Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2003
09/25/2003WO2003049176A3 Method for defining a source and a drain and a gap inbetween
09/25/2003WO2003044853A3 Substrate contact in soi and method therefor
09/25/2003WO2003036699A3 Lateral semiconductor-on-insulator structure and corresponding manufacturing methods
09/25/2003WO2003030240A3 Etching method and apparatus
09/25/2003WO2003025984A3 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
09/25/2003WO2003023877A3 Surface modifying layers for organic thin film transistors
09/25/2003WO2003015161A3 Method for fabricating a semiconductor product
09/25/2003WO2003012856A3 Method for hermetically encapsulating a component
09/25/2003WO2003012826A3 Monitoring and controlling perovskite oxide film growth
09/25/2003WO2003010826A3 Method for producing a vertical transistor in a trench
09/25/2003WO2003009318A3 Support with getter-material for microelectronic, microoptoelectronic or micromechanical device
09/25/2003WO2003009317A3 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
09/25/2003WO2003007345A9 Article holders with sensors detecting a type of article held by the holder
09/25/2003WO2003007344A3 Etch pattern definition using a cvd organic layer as an anti-reflection coating and hardmask
09/25/2003WO2003005422A3 Datum plate for use in installations of substrate handling systems
09/25/2003WO2003005416A3 Trench structure for semiconductor devices
09/25/2003WO2002104091A8 Placing device and method for placing objects onto substrates
09/25/2003WO2002097895A3 Transistor, method for producing an integrated circuit and method for producing a metal silicide layer
09/25/2003WO2002093257A3 Microlithographic projection illumination system
09/25/2003WO2002092480A3 Device and method for moving substrates with motion coupling
09/25/2003WO2002086967A3 Method for producing metallic bit line contacts
09/25/2003WO2002086948A3 Transport cassette for semiconductor substrate masks
09/25/2003WO2002065508A3 Dopant precursors and processes
09/25/2003WO2002063256A3 Optoelectronic device with wavelength filtering by cavity coupling
09/25/2003WO2002054115A3 A self-cleaning optic for extreme ultraviolet lithography
09/25/2003WO2002029859A3 Method and apparatus for electrochemical planarization of a workpiece
09/25/2003WO2002002276A3 Projected gimbal point drive
09/25/2003US20030182648 Method, apparatus and program product for automatic placement and routing of integrated circuit
09/25/2003US20030182637 Voltage change reflecting delay calculation method, and voltage change reflecting delay calculation system
09/25/2003US20030182634 Clock tree synthesis for mixed domain clocks
09/25/2003US20030182252 Correlation of end-of-line data mining with process tool data mining
09/25/2003US20030182084 Method for maintaining processor, method of automatically inspecting processor and method of automatically resetting processor, method for self-diagnosing software for driving processor
09/25/2003US20030182073 Method of detecting an integrated circuit in failure among integrated circuits, apparatus of doing the same, and recording medium storing program for doing the same
09/25/2003US20030182012 Semiconductor manufacturing apparatus detecting state of connection between controllers
09/25/2003US20030182008 Method of production control and method of manufacturing electronic apparatus
09/25/2003US20030181750 Causing a Grignard reaction of an organometallic silane compound to form a carbon-bridged silane oligomer, removing by-product, mixing intermediate with solvent, water and a catalyst for hydrolysis and condensation to form polysilicate
09/25/2003US20030181629 Chemically amplified resist and a resist composition
09/25/2003US20030181537 Process for producing dielectric layers by using multifunctional carbosilanes
09/25/2003US20030181345 Tantalum barrier removal solution
09/25/2003US20030181343 Composition and method for removing photoresist materials from electronic components
09/25/2003US20030181342 A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic
09/25/2003US20030181310 Ceramic sintered body and process for producing the same
09/25/2003US20030181151 Carrier head with a vibration reduction feature for a chemical mechanical polishing system
09/25/2003US20030181150 Semiconductor wafer assembly and machining apparatus having chuck tables for holding the same
09/25/2003US20030181142 CMP method for noble metals
09/25/2003US20030181141 Method of polishing semiconductor wafers by using double-sided polisher
09/25/2003US20030181137 Linear polishing sheet with window
09/25/2003US20030181069 Method of forming interlayer insulation film
09/25/2003US20030181068 Methods for forming thin film layers by simultaneous doping and sintering
09/25/2003US20030181067 Method of fabricating semiconductor device having low dielectric constant insulator film
09/25/2003US20030181066 Method to produce a porous oxygen-silicon layer
09/25/2003US20030181065 Low contamination components for semiconductor processing apparatus and methods for making components
09/25/2003US20030181064 Semiconductor substrate structure and a semiconductor device
09/25/2003US20030181063 Method for producing water for use in manufacturing semiconductors
09/25/2003US20030181062 Method for improving a quality of dielectric layer and semiconductor device
09/25/2003US20030181061 Configuration for polishing disk-shaped objects
09/25/2003US20030181060 Manufacturing method of semiconductor device and substrate processing apparatus
09/25/2003US20030181059 Method for fabricating pad oxide layer in semiconductor integrated circuits
09/25/2003US20030181057 Method for roughening semiconductor surface
09/25/2003US20030181055 Method of removing photo-resist and polymer residue
09/25/2003US20030181054 Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser
09/25/2003US20030181053 Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof
09/25/2003US20030181052 Method of forming integrated circuit structures in silicone ladder polymer
09/25/2003US20030181051 Method of fabricating a flash memory cell
09/25/2003US20030181050 Method for planarization of wafers with high selectivities
09/25/2003US20030181049 Method for improving reliability of STI
09/25/2003US20030181048 STI method for semiconductor processes
09/25/2003US20030181047 Collecting process water at paper machine, wherein water from several suction elements provided at wire is led so that essentially unbroken liquid column is maintained in outlet pipes of elements and is made to join common collecting vessel
09/25/2003US20030181046 Inhibiting removal of silicon dioxide during metal layer removal by bonding with organic polymer
09/25/2003US20030181045 Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film
09/25/2003US20030181043 Semiconductor device, manufacturing method thereof, and electric device using the semiconductor device or the manufacturing method
09/25/2003US20030181042 Etching uniformity in wet bench tools
09/25/2003US20030181041 Miniaturization of plastic package by increasing ratio of size of integrated circuit chip to package size
09/25/2003US20030181040 Apparatus and method for electroless deposition of materials on semiconductor substrates
09/25/2003US20030181039 Improved reliability of outer lead bonding (OLB) parts of the semiconductor device; low-elasticity resin layer has a lower elasticity modulus than the resin mold
09/25/2003US20030181037 Method for fabricating thin metal layers from the liquid phase
09/25/2003US20030181036 Compound structure for reduced contact resistance
09/25/2003US20030181035 Selective deposition of abarrier layer on a metal film
09/25/2003US20030181034 Methods for forming vias and trenches with controlled SiC etch rate and selectivity
09/25/2003US20030181033 Masks and method for contact hole exposure
09/25/2003US20030181032 Method of fabricating semiconductor device
09/25/2003US20030181031 Method for manufacturing a semiconductor device
09/25/2003US20030181030 Method of forming an intermetal dielectric layer
09/25/2003US20030181028 Integrated circuit device and method therefor
09/25/2003US20030181027 Method of forming a polysilicon layer
09/25/2003US20030181026 Radiation-enhanced particle beams and related applications
09/25/2003US20030181024 Method for obtaining high quality InGaAsN semiconductor devices
09/25/2003US20030181023 Method of processing silicon single crystal ingot
09/25/2003US20030181022 Method to improve STI nano gap fill and moat nitride pull back
09/25/2003US20030181021 Method for manufacturing semiconductor device
09/25/2003US20030181020 Semiconductor device and process for producing the same
09/25/2003US20030181019 Method for producing a shallow trench isolation for n- and p- channel field-effect transistors in a semiconductor module
09/25/2003US20030181018 Low k interconnect dielectric using surface transformation
09/25/2003US20030181017 Capacitance element and method of manufacturing the same
09/25/2003US20030181016 Method of forming a bottom electrode of a capacitor in a memory device
09/25/2003US20030181015 Method of producing semiconductor device
09/25/2003US20030181014 Method of manufacturing semiconductor device with STI
09/25/2003US20030181013 Method for fabricating read only memory
09/25/2003US20030181012 Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing
09/25/2003US20030181011 Fabrication process of a trench gate power MOS transistor with scaled channel
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