test method, and LSI development method
05/08/2003US20030088757 Efficient high performance data operation element for use in a reconfigurable logic environment
05/08/2003US20030088380 Method of detecting an integrated circuit in failure among integrated circuits, apparatus of doing the same, and recording medium storing program for doing the same
05/08/2003US20030088379 Electron beam test system and electron beam test method
05/08/2003US20030088016 Having the general formula (R1SiO3/2)x(HSiO3/2)y where R1 is an alkyl group having 8 to 24 carbon atoms; used to form porous thin films on semiconductor devices.
05/08/2003US20030087751 Ceramic member for semiconductor manufacturing equipment
05/08/2003US20030087597 Manufacturing system, control apparatus and control method therefor, control program, and storage medium
05/08/2003US20030087594 Polishing silicon wafers
05/08/2003US20030087590 Method of planarization
05/08/2003US20030087535 Film coating formation method
05/08/2003US20030087534 Surface modification for barrier to ionic penetration
05/08/2003US20030087533 Liquid crystal-templated conducting organic polymers
05/08/2003US20030087532 Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices
05/08/2003US20030087531 Method for etching silicon carbide
05/08/2003US20030087530 Apparatus and method for reactive atom plasma processing for material deposition
05/08/2003US20030087529 Hard mask removal process
05/08/2003US20030087528 Process for planarizing substrates of semiconductor technology
05/08/2003US20030087527 Method for estimating capacitance of deep trench capacitors
05/08/2003US20030087526 Method of etching a mask layer and a protecting layer for metal contact windows
05/08/2003US20030087525 Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
05/08/2003US20030087524 Cleaning method, method for fabricating semiconductor device and cleaning solution
05/08/2003US20030087523 Quartz masking layer overcoated with chromium; quartz pattern in semiconductor design; dry treatment etching; exposure to ultraviolet radiation; applyin gphotoresist
05/08/2003US20030087522 Method of forming reliable Cu interconnects
05/08/2003US20030087521 Low-resistive tungsten silicide layer strongly adhered to lower layer and semiconductor device using the same
05/08/2003US20030087520 Process for removing an underlying layer and depositing a barrier layer in one reactor
05/08/2003US20030087519 Line configuration for bit lines for contact-connecting at least one memory cell, semiconductor component with a line configuration and method for fabricating a line configuration
05/08/2003US20030087518 Method for preventing photoresist poisoning
05/08/2003US20030087517 A new consolidation method of junction contact etch for below 150 nanometer deep trench-based dram devices
05/08/2003US20030087516 Method and apparatus for producing metal oxide
05/08/2003US20030087515 Method for fabricating semiconductor device
05/08/2003US20030087514 Hard mask damascene process used to form a semiconductor device
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